JP7022110B2 - 多層吸収体を有する極紫外線マスクブランク、及びその製造方法 - Google Patents
多層吸収体を有する極紫外線マスクブランク、及びその製造方法 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Respiratory Apparatuses And Protective Means (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Description
Claims (13)
- 極紫外線(EUV)マスクブランクを製造する方法であって、
基板を設けることと、
前記基板上に、複数の反射層のペアを含む複数の反射層の積層体を形成することと、
前記複数の反射層の積層体上にキャッピング層を形成することと、
前記キャッピング層上に複数の吸収層の積層体を形成することであって、前記複数の吸収層の積層体が、複数の吸収層のペアを含み、各ペアが、異なる吸光係数(k)値、及び異なる屈折率値(n)を有する2つの異なる吸収材料を含み、前記吸収層のペアが、タンタル(Ta)、窒化タンタル(TaN)、酸窒化タンタル(TaNO)、及びタンタルホウ素酸化物(TaBO)からなる群から選択された吸収材料を含む第1の層と、金(Au)、ニッケル(Ni)、酸化ニッケル(NiO)、酸化銀(Ag2O)、イリジウム(Ir)、鉄(Fe)、二酸化スズ(SnO2)、コバルト(Co)、クロムニッケル合金、Ni8Cr2、酸化スズ(SnO)、アクチニウム(Ac)、ヨウ化セシウム(CsI)、テルル化亜鉛(ZnTe)、クロム(Cr)、窒化クロム(CrN)、及びアンチモン(Sb)からなる群から選択された吸収材料を含む第2の層とを含む、複数の吸収層の積層体を形成することと
を含む方法。 - 前記複数の反射層のペアが、モリブデン(Mo)含有材料及びケイ素(Si)含有材料から選択された材料から作られる、請求項1に記載の方法。
- 前記吸収層のペアが、窒化タンタル(TaN)から選択された吸収材料を含む第1の層、及びニッケル(Ni)から選択された吸収材料を含む第2の層を含む、請求項1に記載の方法。
- 前記第1の層及び前記第2の層が、それぞれ、1nmから5nmの範囲内の厚さを有する、請求項1に記載の方法。
- 極紫外線光が、吸収度に起因して、且つ前記複数の反射層の積層体からの光との破壊的干渉で引き起こされた相変化に起因して吸収されるよう、前記吸収層の前記異なる吸収材料及び厚さが選択される、請求項1に記載の方法。
- 前記複数の吸収層のペアが、第1の吸収材料を含む第1のカソード、及び第2の吸収材料を含む第2のカソードを有する物理的気相堆積チャンバ内で形成される、請求項1に記載の方法。
- 基板、
前記基板上の複数の反射層の積層体であって、反射層のペアを含む複数の反射層を含む、複数の反射層の積層体、
前記複数の反射層の積層体上のキャッピング層、並びに
前記キャッピング層上の複数の吸収層の積層体であって、前記複数の吸収層の積層体が、複数の吸収層のペアを含み、各ペアが、異なる吸光係数(k)値、及び異なる屈折率値(n)を有する2つの異なる吸収材料を含み、前記吸収層のペアが、タンタル(Ta)、窒化タンタル(TaN)、酸窒化タンタル(TaNO)、及びタンタルホウ素酸化物(TaBO)からなる群から選択された吸収材料を含む第1の層と、金(Au)、ニッケル(Ni)、酸化ニッケル(NiO)、酸化銀(Ag2O)、イリジウム(Ir)、鉄(Fe)、二酸化スズ(SnO2)、コバルト(Co)、クロムニッケル合金、Ni8Cr2、酸化スズ(SnO)、アクチニウム(Ac)、ヨウ化セシウム(CsI)、テルル化亜鉛(ZnTe)、クロム(Cr)、窒化クロム(CrN)、及びアンチモン(Sb)からなる群から選択された吸収材料を含む第2の層とを含む、複数の吸収層の積層体
を含む、極紫外線(EUV)マスクブランク。 - 前記複数の反射層が、モリブデン(Mo)含有材料及びケイ素(Si)含有材料から選択される、請求項7に記載の極紫外線(EUV)マスクブランク。
- 前記吸収層のペアは、窒化タンタル(TaN)から選択された吸収材料を含む第1の層、及びニッケル(Ni)から選択された吸収材料を含む第2の層を含む、請求項7に記載の極紫外線(EUV)マスクブランク。
- 前記第1の層及び前記第2の層が、それぞれ、1nmから5nmの範囲内の厚さを有する、請求項7に記載の極紫外線(EUV)マスクブランク。
- 前記第1の層及び前記第2の層が、それぞれ、1nmから3nmの範囲内の厚さを有する、請求項7に記載の極紫外線(EUV)マスクブランク。
- 極紫外線光が、吸収度に起因して、且つ前記複数の反射層の積層体からの光との破壊的干渉で引き起こされた相変化に起因して吸収されるよう、前記吸収層の前記異なる吸収材料及び厚さが選択される、請求項7に記載の極紫外線(EUV)マスクブランク。
- 極紫外線(EUV)マスクブランク作製システムであって、
真空を生成するための基板ハンドリング真空チャンバ、
前記基板ハンドリング真空チャンバ内に搬入された基板を搬送するための、前記真空内の基板ハンドリングプラットフォーム、及び
EUVマスクブランクを形成するために、前記基板ハンドリングプラットフォームによってアクセスされる複数のサブチャンバ
を備え、前記EUVマスクブランクが、
前記基板上の、複数の反射層のペアを含む複数の反射層の積層体、
前記複数の反射層の積層体上のキャッピング層、並びに
前記キャッピング層上の複数の吸収層の積層体であって、前記複数の吸収層の積層体が、複数の吸収層のペアを含み、各ペアが、異なる吸光係数(k)値、及び異なる屈折率値(n)を有する2つの異なる吸収材料を含み、前記吸収層のペアが、タンタル(Ta)、窒化タンタル(TaN)、酸窒化タンタル(TaNO)、及びタンタルホウ素酸化物(TaBO)からなる群から選択された吸収材料を含む第1の層と、金(Au)、ニッケル(Ni)、酸化ニッケル(NiO)、酸化銀(Ag2O)、イリジウム(Ir)、鉄(Fe)、二酸化スズ(SnO2)、コバルト(Co)、クロムニッケル合金、Ni8Cr2、酸化スズ(SnO)、アクチニウム(Ac)、ヨウ化セシウム(CsI)、テルル化亜鉛(ZnTe)、クロム(Cr)、窒化クロム(CrN)、及びアンチモン(Sb)からなる群から選択された吸収材料を含む第2の層とを含む、複数の吸収層の積層体
