JP2020527851A - 硬質研磨粒子を用いない硬質材料研磨 - Google Patents
硬質研磨粒子を用いない硬質材料研磨 Download PDFInfo
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- JP2020527851A JP2020527851A JP2019567975A JP2019567975A JP2020527851A JP 2020527851 A JP2020527851 A JP 2020527851A JP 2019567975 A JP2019567975 A JP 2019567975A JP 2019567975 A JP2019567975 A JP 2019567975A JP 2020527851 A JP2020527851 A JP 2020527851A
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- Prior art keywords
- slurry
- slurry solution
- polishing
- oxidant
- hard
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- 238000005498 polishing Methods 0.000 title claims abstract description 74
- 239000002245 particle Substances 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 title description 24
- 239000002002 slurry Substances 0.000 claims abstract description 114
- 239000007800 oxidant agent Substances 0.000 claims abstract description 45
- 239000000872 buffer Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000002253 acid Substances 0.000 claims abstract description 22
- 230000008859 change Effects 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims description 29
- 239000004094 surface-active agent Substances 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 13
- 239000006172 buffering agent Substances 0.000 claims description 10
- 238000003825 pressing Methods 0.000 claims description 10
- 229910001413 alkali metal ion Inorganic materials 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 229910001428 transition metal ion Inorganic materials 0.000 claims description 8
- 238000011065 in-situ storage Methods 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000003125 aqueous solvent Substances 0.000 claims description 5
- 150000001247 metal acetylides Chemical class 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 claims description 3
- 239000012286 potassium permanganate Substances 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000000243 solution Substances 0.000 description 40
- 238000002474 experimental method Methods 0.000 description 18
- 238000007517 polishing process Methods 0.000 description 14
- 239000011572 manganese Substances 0.000 description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- -1 oxides Chemical class 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000002736 nonionic surfactant Substances 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 229920002635 polyurethane Polymers 0.000 description 8
- 239000004814 polyurethane Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 7
- 239000000654 additive Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 229910052700 potassium Inorganic materials 0.000 description 7
- 239000011591 potassium Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 230000002572 peristaltic effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 5
