JP7269755B2 - 電子装置および電子装置の製造方法 - Google Patents
電子装置および電子装置の製造方法 Download PDFInfo
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- JP7269755B2 JP7269755B2 JP2019032444A JP2019032444A JP7269755B2 JP 7269755 B2 JP7269755 B2 JP 7269755B2 JP 2019032444 A JP2019032444 A JP 2019032444A JP 2019032444 A JP2019032444 A JP 2019032444A JP 7269755 B2 JP7269755 B2 JP 7269755B2
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Description
図1~図4は、第1実施形態にかかる電子装置を示している。第1実施形態の電子装置A1は、電子部品11、封止樹脂20、内部電極30、複数の外部電極40、複数の接合部51および枠状導電体61を備えている。本実施形態において、内部電極30は、複数の柱状導電体31および複数の配線層32を含んでいる。
図18~図21は、第2実施形態にかかる電子装置を示している。第2実施形態の電子装置A2は、電子装置A1と比較して、主に、電子部品11と異なる電子部品12を備えている点で異なる。
図31は、第3実施形態にかかる電子装置を示している。第3実施形態の電子装置A3は、電子装置A2と比較して、主に、素子主面121が第1樹脂層21から露出している点で異なる。
[付記1]
第1方向において互いに反対側を向く第1樹脂層主面および第1樹脂層裏面を有する第1樹脂層と、
前記第1方向において互いに反対側を向く第1導電体主面および第1導電体裏面を有し、前記第1樹脂層を前記第1方向に貫通する第1導電体と、
前記第1樹脂層主面と前記第1導電体主面とに跨る第1配線層と、
前記第1方向において前記第1樹脂層主面と同じ側を向く第1素子主面および前記第1樹脂層裏面と同じ側を向く第1素子裏面を有し、前記第1配線層に導通接合された第1電子部品と、
前記第1樹脂層主面と同じ方向を向く第2樹脂層主面および前記第1樹脂層主面に接する第2樹脂層裏面を有し、前記第1配線層および前記第1電子部品を覆う第2樹脂層と、
前記第1樹脂層よりも前記第1樹脂層裏面が向く方向側に配置され、前記第1導電体に導通する外部電極と、を備えることを特徴とする電子装置。
[付記2]
前記第1樹脂層主面には、研削痕が形成されている、付記1に記載の電子装置。
[付記3]
前記第1導電体主面は、前記第1樹脂層主面に対して、窪んでいる、付記2に記載の電子装置。
[付記4]
前記第1方向において互いに反対側を向く第2配線層主面および第2配線層裏面を有する第2配線層をさらに備えており、
前記第2配線層裏面は、前記第1樹脂層裏面から露出している、付記1ないし付記3のいずれかに記載の電子装置。
[付記5]
前記第1電子部品と異なる第2電子部品をさらに備えており、
前記第2電子部品は、前記第2配線層に導通接合され、少なくとも一部が前記第1樹脂層に覆われている、付記4に記載の電子装置。
[付記6]
前記第2電子部品は、前記第1素子主面と同じ方向を向く第2素子主面を有しており、
前記第2素子主面は、前記第1樹脂層主面と面一である、付記5に記載の電子装置。
[付記7]
前記外部電極は、前記第1導電体裏面を覆う第1導電体被覆部を含んでいる、
付記1ないし付記6のいずれかに記載の電子装置。
[付記8]
前記外部電極は、前記第2配線層裏面の一部を覆う第2配線層被覆部を含んでいる、付記4ないし付記6のいずれかに記載の電子装置。
[付記9]
前記第2配線層裏面のうち前記外部電極から露出する部分を覆う保護膜をさらに備えている、付記8に記載の電子装置。
