KR102448220B1 - 포토레지스트 제거제 조성물 - Google Patents

포토레지스트 제거제 조성물 Download PDF

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Publication number
KR102448220B1
KR102448220B1 KR1020207024408A KR20207024408A KR102448220B1 KR 102448220 B1 KR102448220 B1 KR 102448220B1 KR 1020207024408 A KR1020207024408 A KR 1020207024408A KR 20207024408 A KR20207024408 A KR 20207024408A KR 102448220 B1 KR102448220 B1 KR 102448220B1
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organic solvent
delete delete
solvent component
component
mixture
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KR20200110429A (ko
Inventor
로버트 애렌트
헹펭 우
구안양 린
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메르크 파텐트 게엠베하
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Classifications

    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2068Ethers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02Anionic compounds
    • C11D1/12Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/22Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66Non-ionic compounds
    • C11D1/72Ethers of polyoxyalkylene glycols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66Non-ionic compounds
    • C11D1/72Ethers of polyoxyalkylene glycols
    • C11D1/721End blocked ethers
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66Non-ionic compounds
    • C11D1/83Mixtures of non-ionic with anionic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2075Carboxylic acids-salts thereof
    • C11D3/2082Polycarboxylic acids-salts thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/34Organic compounds containing sulfur
    • C11D3/3454Organic compounds containing sulfur containing sulfone groups, e.g. vinyl sulfones
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43Solvents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/426Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/007Heating the liquid
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020207024408A 2018-01-25 2019-01-23 포토레지스트 제거제 조성물 Active KR102448220B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862621760P 2018-01-25 2018-01-25
US62/621,760 2018-01-25
PCT/EP2019/051534 WO2019145312A1 (en) 2018-01-25 2019-01-23 Photoresist remover compositions

Publications (2)

Publication Number Publication Date
KR20200110429A KR20200110429A (ko) 2020-09-23
KR102448220B1 true KR102448220B1 (ko) 2022-09-27

Family

ID=65228539

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207024408A Active KR102448220B1 (ko) 2018-01-25 2019-01-23 포토레지스트 제거제 조성물

Country Status (8)

Country Link
US (1) US11365379B2 (enExample)
EP (1) EP3743773B1 (enExample)
JP (2) JP7175316B2 (enExample)
KR (1) KR102448220B1 (enExample)
CN (1) CN111512239B (enExample)
SG (1) SG11202004420QA (enExample)
TW (1) TWI838356B (enExample)
WO (1) WO2019145312A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102691177B1 (ko) * 2018-01-25 2024-08-01 메르크 파텐트 게엠베하 포토레지스트 리무버 조성물
EP3743773B1 (en) 2018-01-25 2022-04-06 Merck Patent GmbH Photoresist remover compositions
CN115820344B (zh) * 2022-12-05 2024-06-18 四川大学 一种环保型强酸性化学清洗剂及其应用
KR102781373B1 (ko) * 2023-01-17 2025-03-17 재원산업 주식회사 전착도장용 현상액

