JP7083256B2 - 半導体モジュール及びその製造方法 - Google Patents
半導体モジュール及びその製造方法 Download PDFInfo
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- JP7083256B2 JP7083256B2 JP2018027138A JP2018027138A JP7083256B2 JP 7083256 B2 JP7083256 B2 JP 7083256B2 JP 2018027138 A JP2018027138 A JP 2018027138A JP 2018027138 A JP2018027138 A JP 2018027138A JP 7083256 B2 JP7083256 B2 JP 7083256B2
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Description
絶縁性基板と、
該絶縁性基板上に形成された回路パターンと、
該回路パターン上に接合された半導体素子と、
前記絶縁性基板、前記回路パターン及び前記半導体素子を封止する封止樹脂とを備えた半導体モジュールにおいて、
前記絶縁性基板と前記封止樹脂とが密着した部分における前記絶縁性基板の表面は、前記絶縁性基板の断面において、下記方法によって測定し算出した、幅300μmの範囲で求めた平均粗さが0.15μm以上であり、幅3μmの範囲で求めた平均粗さが0.02μm以上であることを特徴とする半導体モジュール。
(平均粗さの測定・算出方法)
前記絶縁性基板の断面を走査電子顕微鏡で撮影してSEM画像を用意し、前記SEM画像を2値化して表面形状の画像データを用意し、前記画像データを画像数値化ソフトを用いて2次元座標データに変換し、下記数式により平均粗さZaを計算して求める。
セラミックス製の絶縁性基板の表面粗さを調整する表面処理工程と、
前記絶縁性基板を加熱処理して前記絶縁性基板の表面を酸化する酸化処理工程と、
前記絶縁性基板の表面にろう材を塗布するろう材塗布工程と、
前記ろう材を介して金属箔を前記絶縁性基板表面に接合する金属箔接合工程と、
前記金属箔と前記ろう材とをエッチングして回路パターンを形成する回路パターン形成工程と、
前記回路パターン上に半導体素子を接合する半導体素子実装工程と、
前記絶縁性基板、前記回路パターン及び前記半導体素子を、封止樹脂で封止する封止工程とを含む半導体モジュールの製造方法であって、
前記表面処理工程は、前記絶縁性基板の表面をウェットブラスト処理して、前記絶縁性基板の断面において、幅300μmの範囲で求めた平均粗さが0.15μm以上となるように粗面化する工程からなり、
前記ろう材塗布工程は、前記絶縁性基板表面の、前記金属箔が接合される面だけでなく、前記金属箔が接合されない面であって前記封止樹脂が密着する面に対しても、ろう材を塗布する工程からなり、
前記回路パターン形成工程において、前記ろう材が塗布された部分をエッチングすることによって、前記絶縁性基板の前記封止樹脂が密着する面が、前記絶縁性基板の断面において、前述した方法によって測定し算出した、幅300μmの範囲で求めた平均粗さが0.15μm以上であり、幅3μmの範囲で求めた平均粗さが0.02μm以上である表面粗さとなることを特徴とする。
該絶縁性基板上に形成された回路パターンとを有する絶縁回路基板において、
前記絶縁性基板の前記回路パターンが形成されていない部分の表面は、前記絶縁性基板の断面において、前述した方法によって測定し算出した、幅300μmの範囲で求めた平均粗さが0.15μm以上であり、幅3μmの範囲で求めた平均粗さが0.02μm以上であることを特徴とする。
図3(A)(幅300μm)の表面形状は、例えば1000倍で撮影したSEM画像を用いて取出すことができ、図3(B)(幅3μm)の表面形状は、例えば結晶粒の表面を15000倍の倍率で撮影したSEM画像を用いて取出すことができる。
本発明の半導体モジュールの製造方法においては、絶縁性基板23として、セラミックス基板を用いる。特には、窒化アルミニウム焼結体からなるセラミックス基板が好ましく用いられる。
次に、絶縁性基板23を加熱処理して、絶縁性基板23の表面を酸化処理する。加熱処理は、例えば800~1200℃好ましくは1000℃~1100℃で2~12時間保持して行うことができる。
次に、絶縁性基板23の表面にろう材を塗布する。ろう材としては、例えばAg-Cu系ろう材にTi、Zr、Hf、Nbなどから選ばれる少なくとも1種の活性金属を含む活性金属ろう材を使用するのが好ましい。必要に応じてSn、Inなどを含んでいてもよい。前記活性金属ろう材はペースト状のろう材を好ましく用いることができる。ろう材の塗布は、例えばスクリーン印刷、ロールコーター等によって行うことができる。
