JP7254722B2 - 硬質研磨粒子を用いない硬質材料研磨 - Google Patents

硬質研磨粒子を用いない硬質材料研磨 Download PDF

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Publication number
JP7254722B2
JP7254722B2 JP2019567975A JP2019567975A JP7254722B2 JP 7254722 B2 JP7254722 B2 JP 7254722B2 JP 2019567975 A JP2019567975 A JP 2019567975A JP 2019567975 A JP2019567975 A JP 2019567975A JP 7254722 B2 JP7254722 B2 JP 7254722B2
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slurry solution
slurry
particles
less
hard
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Japanese (ja)
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JP2020527851A5 (https=
JP2020527851A (ja
Inventor
シング，ラジヴ，ケー．
アージュナン，アルル，チャッカラヴァルシ
シング，ディーピカ
ギンデ，チャイタニヤ
ジャワリ，プニート
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University of Florida Research Foundation Inc
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University of Florida Research Foundation Inc
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2019567975A 2017-07-10 2018-07-10 硬質研磨粒子を用いない硬質材料研磨 Active JP7254722B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/645,777 2017-07-10
US15/645,777 US11078380B2 (en) 2017-07-10 2017-07-10 Hard abrasive particle-free polishing of hard materials
PCT/US2018/041428 WO2019014213A1 (en) 2017-07-10 2018-07-10 POLISHING WITHOUT HARD ABRASIVE PARTICLES OF HARD MATERIALS

Publications (3)

Publication Number Publication Date
JP2020527851A JP2020527851A (ja) 2020-09-10
JP2020527851A5 JP2020527851A5 (https=) 2022-12-15
JP7254722B2 true JP7254722B2 (ja) 2023-04-10

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JP2019567975A Active JP7254722B2 (ja) 2017-07-10 2018-07-10 硬質研磨粒子を用いない硬質材料研磨

Country Status (6)

Country Link
US (3) US11078380B2 (https=)
EP (1) EP3652260A1 (https=)
JP (1) JP7254722B2 (https=)
KR (3) KR20240013840A (https=)
CN (1) CN111094482B (https=)
WO (1) WO2019014213A1 (https=)

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US11078380B2 (en) 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials
US10647887B2 (en) * 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
TWI861353B (zh) 2020-01-31 2024-11-11 美商恩特葛瑞斯股份有限公司 用於研磨硬質材料之化學機械研磨(cmp)組合物
IT202000016279A1 (it) * 2020-07-06 2022-01-06 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo semiconduttore in carburo di silicio con migliorate caratteristiche
WO2022240842A1 (en) 2021-05-13 2022-11-17 Araca, Inc. Silicon carbide (sic) wafer polishing with slurry formulation and process
EP4363635A4 (en) 2021-06-30 2025-04-30 Entegris, Inc. POLISHING TRANSITION METALS
WO2024004752A1 (ja) * 2022-06-27 2024-01-04 三井金属鉱業株式会社 ＳｉＣ基板の製造方法、及びＳｉＣ基板研磨用研磨材スラリー
JP2025539348A (ja) * 2022-11-23 2025-12-05 エンジス コーポレイション 固定砥粒ナノ研削プレート、関連物品および関連方法
WO2025141715A1 (ja) * 2023-12-26 2025-07-03 三井金属鉱業株式会社 研磨材スラリー及びその研磨方法

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WO2013054883A1 (ja) 2011-10-13 2013-04-18 三井金属鉱業株式会社 研摩材スラリー及び研摩方法
JP2014168067A (ja) 2014-03-25 2014-09-11 Asahi Glass Co Ltd 非酸化物単結晶基板の研磨方法
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WO2016158328A1 (ja) 2015-04-01 2016-10-06 三井金属鉱業株式会社 研摩材および研摩スラリー
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Publication number Priority date Publication date Assignee Title
JP2001288456A (ja) 2000-02-23 2001-10-16 Fujimi America Inc 研磨用組成物およびそれを用いたメモリハードディスク製造方法
JP2005522027A (ja) 2002-03-25 2005-07-21 アドバンスド．テクノロジー．マテリアルス．インコーポレイテッド 半導体基板洗浄のためのｐｈ緩衝組成物
JP2007075928A (ja) 2005-09-13 2007-03-29 Toray Ind Inc 研磨パッドおよび研磨装置
WO2013054883A1 (ja) 2011-10-13 2013-04-18 三井金属鉱業株式会社 研摩材スラリー及び研摩方法
JP2016502757A (ja) 2012-11-06 2016-01-28 シンマット, インコーポレーテッドSinmat, Inc. 平滑なダイヤモンド表面、及びその形成のためのｃｍｐ方法
JP2014168067A (ja) 2014-03-25 2014-09-11 Asahi Glass Co Ltd 非酸化物単結晶基板の研磨方法
JP2017532774A (ja) 2014-08-28 2017-11-02 シンマット, インコーポレーテッドSinmat, Inc. 軟質コア複合粒子による硬質基板の研磨
WO2016158328A1 (ja) 2015-04-01 2016-10-06 三井金属鉱業株式会社 研摩材および研摩スラリー
JP2020527851A (ja) 2017-07-10 2020-09-10 シンマット, インコーポレーテッドSinmat, Inc. 硬質研磨粒子を用いない硬質材料研磨

Also Published As

Publication number Publication date
CN111094482A (zh) 2020-05-01
KR20220065087A (ko) 2022-05-19
CN111094482B (zh) 2022-07-29
EP3652260A1 (en) 2020-05-20
US20200102479A1 (en) 2020-04-02
KR20200026937A (ko) 2020-03-11
JP2020527851A (ja) 2020-09-10
US20210324238A1 (en) 2021-10-21
US20190010356A1 (en) 2019-01-10
US11078380B2 (en) 2021-08-03
WO2019014213A1 (en) 2019-01-17
KR20240013840A (ko) 2024-01-30
US11820918B2 (en) 2023-11-21

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