WO2008102672A1 - 研磨スラリーおよびその製造方法、ならびに窒化物結晶体およびその表面研磨方法 - Google Patents
研磨スラリーおよびその製造方法、ならびに窒化物結晶体およびその表面研磨方法 Download PDFInfo
- Publication number
- WO2008102672A1 WO2008102672A1 PCT/JP2008/052303 JP2008052303W WO2008102672A1 WO 2008102672 A1 WO2008102672 A1 WO 2008102672A1 JP 2008052303 W JP2008052303 W JP 2008052303W WO 2008102672 A1 WO2008102672 A1 WO 2008102672A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crystalline material
- nitride crystalline
- polishing
- slurry
- polishing slurry
- Prior art date
Links
- 239000002002 slurry Substances 0.000 title abstract 6
- 150000004767 nitrides Chemical class 0.000 title abstract 5
- 239000002178 crystalline material Substances 0.000 title abstract 4
- 238000005498 polishing Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002270 dispersing agent Substances 0.000 abstract 2
- 239000006061 abrasive grain Substances 0.000 abstract 1
- 125000000129 anionic group Chemical group 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31—Surface property or characteristic of web, sheet or block
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008530262A JPWO2008102672A1 (ja) | 2007-02-20 | 2008-02-13 | 研磨スラリーおよびその製造方法、ならびに窒化物結晶体およびその表面研磨方法 |
EP08711161A EP2039474A1 (en) | 2007-02-20 | 2008-02-13 | Polishing slurry, method for manufacturing the polishing slurry, nitride crystalline material and method for polishing surface of the nitride crystalline material |
US12/297,569 US20090317638A1 (en) | 2007-02-20 | 2008-02-13 | Polishing slurry, method for manufacturing the polishing slurry, nitride crystalline material and method for plishing surface of the nitride crystalline material |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-039584 | 2007-02-20 | ||
JP2007039584 | 2007-02-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008102672A1 true WO2008102672A1 (ja) | 2008-08-28 |
Family
ID=39709949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/052303 WO2008102672A1 (ja) | 2007-02-20 | 2008-02-13 | 研磨スラリーおよびその製造方法、ならびに窒化物結晶体およびその表面研磨方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090317638A1 (ja) |
EP (1) | EP2039474A1 (ja) |
JP (1) | JPWO2008102672A1 (ja) |
KR (1) | KR20090010169A (ja) |
CN (1) | CN101541476A (ja) |
TW (1) | TW200848500A (ja) |
WO (1) | WO2008102672A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100258528A1 (en) * | 2009-04-13 | 2010-10-14 | Sinmat, Inc. | Chemical mechanical polishing of silicon carbide comprising surfaces |
WO2011142052A1 (ja) * | 2010-05-10 | 2011-11-17 | 住友電気工業株式会社 | 研磨剤、化合物半導体の製造方法および半導体デバイスの製造方法 |
WO2016158328A1 (ja) * | 2015-04-01 | 2016-10-06 | 三井金属鉱業株式会社 | 研摩材および研摩スラリー |
KR20160138099A (ko) * | 2014-03-31 | 2016-12-02 | 가부시키가이샤 노리타케 캄파니 리미티드 | GaN 단결정 재료의 연마 가공 방법 |
JPWO2017057155A1 (ja) * | 2015-09-30 | 2017-10-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008010835A (ja) | 2006-05-31 | 2008-01-17 | Sumitomo Electric Ind Ltd | 窒化物結晶の表面処理方法、窒化物結晶基板、エピタキシャル層付窒化物結晶基板および半導体デバイス、ならびにエピタキシャル層付窒化物結晶基板および半導体デバイスの製造方法 |
US8828874B2 (en) | 2011-03-28 | 2014-09-09 | Sinmat, Inc. | Chemical mechanical polishing of group III-nitride surfaces |
KR101704411B1 (ko) | 2011-09-26 | 2017-02-08 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 연마 미립자 소재를 포함하는 연마 물품, 연마 미립자 소재를 이용하는 코팅 연마제 및 형성 방법 |
KR101861894B1 (ko) * | 2015-05-15 | 2018-05-29 | 삼성에스디아이 주식회사 | 유기막 cmp 슬러리 조성물 및 이를 이용한 연마방법 |
CN109153889B (zh) | 2016-05-19 | 2021-10-29 | 东进世美肯株式会社 | 用于化学机械抛光的浆料组合物 |
US11078380B2 (en) * | 2017-07-10 | 2021-08-03 | Entegris, Inc. | Hard abrasive particle-free polishing of hard materials |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01205973A (ja) * | 1988-02-09 | 1989-08-18 | Mitsubishi Kasei Corp | 研磨用組成物 |