を含む、極紫外線(EUV)マスクブランク作製システム。
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US15/652,499 | 2017-07-18 | ||
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Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI811037B (zh) | 2016-07-27 | 2023-08-01 | 美商應用材料股份有限公司 | 具多層吸收劑的極紫外遮罩坯料及製造方法 |
TWI821984B (zh) | 2016-07-27 | 2023-11-11 | 美商應用材料股份有限公司 | 具有合金吸收劑的極紫外線遮罩坯料及製造極紫外線遮罩坯料的方法 |
KR20240046295A (ko) * | 2017-06-01 | 2024-04-08 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 디바이스 |
US10890842B2 (en) * | 2017-09-21 | 2021-01-12 | AGC Inc. | Reflective mask blank, reflective mask, and process for producing reflective mask blank |
US10802393B2 (en) * | 2017-10-16 | 2020-10-13 | Globalfoundries Inc. | Extreme ultraviolet (EUV) lithography mask |
US10347486B1 (en) * | 2017-12-19 | 2019-07-09 | International Business Machines Corporation | Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography |
TWI755607B (zh) | 2018-06-22 | 2022-02-21 | 美商應用材料股份有限公司 | 金屬薄膜之催化沉積 |
CN110658676B (zh) * | 2018-06-29 | 2022-10-25 | 台湾积体电路制造股份有限公司 | 极紫外光微影光罩及其制造方法 |
DE102018211596A1 (de) * | 2018-07-12 | 2020-01-16 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung eines reflektierenden optischen Elementes einer Projektionsbelichtungsanlage und reflektierendes optisches Element für eine Projektionsbelichtungsanlage, Projektionsobjektiv und Projektionsbelichtungsanlage |
TWI805795B (zh) * | 2018-07-20 | 2023-06-21 | 美商應用材料股份有限公司 | 基板定位設備與方法 |
US20200041892A1 (en) * | 2018-07-31 | 2020-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet mask and method of manufacturing the same |
TWI835896B (zh) * | 2018-10-26 | 2024-03-21 | 美商應用材料股份有限公司 | 具有後側塗層的極紫外線掩模 |
TW202026770A (zh) * | 2018-10-26 | 2020-07-16 | 美商應用材料股份有限公司 | 用於極紫外線掩模吸收劑的ta-cu合金材料 |
TWI845579B (zh) | 2018-12-21 | 2024-06-21 | 美商應用材料股份有限公司 | 極紫外線遮罩吸收器及用於製造的方法 |
TWI828843B (zh) | 2019-01-31 | 2024-01-11 | 美商應用材料股份有限公司 | 極紫外線(euv)遮罩素材及其製造方法 |
US11249390B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
TW202035792A (zh) | 2019-01-31 | 2020-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收體材料 |
TW202045350A (zh) * | 2019-03-01 | 2020-12-16 | 美商應用材料股份有限公司 | 具有多層吸收體之極紫外光遮罩坯體及製造方法 |
TW202043905A (zh) | 2019-03-01 | 2020-12-01 | 美商應用材料股份有限公司 | 物理氣相沉積系統與處理 |
TWI818151B (zh) | 2019-03-01 | 2023-10-11 | 美商應用材料股份有限公司 | 物理氣相沉積腔室及其操作方法 |
TWI842830B (zh) | 2019-03-01 | 2024-05-21 | 美商應用材料股份有限公司 | 物理氣相沉積腔室與沉積交替材料層的方法 |