次に、絶縁性基板23表面のろう材を塗布した部分の所定箇所に、回路パターン24を形成するための金属箔を設置し、その状態で必要により押圧して、加熱処理することにより、上記ろう材を溶融させて、ろう材を介して金属箔を絶縁性基板23表面に接合する。
こうして金属箔を接合した後、フォトエッチング等の周知の方法で、金属箔及びろう材をエッチングしてパターニングし、回路パターン24を形成する。
こうして回路パターン24を形成した後、常法に従って、半導体素子25,26や、外部端子12を、はんだ29を介して接合する。
最後に、絶縁性基板23、回路パターン24、半導体素子25,26、及び外部端子12の下方部分等を、封止樹脂28で封止することにより、半導体モジュール50、50aを製造することができる。
図5に示すように、絶縁性基板23上に、図示しない型を重ね、型に設けられた孔に樹脂を注入し、170℃で60分間加熱硬化させることによって、図5に示す形状及び大きさ(底面の直径3.57mm、上面の直径3mm、高さ4mmの円錐台形状)の封止樹脂28を、絶縁性基板23に接合された状態で成形した。
比較例1
幅300μmの範囲で求めた平均粗さが0.10μm、幅3μmの範囲で求めた平均粗さが0.015μmの表面粗さを有する窒化アルミニウム焼結体からなるセラミックス基板(以下「標準品」とする)の表面に、前述した方法で、封止樹脂28の成形体を形成した。
上記標準品のセラミックス基板に活性金属含有ペーストろう材(金属分の重量比としてAg:Cu:Ti=80:17:3)を塗布して、該ろう材上に無酸素銅の銅箔を積層し、ろう材を真空中850℃に加熱して溶融、凝固させることにより、ろう材を介して銅箔をセラミックス基板表面に固着させた後、塩化第2銅エッチング液により銅箔を除去し、ついで5%の過酸化水素と3%のアンモニア水と1.6重量%のEDTAを含む水溶液に20℃で15分間浸漬し、水洗した後、2%のDTPA・5Naと5%の過酸化水素を含む水溶液に30℃で30分間浸漬することにより、ろう材を除去した。こうして、幅300μmの範囲で求めた平均粗さが0.10μm、幅3μmの範囲で求めた平均粗さが0.025μmの表面粗さを有するセラミックス基板を形成した。この基板の表面に、前述した方法で、封止樹脂28の成形体を形成した。
上記標準品のセラミックス基板の表面を富士機工製ウェットブラストでアルミナ砥材320番のものを0.2MPaの圧力で処理して、次いで、セラミックス基板を大気中1050℃で2時間加熱処理してその表面を酸化し幅300μmの範囲で求めた平均粗さが0.33μm、幅3μmの範囲で求めた平均粗さが0.015μmの表面粗さを有するセラミックス基板を形成した。この基板の表面に、前述した方法で、封止樹脂28の成形体を形成した。
上記標準品のセラミックス基板の表面を比較例3と同じ条件でウェットブラストと酸化処理して、幅300μmの範囲で求めた平均粗さが0.33μm、幅3μmの範囲で求めた平均粗さが0.015μmの表面粗さを有するセラミックス基板を形成した。次いで、比較例2と同じ条件でろう材を塗布して、銅箔を積層し、ろう材を真空中850℃に加熱溶融、凝固させることにより、ろう材を介して銅箔をセラミックス基板表面に固着させた後、比較例2と同様にエッチング液に浸漬して銅箔、ろう材および反応層を除去した。こうして、幅300μmの範囲で求めた平均粗さが0.33μm、幅3μmの範囲で求めた平均粗さが0.025μmの表面粗さを有するセラミックス基板を形成した。この基板の表面に、前述した方法で、封止樹脂28の成形体を形成した。
窒化アルミニウム焼結体からなるセラミックス基板(標準品)を用い、ウェットブラス処理の条件(処理時間)を変化させた以外は実施例1と同様の製造方法により、幅300μmの範囲で求めた平均粗さを変えたものを作成した。なお、幅3μmの範囲で求めた平均粗さは、一部を除いて、いずれも0.02μm以上であった。
12 外部端子
13 ケース
14 接着剤
21 絶縁回路基板
22 金属板
23 絶縁性基板
24 回路パターン
25,26 半導体素子
27 ボンディングワイヤ
28 封止樹脂
29 はんだ
30 結晶粒の表面
50、50a 半導体モジュール
Claims (8)
- 絶縁性基板と、
該絶縁性基板上に形成された回路パターンと、
該回路パターン上に接合された半導体素子と、
前記絶縁性基板、前記回路パターン及び前記半導体素子を封止する封止樹脂とを備えた半導体モジュールにおいて、
