CN111512434A - 半导体模块及其制造方法 - Google Patents

半导体模块及其制造方法 Download PDF

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Publication number
CN111512434A
CN111512434A CN201980006691.7A CN201980006691A CN111512434A CN 111512434 A CN111512434 A CN 111512434A CN 201980006691 A CN201980006691 A CN 201980006691A CN 111512434 A CN111512434 A CN 111512434A
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Prior art keywords
insulating substrate
width
average roughness
sealing resin
semiconductor module
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CN201980006691.7A
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CN111512434B (zh
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西田祐平
百瀬文彦
出野尭
北村征宽
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Fuji Electric Co Ltd
Dowa Metaltech Co Ltd
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Fuji Electric Co Ltd
Dowa Metaltech Co Ltd
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Abstract

提供绝缘性基板与密封树脂之间的接合性进一步提高的半导体模块及其制造方法。该半导体模块(50)包括：绝缘性基板(23)；电路图案(24)，其形成于该绝缘性基板上；半导体元件(25、26)，其接合于该电路图案上；以及密封树脂(28)，其密封所述绝缘性基板、所述电路图案以及所述半导体元件。而且，该半导体模块(50)的特征在于，对于所述绝缘性基板的表面(23a)的、位于所述绝缘性基板与所述密封树脂密合的部分处的部分，在所述绝缘性基板的剖面中，在宽度300μm的范围内求得的平均粗糙度为0.15μm以上，在宽度3μm的范围内求得的平均粗糙度为0.02μm以上。

Description

半导体模块及其制造方法
技术领域
本发明涉及在绝缘性基板上隔着电路图案接合半导体元件、且将绝缘性基板、电路图案以及半导体元件用密封树脂密封的构造的半导体模块及其制造方法。
背景技术
在例如下述专利文献1所示那样的、作为电力转换用的开关器件来使用的功率半导体模块等中，为了赋予绝缘性、耐热性、耐久性，构成将绝缘性基板、电路图案以及半导体元件用密封树脂密封的构造。
然而，由于作为开关器件工作时产生的热，而反复暴露于高温中，由此，绝缘性基板与密封树脂之间的粘接面剥离，剥离向内部扩展，而可能引起浸水、布线的剥离等不良情况。
对此，公开有一种通过使绝缘性基板表面粗糙化来提高固着效果，从而提高与金属膜、密封树脂之间的粘接性的技术。
例如，下述专利文献2中，公开有一种为了使与金属膜之间的密合力提高而利用离子束蚀刻处理在结晶颗粒表面形成微细凹凸的陶瓷电路基板的制造方法。
另外，在下述专利文献3中，公开有一种为了提高固着效果而在结晶颗粒表面形成有由酸性蚀刻处理形成的直径小于结晶颗粒直径的多个突起部的陶瓷构件。
另外，在下述专利文献4中，记载有一种利用具备多个具有比平均结晶粒径大的凹凸的凹坑、突起的陶瓷基体提高钎料的固着效果的方案。