JPWO2020184473A1 (ja) * | 2019-03-13 | 2020-09-17 | ||
TWI836072B (zh) | 2019-05-22 | 2024-03-21 | 美商應用材料股份有限公司 | 具有嵌入吸收層之極紫外光遮罩 |
TWI845676B (zh) * | 2019-05-22 | 2024-06-21 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
TWI836073B (zh) * | 2019-05-22 | 2024-03-21 | 美商應用材料股份有限公司 | 極紫外光遮罩坯體及其製造方法 |
TW202104668A (zh) * | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
TW202104667A (zh) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
TW202104617A (zh) * | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
TWI845677B (zh) | 2019-05-22 | 2024-06-21 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
TW202104666A (zh) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
KR102285098B1 (ko) * | 2019-07-12 | 2021-08-04 | 주식회사 에스앤에스텍 | 극자외선용 반사형 블랭크 마스크 및 그 제조방법 |
US11385536B2 (en) * | 2019-08-08 | 2022-07-12 | Applied Materials, Inc. | EUV mask blanks and methods of manufacture |
KR102285099B1 (ko) * | 2020-01-08 | 2021-08-04 | 주식회사 에스앤에스텍 | 극자외선용 반사형 블랭크 마스크 및 포토마스크 |
US11204545B2 (en) * | 2020-01-16 | 2021-12-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV photo masks and manufacturing method thereof |
US11630385B2 (en) | 2020-01-24 | 2023-04-18 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
TW202131087A (zh) | 2020-01-27 | 2021-08-16 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
TW202129401A (zh) | 2020-01-27 | 2021-08-01 | 美商應用材料股份有限公司 | 極紫外線遮罩坯體硬遮罩材料 |
TWI817073B (zh) * | 2020-01-27 | 2023-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩坯體硬遮罩材料 |
TW202141165A (zh) | 2020-03-27 | 2021-11-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
KR20210127851A (ko) * | 2020-04-14 | 2021-10-25 | 삼성전자주식회사 | 극자외선 리소그래피용 위상 반전 마스크 |
TWI836207B (zh) * | 2020-04-17 | 2024-03-21 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
US11300871B2 (en) | 2020-04-29 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
TW202202641A (zh) * | 2020-07-13 | 2022-01-16 | 美商應用材料股份有限公司 | 極紫外線遮罩吸收劑材料 |
US11609490B2 (en) | 2020-10-06 | 2023-03-21 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11513437B2 (en) * | 2021-01-11 | 2022-11-29 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11592738B2 (en) | 2021-01-28 | 2023-02-28 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US20220382148A1 (en) * | 2021-05-28 | 2022-12-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet mask with alloy based absorbers |
US11815803B2 (en) | 2021-08-30 | 2023-11-14 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflector materials |
