JP7361771B2 - ルテニウム前駆体および還元ガスを用いた化学蒸着プロセス - Google Patents
ルテニウム前駆体および還元ガスを用いた化学蒸着プロセス Download PDFInfo
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- JP7361771B2 JP7361771B2 JP2021524025A JP2021524025A JP7361771B2 JP 7361771 B2 JP7361771 B2 JP 7361771B2 JP 2021524025 A JP2021524025 A JP 2021524025A JP 2021524025 A JP2021524025 A JP 2021524025A JP 7361771 B2 JP7361771 B2 JP 7361771B2
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- Prior art keywords
- ruthenium
- cyclohexadiene
- cymene
- diene
- precursor
- Prior art date
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title claims description 171
- 229910052707 ruthenium Inorganic materials 0.000 title claims description 170
- 239000002243 precursor Substances 0.000 title claims description 120
- 238000000034 method Methods 0.000 title claims description 59
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 45
- 230000008569 process Effects 0.000 title claims description 22
- 238000000151 deposition Methods 0.000 claims description 111
- MGNZXYYWBUKAII-UHFFFAOYSA-N cyclohexa-1,3-diene Chemical group C1CC=CC=C1 MGNZXYYWBUKAII-UHFFFAOYSA-N 0.000 claims description 104
- 239000007789 gas Substances 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 55
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cis-cyclohexene Natural products C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 claims description 46
- HFPZCAJZSCWRBC-UHFFFAOYSA-N p-cymene Chemical compound CC(C)C1=CC=C(C)C=C1 HFPZCAJZSCWRBC-UHFFFAOYSA-N 0.000 claims description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 27
- 229910052760 oxygen Inorganic materials 0.000 claims description 27
- 239000001301 oxygen Substances 0.000 claims description 27
- 239000003446 ligand Substances 0.000 claims description 21
- -1 cyclic diene Chemical group 0.000 claims description 20
- 229930007927 cymene Natural products 0.000 claims description 20
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 125000003118 aryl group Chemical group 0.000 claims description 9
- 125000002897 diene group Chemical group 0.000 claims description 9
- QDXQAOGNBCOEQX-UHFFFAOYSA-N 1-methylcyclohexa-1,4-diene Chemical compound CC1=CCC=CC1 QDXQAOGNBCOEQX-UHFFFAOYSA-N 0.000 claims description 7
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 claims description 6
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 claims description 6
- 150000001993 dienes Chemical class 0.000 claims description 6
- 230000008016 vaporization Effects 0.000 claims description 6
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 5
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 claims description 4
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 claims description 4
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 claims description 4
