JP7175316B2 - フォトレジストリムーバ組成物 - Google Patents
フォトレジストリムーバ組成物 Download PDFInfo
- Publication number
- JP7175316B2 JP7175316B2 JP2020539825A JP2020539825A JP7175316B2 JP 7175316 B2 JP7175316 B2 JP 7175316B2 JP 2020539825 A JP2020539825 A JP 2020539825A JP 2020539825 A JP2020539825 A JP 2020539825A JP 7175316 B2 JP7175316 B2 JP 7175316B2
- Authority
- JP
- Japan
- Prior art keywords
- organic solvent
- solvent component
- mixture
- component
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
- C11D1/721—End blocked ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/83—Mixtures of non-ionic with anionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/3454—Organic compounds containing sulfur containing sulfone groups, e.g. vinyl sulfones
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- General Chemical & Material Sciences (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022151512A JP2022191267A (ja) | 2018-01-25 | 2022-09-22 | フォトレジストリムーバ組成物 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862621760P | 2018-01-25 | 2018-01-25 | |
| US62/621,760 | 2018-01-25 | ||
| PCT/EP2019/051534 WO2019145312A1 (en) | 2018-01-25 | 2019-01-23 | Photoresist remover compositions |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022151512A Division JP2022191267A (ja) | 2018-01-25 | 2022-09-22 | フォトレジストリムーバ組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021511419A JP2021511419A (ja) | 2021-05-06 |
| JP2021511419A5 JP2021511419A5 (enExample) | 2022-01-11 |
| JP7175316B2 true JP7175316B2 (ja) | 2022-11-18 |
Family
ID=65228539
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020539825A Active JP7175316B2 (ja) | 2018-01-25 | 2019-01-23 | フォトレジストリムーバ組成物 |
| JP2022151512A Pending JP2022191267A (ja) | 2018-01-25 | 2022-09-22 | フォトレジストリムーバ組成物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022151512A Pending JP2022191267A (ja) | 2018-01-25 | 2022-09-22 | フォトレジストリムーバ組成物 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11365379B2 (enExample) |
| EP (1) | EP3743773B1 (enExample) |
| JP (2) | JP7175316B2 (enExample) |
| KR (1) | KR102448220B1 (enExample) |
| CN (1) | CN111512239B (enExample) |
| SG (1) | SG11202004420QA (enExample) |
| TW (1) | TWI838356B (enExample) |
| WO (1) | WO2019145312A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102691177B1 (ko) * | 2018-01-25 | 2024-08-01 | 메르크 파텐트 게엠베하 | 포토레지스트 리무버 조성물 |
| KR102448220B1 (ko) | 2018-01-25 | 2022-09-27 | 메르크 파텐트 게엠베하 | 포토레지스트 제거제 조성물 |
| CN115820344B (zh) * | 2022-12-05 | 2024-06-18 | 四川大学 | 一种环保型强酸性化学清洗剂及其应用 |
| KR102781373B1 (ko) * | 2023-01-17 | 2025-03-17 | 재원산업 주식회사 | 전착도장용 현상액 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006011433A (ja) | 2004-06-21 | 2006-01-12 | Dongjin Semichem Co Ltd | レジスト除去用組成物 |
| JP2010002580A (ja) | 2008-06-19 | 2010-01-07 | Tosoh Corp | レジスト剥離液 |
Family Cites Families (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2455076A1 (fr) | 1979-04-24 | 1980-11-21 | Rhone Poulenc Ind | Composition pour l'elimination des resines photoresistantes |
| US4971715A (en) | 1988-11-18 | 1990-11-20 | International Business Machines Corporation | Phenolic-free stripping composition and use thereof |
| US5885901A (en) | 1994-08-11 | 1999-03-23 | Texas Instruments Incorporated | Rinsing solution after resist stripping process and method for manufacturing semiconductor device |
| US6323168B1 (en) | 1996-07-03 | 2001-11-27 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
| JPH1055993A (ja) | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
| US6231677B1 (en) | 1998-02-27 | 2001-05-15 | Kanto Kagaku Kabushiki Kaisha | Photoresist stripping liquid composition |
| KR100538501B1 (ko) * | 1999-08-16 | 2005-12-23 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 신규한 오늄염, 레지스트 재료용 광산발생제, 레지스트재료 및 패턴 형성 방법 |
| US6486108B1 (en) | 2000-05-31 | 2002-11-26 | Micron Technology, Inc. | Cleaning composition useful in semiconductor integrated circuit fabrication |
| US6576394B1 (en) | 2000-06-16 | 2003-06-10 | Clariant Finance (Bvi) Limited | Negative-acting chemically amplified photoresist composition |