US11782337B2 (en) | 2021-09-09 | 2023-10-10 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflectors |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003315977A (ja) | 2002-04-25 | 2003-11-06 | Hoya Corp | リソグラフィーマスクブランクの製造方法及び製造装置 |
JP2015008283A (ja) | 2013-05-31 | 2015-01-15 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
US20150212402A1 (en) | 2014-01-30 | 2015-07-30 | Globalfoundries Inc. | Mask structures and methods of manufacturing |
US20160011500A1 (en) | 2014-07-11 | 2016-01-14 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor |
Family Cites Families (152)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4410407A (en) | 1981-12-22 | 1983-10-18 | Raytheon Company | Sputtering apparatus and methods |
JPS6376325A (ja) | 1987-06-30 | 1988-04-06 | Agency Of Ind Science & Technol | X線リソグラフィ−用マスクのx線吸収体膜 |
JP3078163B2 (ja) | 1993-10-15 | 2000-08-21 | キヤノン株式会社 | リソグラフィ用反射型マスクおよび縮小投影露光装置 |
DE19508405A1 (de) | 1995-03-09 | 1996-09-12 | Leybold Ag | Kathodenanordnung für eine Vorrichtung zum Zerstäuben von einem Target-Paar |
US6057237A (en) | 1997-04-29 | 2000-05-02 | Applied Materials, Inc. | Tantalum-containing barrier layers for copper |
US6323131B1 (en) | 1998-06-13 | 2001-11-27 | Agere Systems Guardian Corp. | Passivated copper surfaces |
US6132566A (en) | 1998-07-30 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for sputtering ionized material in a plasma |
US6013399A (en) | 1998-12-04 | 2000-01-11 | Advanced Micro Devices, Inc. | Reworkable EUV mask materials |
TWI267704B (en) | 1999-07-02 | 2006-12-01 | Asml Netherlands Bv | Capping layer for EUV optical elements |
JP3529676B2 (ja) | 1999-09-16 | 2004-05-24 | 株式会社東芝 | 半導体製造装置および半導体装置の製造方法 |
US6562522B1 (en) | 1999-10-29 | 2003-05-13 | Intel Corporation | Photomasking |
JP4397496B2 (ja) | 2000-02-25 | 2010-01-13 | Okiセミコンダクタ株式会社 | 反射型露光マスクおよびeuv露光装置 |
US6583068B2 (en) | 2001-03-30 | 2003-06-24 | Intel Corporation | Enhanced inspection of extreme ultraviolet mask |
US6396900B1 (en) | 2001-05-01 | 2002-05-28 | The Regents Of The University Of California | Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application |
US20030008148A1 (en) | 2001-07-03 | 2003-01-09 | Sasa Bajt | Optimized capping layers for EUV multilayers |
DE10155112B4 (de) | 2001-11-09 | 2006-02-02 | Infineon Technologies Ag | Reflexionsmaske für die EUV-Lithographie und Herstellungsverfahren dafür |
EP1333323A3 (en) | 2002-02-01 | 2004-10-06 | Nikon Corporation | Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same |
JP3806702B2 (ja) | 2002-04-11 | 2006-08-09 | Hoya株式会社 | 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法 |
