JP2021511419A5 - - Google Patents
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- Publication number
- JP2021511419A5 JP2021511419A5 JP2020539825A JP2020539825A JP2021511419A5 JP 2021511419 A5 JP2021511419 A5 JP 2021511419A5 JP 2020539825 A JP2020539825 A JP 2020539825A JP 2020539825 A JP2020539825 A JP 2020539825A JP 2021511419 A5 JP2021511419 A5 JP 2021511419A5
- Authority
- JP
- Japan
- Prior art keywords
- organic solvent
- solvent component
- alternatively
- mixture
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003960 organic solvent Substances 0.000 claims description 175
- 239000000203 mixture Substances 0.000 claims description 160
- 239000002904 solvent Substances 0.000 claims description 50
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 38
- 150000004996 alkyl benzenes Chemical class 0.000 claims description 18
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000004094 surface-active agent Substances 0.000 claims description 11
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 229940092714 benzenesulfonic acid Drugs 0.000 claims description 9
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 claims description 8
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims description 6
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 125000006702 (C1-C18) alkyl group Chemical group 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000007654 immersion Methods 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 125000006850 spacer group Chemical group 0.000 claims description 2
- 125000004400 (C1-C12) alkyl group Chemical group 0.000 claims 1
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 2
- XTUSEBKMEQERQV-UHFFFAOYSA-N propan-2-ol;hydrate Chemical compound O.CC(C)O XTUSEBKMEQERQV-UHFFFAOYSA-N 0.000 description 1
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022151512A JP2022191267A (ja) | 2018-01-25 | 2022-09-22 | フォトレジストリムーバ組成物 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862621760P | 2018-01-25 | 2018-01-25 | |
| US62/621,760 | 2018-01-25 | ||
| PCT/EP2019/051534 WO2019145312A1 (en) | 2018-01-25 | 2019-01-23 | Photoresist remover compositions |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022151512A Division JP2022191267A (ja) | 2018-01-25 | 2022-09-22 | フォトレジストリムーバ組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021511419A JP2021511419A (ja) | 2021-05-06 |
| JP2021511419A5 true JP2021511419A5 (enExample) | 2022-01-11 |
| JP7175316B2 JP7175316B2 (ja) | 2022-11-18 |
Family
ID=65228539
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020539825A Active JP7175316B2 (ja) | 2018-01-25 | 2019-01-23 | フォトレジストリムーバ組成物 |
| JP2022151512A Pending JP2022191267A (ja) | 2018-01-25 | 2022-09-22 | フォトレジストリムーバ組成物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022151512A Pending JP2022191267A (ja) | 2018-01-25 | 2022-09-22 | フォトレジストリムーバ組成物 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11365379B2 (enExample) |
| EP (1) | EP3743773B1 (enExample) |
| JP (2) | JP7175316B2 (enExample) |
| KR (1) | KR102448220B1 (enExample) |
| CN (1) | CN111512239B (enExample) |
| SG (1) | SG11202004420QA (enExample) |
| TW (1) | TWI838356B (enExample) |
| WO (1) | WO2019145312A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11365379B2 (en) | 2018-01-25 | 2022-06-21 | Merck Patent Gmbh | Photoresist remover compositions |
| KR102691177B1 (ko) * | 2018-01-25 | 2024-08-01 | 메르크 파텐트 게엠베하 | 포토레지스트 리무버 조성물 |
| CN115820344B (zh) * | 2022-12-05 | 2024-06-18 | 四川大学 | 一种环保型强酸性化学清洗剂及其应用 |
| KR102781373B1 (ko) * | 2023-01-17 | 2025-03-17 | 재원산업 주식회사 | 전착도장용 현상액 |
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| FR2455076A1 (fr) | 1979-04-24 | 1980-11-21 | Rhone Poulenc Ind | Composition pour l'elimination des resines photoresistantes |
| US4971715A (en) * | 1988-11-18 | 1990-11-20 | International Business Machines Corporation | Phenolic-free stripping composition and use thereof |
| US5885901A (en) | 1994-08-11 | 1999-03-23 | Texas Instruments Incorporated | Rinsing solution after resist stripping process and method for manufacturing semiconductor device |
| US6323168B1 (en) * | 1996-07-03 | 2001-11-27 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
