JP2009176849A - 積層型半導体装置と半導体記憶装置 - Google Patents
積層型半導体装置と半導体記憶装置 Download PDFInfo
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Abstract
【解決手段】配線基板上2には第1の半導体素子群11を構成する複数の半導体素子9A〜9Dが階段状に積層されている。第1の半導体素子群11上には第2の半導体素子群14を構成する複数の半導体素子9E〜9Hが第1の半導体素子群11の階段方向とは逆方向に向けて階段状に積層されている。各半導体素子9は金属ワイヤ13、15を介して配線基板2の接続パッド7と電気的に接続されている。階段状に積層された複数の半導体素子9A〜9Hのうち、最上段に位置する半導体素子9Hはその下段に位置する半導体素子9Gより厚い厚さを有する。
【選択図】図2
Description
Claims (5)
- 素子搭載部と接続パッドとを有する配線基板と、
外形の一辺に沿って配列された電極パッドを有する複数の半導体素子を備え、前記複数の半導体素子は前記配線基板の前記素子搭載部上に階段状に積層されている素子群と、
前記素子群を構成する前記複数の半導体素子の前記電極パッドと前記配線基板の前記接続パッドとを電気的に接続する金属ワイヤと、
前記素子群を前記金属ワイヤと共に封止するように、前記配線基板上に形成された封止樹脂層とを具備し、
前記素子群を構成する前記複数の半導体素子のうち、最上段の前記半導体素子の厚さはその下段に位置する前記半導体素子の厚さより厚いことを特徴とする積層型半導体装置。 - 請求項1記載の積層型半導体装置において、
前記素子群は、前記素子搭載部上にパッド配列辺を同方向に向け、かつ前記電極パッドが露出するように階段状に積層された複数の前記半導体素子を備える第1の半導体素子群と、前記第1の半導体素子群上にパッド配列辺を同方向に向け、かつ前記電極パッドが露出するように前記第1の半導体素子群の階段方向とは逆方向に向けて階段状に積層された複数の前記半導体素子を備える第2の半導体素子群とを有することを特徴とする積層型半導体装置。 - 請求項2記載の積層型半導体装置において、
前記第2の半導体素子群を構成する前記複数の半導体素子のうち、最上段の半導体素子の厚さをT1、最下段の半導体素子の厚さをT2、他の半導体素子の厚さをTとし、前記第1の半導体素子群を構成する前記複数の半導体素子のうち、最下段の半導体素子の厚さをT3、他の半導体素子の厚さをTとしたとき、前記第1および第2の半導体素子群はT1=1.1〜1.5T、T2=2.5〜3.5T、T3=1.5〜2.5Tの条件を満足することを特徴とする積層型半導体装置。 - 外部接続端子を備える第1の主面と、素子搭載部と接続パッドとを備え、前記第1の主面とは反対側の第2の主面とを有する配線基板と、
外形の一辺に沿って配列された電極パッドを有する複数のメモリ素子を備え、前記複数のメモリ素子は前記配線基板の前記素子搭載部上にパッド配列辺を同方向に向け、かつ前記電極パッドが露出するように階段状に積層されている第1のメモリ素子群と、
外形の一辺に沿って配列された電極パッドを有する複数のメモリ素子を備え、前記複数のメモリ素子は前記第1のメモリ素子群上にパッド配列辺を同方向に向け、かつ前記電極パッドが露出するように前記第1のメモリ素子群の階段方向とは逆方向に向けて階段状に積層されている第2のメモリ素子群と、
前記第2のメモリ素子群上に積層され、少なくとも外形の一辺に沿って配列された電極パッドを有するコントローラ素子と、
前記第1のメモリ素子群を構成する前記複数のメモリ素子の前記電極パッドと前記配線基板の前記接続パッドとを電気的に接続する第1の金属ワイヤと、
前記第2のメモリ素子群を構成する前記複数のメモリ素子の前記電極パッドと前記配線基板の前記接続パッドとを電気的に接続する第2の金属ワイヤと、
前記コントローラ素子の前記電極パッドと前記配線基板の前記接続パッドとを電気的に接続する第3の金属ワイヤと、
前記第1および第2のメモリ素子群と前記コントローラ素子を前記第1、第2および第3の金属ワイヤと共に封止するように、前記配線基板の前記第2の主面上に形成された封止樹脂層とを具備し、
前記第2のメモリ素子群を構成する前記複数のメモリ素子のうち、最上段の前記メモリ素子の厚さはその下段に位置する前記メモリ素子の厚さより厚いことを特徴とする半導体記憶装置。 - 請求項4記載の半導体記憶装置において、
前記第2のメモリ素子群を構成する前記複数のメモリ素子のうち、最上段のメモリ素子の厚さをT1、最下段のメモリ素子の厚さをT2、他のメモリ素子の厚さをTとし、前記第1のメモリ素子群を構成する前記複数のメモリ素子のうち、最下段のメモリ素子の厚さをT3、他の半導体素子の厚さをTとしたとき、前記第1および第2のメモリ素子群はT1=1.1〜1.5T、T2=2.5〜3.5T、T3=1.5〜2.5Tの条件を満足することを特徴とする半導体記憶装置。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012094800A (ja) * | 2010-02-15 | 2012-05-17 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
US8283210B2 (en) | 2010-01-08 | 2012-10-09 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
JP2019186468A (ja) * | 2018-04-16 | 2019-10-24 | 株式会社ディスコ | ウエーハの加工方法 |