- AFZZYIJIWUTJFO-UHFFFAOYSA-N 1,3-diethylbenzene Chemical compound CCC1=CC=CC(CC)=C1 AFZZYIJIWUTJFO-UHFFFAOYSA-N 0.000 claims description 4
- DSNHSQKRULAAEI-UHFFFAOYSA-N 1,4-Diethylbenzene Chemical compound CCC1=CC=C(CC)C=C1 DSNHSQKRULAAEI-UHFFFAOYSA-N 0.000 claims description 4
- HYFLWBNQFMXCPA-UHFFFAOYSA-N 1-ethyl-2-methylbenzene Chemical compound CCC1=CC=CC=C1C HYFLWBNQFMXCPA-UHFFFAOYSA-N 0.000 claims description 4
- XCYJPXQACVEIOS-UHFFFAOYSA-N 1-isopropyl-3-methylbenzene Chemical compound CC(C)C1=CC=CC(C)=C1 XCYJPXQACVEIOS-UHFFFAOYSA-N 0.000 claims description 4
- AXIUBBVSOWPLDA-UHFFFAOYSA-N 2-ethyl-p-xylene Chemical compound CCC1=CC(C)=CC=C1C AXIUBBVSOWPLDA-UHFFFAOYSA-N 0.000 claims description 4
- PQNFLJBBNBOBRQ-UHFFFAOYSA-N indane Chemical compound C1=CC=C2CCCC2=C1 PQNFLJBBNBOBRQ-UHFFFAOYSA-N 0.000 claims description 4
- ODLMAHJVESYWTB-UHFFFAOYSA-N propylbenzene Chemical compound CCCC1=CC=CC=C1 ODLMAHJVESYWTB-UHFFFAOYSA-N 0.000 claims description 4
- LDXWTNBYKFXMDV-UHFFFAOYSA-N 3-methylcyclohexa-1,4-diene Chemical compound CC1C=CCC=C1 LDXWTNBYKFXMDV-UHFFFAOYSA-N 0.000 claims description 3
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 claims description 2
- WWRCMNKATXZARA-UHFFFAOYSA-N 1-Isopropyl-2-methylbenzene Chemical compound CC(C)C1=CC=CC=C1C WWRCMNKATXZARA-UHFFFAOYSA-N 0.000 claims description 2
- QMFJIJFIHIDENY-UHFFFAOYSA-N 1-Methyl-1,3-cyclohexadiene Chemical compound CC1=CC=CCC1 QMFJIJFIHIDENY-UHFFFAOYSA-N 0.000 claims description 2
- JRLPEMVDPFPYPJ-UHFFFAOYSA-N 1-ethyl-4-methylbenzene Chemical compound CCC1=CC=C(C)C=C1 JRLPEMVDPFPYPJ-UHFFFAOYSA-N 0.000 claims description 2
- ZLCSFXXPPANWQY-UHFFFAOYSA-N 3-ethyltoluene Chemical compound CCC1=CC=CC(C)=C1 ZLCSFXXPPANWQY-UHFFFAOYSA-N 0.000 claims description 2
- 125000002009 alkene group Chemical group 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- UVJHQYIOXKWHFD-UHFFFAOYSA-N cyclohexa-1,4-diene Chemical compound C1C=CCC=C1 UVJHQYIOXKWHFD-UHFFFAOYSA-N 0.000 claims description 2
- JXFVMNFKABWTHD-UHFFFAOYSA-N 1-methyl-4-propylbenzene Chemical compound CCCC1=CC=C(C)C=C1 JXFVMNFKABWTHD-UHFFFAOYSA-N 0.000 claims 1
- RQILPKDEITWMOW-UHFFFAOYSA-N C1=CC=CCC1.C1(=CC(=CC=C1)C)C Chemical compound C1=CC=CCC1.C1(=CC(=CC=C1)C)C RQILPKDEITWMOW-UHFFFAOYSA-N 0.000 claims 1
- DVGRAMDKBJVYBI-UHFFFAOYSA-N C1=CC=CCC1.C1(=CC=C(C=C1)C)C Chemical compound C1=CC=CCC1.C1(=CC=C(C=C1)C)C DVGRAMDKBJVYBI-UHFFFAOYSA-N 0.000 claims 1
- LILAAWCLXXIIDC-UHFFFAOYSA-N C1=CC=CCC1.C=1(C(=CC=CC1)C)C Chemical compound C1=CC=CCC1.C=1(C(=CC=CC1)C)C LILAAWCLXXIIDC-UHFFFAOYSA-N 0.000 claims 1
- ZJMWRROPUADPEA-UHFFFAOYSA-N sec-butylbenzene Chemical compound CCC(C)C1=CC=CC=C1 ZJMWRROPUADPEA-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 96
- 239000010410 layer Substances 0.000 description 41