[付記10]
前記第1導電体裏面は、前記第2配線層主面に接している、付記8または付記9に記載の電子装置。
[付記11]
前記第1電子部品と前記第1配線層とを接合する導電性接合層をさらに備えており、
前記第1配線層は、前記第1方向に見て、一部が前記第1電子部品に重なり、
前記導電性接合層は、前記第1素子裏面と前記第1配線層との間に介在する、付記1ないし付記10のいずれかに記載の電子装置。
[付記12]
前記第2樹脂層を前記第1方向に貫通する第2導電体をさらに備えており、
前記第2導電体は、前記第1方向に見て、前記第1電子部品の周囲に配置されている、付記1ないし付記11のいずれかに記載の電子装置。
[付記13]
前記第2導電体は、前記第1方向に見て、前記第1配線層から離間している、付記12に記載の電子装置。
[付記14]
前記第2導電体は、前記第1方向に見て、前記第1電子部品を包囲している、付記13に記載の電子装置。
[付記15]
前記第2導電体は、前記第1方向において前記第2樹脂層主面と同じ方向を向く第2導電体主面を有しており、
前記第2導電体主面は、前記第2樹脂層主面から露出している、付記12ないし付記14のいずれかに記載の電子装置。
[付記16]
前記第1方向に見て、前記第1電子部品に重なり、かつ、前記第2樹脂層主面の上に形成された金属膜をさらに備えている、付記15に記載の電子装置。
[付記17]
前記金属膜は、前記第2導電体主面に接する、付記16に記載の電子装置。
[付記18]
前記第2導電体主面は、前記第2樹脂層主面に対して、窪んでいる、付記15ないし付記17のいずれかに記載の電子装置。
[付記19]
前記第1電子部品は、半導体を材料とする半導体素子である、付記1ないし付記18のいずれかに記載の電子装置。
[付記20]
第1方向において互いに反対側を向く基板主面および基板裏面を有する支持基板を用意する支持基板用意工程と、
前記基板主面の上に、第1導電体を形成する第1導電体形成工程と、
前記第1導電体を覆う第1樹脂層を形成する第1樹脂層形成工程と、
前記第1方向において前記基板主面が向く側から前記基板裏面が向く側に前記第1樹脂層を研削し、前記第1導電体の一部を前記第1樹脂層から露出させることで、各々が前記第1方向において前記基板主面と同じ側を向く第1導電体主面および第1樹脂層主面を形成する第1樹脂層研削工程と、
前記第1樹脂層主面と前記第1導電体主面とに跨る第1配線層を形成する第1配線層形成工程と、
前記第1配線層の上に、第1電子部品を導通接合する第1電子部品搭載工程と、
前記第1配線層および前記第1電子部品を覆う第2樹脂層を形成する第2樹脂層形成工程と、
前記支持基板を除去することで、前記第1方向において前記第1樹脂層主面と反対側を向く第1樹脂層裏面を露出させる支持基板除去工程と、
前記第1樹脂層よりも前記第1樹脂層裏面が向く方向側に配置され、前記第1導電体に導通する外部電極を形成する外部電極形成工程と、を有することを特徴とする電子装置の製造方法。
[付記21]
前記支持基板用意工程の後であり、前記第1導電体形成工程の前に、前記基板主面の一部を覆う第2配線層を形成する第2配線層形成工程をさらに有しており、
前記第1導電体形成工程では、前記第2配線層の上に、前記第1導電体を形成する、付記20に記載の電子装置の製造方法。
[付記22]
前記第2配線層の上に、第2電子部品を導通接合する第2電子部品搭載工程をさらに有する、付記21に記載の電子装置の製造方法。
[付記23]
前記第1樹脂層研削工程の後であって、前記第2樹脂層形成工程の前に、前記第1樹脂層の一部の上に、第2導電体を形成する第2導電体形成工程をさらに有している、
付記20ないし付記22のいずれかに記載の電子装置の製造方法。
11,12,811,812:電子部品
111,121,811a,812a:素子主面
112,122,811b,812b:素子裏面
13 :電極パッド
