JP7282138B2 - 表示装置 - Google Patents
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- JP7282138B2 JP7282138B2 JP2021165398A JP2021165398A JP7282138B2 JP 7282138 B2 JP7282138 B2 JP 7282138B2 JP 2021165398 A JP2021165398 A JP 2021165398A JP 2021165398 A JP2021165398 A JP 2021165398A JP 7282138 B2 JP7282138 B2 JP 7282138B2
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/58—Optical field-shaping elements
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Description
、配線部は画素100と電気的に接続されるようにプリント回路基板の上面に提供されたパッド部235a、235bと、プリント回路基板の上下面を貫通する接続部235ba、235bbを含むことができる。プリント回路基板の下面には電極231、232又は配線等が実装されることができ、画素100の配線はパッド部235a、235b及び接続部235ba、235bb等を通じてプリント回路基板の下面の電極231、232及び配線等に接続される。
5a、235bに実装される。この時、上述したように発光セル111P、113P、115Pとパッド部235a、235bとの間には安定的な電気的接続を担保するために導電性接着層が提供されてもよい。導電性接着層はソルダペースト、銀ペースト等の導電性ペーストや導電性樹脂で構成されてもよい。
ルター252は蛍光体層251によって完全に変換されない青色光や紫外線光を遮断することができる。また、隣接する第1及び第3発光セル111P、115Pからの光を遮断することによって第2発光セル113Pから出射される光の混色を防止する。したがって、本発明の一実施形態によれば、波長変換器250に蛍光体層251及びカラーフィルター252が提供されることによって、色純度をより向上させることができる。
Claims (22)
- 基板と、
前記基板上に配置され、それぞれ赤色光、緑色光および青色光を放出するように構成された第1サブ画素、第2サブ画素及び第3サブ画素と、
前記第1サブ画素、前記第2サブ画素及び前記第3サブ画素の間に配置され、光を透過しないように構成された隔壁と、
前記隔壁の上面及び側面を覆う保護層と、
前記隔壁の上に前記保護層を介して前記隔壁と離隔して配置された遮光部と、
を含み、
前記第1サブ画素、前記第2サブ画素及び前記第3サブ画素は、それぞれ第1発光セル、第2発光セル及び第3発光セルで構成され、
前記第1発光セル、前記第2発光セル及び前記第3発光セルそれぞれの高さは、前記隔壁の高さよりも低く、前記隔壁の高さと前記第1発光セル、前記第2発光セル及び前記第3発光セルそれぞれの高さとの差が100μm以下である、表示装置。 - 前記基板は、配線部を含むプリント回路基板である、請求項1に記載の表示装置。
- 前記基板は、ガラス、石英又はこれらの組み合わせのうちの少なくとも1つを含む、請求項2に記載の表示装置。
- 前記第1発光セル、前記第2発光セル及び前記第3発光セルは、フリップチップである、請求項1に記載の表示装置。
- 前記第1サブ画素、前記第2サブ画素及び前記第3サブ画素のうち少なくとも1つは、前記第1発光セル、前記第2発光セル及び前記第3発光セルのうち少なくとも1つの上に配置された波長変換器をさらに含み、
前記波長変換器は、入射する光の波長を変換するように構成される、請求項1に記載の表示装置。 - 前記第1発光セル、前記第2発光セル及び前記第3発光セルの光出射面のそれぞれには、凹凸が設けられている、請求項1に記載の表示装置。
- 前記基板上に配置された電極と、
前記第1発光セル、前記第2発光セル及び前記第3発光セルと前記電極とを電気的に接続する接続部と、をさらに含み、
前記第1発光セル、前記第2発光セル及び前記第3発光セルは、前記基板の表面に配置され、前記電極は、前記基板の裏面に配置され、前記接続部は、前記基板を貫通する、請求項1に記載の表示装置。 - 前記第1発光セル、前記第2発光セル及び前記第3発光セルの間に配置された前記隔壁は、互いに一体的に接続されている、請求項1に記載の表示装置。
- 前記隔壁それぞれの幅は、前記隔壁それぞれが前記基板から離れるにつれて大きくなる、請求項1に記載の表示装置。
- 前記基板の平面上の面積に占める前記隔壁の面積の割合は0.5以上0.99以下である、請求項1に記載の表示装置。
- 前記隔壁の高さは、15μm以上115μm以下である、請求項1に記載の表示装置。
- 前記第1発光セルは、赤色に発光し、前記第2発光セルは、緑色に発光し、前記第3発光セルは、青色に発光し、
前記第1発光セルと前記第2発光セルとの間の距離は、前記第1発光セルと前記第3発光セルとの間の距離と同じである、請求項1に記載の表示装置。 - 前記第1発光セルは、赤色に発光し、前記第2発光セルは、緑色に発光し、前記第3発光セルは、青色に発光し、
前記第1発光セルと前記第2発光セルとの間の距離は、前記第1発光セルと前記第3発光セルとの間の距離と異なる、請求項1に記載の表示装置。 - 前記第1発光セル、前記第2発光セル及び前記第3発光セルは、各画素に設けられており、
第1画素における前記第1発光セルと前記第2発光セルとの間の距離、前記第2発光セルと前記第3発光セルとの間の距離、及び前記第1発光セルと前記第3発光セルとの間の距離は、前記第1画素における前記第1発光セル、前記第2発光セル及び前記第3発光セルのいずれか1つと、第1画素に隣接する第2画素における発光セルのいずれか1つとの間の距離よりも短い、請求項13に記載の表示装置。 - 前記第1発光セル、前記第2発光セル及び前記第3発光セルは、三角形状に配置されている、請求項1に記載の表示装置。
- 前記第1発光セル、前記第2発光セル及び前記第3発光セルは、直線状に配置されていることを特徴とする請求項1に記載の表示装置。
- 前記第1発光セル、前記第2発光セル及び前記第3発光セルに接続されたスキャン配線およびデータ配線をさらに含み、