- 239000000463 material Substances 0.000 description 41
- 238000005137 deposition process Methods 0.000 description 32
- 239000003989 dielectric material Substances 0.000 description 23
- 239000010949 copper Substances 0.000 description 16
- 229910052739 hydrogen Inorganic materials 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 10
- 239000004020 conductor Substances 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 239000012707 chemical precursor Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000004377 microelectronic Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 150000002430 hydrocarbons Chemical group 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000443 aerosol Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 150000001923 cyclic compounds Chemical class 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- YTZKOQUCBOVLHL-UHFFFAOYSA-N tert-butylbenzene Chemical compound CC(C)(C)C1=CC=CC=C1 YTZKOQUCBOVLHL-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- IKAACYWAXDLDPM-UHFFFAOYSA-N 1,2,3,4,4a,5-hexahydronaphthalene Chemical compound C1=CCC2CCCCC2=C1 IKAACYWAXDLDPM-UHFFFAOYSA-N 0.000 description 1
- WZMQOSYJAAMGTB-UHFFFAOYSA-N 1-ethylcyclohexa-1,3-diene Chemical compound CCC1=CC=CCC1 WZMQOSYJAAMGTB-UHFFFAOYSA-N 0.000 description 1
- LECZYMJJKZZTEP-UHFFFAOYSA-N 1-propylcyclohexa-1,3-diene Chemical compound CCCC1=CC=CCC1 LECZYMJJKZZTEP-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- UFERIGCCDYCZLN-UHFFFAOYSA-N 3a,4,7,7a-tetrahydro-1h-indene Chemical compound C1C=CCC2CC=CC21 UFERIGCCDYCZLN-UHFFFAOYSA-N 0.000 description 1
- ZNKKYYNWFKHNHZ-UHFFFAOYSA-N 5-methylcyclohexa-1,3-diene Chemical compound CC1CC=CC=C1 ZNKKYYNWFKHNHZ-UHFFFAOYSA-N 0.000 description 1
- STXTUACRJBIPBJ-UHFFFAOYSA-N C1=CC=CCC1.C1CCC2=CC=CC=C12 Chemical compound C1=CC=CCC1.C1CCC2=CC=CC=C12 STXTUACRJBIPBJ-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001928 direct liquid injection chemical vapour deposition Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- KXUHSQYYJYAXGZ-UHFFFAOYSA-N isobutylbenzene Chemical compound CC(C)CC1=CC=CC=C1 KXUHSQYYJYAXGZ-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 1
- SJYNFBVQFBRSIB-UHFFFAOYSA-N norbornadiene Chemical compound C1=CC2C=CC1C2 SJYNFBVQFBRSIB-UHFFFAOYSA-N 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000004792 oxidative damage Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- YAYGSLOSTXKUBW-UHFFFAOYSA-N ruthenium(2+) Chemical compound [Ru+2] YAYGSLOSTXKUBW-UHFFFAOYSA-N 0.000 description 1
- BIXNGBXQRRXPLM-UHFFFAOYSA-K ruthenium(3+);trichloride;hydrate Chemical compound O.Cl[Ru](Cl)Cl BIXNGBXQRRXPLM-UHFFFAOYSA-K 0.000 description 1
