JP2006011433A - レジスト除去用組成物 - Google Patents
レジスト除去用組成物 Download PDFInfo
- Publication number
- JP2006011433A JP2006011433A JP2005178090A JP2005178090A JP2006011433A JP 2006011433 A JP2006011433 A JP 2006011433A JP 2005178090 A JP2005178090 A JP 2005178090A JP 2005178090 A JP2005178090 A JP 2005178090A JP 2006011433 A JP2006011433 A JP 2006011433A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- composition
- carbonate
- alkylene carbonate
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 83
- -1 alkylene carbonate Chemical compound 0.000 claims abstract description 55
- 150000003512 tertiary amines Chemical class 0.000 claims abstract description 41
- 239000007800 oxidant agent Substances 0.000 claims abstract description 32
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 25
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- ZZXUZKXVROWEIF-UHFFFAOYSA-N 1,2-butylene carbonate Chemical compound CCC1COC(=O)O1 ZZXUZKXVROWEIF-UHFFFAOYSA-N 0.000 claims description 6
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 claims description 6
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 6
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 5
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims description 4
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- 150000001735 carboxylic acids Chemical class 0.000 claims description 4
- 229960002887 deanol Drugs 0.000 claims description 4
- 150000001991 dicarboxylic acids Chemical class 0.000 claims description 4
- 239000012972 dimethylethanolamine Substances 0.000 claims description 4
- QHTUMQYGZQYEOZ-UHFFFAOYSA-N 2-(4-methylpiperazin-1-yl)ethanol Chemical compound CN1CCN(CCO)CC1 QHTUMQYGZQYEOZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims 2
- 150000007513 acids Chemical class 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 14
- 239000000126 substance Substances 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 23
- 239000000758 substrate Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 17
- 239000000843 powder Substances 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000499 gel Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 150000003335 secondary amines Chemical class 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 150000003141 primary amines Chemical class 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VTIRNZBEJBPYCV-UHFFFAOYSA-N 1-hydrazinylethanol Chemical compound CC(O)NN VTIRNZBEJBPYCV-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229920006125 amorphous polymer Polymers 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 125000004954 trialkylamino group Chemical group 0.000 description 1
- JSPLKZUTYZBBKA-UHFFFAOYSA-N trioxidane Chemical compound OOO JSPLKZUTYZBBKA-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/52—Carboxylic amides, alkylolamides or imides or their condensation products with alkylene oxides
- C11D1/526—Carboxylic amides (R1-CO-NR2R3), where R1, R2 or R3 are polyalkoxylated