- 239000002202 Polyethylene glycol Substances 0.000 description 5
- 150000007513 acids Chemical class 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 5
- 150000002894 organic compounds Chemical class 0.000 description 5
- 150000002978 peroxides Chemical class 0.000 description 5
- 229920001223 polyethylene glycol Polymers 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 230000003139 buffering effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 229910001437 manganese ion Inorganic materials 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 229910001018 Cast iron Inorganic materials 0.000 description 3
- WAEMQWOKJMHJLA-UHFFFAOYSA-N Manganese(2+) Chemical compound [Mn+2] WAEMQWOKJMHJLA-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 150000002843 nonmetals Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- CMCBDXRRFKYBDG-UHFFFAOYSA-N 1-dodecoxydodecane Chemical compound CCCCCCCCCCCCOCCCCCCCCCCCC CMCBDXRRFKYBDG-UHFFFAOYSA-N 0.000 description 2
- IEQAICDLOKRSRL-UHFFFAOYSA-N 2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-(2-dodecoxyethoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethanol Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO IEQAICDLOKRSRL-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000003851 azoles Chemical class 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 235000021317 phosphate Nutrition 0.000 description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- XXQBEVHPUKOQEO-UHFFFAOYSA-N potassium superoxide Chemical compound [K+].[K+].[O-][O-] XXQBEVHPUKOQEO-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910020366 ClO 4 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000012425 OXONE® Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- BHDAXLOEFWJKTL-UHFFFAOYSA-L dipotassium;carboxylatooxy carbonate Chemical compound [K+].[K+].[O-]C(=O)OOC([O-])=O BHDAXLOEFWJKTL-UHFFFAOYSA-L 0.000 description 1
- JZBWUTVDIDNCMW-UHFFFAOYSA-L dipotassium;oxido sulfate Chemical compound [K+].[K+].[O-]OS([O-])(=O)=O JZBWUTVDIDNCMW-UHFFFAOYSA-L 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- SYELZBGXAIXKHU-UHFFFAOYSA-N dodecyldimethylamine N-oxide Chemical compound CCCCCCCCCCCC[N+](C)(C)[O-] SYELZBGXAIXKHU-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930182478 glucoside Natural products 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229920013746 hydrophilic polyethylene oxide Polymers 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ZPIRTVJRHUMMOI-UHFFFAOYSA-N octoxybenzene Chemical compound CCCCCCCCOC1=CC=CC=C1 ZPIRTVJRHUMMOI-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical compound OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- OKBMCNHOEMXPTM-UHFFFAOYSA-M potassium peroxymonosulfate Chemical compound [K+].OOS([O-])(=O)=O OKBMCNHOEMXPTM-UHFFFAOYSA-M 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000003760 tallow Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 239000002888 zwitterionic surfactant Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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Abstract
