JP7027234B2 - ウエーハの加工方法 - Google Patents

ウエーハの加工方法 Download PDF

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Publication number
JP7027234B2
JP7027234B2 JP2018078195A JP2018078195A JP7027234B2 JP 7027234 B2 JP7027234 B2 JP 7027234B2 JP 2018078195 A JP2018078195 A JP 2018078195A JP 2018078195 A JP2018078195 A JP 2018078195A JP 7027234 B2 JP7027234 B2 JP 7027234B2
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JP
Japan
Prior art keywords
wafer
flash memory
layer
semiconductor substrate
divided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018078195A
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English (en)
Japanese (ja)
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JP2019186468A (ja
Inventor
哲一 杉谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2018078195A priority Critical patent/JP7027234B2/ja
Priority to KR1020190034398A priority patent/KR102629098B1/ko
Priority to CN201910293069.0A priority patent/CN110391183A/zh
Priority to TW108113018A priority patent/TWI825091B/zh
Publication of JP2019186468A publication Critical patent/JP2019186468A/ja
Application granted granted Critical
Publication of JP7027234B2 publication Critical patent/JP7027234B2/ja
Active legal-status Critical Current
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2018078195A 2018-04-16 2018-04-16 ウエーハの加工方法 Active JP7027234B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018078195A JP7027234B2 (ja) 2018-04-16 2018-04-16 ウエーハの加工方法
KR1020190034398A KR102629098B1 (ko) 2018-04-16 2019-03-26 웨이퍼의 가공 방법
CN201910293069.0A CN110391183A (zh) 2018-04-16 2019-04-12 晶片的加工方法
TW108113018A TWI825091B (zh) 2018-04-16 2019-04-15 晶圓之加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018078195A JP7027234B2 (ja) 2018-04-16 2018-04-16 ウエーハの加工方法

Publications (2)

Publication Number Publication Date
JP2019186468A JP2019186468A (ja) 2019-10-24
JP7027234B2 true JP7027234B2 (ja) 2022-03-01

Family

ID=68284317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018078195A Active JP7027234B2 (ja) 2018-04-16 2018-04-16 ウエーハの加工方法

Country Status (4)

Country Link
JP (1) JP7027234B2 (ko)
KR (1) KR102629098B1 (ko)
CN (1) CN110391183A (ko)
TW (1) TWI825091B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240004698A (ko) 2021-05-28 2024-01-11 니뽄 다바코 산교 가부시키가이샤 정보 처리 방법, 정보 처리 단말, 및 정보 처리 시스템
CN115770960A (zh) * 2021-11-25 2023-03-10 湖南大学 一种含背金层半导体材料的复合切割工艺
CN114986358B (zh) * 2022-05-27 2024-04-09 深圳市奥伦德元器件有限公司 芯片划片方法、设备、控制器及计算机可读存储介质

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009176849A (ja) 2008-01-23 2009-08-06 Toshiba Corp 積層型半導体装置と半導体記憶装置
JP2013258236A (ja) 2012-06-12 2013-12-26 Disco Abrasive Syst Ltd 接着フィルムの破断方法
JP2015133435A (ja) 2014-01-15 2015-07-23 株式会社ディスコ ウエーハの加工方法
JP2016111293A (ja) 2014-12-10 2016-06-20 株式会社東京精密 ウェハ分割方法及びウェハ分割装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007134454A (ja) * 2005-11-09 2007-05-31 Toshiba Corp 半導体装置の製造方法
JP2013080972A (ja) * 2005-11-10 2013-05-02 Renesas Electronics Corp 半導体装置の製造方法
JP5155030B2 (ja) * 2008-06-13 2013-02-27 株式会社ディスコ 光デバイスウエーハの分割方法
JP2010010595A (ja) * 2008-06-30 2010-01-14 Oki Data Corp 複合半導体装置、プリントヘッド及び画像形成装置
KR101698193B1 (ko) * 2009-09-15 2017-01-19 삼성전자주식회사 3차원 반도체 메모리 장치 및 그 제조 방법
JP6029347B2 (ja) 2012-06-26 2016-11-24 株式会社ディスコ ウエーハの加工方法
US9460966B2 (en) * 2013-10-10 2016-10-04 Applied Materials, Inc. Method and apparatus for dicing wafers having thick passivation polymer layer
JP2015207604A (ja) * 2014-04-17 2015-11-19 株式会社ディスコ ウェーハの加工方法
JP6305853B2 (ja) * 2014-07-08 2018-04-04 株式会社ディスコ ウエーハの加工方法
JP2016058454A (ja) * 2014-09-05 2016-04-21 株式会社東芝 半導体記憶装置
JP2016115800A (ja) * 2014-12-15 2016-06-23 株式会社ディスコ ウエーハの加工方法
JP6716263B2 (ja) * 2016-01-22 2020-07-01 株式会社ディスコ ウエーハの加工方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009176849A (ja) 2008-01-23 2009-08-06 Toshiba Corp 積層型半導体装置と半導体記憶装置
JP2013258236A (ja) 2012-06-12 2013-12-26 Disco Abrasive Syst Ltd 接着フィルムの破断方法
JP2015133435A (ja) 2014-01-15 2015-07-23 株式会社ディスコ ウエーハの加工方法
JP2016111293A (ja) 2014-12-10 2016-06-20 株式会社東京精密 ウェハ分割方法及びウェハ分割装置

Also Published As

Publication number Publication date
CN110391183A (zh) 2019-10-29
JP2019186468A (ja) 2019-10-24
KR20190120701A (ko) 2019-10-24
KR102629098B1 (ko) 2024-01-24
TW201944474A (zh) 2019-11-16
TWI825091B (zh) 2023-12-11

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