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C11D2111/22—
Abstract
【解決手段】本発明によるレジスト除去用組成物は、電子回路または表示素子の金属配線をパターン化するレジストの除去用組成物に関し、前記レジスト除去用組成物は、アルキレンカーボネート、および3級アミンおよび酸化剤のうちの少なくともいずれか一つを含む。
【選択図】なし
Description
Claims (16)
- アルキレンカーボネートを含む、レジスト除去用組成物。
- 前記組成物は、アルキレンカーボネートを100重量%含む、請求項1に記載のレジスト除去用組成物。
- 前記アルキレンカーボネートは、エチレンカーボネート、プロピレンカーボネート、およびブチレンカーボネートからなる群から1種以上選択される、請求項1に記載のレジスト除去用組成物。
- アルキレンカーボネートおよび3級アミンを含む、レジスト除去用組成物。
- 前記組成物は、組成物全体に対してアルキレンカーボネート70〜99重量%および3級アミン1〜30重量%を含む、請求項4に記載のレジスト除去用組成物。
- 前記アルキレンカーボネートは、エチレンカーボネート、プロピレンカーボネート、およびブチレンカーボネートからなる群から1種以上選択される、請求項4に記載のレジスト除去用組成物。
- 前記3級アミンは、トリエタノールアミン、メチルジエタノールアミン、ジエチルエタノールアミン、ジメチルエタノールアミン、1−(2−ヒドロキシエチル)−4−メチルピペラジン、およびN−メチル−(N,N−ジメチルアミノエチル)−アミノエタノールからなる群から1種以上選択される、請求項4に記載のレジスト除去用組成物。
- アルキレンカーボネートおよび酸化剤を含む、レジスト除去用組成物。
- 前記組成物は、組成物全体に対してアルキレンカーボネート90〜99.99重量%および酸化剤0.01〜10重量%を含む、請求項8に記載のレジスト除去用組成物。
- 前記アルキレンカーボネートは、エチレンカーボネート、プロピレンカーボネート、およびブチレンカーボネートからなる群から1種以上選択される、請求項8に記載のレジスト除去用組成物。
- 前記酸化剤は、過酸化水素、オゾン、アルキルベンゼンスルホン酸類、カルボン酸類、およびジカルボン酸類からなる群から1種以上選択される、請求項8に記載のレジスト除去用組成物。
- アルキレンカーボネート、3級アミン、および酸化剤を含む、レジスト除去用組成物。
- 前記組成物は、組成物全体に対してアルキレンカーボネート90〜98.99重量%、3級アミン1〜30重量%、酸化剤0.01〜10重量%を含む、請求項12に記載のレジスト除去用組成物。
- 前記アルキレンカーボネートは、エチレンカーボネート、プロピレンカーボネート、およびブチレンカーボネートからなる群から1種以上選択される、請求項12に記載のレジスト除去用組成物。
- 前記3級アミンは、トリエタノールアミン、メチルジエタノールアミン、ジエチルエタノールアミン、ジメチルエタノールアミン、1−(2−ヒドロキシエチル)−4−メチルピペラジン、およびN−メチル−(N,N−ジメチルアミノエチル)−アミノエタノールからなる群から1種以上選択される、請求項12に記載のレジスト除去用組成物。
- 前記酸化剤は、過酸化水素、オゾン、アルキルベンゼンスルホン酸類、カルボン酸類、およびジカルボキシル酸類からなる群から1種以上選択される、請求項12に記載のレジスト除去用組成物。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040046031A KR20050120914A (ko) | 2004-06-21 | 2004-06-21 | 레지스트 제거용 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006011433A true JP2006011433A (ja) | 2006-01-12 |
JP4632872B2 JP4632872B2 (ja) | 2011-02-16 |
Family
ID=35718734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005178090A Expired - Fee Related JP4632872B2 (ja) | 2004-06-21 | 2005-06-17 | レジスト除去用組成物 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4632872B2 (ja) |
KR (1) | KR20050120914A (ja) |
CN (1) | CN1713077B (ja) |
TW (1) | TW200613933A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008152907A1 (ja) * | 2007-06-12 | 2008-12-18 | Toagosei Co., Ltd. | 導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板 |
JP2010535416A (ja) * | 2007-08-01 | 2010-11-18 | アプライド マテリアルズ インコーポレイテッド | 電子デバイス基板表面からの有機含有材料のストリッピングと除去 |
JP2012094703A (ja) * | 2010-10-27 | 2012-05-17 | Fujifilm Corp | 多剤型半導体基板用洗浄剤、それを用いた洗浄方法及び半導体素子の製造方法 |
WO2019145311A1 (en) * | 2018-01-25 | 2019-08-01 | Merck Patent Gmbh | Photoresist remover compositions |
JP2021511419A (ja) * | 2018-01-25 | 2021-05-06 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | フォトレジストリムーバ組成物 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101257409B1 (ko) * | 2006-01-10 | 2013-04-23 | 주식회사 동진쎄미켐 | 레지스트 제거용 조성물 |
Citations (3)
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JP2003203856A (ja) * | 2001-10-23 | 2003-07-18 | Ums:Kk | 有機被膜の除去方法 |