Description
BR=Mba/Mnba
ここで、Mbaは、ある濃度の過化合物酸化剤を含むスラリー溶液のpHを緩衝剤の存在下で9.0から3.0に変化させるのに必要な強酸のモル数であり、Mnbaは、スラリー溶液が同じ濃度の過化合物酸化剤のみを含み、緩衝剤を含まない場合にpHを9.0から3.0に変化させるのに必要な同じ酸のモル数である。
9インチの定盤を備えたCETR社(現Bruker社)の研磨装置を用い、パッドを毎分100回転(rpm)、サンプルを毎分60回転(rpm)で回転させながら6.3psiの圧力で互いに押し付けて実験を行った。研磨プロセスには、ショアD硬度が100未満の軟質ポリウレタンパッド(Cabot社製D100)を用いた。過化合物酸化剤としてのKMnO4を0.30mol/Lの濃度で水に溶解したpH1〜13のスラリーを、蠕動ポンプを用いて研磨パッド上に滴下した。スラリー溶液は、30〜40mL/minで滴下した。
12インチの定盤を備えたBuehler社製の研磨装置を用い、パッドを90rpm、サンプルを60rpmで回転させながら様々な圧力で互いに押し付けて実験を行った。過化合物酸化剤としてのKMnO4を0.1mol/Lの濃度で水に溶解したpH2のスラリーを、研磨実験中に蠕動ポンプを用いて滴下した。この研磨プロセスには、ショアD硬度が約40のポリウレタンパッド(Cabot社製D100)を用いた。上記プロセスを様々なパッド圧力で行った際のSiCウェハC面の除去率を以下の表に示す。ショアD硬度が10〜100の範囲又はショアA硬度5〜100の範囲のポリマパッドを用いれば、かかるスラリーでの研磨速度が高くなると予想されることに留意されたい。
12インチの定盤を備えたBuehler社製の研磨装置を用い、パッドを90rpm、サンプルを60rpmで回転させながら6.3psiの圧力で互いに押し付けて実験を行った。過化合物酸化剤としてのKMnO4を0.4mol/Lの濃度で水に溶解したpH2のスラリーを用いた。ホットプレートを用いて溶液を様々な温度に加熱した。様々な温度に加熱した溶液を、研磨実験中に蠕動ポンプを用いて滴下した。この研磨プロセスには、ポリウレタンパッド(Cabot社製D100)を用いた。上記プロセスを様々な温度で行った際のSiCウェハC面の除去率を以下の表に示す。ショアD硬度が10〜100の範囲又はショアA硬度5〜100の範囲のポリマパッドを用いれば、かかるスラリーでの研磨速度が高くなると予想されることに留意されたい。
12インチの定盤を備えたBuehler社製の研磨装置を用い、パッドを90rpm、サンプルを60rpmで回転させながら6.3psiの圧力で互いに押し付けて実験を行った。0.05mol/Lの濃度の過化合物酸化剤としてのKMnO4と、様々な濃度の異なる(有機及び無機)塩を水に溶解したpH1.6のスラリーを用いた。この混合スラリー溶液を、研磨実験中に蠕動ポンプを用いてパッド上に滴下した。この研磨プロセスには、ポリウレタンパッド(Cabot社製D100)を用いた。上記プロセスを異なる塩を添加して行った際のSiCウェハC面の除去率を以下の表に示す。
12インチの定盤を備えたBuehler社製の研磨装置を用い、パッドを90rpm、サンプルを60rpmで回転させながら6.3psiの圧力で互いに押し付けて実験を行った。過化合物酸化剤としてのKMnO4を0.1mol/Lの濃度で水に溶解したpH2のスラリーを、研磨実験中に蠕動ポンプを用いてパッド上に滴下した。実験は、ポリウレタン、微孔質、銅複合材(銅とエポキシ)で作られた研磨パッド、及び、金属めっき銅及び鋳鉄の金属板を用いて行った。微孔質パッドは、ショアA硬度が20未満のポリマで構成されている。上記プロセスを様々な種類のパッドを用いて行った際のSiCウェハC面とGaNウェハGa面の除去率を以下の表に示す。
9インチの定盤を備えた研磨装置CETR−CP−4を用い、パッドを100rpm、サンプルを60rpmで回転させながら6.3psiの圧力で互いに押し付けて実験を行った。過化合物酸化剤としてのKMnO4を0.03〜1.5mol/Lの濃度で水に溶解したpH2のスラリーを、研磨実験中に蠕動ポンプを用いてパッド上に滴下した。微孔性ポリウレタン材料からなるDow Electronic Materials社製の研磨パッドIC1000を使用した。様々な硬質基板を用いて実験を行った際に各基板で得られた除去率を以下の表に示す。
12インチの定盤を備えたBuehler社製の研磨装置を用い、パッドを90rpm、多結晶炭化ケイ素on−axis基板のサンプルを60rpmで回転させながら6.3psiの圧力で互いに押し付けて実験を行った。過化合物酸化剤としてのKMnO4を0.3mol/Lの濃度で水に溶解したpH3のスラリーを、様々な界面活性剤と、OH基とMn2+イオンを含む有機化合物の濃縮物と混合し、研磨実験中に蠕動ポンプを用いてパッド上に滴下した。様々な基板を用いて実験を行った際の各添加剤が含まれる場合の除去率をKMnO4(0.25mol/L)溶液の場合の値で正規化したものを以下の表に示す。
12インチの定盤を備えたBuehler社製の研磨装置を用い、パッドを90rpm、4H炭化ケイ素Si面ウェハのon−axis基板サンプルを60rpmで回転させながら6.3psiの圧力で互いに押し付けて実験を行った。過化合物酸化剤としてのKMnO4を0.3Mの濃度で水に溶解したpH3のスラリーを、ビッカース硬度200Kg/mm2未満又はモース硬度3未満であり、電荷状態がMn2+、Mn3+、Mn4+及びMn7+の酸化マンガン(MnO2など)の軟質酸化物と混合し、研磨実験中に蠕動ポンプを用いてパッド上に滴下した。この研磨プロセスには、ポリウレタンパッド(Cabot社製D100)を用いた。様々な基板を用いて実験を行った際の各添加剤が含まれる場合の除去率をKMnO4(0.3mol/L)溶液の場合の値で正規化したものを以下の表に示す。
