WO2008152907A1 - 導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板 - Google Patents

導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板 Download PDF

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Publication number
WO2008152907A1
WO2008152907A1 PCT/JP2008/059706 JP2008059706W WO2008152907A1 WO 2008152907 A1 WO2008152907 A1 WO 2008152907A1 JP 2008059706 W JP2008059706 W JP 2008059706W WO 2008152907 A1 WO2008152907 A1 WO 2008152907A1
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WO
WIPO (PCT)
Prior art keywords
electroconductive polymer
resist film
stripping
agent
stripping resist
Prior art date
Application number
PCT/JP2008/059706
Other languages
English (en)
French (fr)
Inventor
Takashi Ihara
Original Assignee
Toagosei Co., Ltd.
Tsurumi Soda Co., Ltd.
Nagase Chemtex Corporation
Nagase & Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toagosei Co., Ltd., Tsurumi Soda Co., Ltd., Nagase Chemtex Corporation, Nagase & Co., Ltd. filed Critical Toagosei Co., Ltd.
Priority to US12/663,142 priority Critical patent/US20100183853A1/en
Priority to JP2009519214A priority patent/JPWO2008152907A1/ja
Priority to CN200880020064.0A priority patent/CN101681131A/zh
Publication of WO2008152907A1 publication Critical patent/WO2008152907A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

　本発明の目的は、導電性高分子よりレジスト膜を剥離するに際し、剥離性が優れるのみならず、導電性高分子に悪影響を与えない剥離剤、および、導電性高分子上のレジスト膜の剥離方法を提供することである。さらに、導電性が良好である、パターニングした導電性高分子を有する基板を提供することである。 　本発明の導電性高分子上のレジスト膜の剥離剤は、ジアルキルスルホン類、ジアルキルスルホキシド類、炭酸アルキレン類、および、アルキロラクトン類よりなる群から選択され、窒素原子を含有しない非プロトン性有機溶剤（ａ）、並びに、化学構造中に窒素原子を有し、かつ、第一級アミン化合物、第二級アミン化合物および有機第四アンモニウム塩以外の有機溶剤（ｂ）よりなる群から選択された少なくとも１つの有機溶剤を含むことを特徴とする。
PCT/JP2008/059706 2007-06-12 2008-05-27 導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板 WO2008152907A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/663,142 US20100183853A1 (en) 2007-06-12 2008-05-27 Stripping agent for resist film on/above conductive polymer, method for stripping resist film, and substrate having patterned conductive polymer
JP2009519214A JPWO2008152907A1 (ja) 2007-06-12 2008-05-27 導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板
CN200880020064.0A CN101681131A (zh) 2007-06-12 2008-05-27 导电性高分子上的抗蚀剂膜的剥离剂、抗蚀剂膜的剥离方法及具有已图案化的导电性高分子的基板

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-155529 2007-06-12
JP2007155529 2007-06-12
JP2007317796 2007-12-10
JP2007-317796 2007-12-10

Publications (1)

Publication Number Publication Date
WO2008152907A1 true WO2008152907A1 (ja) 2008-12-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059706 WO2008152907A1 (ja) 2007-06-12 2008-05-27 導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板

Country Status (6)

Country Link
US (1) US20100183853A1 (ja)
JP (1) JPWO2008152907A1 (ja)
KR (1) KR20100046139A (ja)
CN (1) CN101681131A (ja)
TW (1) TW200905421A (ja)
WO (1) WO2008152907A1 (ja)

Cited By (8)

