JP7079769B2 - 強誘電体メモリ集積回路及びその操作方法並びに製造方法 - Google Patents

強誘電体メモリ集積回路及びその操作方法並びに製造方法 Download PDF

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JP7079769B2
JP7079769B2 JP2019504796A JP2019504796A JP7079769B2 JP 7079769 B2 JP7079769 B2 JP 7079769B2 JP 2019504796 A JP2019504796 A JP 2019504796A JP 2019504796 A JP2019504796 A JP 2019504796A JP 7079769 B2 JP7079769 B2 JP 7079769B2
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electrode
single crystal
ferroelectric
ferroelectric memory
memory cell
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JP2020533779A (ja
JP2020533779A5 (enExample
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ジアーン、アンチュエン
ジャーン、イエン
バイ、ズーローン
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Fudan University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2019504796A 2017-09-06 2018-02-28 強誘電体メモリ集積回路及びその操作方法並びに製造方法 Active JP7079769B2 (ja)

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CN201710793719.9 2017-09-06
CN201710793719.9A CN107481751B (zh) 2017-09-06 2017-09-06 一种铁电存储集成电路
PCT/CN2018/077485 WO2019047489A1 (zh) 2017-09-06 2018-02-28 铁电存储集成电路及其操作方法和制备方法

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Families Citing this family (11)

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Publication number Priority date Publication date Assignee Title
CN107481751B (zh) 2017-09-06 2020-01-10 复旦大学 一种铁电存储集成电路
CN108417574B (zh) * 2018-03-12 2020-05-12 复旦大学 基于soi的铁电存储器的制造方法
CN109378313B (zh) * 2018-09-23 2020-10-30 复旦大学 一种低功耗三维非易失性存储器及其制备方法
US11646374B2 (en) * 2018-12-26 2023-05-09 Intel Corporation Ferroelectric transistors to store multiple states of resistances for memory cells
CN112310214B (zh) 2019-07-31 2021-09-24 复旦大学 一种非易失性铁电存储器及其制备方法
CN114342075A (zh) * 2019-09-26 2022-04-12 华为技术有限公司 一种存储器、存储器阵列以及存储器的数据读写方法
WO2021184205A1 (zh) * 2020-03-17 2021-09-23 华为技术有限公司 平面存储器、立体存储器以及电子设备
US11398568B2 (en) * 2020-06-17 2022-07-26 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Ferroelectric based transistors
WO2022104742A1 (zh) * 2020-11-20 2022-05-27 华为技术有限公司 一种铁电存储器及电子设备
CN112635665B (zh) * 2020-12-22 2024-07-12 上海复存信息科技有限公司 一种基于多层掩膜套刻的面内岛状铁电阻变存储器单元结构及其制备方法
CN118136073B (zh) * 2024-03-20 2025-01-07 北京超弦存储器研究院 存储装置及其数据读取方法、电子设备

Citations (8)

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JP2002324892A (ja) 2001-04-25 2002-11-08 Hitachi Ltd 強誘電体メモリ
JP2004165351A (ja) 2002-11-12 2004-06-10 Fujitsu Ltd 半導体装置の製造方法
JP2004193258A (ja) 2002-12-10 2004-07-08 Fujitsu Ltd 容量素子、半導体装置およびその製造方法
WO2004107466A1 (ja) 2003-05-08 2004-12-09 Matsushita Electric Industrial Co. Ltd. 電気スイッチおよびそれを用いた記憶素子
JP2005209722A (ja) 2004-01-20 2005-08-04 Seiko Epson Corp 強誘電体膜、強誘電体メモリ、及び圧電素子
WO2007046176A1 (ja) 2005-10-19 2007-04-26 Yamaju Ceramics Co., Ltd. 強誘電体単結晶、それを用いた弾性表面波フィルタ及びその製造方法
JP2010171166A (ja) 2009-01-22 2010-08-05 Sony Corp 半導体装置およびその製造方法
CN105655342A (zh) 2016-02-23 2016-06-08 复旦大学 非易失性铁电存储器及其制备方法和读/写操作方法

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KR100289975B1 (ko) * 1996-07-09 2001-06-01 니시무로 타이죠 반도체장치의제조방법및반도체장치
JP4015968B2 (ja) * 2003-06-09 2007-11-28 株式会社東芝 強誘電体メモリ
JP2009212448A (ja) * 2008-03-06 2009-09-17 Toshiba Corp 半導体記憶装置およびその製造方法
CN104637948B (zh) * 2015-01-24 2017-11-17 复旦大学 非破坏性读出铁电存储器及其制备方法和读/写操作方法
CN104637949B (zh) * 2015-01-24 2017-11-17 复旦大学 非破坏性读出铁电存储器及其制备方法和操作方法
CN105256376B (zh) * 2015-11-18 2017-12-22 中国科学技术大学 一种控制铁电单晶电致形变取向的方法
CN108475523B (zh) * 2016-04-12 2021-10-19 复旦大学 大电流读出铁电单晶薄膜存储器及其制备方法和操作方法
CN107123648B (zh) * 2017-04-12 2020-09-01 复旦大学 一种面内读/写操作铁电忆阻器及其制备方法
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Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
JP2002324892A (ja) 2001-04-25 2002-11-08 Hitachi Ltd 強誘電体メモリ
JP2004165351A (ja) 2002-11-12 2004-06-10 Fujitsu Ltd 半導体装置の製造方法
JP2004193258A (ja) 2002-12-10 2004-07-08 Fujitsu Ltd 容量素子、半導体装置およびその製造方法
WO2004107466A1 (ja) 2003-05-08 2004-12-09 Matsushita Electric Industrial Co. Ltd. 電気スイッチおよびそれを用いた記憶素子
JP2005209722A (ja) 2004-01-20 2005-08-04 Seiko Epson Corp 強誘電体膜、強誘電体メモリ、及び圧電素子
WO2007046176A1 (ja) 2005-10-19 2007-04-26 Yamaju Ceramics Co., Ltd. 強誘電体単結晶、それを用いた弾性表面波フィルタ及びその製造方法
JP2010171166A (ja) 2009-01-22 2010-08-05 Sony Corp 半導体装置およびその製造方法
CN105655342A (zh) 2016-02-23 2016-06-08 复旦大学 非易失性铁电存储器及其制备方法和读/写操作方法

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CN107481751A (zh) 2017-12-15
US11145664B2 (en) 2021-10-12
WO2019047489A1 (zh) 2019-03-14
CN107481751B (zh) 2020-01-10
JP2020533779A (ja) 2020-11-19
CN109791785A (zh) 2019-05-21
US20200243549A1 (en) 2020-07-30
CN109791785B (zh) 2023-03-24
US20210202509A9 (en) 2021-07-01

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