| US6699825B2 (en) | 2001-01-12 | 2004-03-02 | S.C. Johnson & Son, Inc. | Acidic hard-surface antimicrobial cleaner |
| US6551973B1 (en) | 2001-10-09 | 2003-04-22 | General Chemical Corporation | Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue |
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| JP4825405B2 (ja) * | 2003-05-08 | 2011-11-30 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | フォトレジスト組成物およびそれらの調製方法 |
| JP4776191B2 (ja) | 2004-08-25 | 2011-09-21 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法 |
| JP5031200B2 (ja) * | 2005-06-10 | 2012-09-19 | 花王株式会社 | 洗濯前処理剤組成物 |
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| KR20070074746A (ko) * | 2006-01-10 | 2007-07-18 | 주식회사 동진쎄미켐 | 레지스트 제거용 조성물 |
| JP2007254555A (ja) * | 2006-03-22 | 2007-10-04 | Sanyo Chem Ind Ltd | 洗浄剤組成物 |
| US7601482B2 (en) | 2006-03-28 | 2009-10-13 | Az Electronic Materials Usa Corp. | Negative photoresist compositions |
| US8288330B2 (en) | 2006-05-26 | 2012-10-16 | Air Products And Chemicals, Inc. | Composition and method for photoresist removal |
| WO2008121952A1 (en) | 2007-03-31 | 2008-10-09 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
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| WO2008152907A1 (ja) * | 2007-06-12 | 2008-12-18 | Toagosei Co., Ltd. | 導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板 |
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| KR101846597B1 (ko) * | 2010-10-01 | 2018-04-06 | 미쯔비시 케미컬 주식회사 | 반도체 디바이스용 기판의 세정액 및 세정 방법 |
| KR101868319B1 (ko) | 2010-10-06 | 2018-06-15 | 엔테그리스, 아이엔씨. | 질화 금속을 선택적으로 에칭하기 위한 조성물 및 방법 |
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| US9090859B2 (en) | 2012-03-27 | 2015-07-28 | Sachem, Inc. | Quaternary ammonium hydroxides |
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| CN103336412B (zh) * | 2013-07-03 | 2017-02-08 | 北京科华微电子材料有限公司 | 一种新型的光刻胶剥离液及其应用工艺 |
| CN115368982A (zh) * | 2014-06-04 | 2022-11-22 | 恩特格里斯公司 | 具有金属、电介质及氮化物兼容性的抗反射涂层清洗及蚀刻后残留物去除组成物 |
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| TWI752903B (zh) * | 2015-03-12 | 2022-01-21 | 德商馬克專利公司 | 在低pKa驅動之聚合物剝離期間促進電荷錯合銅之保護的組合物及方法 |
| US10696932B2 (en) * | 2015-08-03 | 2020-06-30 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning composition |
| US10319605B2 (en) * | 2016-05-10 | 2019-06-11 | Jsr Corporation | Semiconductor treatment composition and treatment method |
| KR102434147B1 (ko) * | 2016-10-06 | 2022-08-19 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 반도체 기판상의 잔류물을 제거하기 위한 세정 제형 |
| EP3580321B1 (en) * | 2017-02-10 | 2024-12-25 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulations |
| CN110475845B (zh) * | 2017-03-24 | 2022-02-25 | 富士胶片电子材料美国有限公司 | 用于移除半导体基板上的残余物的清洁组合物 |
| KR102448220B1 (ko) | 2018-01-25 | 2022-09-27 | 메르크 파텐트 게엠베하 | 포토레지스트 제거제 조성물 |
-
2019
- 2019-01-23 KR KR1020207024408A patent/KR102448220B1/ko active Active
- 2019-01-23 WO PCT/EP2019/051534 patent/WO2019145312A1/en not_active Ceased
- 2019-01-23 JP JP2020539825A patent/JP7175316B2/ja active Active
- 2019-01-23 SG SG11202004420QA patent/SG11202004420QA/en unknown
- 2019-01-23 US US16/961,821 patent/US11365379B2/en active Active
- 2019-01-23 TW TW108102463A patent/TWI838356B/zh active
- 2019-01-23 CN CN201980006788.8A patent/CN111512239B/zh active Active
- 2019-01-23 EP EP19701617.3A patent/EP3743773B1/en active Active
-
2022
- 2022-09-22 JP JP2022151512A patent/JP2022191267A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006011433A (ja) | 2004-06-21 | 2006-01-12 | Dongjin Semichem Co Ltd | レジスト除去用組成物 |
| JP2010002580A (ja) | 2008-06-19 | 2010-01-07 | Tosoh Corp | レジスト剥離液 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20210115362A1 (en) | 2021-04-22 |
| TW201934736A (zh) | 2019-09-01 |
| JP2022191267A (ja) | 2022-12-27 |
| EP3743773A1 (en) | 2020-12-02 |
| JP2021511419A (ja) | 2021-05-06 |
| CN111512239B (zh) | 2024-05-03 |
| US11365379B2 (en) | 2022-06-21 |
| KR20200110429A (ko) | 2020-09-23 |
| KR102448220B1 (ko) | 2022-09-27 |
| TWI838356B (zh) | 2024-04-11 |
| WO2019145312A1 (en) | 2019-08-01 |
| CN111512239A (zh) | 2020-08-07 |
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