而且，在下述专利文献5中，记载有一种通过使磨粒撞击氮化铝基板的表面而使其表面粗糙化，从而提高金属电路箔的接合强度的方案。
此外，在下述专利文献6中，公开有一种包括电路基板、搭载有电路基板的散热器、与电路基板电连接的引线、以覆盖电路基板和电路基板与引线之间的连接部且使引线的局部和散热器的局部露出在外部的方式配置密封树脂而成的密封树脂部的电子控制装置，在该电子控制装置中，对电路基板的表面和散热器的表面中的至少一者的、要与密封树脂部接触的部位的至少局部进行粗糙化处理。
现有技术文献
专利文献
专利文献1：日本特开2013－258321号公报
专利文献2：日本特开平5－24959号公报
专利文献3：日本特开2002－241187号公报
专利文献4：日本特开2010－30280号公报
专利文献5：日本特开2013－27918号公报
专利文献6：日本特开2008－172172号公报
发明内容
发明要解决的问题
然而，在上述专利文献1～5中，未对用于改善绝缘性基板与密封树脂之间的密合强度的绝缘性基板的表面粗糙度进行研究。另外，在上述专利文献6中，关于粗糙化处理的条件未详细记载。
因而，在上述以往技术公开的技术中，还不能称为绝缘性基板与密封树脂之间的密合性的改善效果够充分。
因而，本发明的目的在于提供绝缘性基板与密封树脂之间的密合性进一步提高了的半导体模块及其制造方法。
用于解决问题的方案
为了达成上述目的，本发明的半导体模块包括：
绝缘性基板；
电路图案，其形成于该绝缘性基板上；
半导体元件，其接合在该电路图案上；以及
密封树脂，其将所述绝缘性基板、所述电路图案以及所述半导体元件密封，该半导体模块的特征在于，
对于所述绝缘性基板的表面的、位于所述绝缘性基板与所述密封树脂密合的部分处的部分，在所述绝缘性基板的剖面中，利用下述方法测量并计算出的、在宽度300μm的范围内求得的平均粗糙度为0.15μm以上，且在宽度3μm的范围内求得的平均粗糙度为0.02μm以上，
(平均粗糙度的测量和计算方法)
利用扫描电子显微镜拍摄所述绝缘性基板的剖面而准备SEM图像，使所述SEM图像二值化而准备表面形状的图像数据，使用图像数值化软件将所述图像数据转换为二维坐标数据，利用下述数学式计算并求得平均粗糙度Za。
[式1]
Figure BDA0002547918380000031
在上述数学式中，Za表示平均粗糙度。Zn表示各n的所述二维坐标数据与平均值之差。N是用测量宽度除以测量间距得到的值，计算宽度300μm的粗糙度时，设为间距＝0.5μm，即N＝600，计算宽度3μm的粗糙度时，设为间距＝0.005μm，即N＝600。
在本发明的半导体模块中，优选的是，所述绝缘性基板与所述密封树脂密合的部分包含所述绝缘性基板的周缘部。
另外，优选的是，对于所述绝缘性基板的表面的、位于所述绝缘性基板与所述密封树脂密合的部分处的部分，在所述绝缘性基板的剖面中，在宽度300μm的范围内求得的平均粗糙度为2μm以下。
另外，优选的是，对于所述绝缘性基板的表面的、位于所述绝缘性基板与所述密封树脂密合的部分处的部分，在所述绝缘性基板的剖面中，在宽度300μm的范围内求得的平均粗糙度为0.7μm以上。
另外，优选的是，对于所述绝缘性基板的表面的、位于所述绝缘性基板与所述密封树脂密合的部分处的部分，在宽度3μm的范围内求得的平均粗糙度为0.1μm以下。
另一方面，本发明的半导体模块的制造方法包含：
表面处理工序，调整陶瓷制的绝缘性基板的表面粗糙度；
氧化处理工序，对所述绝缘性基板进行加热处理，使所述绝缘性基板的表面氧化；
钎料涂布工序，在所述绝缘性基板的表面涂布钎料；
金属箔接合工序，借助所述钎料将金属箔与所述绝缘性基板的表面接合；
电路图案形成工序，对所述金属箔和所述钎料进行蚀刻，形成电路图案；
半导体元件安装工序，在所述电路图案上接合半导体元件；以及
密封工序，利用密封树脂将所述绝缘性基板、所述电路图案以及所述半导体元件密封，
该半导体模块的制造方法的特征在于，
所述表面处理工序包含如下工序：对所述绝缘性基板的表面进行湿喷砂处理而使其表面粗糙化为在所述绝缘性基板的剖面中在宽度300μm的范围内求得的平均粗糙度成为0.15μm以上，