| JPH1055993A (ja) | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
| US6231677B1 (en) * | 1998-02-27 | 2001-05-15 | Kanto Kagaku Kabushiki Kaisha | Photoresist stripping liquid composition |
| KR100538501B1 (ko) * | 1999-08-16 | 2005-12-23 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 신규한 오늄염, 레지스트 재료용 광산발생제, 레지스트재료 및 패턴 형성 방법 |
| US6486108B1 (en) | 2000-05-31 | 2002-11-26 | Micron Technology, Inc. | Cleaning composition useful in semiconductor integrated circuit fabrication |
| US6576394B1 (en) | 2000-06-16 | 2003-06-10 | Clariant Finance (Bvi) Limited | Negative-acting chemically amplified photoresist composition |
| US6699825B2 (en) | 2001-01-12 | 2004-03-02 | S.C. Johnson & Son, Inc. | Acidic hard-surface antimicrobial cleaner |
| US6551973B1 (en) | 2001-10-09 | 2003-04-22 | General Chemical Corporation | Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue |
| JP3787085B2 (ja) | 2001-12-04 | 2006-06-21 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
| JP4825405B2 (ja) * | 2003-05-08 | 2011-11-30 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | フォトレジスト組成物およびそれらの調製方法 |
| KR20050120914A (ko) * | 2004-06-21 | 2005-12-26 | 주식회사 동진쎄미켐 | 레지스트 제거용 조성물 |
| JP4776191B2 (ja) | 2004-08-25 | 2011-09-21 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法 |
| JP5031200B2 (ja) * | 2005-06-10 | 2012-09-19 | 花王株式会社 | 洗濯前処理剤組成物 |
| US7700533B2 (en) * | 2005-06-23 | 2010-04-20 | Air Products And Chemicals, Inc. | Composition for removal of residue comprising cationic salts and methods using same |
| KR20070074746A (ko) * | 2006-01-10 | 2007-07-18 | 주식회사 동진쎄미켐 | 레지스트 제거용 조성물 |
| JP2007254555A (ja) * | 2006-03-22 | 2007-10-04 | Sanyo Chem Ind Ltd | 洗浄剤組成物 |
| US7601482B2 (en) | 2006-03-28 | 2009-10-13 | Az Electronic Materials Usa Corp. | Negative photoresist compositions |
| US8288330B2 (en) * | 2006-05-26 | 2012-10-16 | Air Products And Chemicals, Inc. | Composition and method for photoresist removal |
| US20100112728A1 (en) | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
| JP2010524208A (ja) | 2007-03-31 | 2010-07-15 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | ウエハ再生のために材料を剥離する方法 |
| US20100183853A1 (en) * | 2007-06-12 | 2010-07-22 | Takashi Ihara | Stripping agent for resist film on/above conductive polymer, method for stripping resist film, and substrate having patterned conductive polymer |
| WO2009058278A1 (en) | 2007-10-29 | 2009-05-07 | Ekc Technology, Inc | Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions |
| EP2219882A4 (en) | 2007-11-16 | 2011-11-23 | Ekc Technology Inc | COMPOSITIONS FOR REMOVING METAL HARD MASK REST OF A SEMICONDUCTOR SUBSTRATE |
| JP5195063B2 (ja) | 2008-06-19 | 2013-05-08 | 東ソー株式会社 | レジスト剥離液 |
| CN102217042A (zh) | 2008-10-02 | 2011-10-12 | 高级技术材料公司 | 表面活性剂/消泡剂混合物用于增强硅基板的金属负载及表面钝化的应用 |
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| JP6014985B2 (ja) * | 2010-10-01 | 2016-10-26 | 三菱化学株式会社 | 半導体デバイス用基板洗浄液及び洗浄方法 |
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| CN108026491B (zh) * | 2015-08-03 | 2021-08-13 | 富士胶片电子材料美国有限公司 | 清洁组合物 |
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| US10626353B2 (en) * | 2017-02-10 | 2020-04-21 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulations |
| SG11201908616PA (en) * | 2017-03-24 | 2019-10-30 | Fujifilm Electronic Materials Usa Inc | Cleaning compositions for removing residues on semiconductor substrates |
| US11365379B2 (en) | 2018-01-25 | 2022-06-21 | Merck Patent Gmbh | Photoresist remover compositions |
-
2019
- 2019-01-23 US US16/961,821 patent/US11365379B2/en active Active
- 2019-01-23 KR KR1020207024408A patent/KR102448220B1/ko active Active
- 2019-01-23 WO PCT/EP2019/051534 patent/WO2019145312A1/en not_active Ceased
- 2019-01-23 JP JP2020539825A patent/JP7175316B2/ja active Active
- 2019-01-23 EP EP19701617.3A patent/EP3743773B1/en active Active
- 2019-01-23 CN CN201980006788.8A patent/CN111512239B/zh active Active
- 2019-01-23 TW TW108102463A patent/TWI838356B/zh active
- 2019-01-23 SG SG11202004420QA patent/SG11202004420QA/en unknown
-
2022
- 2022-09-22 JP JP2022151512A patent/JP2022191267A/ja active Pending
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