- PWRYKCFNWWHKLP-UHFFFAOYSA-N ruthenium;hydrate Chemical compound O.[Ru] PWRYKCFNWWHKLP-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 150000005671 trienes Chemical class 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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Description
の化合物を含み、
式中、1つ以上のR3-R8は、HおよびC1-C6アルキルから選択され、R9は、0(共有結合)または1~4個の炭素原子の二価アルケン基であり、R10およびR11は、1つ以上の環構造を形成するか、またはHおよびC1-C6アルキルから選択される。好ましくは、R3-R8の1つ、2つ、または3つは、C1-C6アルキル、またはより好ましくはC1-C3アルキルから選択され、残りのR3-R8はHである。好ましくは、R9は0(共有結合)であり、R10およびR11は1つ以上の環構造を形成する。
H2共反応物を用いたP-シメン(1,3-シクロヘキサジエン)RuのCVD堆積
4μモル/分のP-シメンCHD Ruおよび0.4lpmのH2を使用して、300℃および30TorrでRu金属を堆積させた。
図1Aは、WCN、WN、およびTiNの、SiO2を上回る自己制限的堆積および堆積選択性を示すグラフである。
図1Bは、種々の厚さのWCN、WN、およびTiN上の、Ruのas-dep抵抗率を示すグラフである。
H2およびO2共反応物を用いたP-シメンCHD RuのCVD堆積
P-シメンCHD Ruを400sccmのH2および400sccmのO2と共に使用して、300℃、30TorrでRu金属膜を堆積させた。
図2Aは、H2およびO2共反応物を使用した堆積速度の改善を示すグラフである。
図2Bは、種々の厚さのWCN、WN、TiN、およびSiO2上の、Ruのas-dep抵抗率を示すグラフである。
H2およびO2パルスを伴う、P-Cymene CHD Ruを使用したRu金属膜のCVD堆積
図3Aは、H2および1分または2分のいずれかの期間でパルス化されたO2を使用して改善された堆積速度を示すグラフである。
図3Bは、H2およびパルス化O2を使用した堆積プロセス中のガスの流量を示すグラフである。
Claims (12)
- 化学蒸着プロセスにおいて基板上にルテニウムを堆積させるための方法であって、
還元ガスを導入する工程と、
還元ガスを導入する工程の後、式I:R1R2Ru(0)のルテニウム前駆体[式中、R1はアリール基含有配位子であり、R2はジエン基含有配位子である]を気化させる工程と、
酸素を使用せずに基板を気化ルテニウム前駆体および還元ガスと接触させ、ルテニウム薄層を形成する工程と、
ルテニウム薄層を形成した後、気化ルテニウム前駆体および還元ガスと共に酸素を導入し、ルテニウムをルテニウム薄層上に堆積させる工程と
を含む、
方法。 - R3-R8の1つ、2つ又は3つがC1-C3アルキルから選択され、残りのR3-R8がHである、請求項2に記載の方法。
- R1がベンゼン又はモノ-、ジ-若しくはトリ-アルキルベンゼンである、請求項1に記載の方法。
- R2が環状ジエンである、請求項1に記載の方法。
- R2がコンジュゲートジエンである、請求項1に記載の方法。
- R2がシクロヘキサジエン又はアルキルシクロヘキサジエンである、請求項1に記載の方法。
- ルテニウム前駆体が、(シメン)(1,3-シクロヘキサジエン)Ru(0)、(シメン)(1,4-シクロヘキサジエン)Ru(0)、(シメン)(1-メチルシクロヘキサ-1,3-ジエン)Ru(0)、(シメン)(2-メチルシクロヘキサ-1,3-ジエン)Ru(0)、(シメン)(3-メチルシクロヘキサ-1,3-ジエン)Ru(0)、(シメン)(4-メチルシクロヘキサ-1,3-ジエン)Ru(0)、(シメン)(5-メチルシクロヘキサ-1,3-ジエン)Ru(0)、(シメン)(6-メチルシクロヘキサ-1,3-ジエン)Ru(0)、(シメン)(1-メチルシクロヘキサ-1,4-ジエン)Ru(0)、(シメン)(2-メチルシクロヘキサ-1,4-ジエン)Ru(0)、(シメン)(3-メチルシクロヘキサ-1,4-ジエン)Ru(0)、(シメン)(4-メチルシクロヘキサ-1,4-ジエン)Ru(0)、(シメン)(5-メチルシクロヘキサ-1,4-ジエン)Ru(0)及び(シメン)(6-メチルシクロヘキサ-1,4-ジエン)Ru(0)からなる群から選択される、請求項1に記載の方法。
- ルテニウム前駆体が、(ベンゼン)(1,3-シクロヘキサジエン)Ru(0)、(トルエン)(1,3-シクロヘキサジエン)Ru(0)、(エチルベンゼン)(1,3-シクロヘキサジエン)Ru(0)、(1,2-キシレン)(1,3-シクロヘキサジエン)Ru(0)、(1,3-キシレン)(1,3-シクロヘキサジエン)Ru(0)、(1,4-キシレン)(1,3-シクロヘキサジエン)Ru(0)、(p-シメン)(1,3-シクロヘキサジエン)Ru(0)、(o-シメン)(1,3-シクロヘキサジエン)Ru(0)、(m-シメン)(1,3-シクロヘキサジエン)Ru(0)、(クメン)(1,3-シクロヘキサジエン)Ru(0)、(n-プロピルベンゼン)(1,3-シクロヘキサジエン)Ru(0)、(m-エチルトルエン)(1,3-シクロヘキサジエン)Ru(0)、(p-エチルトルエン)(1,3-シクロヘキサジエン)Ru(0)、(o-エチルトルエン)(1,3-シクロヘキサジエン)Ru(0)、(1,3,5-トリメチルベンゼン)(1,3-シクロヘキサジエン)Ru(0)、(1,2,3-トリメチルベンゼン)(1,3-シクロヘキサジエン)Ru(0)、(tert-ブチルベンゼン)(1,3-シクロヘキサジエン)Ru(0)、(イソブチルベンゼン)(1,3-シクロヘキサジエン)Ru(0)、(sec-ブチルベンゼン)(1,3-シクロヘキサジエン)Ru(0)、(インダン)(1,3-シクロヘキサジエン)Ru(0)、(1,2-ジエチルベンゼン)(1,3-シクロヘキサジエン)Ru(0)、(1,3-ジエチルベンゼン)(1,3-シクロヘキサジエン)Ru(0)、(1,4-ジエチルベンゼン)(1,3-シクロヘキサジエン)Ru(0)、(1-メチル-4-プロピルベンゼン)(1,3-シクロヘキサジエン)Ru(0)及び(1,4-ジメチル-2-エチルベンゼン)(1,3-シクロヘキサジエン)Ru(0)からなる群から選択される、請求項1に記載の方法。