JP2003282518A (ja) * | 2002-03-25 | 2003-10-03 | Pyuarekkusu:Kk | 有機被膜の除去方法および除去剤 |
JP2003305418A (ja) * | 2002-04-11 | 2003-10-28 | Ums:Kk | 基体表面の有機被膜の除去装置 |
Family Cites Families (6)
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---|---|---|---|---|
CA2290536C (en) * | 1997-05-23 | 2008-07-22 | Huntsman Petrochemical Corporation | Paint and coating remover |
JPH11282176A (ja) * | 1998-03-26 | 1999-10-15 | Toray Fine Chemical Kk | フォトレジスト剥離用組成物 |
JPH1116882A (ja) * | 1997-06-19 | 1999-01-22 | Toray Fine Chem Co Ltd | フォトレジスト剥離用組成物 |
KR19990007139A (ko) * | 1997-06-19 | 1999-01-25 | 이시하라 고로 | 포토레지스트 박리용 조성물 |
AU3360399A (en) * | 1998-03-30 | 1999-10-18 | Leisa B. Davenhall | Composition and method for removing photoresist materials from electronic components |
JP3914842B2 (ja) * | 2001-10-23 | 2007-05-16 | 有限会社ユーエムエス | 有機被膜の除去方法および除去装置 |
-
2004
- 2004-06-21 KR KR1020040046031A patent/KR20050120914A/ko not_active Application Discontinuation
-
2005
- 2005-06-17 JP JP2005178090A patent/JP4632872B2/ja not_active Expired - Fee Related
- 2005-06-21 CN CN200510077285XA patent/CN1713077B/zh not_active Expired - Fee Related
- 2005-06-21 TW TW094120519A patent/TW200613933A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003203856A (ja) * | 2001-10-23 | 2003-07-18 | Ums:Kk | 有機被膜の除去方法 |
JP2003282518A (ja) * | 2002-03-25 | 2003-10-03 | Pyuarekkusu:Kk | 有機被膜の除去方法および除去剤 |
JP2003305418A (ja) * | 2002-04-11 | 2003-10-28 | Ums:Kk | 基体表面の有機被膜の除去装置 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008152907A1 (ja) * | 2007-06-12 | 2008-12-18 | Toagosei Co., Ltd. | 導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板 |
JPWO2008152907A1 (ja) * | 2007-06-12 | 2010-08-26 | 東亞合成株式会社 | 導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板 |
JP2010535416A (ja) * | 2007-08-01 | 2010-11-18 | アプライド マテリアルズ インコーポレイテッド | 電子デバイス基板表面からの有機含有材料のストリッピングと除去 |
JP2012094703A (ja) * | 2010-10-27 | 2012-05-17 | Fujifilm Corp | 多剤型半導体基板用洗浄剤、それを用いた洗浄方法及び半導体素子の製造方法 |
WO2019145311A1 (en) * | 2018-01-25 | 2019-08-01 | Merck Patent Gmbh | Photoresist remover compositions |
JP2021511531A (ja) * | 2018-01-25 | 2021-05-06 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | フォトレジストリムーバ組成物 |
JP2021511419A (ja) * | 2018-01-25 | 2021-05-06 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | フォトレジストリムーバ組成物 |
US11365379B2 (en) | 2018-01-25 | 2022-06-21 | Merck Patent Gmbh | Photoresist remover compositions |
US11366392B2 (en) | 2018-01-25 | 2022-06-21 | Merck Patent Gmbh | Photoresist remover compositions |
JP7175316B2 (ja) | 2018-01-25 | 2022-11-18 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | フォトレジストリムーバ組成物 |
JP7377206B2 (ja) | 2018-01-25 | 2023-11-09 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | フォトレジストリムーバ組成物 |
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CN1713077B (zh) | 2010-12-22 |
TW200613933A (en) | 2006-05-01 |
CN1713077A (zh) | 2005-12-28 |
KR20050120914A (ko) | 2005-12-26 |
JP4632872B2 (ja) | 2011-02-16 |
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