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JP2009258211A (ja) * 2008-04-14 2009-11-05 Toagosei Co Ltd 導電性高分子膜上のレジスト被膜の除去方法および除去装置
WO2010013642A1 (ja) * 2008-07-29 2010-02-04 東亞合成株式会社 導電性高分子のパターン形成方法
JP2010152154A (ja) * 2008-12-25 2010-07-08 Tokyo Ohka Kogyo Co Ltd 被エッチング基体の製造方法及び感光性樹脂組成物
JP2010161013A (ja) * 2009-01-09 2010-07-22 Toagosei Co Ltd 導電性樹脂パターンを有する積層体の製造方法、および、積層体
WO2013133668A1 (ko) * 2012-03-09 2013-09-12 에스케이씨 주식회사 전극 기판, 이를 포함하는 입력 장치 및 표시 장치, 및 이의 제조방법
WO2014002151A1 (ja) * 2012-06-26 2014-01-03 野村マイクロ・サイエンス株式会社 レジスト剥離剤
US8895227B2 (en) 2010-01-25 2014-11-25 Toagosei Co., Ltd. Developing solution for photoresist on substrate including conductive polymer, and method for forming pattern
US10766973B2 (en) 2015-06-22 2020-09-08 Maruzen Petrochemical Co., Ltd. Method for producing polymer for electronic material and polymer for electronic material obtained by the production method

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JP4811520B2 (ja) * 2009-02-20 2011-11-09 住友金属鉱山株式会社 半導体装置用基板の製造方法、半導体装置の製造方法、半導体装置用基板及び半導体装置
WO2011008436A2 (en) * 2009-07-13 2011-01-20 Applied Materials, Inc. Method for removing implanted photo resist from hard disk drive substrates
TWI410758B (zh) * 2010-11-11 2013-10-01 Kanto Ppc Inc A barrier removal fluid composition, and a method of removing the barrier layer
US8492208B1 (en) 2012-01-05 2013-07-23 International Business Machines Corporation Compressive (PFET) and tensile (NFET) channel strain in nanowire FETs fabricated with a replacement gate process
CN103293881B (zh) * 2013-05-24 2015-11-25 京东方科技集团股份有限公司 一种显影液组成物在制备彩色滤光片中的应用
CN103789780B (zh) * 2014-02-26 2016-06-08 苏州禾川化学技术服务有限公司 一种ic元件用碱性通用型去毛刺液
JP6541460B2 (ja) * 2015-06-24 2019-07-10 東京応化工業株式会社 パターン形成方法
WO2022232751A1 (en) * 2021-04-30 2022-11-03 Versum Materials Us, Llc Compositions for removing a photoresist from a substrate and uses thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009258211A (ja) * 2008-04-14 2009-11-05 Toagosei Co Ltd 導電性高分子膜上のレジスト被膜の除去方法および除去装置
WO2010013642A1 (ja) * 2008-07-29 2010-02-04 東亞合成株式会社 導電性高分子のパターン形成方法
JP2010152154A (ja) * 2008-12-25 2010-07-08 Tokyo Ohka Kogyo Co Ltd 被エッチング基体の製造方法及び感光性樹脂組成物
JP2010161013A (ja) * 2009-01-09 2010-07-22 Toagosei Co Ltd 導電性樹脂パターンを有する積層体の製造方法、および、積層体
US8895227B2 (en) 2010-01-25 2014-11-25 Toagosei Co., Ltd. Developing solution for photoresist on substrate including conductive polymer, and method for forming pattern
WO2013133668A1 (ko) * 2012-03-09 2013-09-12 에스케이씨 주식회사 전극 기판, 이를 포함하는 입력 장치 및 표시 장치, 및 이의 제조방법
WO2014002151A1 (ja) * 2012-06-26 2014-01-03 野村マイクロ・サイエンス株式会社 レジスト剥離剤
TWI572999B (zh) * 2012-06-26 2017-03-01 Nomura Micro Science Kk Photoresist stripping agent
US10766973B2 (en) 2015-06-22 2020-09-08 Maruzen Petrochemical Co., Ltd. Method for producing polymer for electronic material and polymer for electronic material obtained by the production method

Also Published As

Publication number Publication date
US20100183853A1 (en) 2010-07-22
JPWO2008152907A1 (ja) 2010-08-26
CN101681131A (zh) 2010-03-24
KR20100046139A (ko) 2010-05-06
TW200905421A (en) 2009-02-01

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