- ルテニウムを基板上に堆積させるためのシステムであって、
式R1R2Ru(0)のルテニウム前駆体[式中、R1はアリール基含有配位子であり、R2はジエン基含有配位子である]と、
還元ガスを含む第1のガス供給源と、
酸素を含む第2のガス供給源と
を含み、請求項1に記載の方法を使用する、システム。 - ルテニウム薄層は、厚さが0.5nm~2nmの範囲である、請求項1に記載の方法。
- 基板をルテニウム前駆体および還元ガスと接触させる工程の間、テニウム前駆体及び還元ガスが、1μmol:1L~100μmol:1Lの範囲の量の組み合わせで存在する、請求項1に記載の方法。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008004786A (ja) | 2006-06-23 | 2008-01-10 | Matsushita Electric Ind Co Ltd | 熱伝導基板の製造方法及びこれによって製造した熱伝導基板 |
JP2009046440A (ja) | 2007-08-22 | 2009-03-05 | Tosoh Corp | ルテニウム化合物、その製造方法、ルテニウム含有薄膜及びその製造方法 |
WO2018061965A1 (ja) | 2016-09-29 | 2018-04-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
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US6440495B1 (en) * | 2000-08-03 | 2002-08-27 | Applied Materials, Inc. | Chemical vapor deposition of ruthenium films for metal electrode applications |
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US7107998B2 (en) * | 2003-10-16 | 2006-09-19 | Novellus Systems, Inc. | Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus |
US7074719B2 (en) * | 2003-11-28 | 2006-07-11 | International Business Machines Corporation | ALD deposition of ruthenium |
US7285308B2 (en) * | 2004-02-23 | 2007-10-23 | Advanced Technology Materials, Inc. | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium |
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US7270848B2 (en) * | 2004-11-23 | 2007-09-18 | Tokyo Electron Limited | Method for increasing deposition rates of metal layers from metal-carbonyl precursors |
US7438949B2 (en) * | 2005-01-27 | 2008-10-21 | Applied Materials, Inc. | Ruthenium containing layer deposition method |
US7273814B2 (en) * | 2005-03-16 | 2007-09-25 | Tokyo Electron Limited | Method for forming a ruthenium metal layer on a patterned substrate |
US7402517B2 (en) * | 2005-03-31 | 2008-07-22 | Battelle Memorial Institute | Method and apparatus for selective deposition of materials to surfaces and substrates |
CN103408598A (zh) * | 2006-07-27 | 2013-11-27 | 宇部兴产株式会社 | 有机钌络合物以及使用该钌络合物的钌薄膜的制造方法 |
US7435484B2 (en) | 2006-09-01 | 2008-10-14 | Asm Japan K.K. | Ruthenium thin film-formed structure |
JP5032085B2 (ja) * | 2006-10-06 | 2012-09-26 | 田中貴金属工業株式会社 | 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法 |
US20080152793A1 (en) * | 2006-12-22 | 2008-06-26 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitaion Des Procedes Georges Claude | Method for the deposition of a ruthenium containing film with aryl and diene containing complexes |
WO2008088563A2 (en) * | 2007-01-17 | 2008-07-24 | Advanced Technology Materials, Inc. | Precursor compositions for ald/cvd of group ii ruthenate thin films |
KR100958332B1 (ko) * | 2008-01-28 | 2010-05-18 | (주)디엔에프 | 신규 루테늄 화합물 및 이를 이용한 박막 증착 방법 |
EP2264000B1 (en) * | 2008-04-07 | 2016-05-11 | Nippon Soda Co., Ltd. | Method for producing optically active aminoalcohol compound using ruthenium compound |