前記第1発光セル、前記第2発光セル及び前記第3発光セルは、前記スキャン配線から走査信号が供給されると、前記データ配線から入力されたデータ信号に対応する光を発する、請求項1に記載の表示装置。 - 前記第1発光セル、前記第2発光セル及び前記第3発光セルの上に配置された光拡散板をさらに含む、請求項1に記載の表示装置。
- 前記遮光部は、前記隔壁と前記光拡散板との間に配置される、請求項18に記載の表示装置。
- 前記光拡散板は、透明ポリマーを含み、
前記第1発光セル、前記第2発光セル及び前記第3発光セルから発せられた光を屈折させて、視野角を増大させる、請求項18に記載の表示装置。 - 前記隔壁並びに前記第1発光セル、前記第2発光セル及び前記第3発光セルの上に配置されたウインドー層をさらに含む、請求項1に記載の表示装置。
- 前記ウインドー層は、前記隔壁と前記第1発光セル、前記第2発光セル及び前記第3発光セルを支持する、請求項21に記載の表示装置。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20170127133 | 2017-09-29 | ||
KR10-2017-0127133 | 2017-09-29 | ||
KR10-2017-0157669 | 2017-11-23 | ||
KR20170157669 | 2017-11-23 | ||
KR10-2018-0113679 | 2018-09-21 | ||
KR1020180113679A KR102650950B1 (ko) | 2017-09-29 | 2018-09-21 | 발광 소자 및 그것을 갖는 표시 장치 |
JP2020515261A JP7389021B2 (ja) | 2017-09-29 | 2018-09-27 | 発光素子及びそれを有する表示装置 |
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JP2020515261A Division JP7389021B2 (ja) | 2017-09-29 | 2018-09-27 | 発光素子及びそれを有する表示装置 |
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JP2022003413A JP2022003413A (ja) | 2022-01-11 |
JP7282138B2 true JP7282138B2 (ja) | 2023-05-26 |
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JP2021165398A Active JP7282138B2 (ja) | 2017-09-29 | 2021-10-07 | 表示装置 |
JP2023194352A Pending JP2024014952A (ja) | 2017-09-29 | 2023-11-15 | 発光素子及びそれを有する表示装置 |
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US (3) | US11641008B2 (ja) |
EP (1) | EP3690944A4 (ja) |
JP (3) | JP7389021B2 (ja) |
KR (1) | KR102650950B1 (ja) |
CN (2) | CN110720144A (ja) |
BR (1) | BR112020005890A2 (ja) |
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US11916096B2 (en) | 2017-02-09 | 2024-02-27 | Vuereal Inc. | Circuit and system integration onto a micro-device substrate |
EP3614183B1 (en) * | 2017-04-20 | 2022-09-14 | LG Chem, Ltd. | Anti-reflection optical filter and organic light-emitting device |
FR3068173B1 (fr) * | 2017-06-27 | 2020-05-15 | Aledia | Dispositif optoelectronique |
WO2019093533A1 (ko) * | 2017-11-08 | 2019-05-16 | 서울바이오시스주식회사 | 복수의 픽셀들을 포함하는 디스플레이용 발광 다이오드 유닛 및 그것을 갖는 디스플레이 장치 |
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KR102551354B1 (ko) * | 2018-04-20 | 2023-07-04 | 삼성전자 주식회사 | 반도체 발광 소자 및 그 제조 방법 |
CN108701230B (zh) * | 2018-05-17 | 2023-03-17 | 京东方科技集团股份有限公司 | 生物识别传感器、显示设备、制造生物识别传感器的方法 |
CN108847135B (zh) * | 2018-06-13 | 2021-04-23 | 云谷(固安)科技有限公司 | 一种可拉伸的柔性显示面板及其制备方法 |
KR102590433B1 (ko) * | 2018-09-07 | 2023-10-18 | 삼성전자주식회사 | 디스플레이 모듈, 이를 포함하는 디스플레이 장치 및 디스플레이 모듈 제조 방법 |
KR102655757B1 (ko) * | 2018-11-23 | 2024-04-11 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
DE102018132542A1 (de) * | 2018-12-17 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Optoelektronische leuchtvorrichtung und herstellungsverfahren |
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US11641008B2 (en) | 2023-05-02 |
US11824145B2 (en) | 2023-11-21 |
US20200279979A1 (en) | 2020-09-03 |
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