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JP2019161095A (ja) | 2018-03-15 | 2019-09-19 | 東芝メモリ株式会社 | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002093992A (ja) * | 2000-09-13 | 2002-03-29 | Seiko Epson Corp | 半導体装置及びその製造方法 |
WO2006127782A1 (en) * | 2005-05-26 | 2006-11-30 | Sandisk Corporation | Integrated circuit package having stacked integrated circuits and method therefor |
JP2007036104A (ja) * | 2005-07-29 | 2007-02-08 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2007194491A (ja) * | 2006-01-20 | 2007-08-02 | Renesas Technology Corp | 半導体装置、インタポーザチップ、および半導体装置の製造方法 |
-
2008
- 2008-01-23 JP JP2008012217A patent/JP5178213B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002093992A (ja) * | 2000-09-13 | 2002-03-29 | Seiko Epson Corp | 半導体装置及びその製造方法 |
WO2006127782A1 (en) * | 2005-05-26 | 2006-11-30 | Sandisk Corporation | Integrated circuit package having stacked integrated circuits and method therefor |
JP2007036104A (ja) * | 2005-07-29 | 2007-02-08 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2007194491A (ja) * | 2006-01-20 | 2007-08-02 | Renesas Technology Corp | 半導体装置、インタポーザチップ、および半導体装置の製造方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8283210B2 (en) | 2010-01-08 | 2012-10-09 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
US8796074B2 (en) | 2010-01-08 | 2014-08-05 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
US9177936B2 (en) | 2010-01-08 | 2015-11-03 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
US9397072B2 (en) | 2010-01-08 | 2016-07-19 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
JP2012094800A (ja) * | 2010-02-15 | 2012-05-17 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
US8269325B2 (en) | 2010-02-15 | 2012-09-18 | Kabushiki Kaisha Toshiba | Semiconductor storage device and manufacturing method thereof |
US8492885B2 (en) | 2010-02-15 | 2013-07-23 | Kabushiki Kaisha Toshiba | Semiconductor storage device and manufacturing method thereof |
US8603865B2 (en) | 2010-02-15 | 2013-12-10 | Kabushiki Kaisha Toshiba | Semiconductor storage device and manufacturing method thereof |
JP2019186468A (ja) * | 2018-04-16 | 2019-10-24 | 株式会社ディスコ | ウエーハの加工方法 |
KR20190120701A (ko) * | 2018-04-16 | 2019-10-24 | 가부시기가이샤 디스코 | 웨이퍼의 가공 방법 |
JP7027234B2 (ja) | 2018-04-16 | 2022-03-01 | 株式会社ディスコ | ウエーハの加工方法 |
KR102629098B1 (ko) | 2018-04-16 | 2024-01-24 | 가부시기가이샤 디스코 | 웨이퍼의 가공 방법 |
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