JP2021158194A - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP2021158194A JP2021158194A JP2020056179A JP2020056179A JP2021158194A JP 2021158194 A JP2021158194 A JP 2021158194A JP 2020056179 A JP2020056179 A JP 2020056179A JP 2020056179 A JP2020056179 A JP 2020056179A JP 2021158194 A JP2021158194 A JP 2021158194A
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- Prior art keywords
- wafer
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- shaped
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000002093 peripheral effect Effects 0.000 claims abstract description 35
- 230000001681 protective effect Effects 0.000 claims abstract description 12
- 238000012986 modification Methods 0.000 claims description 17
- 230000004048 modification Effects 0.000 claims description 17
- 238000003672 processing method Methods 0.000 claims description 12
- 235000012431 wafers Nutrition 0.000 description 129
- 238000003384 imaging method Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
ウエーハの直径 :φ200mm
デバイス領域の直径 :φ190mm
外周余剰領域の範囲 :φ190mm〜φ200mm
第一のリング状改質層の直径:φ193mm
第二のリング状改質層の直径:φ194mm
パルスレーザー光線の波長 :1342nm
繰り返し周波数 :90kHz
平均出力 :0.6W
チャックテーブルの回転速度:0.5周/秒
パルスレーザー光線の波長 :1342nm
繰り返し周波数 :90kHz
平均出力 :0.6W
チャックテーブルの送り速度:500mm/s
2a:ウエーハの表面
2b:ウエーハの裏面
4:デバイス
6:分割予定ライン
8:デバイス領域
10:外周余剰領域
14:保護部材
24:第一のリング状改質層
26:第二のリング状改質層
28:分割予定ライン改質層
28a:分割予定ライン改質層の始点
28b:分割予定ライン改質層の終点
46:デバイスチップ
Claims (2)
- 複数のデバイスが分割予定ラインによって区画されたデバイス領域と、該デバイス領域を囲繞する外周余剰領域とが表面に形成されたウエーハを個々のデバイスチップに分割するウエーハの加工方法であって、
ウエーハの表面に保護部材を配設する保護部材配設工程と、
ウエーハに対して透過性を有する波長のレーザー光線の集光点をウエーハの裏面から外周余剰領域に対応するウエーハの内部に位置づけてレーザー光線をウエーハに照射し外周余剰領域に沿って第一のリング状改質層と該第一のリング状改質層を囲繞する第二のリング状改質層とを形成するリング状改質層形成工程と、
ウエーハに対して透過性を有する波長のレーザー光線の集光点をウエーハの裏面から分割予定ラインに対応するウエーハの内部に位置づけてレーザー光線をウエーハに照射し分割予定ラインに沿って分割予定ライン改質層を形成する分割予定ライン改質層形成工程と、
ウエーハの裏面を研削して所定の厚みに形成すると共に該分割予定ライン改質層から分割予定ラインに伸長するクラックによってウエーハを個々のデバイスチップに分割する分割工程と、を含み、
該分割予定ライン改質層形成工程において、該分割予定ライン改質層の始点および終点が該第一のリング状改質層と該第二のリング状改質層との間に位置するようにレーザー光線の集光点を位置づけるウエーハの加工方法。 - 該リング状改質層形成工程において形成する該第一のリング状改質層と該第二のリング状改質層との間隔を300〜1000μmに設定する請求項1記載のウエーハの加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020056179A JP7401372B2 (ja) | 2020-03-26 | 2020-03-26 | ウエーハの加工方法 |
KR1020210028252A KR20210120830A (ko) | 2020-03-26 | 2021-03-03 | 웨이퍼의 가공 방법 |
SG10202102605X SG10202102605XA (en) | 2020-03-26 | 2021-03-15 | Wafer processing method |
CN202110306965.3A CN113451117A (zh) | 2020-03-26 | 2021-03-23 | 晶片的加工方法 |
TW110110757A TW202137307A (zh) | 2020-03-26 | 2021-03-25 | 晶圓之加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020056179A JP7401372B2 (ja) | 2020-03-26 | 2020-03-26 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021158194A true JP2021158194A (ja) | 2021-10-07 |
JP7401372B2 JP7401372B2 (ja) | 2023-12-19 |
Family
ID=77809185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020056179A Active JP7401372B2 (ja) | 2020-03-26 | 2020-03-26 | ウエーハの加工方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7401372B2 (ja) |
KR (1) | KR20210120830A (ja) |
CN (1) | CN113451117A (ja) |
SG (1) | SG10202102605XA (ja) |
TW (1) | TW202137307A (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
EP3252806B1 (en) | 2002-03-12 | 2019-10-09 | Hamamatsu Photonics K.K. | Substrate dividing method |
JP5134928B2 (ja) | 2007-11-30 | 2013-01-30 | 浜松ホトニクス株式会社 | 加工対象物研削方法 |
JP5054496B2 (ja) | 2007-11-30 | 2012-10-24 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
US8357996B2 (en) | 2009-11-17 | 2013-01-22 | Cree, Inc. | Devices with crack stops |
JP5988601B2 (ja) | 2012-02-13 | 2016-09-07 | 株式会社ディスコ | 光デバイスウェーハの分割方法 |
-
2020
- 2020-03-26 JP JP2020056179A patent/JP7401372B2/ja active Active
-
2021
- 2021-03-03 KR KR1020210028252A patent/KR20210120830A/ko unknown
- 2021-03-15 SG SG10202102605X patent/SG10202102605XA/en unknown
- 2021-03-23 CN CN202110306965.3A patent/CN113451117A/zh active Pending
- 2021-03-25 TW TW110110757A patent/TW202137307A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
SG10202102605XA (en) | 2021-10-28 |
JP7401372B2 (ja) | 2023-12-19 |
TW202137307A (zh) | 2021-10-01 |
KR20210120830A (ko) | 2021-10-07 |
CN113451117A (zh) | 2021-09-28 |
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