KR20240013840A - 경질 재료의 경질 연마 입자를 포함하지 않는 연마 방법 - Google Patents

경질 재료의 경질 연마 입자를 포함하지 않는 연마 방법 Download PDF

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Publication number
KR20240013840A
KR20240013840A KR1020247000707A KR20247000707A KR20240013840A KR 20240013840 A KR20240013840 A KR 20240013840A KR 1020247000707 A KR1020247000707 A KR 1020247000707A KR 20247000707 A KR20247000707 A KR 20247000707A KR 20240013840 A KR20240013840 A KR 20240013840A
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KR
South Korea
Prior art keywords
slurry
hard
polishing
liter
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247000707A
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English (en)
Korean (ko)
Inventor
라지브 케이. 싱하
아룰 챠카라바르티 아르주난
디피카 싱하
차이탄야 긴데
푸닛 자왈리
Original Assignee
엔테그리스, 아이엔씨.
유니버시티 오브 플로리다 리서치 파운데이션, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엔테그리스, 아이엔씨., 유니버시티 오브 플로리다 리서치 파운데이션, 인크. filed Critical 엔테그리스, 아이엔씨.
Publication of KR20240013840A publication Critical patent/KR20240013840A/ko
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020247000707A 2017-07-10 2018-07-10 경질 재료의 경질 연마 입자를 포함하지 않는 연마 방법 Pending KR20240013840A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15/645,777 2017-07-10
US15/645,777 US11078380B2 (en) 2017-07-10 2017-07-10 Hard abrasive particle-free polishing of hard materials
KR1020227015416A KR20220065087A (ko) 2017-07-10 2018-07-10 경질 재료의 경질 연마 입자를 포함하지 않는 연마 방법
PCT/US2018/041428 WO2019014213A1 (en) 2017-07-10 2018-07-10 POLISHING WITHOUT HARD ABRASIVE PARTICLES OF HARD MATERIALS

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020227015416A Division KR20220065087A (ko) 2017-07-10 2018-07-10 경질 재료의 경질 연마 입자를 포함하지 않는 연마 방법

Publications (1)

Publication Number Publication Date
KR20240013840A true KR20240013840A (ko) 2024-01-30

Family

ID=63165459

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020247000707A Pending KR20240013840A (ko) 2017-07-10 2018-07-10 경질 재료의 경질 연마 입자를 포함하지 않는 연마 방법
KR1020207003213A Ceased KR20200026937A (ko) 2017-07-10 2018-07-10 경질 재료의 경질 연마 입자를 포함하지 않는 연마 방법
KR1020227015416A Ceased KR20220065087A (ko) 2017-07-10 2018-07-10 경질 재료의 경질 연마 입자를 포함하지 않는 연마 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020207003213A Ceased KR20200026937A (ko) 2017-07-10 2018-07-10 경질 재료의 경질 연마 입자를 포함하지 않는 연마 방법
KR1020227015416A Ceased KR20220065087A (ko) 2017-07-10 2018-07-10 경질 재료의 경질 연마 입자를 포함하지 않는 연마 방법

Country Status (6)

Country Link
US (3) US11078380B2 (https=)
EP (1) EP3652260A1 (https=)
JP (1) JP7254722B2 (https=)
KR (3) KR20240013840A (https=)
CN (1) CN111094482B (https=)
WO (1) WO2019014213A1 (https=)

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US11078380B2 (en) 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials
US10647887B2 (en) * 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
TWI861353B (zh) 2020-01-31 2024-11-11 美商恩特葛瑞斯股份有限公司 用於研磨硬質材料之化學機械研磨(cmp)組合物
IT202000016279A1 (it) * 2020-07-06 2022-01-06 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo semiconduttore in carburo di silicio con migliorate caratteristiche
WO2022240842A1 (en) 2021-05-13 2022-11-17 Araca, Inc. Silicon carbide (sic) wafer polishing with slurry formulation and process
EP4363635A4 (en) 2021-06-30 2025-04-30 Entegris, Inc. POLISHING TRANSITION METALS
WO2024004752A1 (ja) * 2022-06-27 2024-01-04 三井金属鉱業株式会社 ＳｉＣ基板の製造方法、及びＳｉＣ基板研磨用研磨材スラリー
JP2025539348A (ja) * 2022-11-23 2025-12-05 エンジス コーポレイション 固定砥粒ナノ研削プレート、関連物品および関連方法
WO2025141715A1 (ja) * 2023-12-26 2025-07-03 三井金属鉱業株式会社 研磨材スラリー及びその研磨方法

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US7316603B2 (en) 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
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JP2004247605A (ja) * 2003-02-14 2004-09-02 Toshiba Corp Ｃｍｐ用スラリーおよび半導体装置の製造方法
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Also Published As

Publication number Publication date
JP7254722B2 (ja) 2023-04-10
CN111094482A (zh) 2020-05-01
KR20220065087A (ko) 2022-05-19
CN111094482B (zh) 2022-07-29
EP3652260A1 (en) 2020-05-20
US20200102479A1 (en) 2020-04-02
KR20200026937A (ko) 2020-03-11
JP2020527851A (ja) 2020-09-10
US20210324238A1 (en) 2021-10-21
US20190010356A1 (en) 2019-01-10
US11078380B2 (en) 2021-08-03
WO2019014213A1 (en) 2019-01-17
US11820918B2 (en) 2023-11-21

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