101 ステップ
102 ステップ
103 ステップ
Claims (18)
- 水性溶媒と、
濃度が0.01M〜2.0Mである少なくとも1種類の過化合物酸化剤と、
1〜5又は8〜11のpH値と、
前記過化合物酸化剤とは異なる緩衝剤であって、前記スラリー溶液が前記緩衝剤を含まない場合の前記pH値を9.0から3.0に変化させるのに必要な前記強酸の量に対し、前記水性溶媒と前記過化合物酸化剤を含むスラリー溶液中に前記緩衝剤が含まれる場合の前記pH値を9.0から3.0に下げるのに必要な強酸の量を比較した値である緩衝比を、1.5以上とする少なくとも1種類の緩衝剤を含み、
前記スラリー溶液は、硬質のスラリー粒子を含まない、又は、全体にビッカース硬度が300Kg/mm2未満又はモース硬度が4未満である軟質のスラリー粒子のみを有することを特徴とする、化学機械研磨(CMP)用スラリー。 - 前記スラリー溶液は、前記過化合物酸化剤中に存在しうる遷移金属イオンに加え、0.03M〜1Mの濃度の遷移金属イオンを更に含む、請求項1に記載のスラリー。
- 前記スラリー溶液は、前記過化合物酸化剤の分解により前記スラリー溶液中でin−situ形成された金属酸化物からなる前記軟質のスラリー粒子を含む、請求項1に記載のスラリー。
- 前記緩衝剤は、界面活性剤と、+7、+4、+2、及び+3から選択される少なくとも2種類の異なる原子価状態にあるMnイオンを含む前記過化合物酸化剤と、のうちの少なくとも1つを含む、請求項1に記載のスラリー。
- 前記過化合物酸化剤は、過マンガン酸カリウム又は過マンガン酸ナトリウムを含む、請求項1に記載のスラリー。
- 前記緩衝剤は、前記界面活性剤からなる、請求項4に記載のスラリー。
- 前記過化合物酸化剤がアルカリ金属イオンを含む場合に、前記スラリー溶液は、前記過化合物酸化剤中のアルカリ金属イオンの他に、少なくとも1種類のアルカリ金属イオンを更に含む、請求項1に記載のスラリー。
- 前記スラリー溶液は粒子を含まない、請求項1に記載のスラリー。
- 水性溶媒と、濃度が0.01M〜2.0Mである少なくとも1種類の過化合物酸化剤と、1〜5又は8〜11のpH値と、前記過化合物酸化剤とは異なる緩衝剤であって、前記スラリー溶液が前記緩衝剤を含まない場合の前記pH値を9.0から3.0に下げるのに必要な前記強酸の量に対し、前記水性溶媒と前記過化合物酸化剤を含むスラリー溶液中に前記緩衝剤が含まれる場合の前記pH値を9.0から3.0に下げるのに必要な強酸の量を比較した値である緩衝比を、1.5以上とする少なくとも1種類の緩衝剤を含み、硬質のスラリー粒子を含まない、又は、全体にビッカース硬度が300Kg/mm2未満又はモース硬度が4未満である軟質のスラリー粒子のみを有するスラリー溶液を提供し、
ビッカース硬度が1,000Kg/mm2より大きい硬質表面に前記スラリー溶液を滴下し、
前記硬質表面に対して研磨パッドを回転させながら、間に前記スラリー溶液を挟んで前記研磨パッドで前記硬質表面を押圧することを含む、硬質表面の化学機械研磨(CMP)方法。 - 前記硬質表面は、炭化物、窒化物、又は、その混合物からなる、請求項9に記載の方法。
- 前記スラリー溶液は、前記過化合物酸化剤中に存在しうる遷移金属イオンに加え、0.03M〜1Mの濃度の遷移金属イオンを更に含む、請求項9に記載の方法。
- 前記研磨パッドは、ショアD硬度が100未満のポリマパッドからなり、前記押圧における研磨圧は15psi未満である、請求項9に記載の方法。
- 前記スラリー溶液は、前記過化合物酸化剤の分解により前記スラリー溶液中でin−situ形成された金属酸化物からなる前記軟質のスラリー粒子を更に含む、請求項9に記載の方法。
- 前記緩衝剤は、界面活性剤と、+7、+4、+2、及び+3から選択される少なくとも2種類の異なる原子価状態にあるMnイオンを含む前記過化合物酸化剤とのうちの少なくとも1つを含む、請求項9に記載の方法。
- 前記過化合物酸化剤は、過マンガン酸カリウム又は過マンガン酸ナトリウムを含む、請求項9に記載の方法。
- 前記緩衝剤は、前記界面活性剤からなる、請求項14に記載の方法。
- 前記過化合物酸化剤がアルカリ金属イオンを含む場合に、前記スラリー溶液は、前記過化合物酸化剤中のアルカリ金属イオンの他に、少なくとも1種類のアルカリ金属イオンを更に含む、請求項9に記載の方法。
- 前記スラリー溶液は粒子を含まない、請求項9に記載の方法。
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- 2018-07-10 JP JP2019567975A patent/JP7254722B2/ja active Active
- 2018-07-10 EP EP18752904.5A patent/EP3652260A1/en active Pending
- 2018-07-10 KR KR1020227015416A patent/KR20220065087A/ko not_active Application Discontinuation
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Also Published As
Publication number | Publication date |
---|---|
KR20200026937A (ko) | 2020-03-11 |
KR20220065087A (ko) | 2022-05-19 |
JP7254722B2 (ja) | 2023-04-10 |
US20200102479A1 (en) | 2020-04-02 |
US11820918B2 (en) | 2023-11-21 |
US20190010356A1 (en) | 2019-01-10 |
CN111094482A (zh) | 2020-05-01 |
US20210324238A1 (en) | 2021-10-21 |
KR20240013840A (ko) | 2024-01-30 |
CN111094482B (zh) | 2022-07-29 |
WO2019014213A1 (en) | 2019-01-17 |
EP3652260A1 (en) | 2020-05-20 |
US11078380B2 (en) | 2021-08-03 |
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