CN111094482B - 硬质材料的无硬质研磨粒子抛光 - Google Patents

硬质材料的无硬质研磨粒子抛光 Download PDF

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Publication number
CN111094482B
CN111094482B CN201880046086.8A CN201880046086A CN111094482B CN 111094482 B CN111094482 B CN 111094482B CN 201880046086 A CN201880046086 A CN 201880046086A CN 111094482 B CN111094482 B CN 111094482B
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China
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slurry
particles
buffer
per
compound
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CN201880046086.8A
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Chinese (zh)
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CN111094482A (zh
Inventor
R·K·辛格
A·C·阿尔俊安
D·辛格
C·金德
P·贾瓦利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Entegris Inc
University of Florida Research Foundation Inc
Original Assignee
Cimet Co ltd
Entegris Inc
University of Florida Research Foundation Inc
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Publication of CN111094482A publication Critical patent/CN111094482A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201880046086.8A 2017-07-10 2018-07-10 硬质材料的无硬质研磨粒子抛光 Active CN111094482B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/645,777 2017-07-10
US15/645,777 US11078380B2 (en) 2017-07-10 2017-07-10 Hard abrasive particle-free polishing of hard materials
PCT/US2018/041428 WO2019014213A1 (en) 2017-07-10 2018-07-10 POLISHING WITHOUT HARD ABRASIVE PARTICLES OF HARD MATERIALS

Publications (2)

Publication Number Publication Date
CN111094482A CN111094482A (zh) 2020-05-01
CN111094482B true CN111094482B (zh) 2022-07-29

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CN201880046086.8A Active CN111094482B (zh) 2017-07-10 2018-07-10 硬质材料的无硬质研磨粒子抛光

Country Status (6)

Country Link
US (3) US11078380B2 (https=)
EP (1) EP3652260A1 (https=)
JP (1) JP7254722B2 (https=)
KR (3) KR20240013840A (https=)
CN (1) CN111094482B (https=)
WO (1) WO2019014213A1 (https=)

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US11078380B2 (en) 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials
US10647887B2 (en) * 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
TWI861353B (zh) 2020-01-31 2024-11-11 美商恩特葛瑞斯股份有限公司 用於研磨硬質材料之化學機械研磨(cmp)組合物
IT202000016279A1 (it) * 2020-07-06 2022-01-06 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo semiconduttore in carburo di silicio con migliorate caratteristiche
WO2022240842A1 (en) 2021-05-13 2022-11-17 Araca, Inc. Silicon carbide (sic) wafer polishing with slurry formulation and process
EP4363635A4 (en) 2021-06-30 2025-04-30 Entegris, Inc. POLISHING TRANSITION METALS
WO2024004752A1 (ja) * 2022-06-27 2024-01-04 三井金属鉱業株式会社 ＳｉＣ基板の製造方法、及びＳｉＣ基板研磨用研磨材スラリー
JP2025539348A (ja) * 2022-11-23 2025-12-05 エンジス コーポレイション 固定砥粒ナノ研削プレート、関連物品および関連方法
WO2025141715A1 (ja) * 2023-12-26 2025-07-03 三井金属鉱業株式会社 研磨材スラリー及びその研磨方法

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CN1333317A (zh) * 2000-01-18 2002-01-30 普莱克斯·S·T·技术有限公司 抛光浆料
CN1735670A (zh) * 2003-01-03 2006-02-15 气体产品及化学制品公司 用于金属的化学机械平面化的组合物和方法
CN1521226A (zh) * 2003-02-14 2004-08-18 ��ʽ���綫֥ Cmp用料浆以及制造半导体器件的方法
CN1868674A (zh) * 2005-04-26 2006-11-29 住友电气工业株式会社 表面处理方法，晶体基材，和半导体设备
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Also Published As

Publication number Publication date
JP7254722B2 (ja) 2023-04-10
CN111094482A (zh) 2020-05-01
KR20220065087A (ko) 2022-05-19
EP3652260A1 (en) 2020-05-20
US20200102479A1 (en) 2020-04-02
KR20200026937A (ko) 2020-03-11
JP2020527851A (ja) 2020-09-10
US20210324238A1 (en) 2021-10-21
US20190010356A1 (en) 2019-01-10
US11078380B2 (en) 2021-08-03
WO2019014213A1 (en) 2019-01-17
KR20240013840A (ko) 2024-01-30
US11820918B2 (en) 2023-11-21

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