131 :第1層
132 :第2層
20 :封止樹脂
21,821:第1樹脂層
211,821a:第1樹脂層主面
212,821b:第1樹脂層裏面
213 :第1樹脂層側面
22,822:第2樹脂層
221,822a:第2樹脂層主面
222 :第2樹脂層裏面
223 :第2樹脂層側面
30 :内部電極
31,831:柱状導電体
311,831a:柱状導電体主面
312,831b:柱状導電体裏面
313 :柱状導電体側面
32,832:配線層
321 :配線層主面
321a :凹部
322 :配線層裏面
33,833:配線層
331 :配線層主面
332,833b:配線層裏面
40,840:外部電極
41 :柱状導電体被覆部
42 :配線層被覆部
51,52,53,851,852:接合部
511,521,851a,852a:絶縁層
512,522,851b,852b:接合層
512a,522a:第1層
512b,522b:第2層
512c,522c:第3層
512d :第4層
61,861:枠状導電体
611 :内面
612 :外面
613,861c:頂面
62 :金属膜
71,871:外部保護膜
871a :開口部
72 :素子保護膜
800 :支持基板
801 :支持基板主面
802 :支持基板裏面
890a,891a:下地層
890b,890c,891b,891c:めっき層
Claims (27)
- 第1方向において互いに反対側を向く第1樹脂層主面および第1樹脂層裏面を有する第1樹脂層と、
前記第1方向において互いに反対側を向く第1導電体主面および第1導電体裏面を有し、前記第1樹脂層を前記第1方向に貫通する第1導電体と、
前記第1樹脂層主面と前記第1導電体主面とに跨る第1配線層と、
前記第1方向において前記第1樹脂層主面と同じ側を向く第1素子主面および前記第1樹脂層裏面と同じ側を向く第1素子裏面を有し、前記第1配線層に導通接合された第1電子部品と、
前記第1樹脂層主面と同じ方向を向く第2樹脂層主面および前記第1樹脂層主面に接する第2樹脂層裏面を有し、前記第1配線層および前記第1電子部品を覆う第2樹脂層と、
前記第1樹脂層よりも前記第1樹脂層裏面が向く方向側に配置され、前記第1導電体に導通する外部電極と、
を備えており、
前記第1導電体主面は、前記第1樹脂層主面に対して窪んでおり、
前記第1配線層は、前記第1方向において前記第1導電体主面と同じ方向を向く第1配線層主面と、前記第1配線層主面から前記第1方向に窪む凹部とを有し、
前記凹部は、前記第1方向に見て、前記第1導電体に重なる、
ことを特徴とする電子装置。 - 前記第1樹脂層主面には、研削痕が形成されている、
請求項1に記載の電子装置。 - 前記第1方向において互いに反対側を向く第2配線層主面および第2配線層裏面を有する第2配線層をさらに備えており、
前記第2配線層裏面は、前記第1樹脂層裏面から露出している、
請求項1または請求項2に記載の電子装置。 - 前記第1電子部品と異なる第2電子部品をさらに備えており、
前記第2電子部品は、前記第2配線層に導通接合され、少なくとも一部が前記第1樹脂層に覆われている、
請求項3に記載の電子装置。 - 前記第2電子部品は、前記第1素子主面と同じ方向を向く第2素子主面を有しており、
前記第2素子主面は、前記第1樹脂層主面と面一である、
請求項4に記載の電子装置。 - 前記外部電極は、前記第1導電体裏面を覆う第1導電体被覆部を含んでいる、
請求項1ないし請求項5のいずれか一項に記載の電子装置。 - 前記外部電極は、前記第2配線層裏面の一部を覆う第2配線層被覆部を含んでいる、
請求項3ないし請求項5のいずれか一項に記載の電子装置。 - 前記第2配線層裏面のうち前記外部電極から露出する部分を覆う保護膜をさらに備えている、
請求項7に記載の電子装置。 - 前記第1導電体裏面は、前記第2配線層主面に接している、
請求項7または請求項8に記載の電子装置。 - 前記第1電子部品と前記第1配線層とを接合する導電性接合層をさらに備えており、