EP2317382B1 (en) | 2002-04-11 | 2016-10-26 | Hoya Corporation | Reflective mask blank, reflective mask and methods of producing the mask blank and the mask |
US6835503B2 (en) | 2002-04-12 | 2004-12-28 | Micron Technology, Inc. | Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks |
US6641899B1 (en) | 2002-11-05 | 2003-11-04 | International Business Machines Corporation | Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same |
US6913706B2 (en) | 2002-12-28 | 2005-07-05 | Intel Corporation | Double-metal EUV mask absorber |
US6908713B2 (en) | 2003-02-05 | 2005-06-21 | Intel Corporation | EUV mask blank defect mitigation |
JP2004273794A (ja) | 2003-03-10 | 2004-09-30 | Mitsubishi Electric Corp | X線マスクの製造方法およびそれにより製造されたx線マスクを用いた半導体装置の製造方法 |
JP4521753B2 (ja) | 2003-03-19 | 2010-08-11 | Hoya株式会社 | 反射型マスクの製造方法及び半導体装置の製造方法 |
US7033739B2 (en) | 2003-04-24 | 2006-04-25 | Intel Corporation | Active hardmask for lithographic patterning |
US7282307B2 (en) | 2004-06-18 | 2007-10-16 | Freescale Semiconductor, Inc. | Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same |
US20060008749A1 (en) | 2004-07-08 | 2006-01-12 | Frank Sobel | Method for manufacturing of a mask blank for EUV photolithography and mask blank |
US20060024589A1 (en) | 2004-07-28 | 2006-02-02 | Siegfried Schwarzl | Passivation of multi-layer mirror for extreme ultraviolet lithography |
US7407729B2 (en) | 2004-08-05 | 2008-08-05 | Infineon Technologies Ag | EUV magnetic contrast lithography mask and manufacture thereof |
EP1791168A1 (en) | 2004-09-17 | 2007-05-30 | Asahi Glass Company, Limited | Reflective mask blank for euv lithography and method for producing same |
US8575021B2 (en) | 2004-11-22 | 2013-11-05 | Intermolecular, Inc. | Substrate processing including a masking layer |
FR2884965B1 (fr) | 2005-04-26 | 2007-06-08 | Commissariat Energie Atomique | Structure de blanc de masque ajustable pour masque euv a decalage de phase |
US7432201B2 (en) | 2005-07-19 | 2008-10-07 | Applied Materials, Inc. | Hybrid PVD-CVD system |
KR20070036519A (ko) | 2005-09-29 | 2007-04-03 | 주식회사 하이닉스반도체 | 반사형 마스크 |
JP4652946B2 (ja) | 2005-10-19 | 2011-03-16 | Hoya株式会社 | 反射型マスクブランク用基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
US20070090084A1 (en) | 2005-10-20 | 2007-04-26 | Pei-Yang Yan | Reclaim method for extreme ultraviolet lithography mask blank and associated products |
JP4926523B2 (ja) | 2006-03-31 | 2012-05-09 | Hoya株式会社 | 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法 |
KR20080001023A (ko) | 2006-06-29 | 2008-01-03 | 주식회사 에스앤에스텍 | 극자외선 반사형 블랭크 마스크와 포토마스크 및 그제조방법 |