JP2001035819A (ja) | 1999-07-16 | 2001-02-09 | Nippei Toyama Corp | 研磨スラリー及びこれを用いた研磨方法 |
JP2001342456A (ja) * | 2000-01-18 | 2001-12-14 | Praxair St Technol Inc | 研磨性スラリー |
JP2003306669A (ja) | 2002-04-16 | 2003-10-31 | Nihon Micro Coating Co Ltd | 研磨スラリー |
JP2005123577A (ja) * | 2003-08-05 | 2005-05-12 | Rohm & Haas Electronic Materials Cmp Holdings Inc | 半導体ウェーハにおけるエロ−ジョンを低減させるためのケミカルメカニカルプラナリゼーション組成物 |
JP2006310362A (ja) * | 2005-04-26 | 2006-11-09 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶の表面処理方法、iii族窒化物結晶基板、エピタキシャル層付iii族窒化物結晶基板および半導体デバイス |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4956015A (en) * | 1988-01-19 | 1990-09-11 | Mitsubishi Kasei Corporation | Polishing composition |
-
2008
- 2008-02-13 KR KR1020087025632A patent/KR20090010169A/ko not_active Application Discontinuation
- 2008-02-13 WO PCT/JP2008/052303 patent/WO2008102672A1/ja active Application Filing
- 2008-02-13 JP JP2008530262A patent/JPWO2008102672A1/ja active Pending
- 2008-02-13 CN CNA2008800001666A patent/CN101541476A/zh active Pending
- 2008-02-13 US US12/297,569 patent/US20090317638A1/en not_active Abandoned
- 2008-02-13 EP EP08711161A patent/EP2039474A1/en not_active Withdrawn
- 2008-02-20 TW TW097105985A patent/TW200848500A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01205973A (ja) * | 1988-02-09 | 1989-08-18 | Mitsubishi Kasei Corp | 研磨用組成物 |
JP2001035819A (ja) | 1999-07-16 | 2001-02-09 | Nippei Toyama Corp | 研磨スラリー及びこれを用いた研磨方法 |
JP2001342456A (ja) * | 2000-01-18 | 2001-12-14 | Praxair St Technol Inc | 研磨性スラリー |
JP2003306669A (ja) | 2002-04-16 | 2003-10-31 | Nihon Micro Coating Co Ltd | 研磨スラリー |
JP2005123577A (ja) * | 2003-08-05 | 2005-05-12 | Rohm & Haas Electronic Materials Cmp Holdings Inc | 半導体ウェーハにおけるエロ−ジョンを低減させるためのケミカルメカニカルプラナリゼーション組成物 |
JP2006310362A (ja) * | 2005-04-26 | 2006-11-09 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶の表面処理方法、iii族窒化物結晶基板、エピタキシャル層付iii族窒化物結晶基板および半導体デバイス |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100258528A1 (en) * | 2009-04-13 | 2010-10-14 | Sinmat, Inc. | Chemical mechanical polishing of silicon carbide comprising surfaces |
US9368367B2 (en) * | 2009-04-13 | 2016-06-14 | Sinmat, Inc. | Chemical mechanical polishing of silicon carbide comprising surfaces |
WO2011142052A1 (ja) * | 2010-05-10 | 2011-11-17 | 住友電気工業株式会社 | 研磨剤、化合物半導体の製造方法および半導体デバイスの製造方法 |
JP2011238763A (ja) * | 2010-05-10 | 2011-11-24 | Sumitomo Electric Ind Ltd | 研磨剤、化合物半導体の製造方法および半導体デバイスの製造方法 |
US8841215B2 (en) | 2010-05-10 | 2014-09-23 | Sumitomo Electric Industries, Ltd. | Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method |
KR20160138099A (ko) * | 2014-03-31 | 2016-12-02 | 가부시키가이샤 노리타케 캄파니 리미티드 | GaN 단결정 재료의 연마 가공 방법 |
JP2018050065A (ja) * | 2014-03-31 | 2018-03-29 | 株式会社ノリタケカンパニーリミテド | GaN単結晶材料の研磨加工方法 |
US10272537B2 (en) | 2014-03-31 | 2019-04-30 | Noritake Co., Limited | Method for polishing GaN single crystal material |
KR20210000328A (ko) * | 2014-03-31 | 2021-01-04 | 가부시키가이샤 노리타케 캄파니 리미티드 | GaN 단결정 재료의 연마 가공 방법 |
KR102230101B1 (ko) | 2014-03-31 | 2021-03-18 | 가부시키가이샤 노리타케 캄파니 리미티드 | GaN 단결정 재료의 연마 가공 방법 |
KR102230096B1 (ko) | 2014-03-31 | 2021-03-18 | 가부시키가이샤 노리타케 캄파니 리미티드 | GaN 단결정 재료의 연마 가공 방법 |
WO2016158328A1 (ja) * | 2015-04-01 | 2016-10-06 | 三井金属鉱業株式会社 | 研摩材および研摩スラリー |
JPWO2016158328A1 (ja) * | 2015-04-01 | 2017-09-14 | 三井金属鉱業株式会社 | 研摩材および研摩スラリー |
JPWO2017057155A1 (ja) * | 2015-09-30 | 2017-10-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Also Published As
Publication number | Publication date |
---|---|
US20090317638A1 (en) | 2009-12-24 |
KR20090010169A (ko) | 2009-01-29 |
CN101541476A (zh) | 2009-09-23 |
TW200848500A (en) | 2008-12-16 |
JPWO2008102672A1 (ja) | 2010-05-27 |
EP2039474A1 (en) | 2009-03-25 |
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