前記絶縁性基板と前記封止樹脂とが密着した部分における前記絶縁性基板の表面は、前記絶縁性基板の断面において、下記方法によって測定し算出した、幅300μmの範囲で求めた平均粗さが0.15μm以上、2μm以下であり、幅3μmの範囲で求めた平均粗さが0.02μm以上、0.1μm以下であることを特徴とする半導体モジュール。
(平均粗さの測定・算出方法)
前記絶縁性基板の断面を走査電子顕微鏡で撮影してSEM画像を用意し、前記SEM画像を2値化して表面形状の画像データを用意し、前記画像データを画像数値化ソフトを用いて2次元座標データに変換し、下記数式により平均粗さZaを計算して求める。
上記数式中、Zaは平均粗さを表す。Znは各nにおける前記2次元座標データと平均値との差を表す。Nは測定幅を測定ピッチで割った値であり、幅300μmの粗さ計算時はピッチ=0.5μm、すなわちN=600、幅3μmの粗さ計算時はピッチ=0.005μm、すなわちN=600とする。 - 前記絶縁性基板と前記封止樹脂とが密着した部分は、前記絶縁性基板の周縁部を含んでいる、請求項1記載の半導体モジュール。
- 前記絶縁性基板と前記封止樹脂とが密着した部分における前記絶縁性基板の表面は、前記絶縁性基板の断面において、幅300μmの範囲で求めた平均粗さが0.7μm以上である、請求項1又は2記載の半導体モジュール。
- セラミックス製の絶縁性基板の表面粗さを調整する表面処理工程と、
前記絶縁性基板を加熱処理して前記絶縁性基板の表面を酸化する酸化処理工程と、
前記絶縁性基板の表面にろう材を塗布するろう材塗布工程と、
前記ろう材を介して金属箔を前記絶縁性基板表面に接合する金属箔接合工程と、
前記金属箔と前記ろう材とをエッチングして回路パターンを形成する回路パターン形成工程と、
前記回路パターン上に半導体素子を接合する半導体素子実装工程と、
前記絶縁性基板、前記回路パターン及び前記半導体素子を、封止樹脂で封止する封止工程とを含む半導体モジュールの製造方法であって、
前記表面処理工程は、前記絶縁性基板の表面をウェットブラスト処理して粗面化する工程を含み、
前記ろう材塗布工程は、前記絶縁性基板表面の、前記金属箔が接合される面だけでなく、前記金属箔が接合されない面であって前記封止樹脂が密着する面に対しても、ろう材を塗布する工程を含み、
前記回路パターン形成工程において、前記ろう材が塗布された部分をエッチングすることによって、前記絶縁性基板の前記封止樹脂が密着する面が、前記絶縁性基板の断面において、下記方法によって測定し算出した、幅300μmの範囲で求めた平均粗さが0.15μm以上であり、幅3μmの範囲で求めた平均粗さが0.02μm以上である表面粗さとすることを特徴とする半導体モジュールの製造方法。
(平均粗さの測定・算出方法)
前記絶縁性基板の断面を走査電子顕微鏡で撮影してSEM画像を用意し、前記SEM画像を2値化して表面形状の画像データを用意し、前記画像データを画像数値化ソフトを用いて2次元座標データに変換し、下記数式により平均粗さZaを計算して求める。
上記数式中、Zaは平均粗さを表す。Znは各nにおける前記2次元座標データと平均値との差を表す。Nは測定幅を測定ピッチで割った値であり、幅300μmの粗さ計算時はピッチ=0.5μm、すなわちN=600、幅3μmの粗さ計算時はピッチ=0.005μm、すなわちN=600とする。 - 前記絶縁性基板は、窒化アルミニウムからなる、請求項4記載の半導体モジュールの製造方法。
- 前記絶縁性基板は、セラミックス製である、請求項1~3のいずれか1項に記載の半導体モジュール。
- 前記絶縁性基板は、窒化アルミニウムからなる、請求項6に記載の半導体モジュール。
- 絶縁性基板と、
該絶縁性基板上に形成された回路パターンとを有する絶縁回路基板において、
前記絶縁性基板の前記回路パターンが形成されていない部分の表面は、前記絶縁性基板の断面において、下記方法によって測定し算出した、幅300μmの範囲で求めた平均粗さが0.15μm以上、2μm以下であり、幅3μmの範囲で求めた平均粗さが0.02μm以上、0.1μm以下であることを特徴とする絶縁回路基板。
(平均粗さの測定・算出方法)
前記絶縁性基板の断面を走査電子顕微鏡で撮影してSEM画像を用意し、前記SEM画像を2値化して表面形状の画像データを用意し、前記画像データを画像数値化ソフトを用いて2次元座標データに変換し、下記数式により平均粗さZaを計算して求める。
上記数式中、Zaは平均粗さを表す。Znは各nにおける前記2次元座標データと平均値との差を表す。Nは測定幅を測定ピッチで割った値であり、幅300μmの粗さ計算時はピッチ=0.5μm、すなわちN=600、幅3μmの粗さ計算時はピッチ=0.005μm、すなわちN=600とする。
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