所述钎料涂布工序包含如下工序：不仅对所述绝缘性基板的表面的、要接合所述金属箔的面，还对所述绝缘性基板的表面的、不接合所述金属箔的面且是要与所述密封树脂密合的面也涂布钎料，
在所述电路图案形成工序中，对涂布了所述钎料的部分进行蚀刻，由此，将所述绝缘性基板的要与所述密封树脂密合的面设为这样的表面粗糙度：在所述绝缘性基板的剖面中，利用上述方法测量并计算出的、在宽度300μm的范围内求得的平均粗糙度为0.15μm以上，且在宽度3μm的范围内求得的平均粗糙度为0.02μm以上。
在本发明的半导体的制造方法中，所述绝缘性基板优选为陶瓷制，更优选由氮化铝形成。
另外，本发明的绝缘电路基板具有：
绝缘性基板；
电路图案，其形成于该绝缘性基板上，
该绝缘电路基板的特征在于，
对于所述绝缘性基板的未形成所述电路图案的部分的表面，在所述绝缘性基板的剖面中，利用上述方法测量并计算出的、在宽度300μm的范围内求得的平均粗糙度为0.15μm以上，且在宽度3μm的范围内求得的平均粗糙度为0.02μm以上。
发明的效果
根据本发明的半导体模块，对于绝缘性基板的表面的、位于绝缘性基板与密封树脂密合的部分处的部分，在绝缘性基板的剖面中，在宽度300μm的范围内求得的平均粗糙度为0.15μm以上，在宽度3μm的范围内求得的平均粗糙度为0.02μm以上，由此，绝缘性基板与密封树脂之间的密合强度提高，在高温下也能够维持较高的密合强度，抑制密封树脂的剥离，因此能够使半导体模块的耐久性提高。
根据本发明的半导体模块的制造方法，在绝缘性基板表面利用湿喷砂处理形成相对较粗的凹凸，而且，对不接合金属箔的面且是要直接粘接密封树脂的面也涂布钎料并进行蚀刻，由此能够在相对较粗的凹凸的表面进一步形成微小的凹凸，利用在较粗的凹凸表面进一步形成了微小的凹凸的粗糙面，能够进一步提高密封树脂的密合强度，能够抑制密封树脂的剥离。
根据本发明的绝缘电路基板，在作为半导体模块的绝缘电路基板来使用并利用密封树脂进行了密封时，绝缘性基板与密封树脂之间的密合强度提高，在高温下也能够维持较高的密合强度，而抑制密封树脂的剥离，因此能够使半导体模块的耐久性提高。
附图说明
图1是本发明的实施方式所涉及的半导体模块的剖视图。
图2是本发明的另一实施方式所涉及的半导体模块的剖视图。
图3是表示本发明的半导体模块的绝缘性基板表面的粗糙度的示意图。
图4是表示平均粗糙度的计算式、概念的说明图。
图5是表示绝缘性基板与密封树脂之间的剥离强度的测量方法的说明图。
图6是表示绝缘性基板与密封树脂之间的剥离强度的测量结果的图表。
图7是表示绝缘性基板与密封树脂之间的剥离强度的另一测量结果的图表。
具体实施方式
以下，参照附图说明本发明的半导体模块的实施方式。
在图1中表示应用本发明的半导体模块的一实施方式。该半导体模块50为功率半导体模块，在绝缘性基板23的上表面形成有电路图案24，在绝缘性基板23的下表面接合有热传导较好的金属板22。由绝缘性基板23、电路图案24、金属板22构成绝缘电路基板21。
作为绝缘性基板23，例如优选使用以氮化铝、氧化铝、氮化硅等为主要成分的陶瓷基板，但也能够使用在铝等的金属板表面覆盖绝缘树脂层而成的基板等。特别优选为由氮化铝烧结体形成的陶瓷基板。陶瓷基板的陶瓷的平均结晶粒径优选为0.5μm～20μm，更优选为2μm～7μm。氮化铝烧结体能够通过烧制由平均粒径为0.1μm～15μm的氮化铝原料粉末形成的成型体来得到，成型体可以根据需要而含有烧结助剂、有机粘合剂等。
作为电路图案24，优选采用利用蚀刻将借助钎料接合于绝缘性基板23的金属箔图案化而成的电路图案。作为金属箔，没有特别限定，例如优选采用铜。金属板22只要热传导性较佳即可，没有特别限定，例如能够使用铜、铝、铜合金、铝合金等的金属板。
而且，在电路图案24上借助软钎料29接合有半导体元件25、26。另外，在电路图案24上借助软钎料29竖立设置有外部端子12，半导体元件25、26和外部端子12利用电路图案24、接合线27连接。
半导体元件25、26例如为IGBT(Insulated Gate Bipolar Transistor，绝缘栅双极晶体管)、功率MOSFET(Metal Oxide Semiconductor Field Effect Transistor，金属氧化物半导体场效应管)。IGBT也可以为RB－IGBT(Reverse Blocking-IGBT，逆阻绝缘栅双极晶体管)、RC－IGBT(Reverse Conducting-IGBT，逆导绝缘栅双极晶体管)。