US8124528B2 (en) * | 2008-04-10 | 2012-02-28 | Micron Technology, Inc. | Method for forming a ruthenium film |
US20110045171A1 (en) * | 2009-08-19 | 2011-02-24 | International Business Machines Corporation | Multi-Step Method to Selectively Deposit Ruthenium Layers of Arbitrary Thickness on Copper |
DE102009053392A1 (de) * | 2009-11-14 | 2011-06-22 | Umicore AG & Co. KG, 63457 | Verfahren zur Herstellung von Ru(0) Olefin-Komplexen |
JP2011106008A (ja) * | 2009-11-20 | 2011-06-02 | Adeka Corp | 化学気相成長用原料及びルテニウム化合物 |
US8357614B2 (en) * | 2010-04-19 | 2013-01-22 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Ruthenium-containing precursors for CVD and ALD |
JP2012111696A (ja) * | 2010-11-22 | 2012-06-14 | Tosoh Corp | ルテニウム錯体混合物、成膜用組成物、ルテニウム含有膜及びその製造方法 |
WO2013117955A1 (en) * | 2012-02-07 | 2013-08-15 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method for the deposition of a ruthenium containing film using arene diazadiene ruthenium(0) precursors |
JP5992764B2 (ja) * | 2012-08-20 | 2016-09-14 | 田中貴金属工業株式会社 | ルテニウム錯体からなる化学蒸着原料及びその製造方法並びに化学蒸着方法 |
US20140134351A1 (en) * | 2012-11-09 | 2014-05-15 | Applied Materials, Inc. | Method to deposit cvd ruthenium |
US10047435B2 (en) * | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
US10741572B2 (en) * | 2015-02-04 | 2020-08-11 | Sandisk Technologies Llc | Three-dimensional memory device having multilayer word lines containing selectively grown cobalt or ruthenium and method of making the same |
US10002834B2 (en) * | 2015-03-11 | 2018-06-19 | Applied Materials, Inc. | Method and apparatus for protecting metal interconnect from halogen based precursors |
JP6308229B2 (ja) * | 2016-02-23 | 2018-04-11 | マツダ株式会社 | エンジンのオイル供給制御装置 |
TWI758363B (zh) * | 2016-12-06 | 2022-03-21 | 美商應用材料股份有限公司 | 用於ald及cvd薄膜沉積之釕前驅物及其用法 |
KR101932588B1 (ko) * | 2017-02-28 | 2018-12-27 | 한국과학기술연구원 | 반도체 메모리 소자의 커패시터 및 그 제조 방법 |
TWI790320B (zh) * | 2017-12-16 | 2023-01-21 | 美商應用材料股份有限公司 | 釕的選擇性原子層沉積 |
US20190309422A1 (en) * | 2018-04-06 | 2019-10-10 | Versum Materials Us, Llc | Spin-On Metallization |
US11371138B2 (en) * | 2018-11-08 | 2022-06-28 | Entegris, Inc. | Chemical vapor deposition processes using ruthenium precursor and reducing gas |
CN113039309A (zh) * | 2018-11-15 | 2021-06-25 | 恩特格里斯公司 | 使用钌前驱物的等离子体增强原子层沉积(peald)方法 |
-
2019
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008004786A (ja) | 2006-06-23 | 2008-01-10 | Matsushita Electric Ind Co Ltd | 熱伝導基板の製造方法及びこれによって製造した熱伝導基板 |
JP2009046440A (ja) | 2007-08-22 | 2009-03-05 | Tosoh Corp | ルテニウム化合物、その製造方法、ルテニウム含有薄膜及びその製造方法 |
WO2018061965A1 (ja) | 2016-09-29 | 2018-04-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
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