KR102741720B1 - 실리콘 단결정 웨이퍼의 제조방법 및 실리콘 단결정 웨이퍼 - Google Patents

실리콘 단결정 웨이퍼의 제조방법 및 실리콘 단결정 웨이퍼 Download PDF

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KR102741720B1
KR102741720B1 KR1020217032523A KR20217032523A KR102741720B1 KR 102741720 B1 KR102741720 B1 KR 102741720B1 KR 1020217032523 A KR1020217032523 A KR 1020217032523A KR 20217032523 A KR20217032523 A KR 20217032523A KR 102741720 B1 KR102741720 B1 KR 102741720B1
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single crystal
silicon single
layer
crystal wafer
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KR20210151814A (ko
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웨이 펭 쿠
시즈오 이가와
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신에쯔 한도타이 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H01L21/322—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020217032523A 2019-04-16 2020-02-05 실리콘 단결정 웨이퍼의 제조방법 및 실리콘 단결정 웨이퍼 Active KR102741720B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019077651 2019-04-16
JPJP-P-2019-077651 2019-04-16
PCT/JP2020/004397 WO2020213230A1 (ja) 2019-04-16 2020-02-05 シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ

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KR20210151814A KR20210151814A (ko) 2021-12-14
KR102741720B1 true KR102741720B1 (ko) 2024-12-11

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KR1020217032523A Active KR102741720B1 (ko) 2019-04-16 2020-02-05 실리콘 단결정 웨이퍼의 제조방법 및 실리콘 단결정 웨이퍼

Country Status (6)

Country Link
US (1) US11959191B2 (https=)
JP (1) JP7388434B2 (https=)
KR (1) KR102741720B1 (https=)
CN (1) CN113906171B (https=)
TW (1) TWI866953B (https=)
WO (1) WO2020213230A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3929334A1 (de) 2020-06-23 2021-12-29 Siltronic AG Verfahren zur herstellung von halbleiterscheiben
US12412741B2 (en) * 2020-11-18 2025-09-09 Applied Materials, Inc. Silicon oxide gap fill using capacitively coupled plasmas

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101494730B1 (ko) * 2012-08-08 2015-02-23 실트로닉 아게 모노크리스탈 실리콘으로 구성된 반도체 웨이퍼 및 그 생성 방법
JP2016504759A (ja) * 2012-11-19 2016-02-12 サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造

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JP4055343B2 (ja) 2000-09-26 2008-03-05 株式会社Ｓｕｍｃｏ シリコン半導体基板の熱処理方法
JP4106862B2 (ja) * 2000-10-25 2008-06-25 信越半導体株式会社 シリコンウェーハの製造方法
JP4794137B2 (ja) * 2004-04-23 2011-10-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン半導体基板の熱処理方法
US7483424B2 (en) * 2005-07-28 2009-01-27 International Business Machines Corporation Method, for securely maintaining communications network connection data
JP2007194232A (ja) * 2006-01-17 2007-08-02 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの製造方法
JP5167654B2 (ja) 2007-02-26 2013-03-21 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
JP5567259B2 (ja) * 2008-07-28 2014-08-06 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハおよびその製造方法
JP5621791B2 (ja) * 2012-01-11 2014-11-12 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及び電子デバイス
DE102014208815B4 (de) 2014-05-09 2018-06-21 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe aus Silizium
JP6100226B2 (ja) 2014-11-26 2017-03-22 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
JP6245156B2 (ja) 2014-12-02 2017-12-13 信越半導体株式会社 シリコンウェーハの評価方法
JP6044660B2 (ja) * 2015-02-19 2016-12-14 信越半導体株式会社 シリコンウェーハの製造方法
JP2018030765A (ja) 2016-08-25 2018-03-01 信越半導体株式会社 シリコン単結晶ウェーハの製造方法、シリコンエピタキシャルウェーハの製造方法、シリコン単結晶ウェーハ及びシリコンエピタキシャルウェーハ
DE102016225138A1 (de) 2016-12-15 2018-06-21 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium
CN114093764B (zh) * 2016-12-28 2025-07-22 太阳能爱迪生半导体有限公司 单晶硅晶片
JP6897598B2 (ja) 2018-02-16 2021-06-30 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101494730B1 (ko) * 2012-08-08 2015-02-23 실트로닉 아게 모노크리스탈 실리콘으로 구성된 반도체 웨이퍼 및 그 생성 방법
JP2016504759A (ja) * 2012-11-19 2016-02-12 サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造

Also Published As

Publication number Publication date
CN113906171A (zh) 2022-01-07
JPWO2020213230A1 (https=) 2020-10-22
WO2020213230A1 (ja) 2020-10-22
KR20210151814A (ko) 2021-12-14
JP7388434B2 (ja) 2023-11-29
TWI866953B (zh) 2024-12-21
US11959191B2 (en) 2024-04-16
US20220195620A1 (en) 2022-06-23
CN113906171B (zh) 2024-11-29
TW202041726A (zh) 2020-11-16

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