此外，除金属板22的下表面和外部端子12的上方部分以外，绝缘性基板23、电路图案24、半导体元件25、26、外部端子12的下方部分以及金属板22的侧面均利用密封树脂28密封。作为密封树脂28，没有特别限定，例如使用环氧树脂、马来酰亚胺树脂、硅树脂、液晶聚合物等。
密封树脂28与绝缘性基板23、电路图案24、半导体元件25、26、外部端子12的下方部分以及金属板22的侧面分别密合，绝缘性基板23具有与密封树脂28密合(粘接)的面(以下称为“密封树脂密合面”)23a。密封树脂密合面23a以围绕电路图案24的外周和金属板22的外周的方式形成于绝缘性基板23的周缘部，在该实施方式中，除绝缘性基板23的上表面侧的周缘部以外，绝缘性基板23的外周侧面、绝缘性基板23的下表面侧的周缘部的位于金属板22的外周的部分也成为密封树脂密合面23a。
在图2中示出应用本发明的半导体模块的另一实施方式。该半导体模块50a也为功率半导体模块，在绝缘性基板23的上表面形成有电路图案24，在绝缘性基板23的下表面接合有热传导较好的金属板22。由绝缘性基板23、电路图案24、金属板22构成绝缘电路基板21。
但是，在该半导体模块50a中，设有围绕绝缘电路基板21的、树脂制的框状的壳体13，绝缘电路基板21的周缘部借助粘接剂14固着于壳体13。呈L字状弯折的外部端子12的下方部分以贯通壳体13并在壳体13内露出的方式一体成型于壳体13而构成嵌入式壳体11。
而且，在电路图案24上借助软钎料29接合有半导体元件25、26。半导体元件25、26与外部端子12利用电路图案24、接合线27连接。
此外，在壳体13的内部填充有密封树脂28，绝缘性基板23、电路图案24、半导体元件25、26、外部端子12的下方部分利用密封树脂28密封。该实施方式的情况下，绝缘性基板23也具有与密封树脂28密合(粘接)的密封树脂密合面23a。密封树脂密合面23a形成于绝缘性基板23的周缘部。
本发明的半导体模块的特征在于，在上述这样的半导体模块50、50a中，使绝缘性基板23的密封树脂密合面23a的表面粗糙度成为特定的表面粗糙度。
即，本发明的半导体模块50、50a的特征在于，在绝缘性基板23的密封树脂密合面23a的宽度300μm的范围内求得的平均粗糙度为0.15μm以上，在宽度3μm的范围内求得的平均粗糙度为0.02μm以上。以下，详细说明本发明中采用的上述平均粗糙度的测量、计算方法。
图3示出了密封树脂密合面23a在绝缘性基板23的剖面中的表面形状。从绝缘性基板23的剖面中提取表面形状的操作能够通过以下这样来进行：利用扫描电子显微镜拍摄与基板的表面成直角的剖面，准备SEM图像，将SEM图像二值化，准备反映表面形状的图像数据，将图像数据转换为二维坐标数据。
SEM图像的二值化能够利用具有图像处理功能的软件、例如“MicrosoftPowerPoint”(商品名称，微软公司制)使对比最大化来制作。此外，作为具有图像处理功能的软件，也可以使用上述以外的软件。
图3的(A)是沿着绝缘性基板23的剖面的表面以图中由箭头所示的宽度成为300μm的方式取出的形状，图3的(B)是以图中由箭头所示的宽度成为3μm的方式取出图3的(A)所示的形状的一部分而得到的形状。此外，附图标记30表示晶粒的表面。
例如能够使用以1000倍拍摄到的SEM图像取出图3的(A)(宽度300μm)的表面形状，例如能够使用以15000倍的倍率拍摄晶粒的表面得到的SEM图像取出图3的(B)(宽度3μm)的表面形状。
使用图像数值化软件、例如“Graphcel”(商品名称，免费软件)将这样二值化后的表面形状的图像数值化，用制表软件、例如“Microsoft Excel”(商品名称，微软公司制)，根据图4所示的下述数学式能够计算并求得平均粗糙度。
[式2]
Figure BDA0002547918380000091
