CN114342075A - 一种存储器、存储器阵列以及存储器的数据读写方法 - Google Patents
一种存储器、存储器阵列以及存储器的数据读写方法 Download PDFInfo
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- CN114342075A CN114342075A CN201980099990.XA CN201980099990A CN114342075A CN 114342075 A CN114342075 A CN 114342075A CN 201980099990 A CN201980099990 A CN 201980099990A CN 114342075 A CN114342075 A CN 114342075A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- Non-Volatile Memory (AREA)
Abstract
一种存储器(10)、存储器阵列(200)以及存储器(10)的数据读写方法。其中，存储器(10)包括：第一半导体(101)、第一铁电薄膜(102)、第一写电极(103)、第一读电极(104)以及第二读电极(105)；第一半导体(101)相对的两端分别设置第一读电极(104)与第二读电极(105)；第一铁电薄膜(102)包裹第一半导体(101)的未被第一读电极(104)和第二读电极(105)连接的表面；第一铁电薄膜(102)的外表面与第一写电极(103)连接。通过第一写电极(103)向第一铁电薄膜(102)施加电压，以改变第一铁电薄膜(102)的极化状态。根据第一铁电薄膜(102)不同的极化状态调制第一半导体内电荷分布情况。使得第一半导体(101)在第一读电极(104)与第二读电极(105)施加相同读取电压时，产生不同的电流。
Description
PCT国内申请，说明书已公开。
Claims (19)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/108014 WO2021056299A1 (zh) | 2019-09-26 | 2019-09-26 | 一种存储器、存储器阵列以及存储器的数据读写方法 |
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| CN114342075A true CN114342075A (zh) | 2022-04-12 |
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| CN201980099990.XA Pending CN114342075A (zh) | 2019-09-26 | 2019-09-26 | 一种存储器、存储器阵列以及存储器的数据读写方法 |
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| CN (1) | CN114342075A (zh) |
| WO (1) | WO2021056299A1 (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023213102A1 (zh) * | 2022-05-05 | 2023-11-09 | 华为技术有限公司 | 一种采样装置、相关设备和控制方法 |
| WO2024001574A1 (zh) * | 2022-06-29 | 2024-01-04 | 华为技术有限公司 | 存储器和存取方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013017131A2 (de) * | 2011-07-12 | 2013-02-07 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Integrierte nichtflüchtige speicherelemente, aufbau und verwendung |
| US9196335B2 (en) * | 2013-03-14 | 2015-11-24 | Kabushiki Kaisha Toshiba | Magnetic memory |
| CN107123648B (zh) * | 2017-04-12 | 2020-09-01 | 复旦大学 | 一种面内读/写操作铁电忆阻器及其制备方法 |
| CN107481751B (zh) * | 2017-09-06 | 2020-01-10 | 复旦大学 | 一种铁电存储集成电路 |
-
2019
- 2019-09-26 CN CN201980099990.XA patent/CN114342075A/zh active Pending
- 2019-09-26 WO PCT/CN2019/108014 patent/WO2021056299A1/zh active Application Filing
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023213102A1 (zh) * | 2022-05-05 | 2023-11-09 | 华为技术有限公司 | 一种采样装置、相关设备和控制方法 |
| WO2024001574A1 (zh) * | 2022-06-29 | 2024-01-04 | 华为技术有限公司 | 存储器和存取方法 |
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| Publication number | Publication date |
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| WO2021056299A1 (zh) | 2021-04-01 |
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