前記第1配線層は、前記第1方向に見て、一部が前記第1電子部品に重なり、
前記導電性接合層は、前記第1素子裏面と前記第1配線層との間に介在する、
請求項1ないし請求項9のいずれか一項に記載の電子装置。 - 前記第1方向に見て前記導電性接合層を囲む絶縁層をさらに備える、
請求項10に記載の電子装置。 - 前記第2樹脂層を前記第1方向に貫通する第2導電体をさらに備えており、
前記第2導電体は、前記第1方向に見て、前記第1電子部品の周囲に配置されている、請求項1ないし請求項11のいずれか一項に記載の電子装置。 - 前記第2導電体は、前記第1方向に見て、前記第1配線層から離間している、
請求項12に記載の電子装置。 - 前記第2導電体は、前記第1方向に見て、前記第1電子部品を包囲している、
請求項13に記載の電子装置。 - 前記第2導電体は、前記第1方向において前記第2樹脂層主面と同じ方向を向く第2導電体主面を有しており、
前記第2導電体主面は、前記第2樹脂層主面から露出している、
請求項12ないし請求項14のいずれか一項に記載の電子装置。 - 前記第1方向に見て、前記第1電子部品に重なり、かつ、前記第2樹脂層主面の上に形成された金属膜をさらに備えている、
請求項15に記載の電子装置。 - 前記金属膜は、前記第2導電体主面に接する、
請求項16に記載の電子装置。 - 前記第2導電体主面は、前記第2樹脂層主面に対して、窪んでいる、
請求項15ないし請求項17のいずれか一項に記載の電子装置。 - 前記第2導電体は、前記第1樹脂層主面に接する、
請求項12ないし請求項18のいずれか一項に記載の電子装置。 - 前記第1電子部品は、半導体を材料とする半導体素子である、
請求項1ないし請求項19のいずれか一項に記載の電子装置。 - 第1方向において互いに反対側を向く第1樹脂層主面および第1樹脂層裏面を有する第1樹脂層と、
前記第1方向において互いに反対側を向く第1導電体主面および第1導電体裏面を有し、前記第1樹脂層を前記第1方向に貫通する第1導電体と、
前記第1樹脂層主面と前記第1導電体主面とに跨る第1配線層と、
前記第1方向において前記第1樹脂層主面と同じ側を向く第1素子主面および前記第1樹脂層裏面と同じ側を向く第1素子裏面を有し、前記第1配線層に導通接合された第1電子部品と、
前記第1樹脂層主面と同じ方向を向く第2樹脂層主面および前記第1樹脂層主面に接する第2樹脂層裏面を有し、前記第1配線層および前記第1電子部品を覆う第2樹脂層と、
前記第1樹脂層よりも前記第1樹脂層裏面が向く方向側に配置され、前記第1導電体に導通する外部電極と、
前記第1方向において互いに反対側を向く第2配線層主面および第2配線層裏面を有する第2配線層と、
前記第1素子主面と同じ方向を向く第2素子主面を有する第2電子部品と、
を備えており、
前記第2配線層裏面は、前記第1樹脂層裏面から露出しており、
前記第2電子部品は、前記第2配線層に導通接合され、少なくとも一部が前記第1樹脂層に覆われており、
前記第2素子主面は、前記第1樹脂層主面と面一である、
ことを特徴とする電子装置。 - 第1方向において互いに反対側を向く第1樹脂層主面および第1樹脂層裏面を有する第1樹脂層と、
前記第1方向において互いに反対側を向く第1導電体主面および第1導電体裏面を有し、前記第1樹脂層を前記第1方向に貫通する第1導電体と、
前記第1樹脂層主面と前記第1導電体主面とに跨る第1配線層と、
前記第1方向において前記第1樹脂層主面と同じ側を向く第1素子主面および前記第1樹脂層裏面と同じ側を向く第1素子裏面を有し、前記第1配線層に導通接合された第1電子部品と、
前記第1樹脂層主面と同じ方向を向く第2樹脂層主面および前記第1樹脂層主面に接する第2樹脂層裏面を有し、前記第1配線層および前記第1電子部品を覆う第2樹脂層と、
前記第1樹脂層よりも前記第1樹脂層裏面が向く方向側に配置され、前記第1導電体に導通する外部電極と、