在上述数学式中，Za表示平均粗糙度。Zn表示各n的所述二维坐标数据与平均值之差。N是用测量宽度除以测量间距得到的值，在计算宽度300μm的粗糙度时，设为间距＝0.5μm，即N＝600，在计算宽度3μm的粗糙度时，设为间距＝0.005μm，即N＝600。
此外，在来自剖面的表面形状的三处以上进行平均粗糙度的测量，并将其平均值作为测量值。
而且，在本发明中，例如以由图3的(A)的箭头所示的宽度300μm为基准长度L，使根据该部分的表面形状且利用图4所示的数学式计算平均粗糙度得到的值成为0.15μm以上。另外，以由图3的(B)的箭头所示的宽度3μm为基准长度L，使根据该部分的表面形状且利用图4所示的数学式计算平均粗糙度得到的值成为0.02μm以上。
通过将绝缘性基板23的密封树脂粘接面23a设为上述那样的表面形状，绝缘性基板23与密封树脂28之间的密合强度提高，即使在高温下，也能够维持较高的密合强度，而抑制密封树脂的剥离，因此，能够使半导体模块的耐久性提高。另外，绝缘性基板23的密封树脂粘接面23a以围绕电路图案24的方式形成于绝缘性基板23的周缘，在该部分的剥离得到抑制，因而能够更坚固地保护电路图案24、与该电路图案24接合的半导体元件25、26，能够提高可靠性。
此外，为了进一步提高绝缘性基板23与密封树脂28之间的密合强度，在绝缘性基板23的密封树脂粘接面23a的宽度300μm的范围内求得的平均粗糙度优选为0.7μm以上，更优选为1.1μm以上。但是，为了不妨碍电路图案24等的形成，在上述宽度300μm的范围内求得的平均粗糙度优选为2μm以下。
另外，在提高绝缘性基板23与密封树脂28之间的密合强度的方面，在绝缘性基板23的密封树脂粘接面23a的宽度3μm的范围内求得的平均粗糙度优选为0.1μm以下。
接着，说明本发明的半导体模块的制造方法。
(表面处理工序)
在本发明的半导体模块的制造方法中，作为绝缘性基板23而使用陶瓷基板。特别是，优选使用由氮化铝烧结体形成的陶瓷基板。
而且，对绝缘性基板23的表面进行湿喷砂处理而使其表面粗糙化为：在绝缘性基板23的剖面中，在宽度300μm的范围内求得的平均粗糙度成为0.15μm以上。
湿喷砂处理能够通过以下这样进行：使用具有比陶瓷基板的硬度高的硬度的磨粒，使含有该磨粒的液体与压缩空气一起向陶瓷基板喷射。此时，通过调整磨粒的颗粒的大小、喷射压力，能够调整在宽度300μm的范围内求得的平均粗糙度的值。
(氧化处理工序)
接着，对绝缘性基板23进行加热处理，对绝缘性基板23的表面进行氧化处理。加热处理能够通过在例如800℃～1200℃、优选为1000℃～1100℃下保持2小时～12小时来进行。
(钎料涂布工序)
接着，在绝缘性基板23的表面涂布钎料。作为钎料，优选使用例如在Ag-Cu系钎料中含有从Ti、Zr、Hf、Nb等中选择的至少一种活性金属的活性金属钎料。还可以根据需要而含有Sn、In等。所述活性金属钎料能够优选使用膏状的钎料。钎料的涂布能够利用例如丝网印刷、辊涂机等进行。
以往，钎料通常仅涂布在绝缘性基板23表面的、要接合用于形成电路图案24的金属箔的部分。但是，在本发明中，在绝缘性基板23的成为密封树脂粘接面23a的部分的、不接合金属箔的部分也涂布钎料。优选的是，在绝缘性基板23的密封树脂粘接面23a的整个面涂布钎料。
(金属箔接合工序)
接着，在绝缘性基板23的表面的涂布了钎料的部分的规定部位设置用于形成电路图案24的金属箔，在该状态下根据需要进行按压，进行加热处理，从而使上述钎料熔融，而借助钎料将金属箔与绝缘性基板23的表面接合。
(电路图案形成工序)
在这样接合了金属箔之后，利用光蚀刻法等众所周知的方法，对金属箔和钎料进行蚀刻使其图案化，形成电路图案24。
此时，通过蚀刻去除固着在绝缘性基板23的表面的钎料而呈现的绝缘性基板23的表面是在所述表面处理工序中以在宽度300μm的范围内求得的平均粗糙度成为0.15μm以上的方式进行表面粗糙化处理而形成的相对较大的凹凸表面形成在宽度3μm的范围内求得的平均粗糙度成为0.02μm以上的微细的凹凸而成的面。
上述微细的凹凸是通过蚀刻去除固着在绝缘性基板23的表面的钎料而形成的，即使蚀刻绝缘性基板23的仅进行了氧化处理的表面，也不会形成那样的凹凸。因此，在本发明中，在所述钎料涂布工序中，在绝缘性基板23的成为密封树脂粘接面23a的部分的、不接合金属箔的部分也涂布钎料。