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2455076A1 (fr) 1979-04-24 1980-11-21 Rhone Poulenc Ind Composition pour l'elimination des resines photoresistantes
US4971715A (en) 1988-11-18 1990-11-20 International Business Machines Corporation Phenolic-free stripping composition and use thereof
US5885901A (en) 1994-08-11 1999-03-23 Texas Instruments Incorporated Rinsing solution after resist stripping process and method for manufacturing semiconductor device
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6231677B1 (en) 1998-02-27 2001-05-15 Kanto Kagaku Kabushiki Kaisha Photoresist stripping liquid composition
KR100538501B1 (ko) * 1999-08-16 2005-12-23 신에쓰 가가꾸 고교 가부시끼가이샤 신규한 오늄염, 레지스트 재료용 광산발생제, 레지스트재료 및 패턴 형성 방법
US6486108B1 (en) 2000-05-31 2002-11-26 Micron Technology, Inc. Cleaning composition useful in semiconductor integrated circuit fabrication
US6576394B1 (en) 2000-06-16 2003-06-10 Clariant Finance (Bvi) Limited Negative-acting chemically amplified photoresist composition
US6699825B2 (en) 2001-01-12 2004-03-02 S.C. Johnson & Son, Inc. Acidic hard-surface antimicrobial cleaner
US6551973B1 (en) 2001-10-09 2003-04-22 General Chemical Corporation Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue
JP3787085B2 (ja) 2001-12-04 2006-06-21 関東化学株式会社 フォトレジスト残渣除去液組成物
TWI284783B (en) * 2003-05-08 2007-08-01 Du Pont Photoresist compositions and processes for preparing the same
KR20050120914A (ko) * 2004-06-21 2005-12-26 주식회사 동진쎄미켐 레지스트 제거용 조성물
JP4776191B2 (ja) 2004-08-25 2011-09-21 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法
JP5031200B2 (ja) * 2005-06-10 2012-09-19 花王株式会社 洗濯前処理剤組成物
US7700533B2 (en) * 2005-06-23 2010-04-20 Air Products And Chemicals, Inc. Composition for removal of residue comprising cationic salts and methods using same
KR20070074746A (ko) * 2006-01-10 2007-07-18 주식회사 동진쎄미켐 레지스트 제거용 조성물
JP2007254555A (ja) * 2006-03-22 2007-10-04 Sanyo Chem Ind Ltd 洗浄剤組成物
US7601482B2 (en) 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
US8288330B2 (en) 2006-05-26 2012-10-16 Air Products And Chemicals, Inc. Composition and method for photoresist removal
KR20100015974A (ko) * 2007-03-31 2010-02-12 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 웨이퍼 재생을 위한 물질의 스트리핑 방법
US20100112728A1 (en) 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
KR20100046139A (ko) * 2007-06-12 2010-05-06 도아고세이가부시키가이샤 도전성 고분자 상의 레지스트막의 박리제, 레지스트막의 박리 방법, 및 패터닝한 도전성 고분자를 갖는 기판
US8062429B2 (en) * 2007-10-29 2011-11-22 Ekc Technology, Inc. Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
KR20100082012A (ko) * 2007-11-16 2010-07-15 이케이씨 테크놀로지, 인코포레이티드 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물
JP5195063B2 (ja) 2008-06-19 2013-05-08 東ソー株式会社 レジスト剥離液
EP2342738A4 (en) 2008-10-02 2013-04-17 Advanced Tech Materials USE OF TENSID / DETOINT MIXTURES FOR INCREASED METAL LOADING AND SURFACE PASSIVATION OF SILICON SUBSTRATES
US8754021B2 (en) * 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
JP5657318B2 (ja) * 2010-09-27 2015-01-21 富士フイルム株式会社 半導体基板用洗浄剤、これを利用した洗浄方法及び半導体素子の製造方法
JP6014985B2 (ja) * 2010-10-01 2016-10-26 三菱化学株式会社 半導体デバイス用基板洗浄液及び洗浄方法
SG189292A1 (en) 2010-10-06 2013-05-31 Advanced Tech Materials Composition and process for selectively etching metal nitrides
WO2012154498A2 (en) 2011-05-06 2012-11-15 Advanced Technology Materials, Inc. Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
FR2976290B1 (fr) 2011-06-09 2014-08-15 Jerome Daviot Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques
EP2798669B1 (en) * 2011-12-28 2021-03-31 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
KR102105381B1 (ko) * 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법
US9090859B2 (en) 2012-03-27 2015-07-28 Sachem, Inc. Quaternary ammonium hydroxides
JP6157081B2 (ja) * 2012-09-24 2017-07-05 東京応化工業株式会社 フォトリソグラフィ用剥離液、及びパターン形成方法
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
US20160075971A1 (en) * 2013-04-22 2016-03-17 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
SG10201708364XA (en) * 2013-06-06 2017-11-29 Entegris Inc Compositions and methods for selectively etching titanium nitride
CN103336412B (zh) * 2013-07-03 2017-02-08 北京科华微电子材料有限公司 一种新型的光刻胶剥离液及其应用工艺
WO2015187675A2 (en) * 2014-06-04 2015-12-10 Entegris, Inc. Anti-reflective coating cleaning and post-etch residue removal composition having metal, dielectric and nitride compatibility
CN107155367B (zh) * 2014-06-30 2021-12-21 恩特格里斯公司 利用钨及钴兼容性移除蚀刻后残余物的含水及半含水清洁剂
KR102247235B1 (ko) 2015-01-26 2021-05-03 동우 화인켐 주식회사 티타늄막 식각액 조성물
JP7045190B2 (ja) * 2015-03-12 2022-03-31 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 低pka駆動ポリマーストリップ中の電荷錯体銅保護を促進する組成物および方法
KR102637508B1 (ko) * 2015-08-03 2024-02-15 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 세정 조성물
US10319605B2 (en) * 2016-05-10 2019-06-11 Jsr Corporation Semiconductor treatment composition and treatment method
WO2018067763A1 (en) * 2016-10-06 2018-04-12 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulations for removing residues on semiconductor substrates
CN110249041A (zh) * 2017-02-10 2019-09-17 富士胶片电子材料美国有限公司 清洗制剂
WO2018175222A1 (en) * 2017-03-24 2018-09-27 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions for removing residues on semiconductor substrates
EP3743773B1 (en) 2018-01-25 2022-04-06 Merck Patent GmbH Photoresist remover compositions

Also Published As

Publication number Publication date
EP3743773A1 (en) 2020-12-02
CN111512239B (zh) 2024-05-03
KR20200110429A (ko) 2020-09-23
JP2022191267A (ja) 2022-12-27
EP3743773B1 (en) 2022-04-06
JP7175316B2 (ja) 2022-11-18
CN111512239A (zh) 2020-08-07
TW201934736A (zh) 2019-09-01
WO2019145312A1 (en) 2019-08-01
TWI838356B (zh) 2024-04-11
SG11202004420QA (en) 2020-06-29
US20210115362A1 (en) 2021-04-22
JP2021511419A (ja) 2021-05-06
US11365379B2 (en) 2022-06-21

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