前記第1方向において互いに反対側を向く第2配線層主面および第2配線層裏面を有する第2配線層と、
を備えており、
前記第2配線層裏面は、前記第1樹脂層裏面から露出しており、
前記外部電極は、前記第2配線層裏面の一部を覆う第2配線層被覆部を含んでいる、
ことを特徴とする電子装置。 - 第1方向において互いに反対側を向く基板主面および基板裏面を有する支持基板を用意する支持基板用意工程と、
前記基板主面の上に、第1導電体を形成する第1導電体形成工程と、
前記第1導電体を覆う第1樹脂層を形成する第1樹脂層形成工程と、
前記第1方向において前記基板主面が向く側から前記基板裏面が向く側に前記第1樹脂層を研削し、前記第1導電体の一部を前記第1樹脂層から露出させることで、各々が前記第1方向において前記基板主面と同じ側を向く第1導電体主面および第1樹脂層主面を形成する第1樹脂層研削工程と、
前記第1樹脂層研削工程後に、前記第1方向において、前記第1導電体主面を前記第1樹脂層主面に対して窪ませる工程と、
前記第1樹脂層主面と前記第1導電体主面とに跨る第1配線層を形成する第1配線層形成工程と、
前記第1配線層の上に、第1電子部品を導通接合する第1電子部品搭載工程と、
前記第1配線層および前記第1電子部品を覆う第2樹脂層を形成する第2樹脂層形成工程と、
前記支持基板を除去することで、前記第1方向において前記第1樹脂層主面と反対側を向く第1樹脂層裏面を露出させる支持基板除去工程と、
前記第1樹脂層よりも前記第1樹脂層裏面が向く方向側に配置され、前記第1導電体に導通する外部電極を形成する外部電極形成工程と、
を有することを特徴とする電子装置の製造方法。 - 前記支持基板用意工程の後であり、前記第1導電体形成工程の前に、前記基板主面の一部を覆う第2配線層を形成する第2配線層形成工程をさらに有しており、
前記第1導電体形成工程では、前記第2配線層の上に、前記第1導電体を形成する、
請求項23に記載の電子装置の製造方法。 - 前記第2配線層の上に、第2電子部品を導通接合する第2電子部品搭載工程をさらに有する、
請求項24に記載の電子装置の製造方法。 - 前記第1樹脂層研削工程の後であって、前記第2樹脂層形成工程の前に、前記第1樹脂層の一部の上に、第2導電体を形成する第2導電体形成工程をさらに有している、
請求項23ないし請求項25のいずれか一項に記載の電子装置の製造方法。 - 第1方向において互いに反対側を向く基板主面および基板裏面を有する支持基板を用意する支持基板用意工程と、
前記基板主面の上に、第1導電体を形成する第1導電体形成工程と、
前記第1導電体を覆う第1樹脂層を形成する第1樹脂層形成工程と、
前記第1方向において前記基板主面が向く側から前記基板裏面が向く側に前記第1樹脂層を研削し、前記第1導電体の一部を前記第1樹脂層から露出させることで、各々が前記第1方向において前記基板主面と同じ側を向く第1導電体主面および第1樹脂層主面を形
成する第1樹脂層研削工程と、
前記第1樹脂層主面と前記第1導電体主面とに跨る第1配線層を形成する第1配線層形成工程と、
前記第1配線層の上に、第1電子部品を導通接合する第1電子部品搭載工程と、
前記第1配線層および前記第1電子部品を覆う第2樹脂層を形成する第2樹脂層形成工程と、
前記支持基板を除去することで、前記第1方向において前記第1樹脂層主面と反対側を向く第1樹脂層裏面を露出させる支持基板除去工程と、
前記第1樹脂層よりも前記第1樹脂層裏面が向く方向側に配置され、前記第1導電体に導通する外部電極を形成する外部電極形成工程と、
を有しており、
前記第1樹脂層研削工程の後であって、前記第2樹脂層形成工程の前に、前記第1樹脂層の一部の上に、第2導電体を形成する第2導電体形成工程をさらに有している、
ことを特徴とする電子装置の製造方法。
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