(半导体元件安装工序)
在这样形成了电路图案24之后，按照常规方法，借助软钎料29接合半导体元件25、26、外部端子12。
(密封工序)
最后，利用密封树脂28将绝缘性基板23、电路图案24、半导体元件25、26以及外部端子12的下方部分等密封，从而能够制造半导体模块50、50a。
在这样得到的半导体模块50、50a中，绝缘性基板23的密封树脂粘接面23a的表面形状具有在宽度300μm的范围内求得的平均粗糙度成为0.15μm以上的相对较粗的凹凸，并且在该相对较大的凹凸表面形成有在宽度3μm的范围内求得的平均粗糙度成为0.02μm以上的微细的凹凸，因此，如上所述，绝缘性基板23与密封树脂28之间的密合强度提高，在高温下也能够维持较高的密合强度，而抑制密封树脂的剥离，因此能够使半导体模块的耐久性提高。
实施例
作为绝缘性基板，使用由氮化铝烧结体形成的陶瓷基板，作为密封树脂，使用环氧树脂，改变绝缘性基板的表面粗糙度，并测量绝缘性基板与密封树脂之间的密合强度。
(树脂密合强度的测量方法)
如图5所示，在绝缘性基板23上放置未图示的模具，向设于模具的孔注入树脂，并以170℃的温度加热60分钟使该树脂固化，从而以与绝缘性基板23接合的状态成型图5所示的形状及大小(底面的直径为3.57mm、上表面的直径为3mm、高度为4mm的圆锥台状)的密封树脂28。
将该样品放置于剪切试验机(组合有产品名称“DIGITAL FORCE GAUGE Model ZP-1000N”、株式会社イマダ制与产品名称“FORCE GAUGE STAND Model FGS-50D”、シンポ工业株式会社制的试验机)，将推压件40抵接于已成型的密封树脂28，以0.03mm/sec的剪切速度进行推压，测量断裂时的最大负荷(kgf)，用该负荷除以10mm2求得密合强度(MPa)。
(试验例1)
比较例1
在具有在宽度300μm的范围内求得的平均粗糙度为0.10μm、在宽度3μm的范围内求得的平均粗糙度为0.015μm的表面粗糙度的由氮化铝烧结体形成的陶瓷基板(以下称为“标准品”)的表面，利用上述方法形成密封树脂28的成型体。
比较例2
在上述标准品的陶瓷基板涂布含活性金属的膏状钎料(作为金属成分的重量比，Ag：Cu：Ti＝80：17：3)，并在该钎料上层叠无氧铜的铜箔，将钎料在真空中加热至850℃而使其熔融、凝固，从而借助钎料使铜箔固着在陶瓷基板表面，之后利用氯化铜蚀刻液去除铜箔，接着在含有5％的过氧化氢和3％的氨水以及1.6重量％的EDTA的水溶液中且是在20℃的温度下浸渍15分钟，在水洗之后，在含有2％的DTPA-5Na和5％的过氧化氢的水溶液中且是在30℃的温度下浸渍30分钟，从而去除钎料。如此，形成具有在宽度300μm的范围内求得的平均粗糙度为0.10μm、在宽度3μm的范围内求得的平均粗糙度为0.025μm的表面粗糙度的陶瓷基板。在该基板的表面利用上述的方法形成密封树脂28的成型体。
比较例3
利用富士机工制湿喷砂机将氧化铝磨料320号以0.2MPa的压力处理上述标准品的陶瓷基板的表面，接着，在大气中以1050℃的温度对陶瓷基板进行两个小时加热处理，使其表面氧化，形成具有在宽度300μm的范围内求得的平均粗糙度为0.33μm、在宽度3μm的范围内求得的平均粗糙度为0.015μm的表面粗糙度的陶瓷基板。在该基板的表面利用上述的方法形成密封树脂28的成型体。
实施例1
在与比较例3相同的条件下，对上述标准品的陶瓷基板的表面进行湿喷砂和氧化处理，形成具有在宽度300μm的范围内求得的平均粗糙度为0.33μm、在宽度3μm的范围内求得的平均粗糙度为0.015μm的表面粗糙度的陶瓷基板。接着，在与比较例2相同的条件下涂布钎料，并层叠铜箔，将钎料在真空中加热至850℃使其熔融、凝固，从而借助钎料使铜箔固着在陶瓷基板表面，之后，与比较例2相同地浸渍于蚀刻液，去除铜箔、钎料以及反应层。如此，形成具有在宽度300μm的范围内求得的平均粗糙度为0.33μm、在宽度3μm的范围内求得的平均粗糙度为0.025μm的表面粗糙度的陶瓷基板。在该基板的表面利用上述的方法形成密封树脂28的成型体。
对于这样得到的比较例1～3、实施例1的样品，利用图5所示的方法，测量密合强度(MPa)。此外，在室温(R.T；25℃)下和150℃的高温下进行密合强度的测量。图6中表示该结果。
如图6所示，在直接使用了由氮化铝烧结体形成的陶瓷基板的标准品的比较例1中，密合强度极低。
另外，对于在实施了比较例2的处理的陶瓷基板的表面形成了密封树脂28的成型体的比较例2的密合强度的评价，虽然无论在室温下还是在高温下密合强度均提高了接近一倍，但尚不能称为充分的强度。
另外，对于在实施了比较例3的处理的陶瓷基板的表面形成了密封树脂28的成型体的比较例3的密合强度的评价，虽然无论在室温下还是在高温下密合强度均得到了提高，但未达到在充分赋予半导体模块耐热、耐久性的方面成为目标值的25MPa。
另外，对于在实施了实施例1的处理的陶瓷基板的表面形成了密封树脂28的成型体的实施例1的密合强度的评价，无论在室温下还是在高温下密合强度均显著提高，能够超过在充分赋予半导体模块耐热、耐久性的方面成为目标值的25MPa。
由此可知，通过像这样在利用湿喷砂处理形成了相对较大的凹凸之后，进行氧化处理，进而利用蚀刻处理形成相对微细的凹凸，而使在宽度300μm的范围内求得的平均粗糙度成为0.15μm以上、在宽度3μm的范围内求得的平均粗糙度成为0.02μm以上，能够飞跃性地提高绝缘性基板与密封树脂之间的密合强度。
(试验例2)
使用由氮化铝烧结体形成的陶瓷基板(标准品)，利用除了使湿喷砂处理的条件(处理时间)变化以外与实施例1相同的制造方法，制作在宽度300μm的范围内求得的平均粗糙度改变了的陶瓷基板。此外，在宽度3μm的范围内求得的平均粗糙度除局部以外，均为0.02μm以上。
在这样得到的各个陶瓷基板的表面形成密封树脂28的成型体，在室温下，利用图5所示的方法测量密合强度。在图7中表示该结果。在图7中，黑圆点表示在宽度3μm的范围内求得的平均粗糙度为0.02μm以上的情况，黑三角表示在宽度3μm的范围内求得的平均粗糙度小于0.02μm的情况。图7的纵轴表示在宽度300μm的范围内求得的平均粗糙度的值，横轴表示密合强度(MPa)的值。
如图7所示，具有这样的倾向：在宽度300μm的范围内求得的平均粗糙度越高，则越能提高密合强度。然而，具有这样的倾向：在宽度300μm的范围内求得的平均粗糙度接近2μm时，密合强度不会进一步提高。
因而可知，在宽度300μm的范围内求得的平均粗糙度优选为0.15μm～2.0μm，更优选为0.7μm～2.0μm，最优选为1.1μm～2.0μm。
附图标记说明
11、嵌入式壳体；12、外部端子；13、壳体；14、粘接剂；21、绝缘电路基板；22、金属板；23、绝缘性基板；24、电路图案；25、26、半导体元件；27、接合线；28、密封树脂；29、软钎料；30、晶粒的表面；50、50a、半导体模块。

Claims (10)

1.一种半导体模块，该半导体模块包括：
绝缘性基板；
电路图案，其形成于该绝缘性基板上；
半导体元件，其接合于该电路图案上；以及
密封树脂，其密封所述绝缘性基板、所述电路图案以及所述半导体元件，
该半导体模块的特征在于，
对于所述绝缘性基板的表面的、位于所述绝缘性基板与所述密封树脂密合的部分处的部分，在所述绝缘性基板的剖面中，利用下述方法测量并计算出的、在宽度300μm的范围内求得的平均粗糙度为0.15μm以上，且在宽度3μm的范围内求得的平均粗糙度为0.02μm以上，
其中，平均粗糙度的测量和计算方法为：
利用扫描电子显微镜拍摄所述绝缘性基板的剖面而准备SEM图像，使所述SEM图像二值化而准备表面形状的图像数据，使用图像数值化软件将所述图像数据转换为二维坐标数据，利用下述数学式计算并求得平均粗糙度Za：
[式1]
Figure FDA0002547918370000011
在上述数学式中，Za表示平均粗糙度；Zn表示各n的所述二维坐标数据与平均值之差；N是用测量宽度除以测量间距得到的值，计算宽度300μm的粗糙度时，设为间距＝0.5μm，即N＝600，计算宽度3μm的粗糙度时，设为间距＝0.005μm，即N＝600。
2.根据权利要求1所述的半导体模块，其中，
所述绝缘性基板与所述密封树脂密合的部分包含所述绝缘性基板的周缘部。
3.根据权利要求1或2所述的半导体模块，其中，
对于所述绝缘性基板的表面的、位于所述绝缘性基板与所述密封树脂密合的部分处的部分，在所述绝缘性基板的剖面中，在宽度300μm的范围内求得的平均粗糙度为2μm以下。
4.根据权利要求1～3中任一项所述的半导体模块，其中，
对于所述绝缘性基板的表面的、位于所述绝缘性基板与所述密封树脂密合的部分处的部分，在所述绝缘性基板的剖面中，在宽度300μm的范围内求得的平均粗糙度为0.7μm以上。
5.根据权利要求1～4中任一项所述的半导体模块，其中，
对于所述绝缘性基板的表面的、位于所述绝缘性基板与所述密封树脂密合的部分处的部分，在宽度3μm的范围内求得的平均粗糙度为0.1μm以下。
6.一种半导体模块的制造方法，该半导体模块的制造方法包含：
表面处理工序，调整陶瓷制的绝缘性基板的表面粗糙度；
氧化处理工序，对所述绝缘性基板进行加热处理，使所述绝缘性基板的表面氧化；
钎料涂布工序，在所述绝缘性基板的表面涂布钎料；
金属箔接合工序，借助所述钎料将金属箔与所述绝缘性基板的表面接合；
电路图案形成工序，对所述金属箔和所述钎料进行蚀刻，形成电路图案；
半导体元件安装工序，在所述电路图案上接合半导体元件；以及
密封工序，利用密封树脂将所述绝缘性基板、所述电路图案以及所述半导体元件密封，
该半导体模块的制造方法的特征在于，
所述表面处理工序包含对所述绝缘性基板的表面进行湿喷砂处理而使其表面粗糙化的工序，
所述钎料涂布工序包含不仅对所述绝缘性基板的表面的、要接合所述金属箔的面，还对所述绝缘性基板的表面的、不接合所述金属箔的面且是要与所述密封树脂密合的面涂布钎料的工序，
在所述电路图案形成工序中，对涂布了所述钎料的部分进行蚀刻，由此，将所述绝缘性基板的要与所述密封树脂密合的面设为这样的表面粗糙度：在所述绝缘性基板的剖面中，利用下述方法测量并计算出的、在宽度300μm的范围内求得的平均粗糙度为0.15μm以上，且在宽度3μm的范围内求得的平均粗糙度为0.02μm以上，
其中，平均粗糙度的测量和计算方法为：
利用扫描电子显微镜拍摄所述绝缘性基板的剖面而准备SEM图像，使所述SEM图像二值化而准备表面形状的图像数据，使用图像数值化软件将所述图像数据转换为二维坐标数据，利用下述数学式计算并求得平均粗糙度Za：
[式2]
Figure FDA0002547918370000031
在上述数学式中，Za表示平均粗糙度；Zn表示各n的所述二维坐标数据与平均值之差；N是用测量宽度除以测量间距得到的值，计算宽度300μm的粗糙度时，设为间距＝0.5μm，即N＝600，计算宽度3μm的粗糙度时，设为间距＝0.005μm，即N＝600。
7.根据权利要求6所述的半导体模块的制造方法，其中，
所述绝缘性基板由氮化铝形成。
8.根据权利要求1～5中任一项所述的半导体模块，其中，
所述绝缘性基板为陶瓷制。
9.根据权利要求8所述的半导体模块，其中，
所述绝缘性基板由氮化铝形成。
10.一种绝缘电路基板，该绝缘电路基板具有：
绝缘性基板；
电路图案，其形成于该绝缘性基板上，
该绝缘电路基板的特征在于，
对于所述绝缘性基板的未形成所述电路图案的部分的表面，在所述绝缘性基板的剖面中，利用下述方法测量并计算出的、在宽度300μm的范围内求得的平均粗糙度为0.15μm以上，且在宽度3μm的范围内求得的平均粗糙度为0.02μm以上，
其中，平均粗糙度的测量和计算方法为：
利用扫描电子显微镜拍摄所述绝缘性基板的剖面而准备SEM图像，使所述SEM图像二值化而准备表面形状的图像数据，使用图像数值化软件将所述图像数据转换为二维坐标数据，利用下述数学式计算并求得平均粗糙度Za：
[式3]
Figure FDA0002547918370000041
在上述数学式中，Za表示平均粗糙度；Zn表示各n的所述二维坐标数据与平均值之差；N是用测量宽度除以测量间距得到的值，计算宽度300μm的粗糙度时，设为间距＝0.5μm，即N＝600，计算宽度3μm的粗糙度时，设为间距＝0.005μm，即N＝600。
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