DE102006046000A1 (de) | 2006-09-27 | 2007-08-30 | Schott Ag | EUV Maskenblank und Verfahren zu dessen Herstellung |
TWI427334B (zh) | 2007-02-05 | 2014-02-21 | Zeiss Carl Smt Gmbh | Euv蝕刻裝置反射光學元件 |
KR100879139B1 (ko) | 2007-08-31 | 2009-01-19 | 한양대학교 산학협력단 | 위상 반전 마스크 및 이의 제조방법 |
JP4532533B2 (ja) | 2007-09-18 | 2010-08-25 | アドバンスド・マスク・インスペクション・テクノロジー株式会社 | Euv露光用マスクブランクおよびeuv露光用マスク |
JP5194888B2 (ja) | 2007-09-27 | 2013-05-08 | 凸版印刷株式会社 | 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク及びその製造方法並びに半導体素子の製造方法 |
JP2011505318A (ja) * | 2007-11-30 | 2011-02-24 | コーニング インコーポレイテッド | 低い膨張係数勾配を有する低膨張性ガラス材料 |
KR100972863B1 (ko) | 2008-04-22 | 2010-07-28 | 주식회사 하이닉스반도체 | 극자외선 리소그라피 마스크 및 그 제조 방법 |
JP5541159B2 (ja) | 2008-07-14 | 2014-07-09 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク、および、euvリソグラフィ用反射型マスク |
DE102008042212A1 (de) | 2008-09-19 | 2010-04-01 | Carl Zeiss Smt Ag | Reflektives optisches Element und Verfahren zu seiner Herstellung |
WO2010050359A1 (ja) | 2008-10-30 | 2010-05-06 | キヤノンアネルバ株式会社 | 多層膜スパッタリング装置及び多層膜形成方法 |
US8587662B1 (en) | 2008-11-06 | 2013-11-19 | Target Brands, Inc. | Theft trend analysis and response |
KR101095681B1 (ko) | 2008-12-26 | 2011-12-19 | 주식회사 하이닉스반도체 | 극자외선 리소그래피를 위한 포토마스크 및 그 제조방법 |
WO2010113700A1 (ja) | 2009-04-02 | 2010-10-07 | 凸版印刷株式会社 | 反射型フォトマスクおよび反射型フォトマスクブランク |
EP2264460A1 (en) | 2009-06-18 | 2010-12-22 | Nxp B.V. | Device having self-assembled-monolayer |
JP5766393B2 (ja) | 2009-07-23 | 2015-08-19 | 株式会社東芝 | 反射型露光用マスクおよび半導体装置の製造方法 |
JP5418293B2 (ja) | 2010-02-25 | 2014-02-19 | 凸版印刷株式会社 | 反射型フォトマスクおよび反射型フォトマスクブランクならびにその製造方法 |
JP5590113B2 (ja) | 2010-03-02 | 2014-09-17 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランクおよびその製造方法 |
JP5559948B2 (ja) | 2010-03-12 | 2014-07-23 | Hoya株式会社 | 多層反射膜付基板の製造方法および反射型マスクブランクの製造方法 |
WO2011115131A1 (ja) | 2010-03-16 | 2011-09-22 | 旭硝子株式会社 | Euvリソグラフィ光学部材用基材およびその製造方法 |
KR101625382B1 (ko) | 2010-04-29 | 2016-05-30 | (주)에스앤에스텍 | 극자외선용 반사형 블랭크 마스크, 포토마스크 및 그의 제조방법 |
JP5581797B2 (ja) | 2010-05-11 | 2014-09-03 | 大日本印刷株式会社 | 反射型マスクの製造方法 |
EP2583138B1 (en) | 2010-06-15 | 2020-01-22 | Carl Zeiss SMT GmbH | Mask for euv lithography, euv lithography system and method for optimising the imaging of a mask |
TWI554630B (zh) | 2010-07-02 | 2016-10-21 | 應用材料股份有限公司 | 減少沉積不對稱性的沉積設備及方法 |
US8764995B2 (en) | 2010-08-17 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof |
WO2012026463A1 (ja) | 2010-08-24 | 2012-03-01 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク |
EP2617076B1 (en) | 2010-09-15 | 2014-12-10 | Ricoh Company, Limited | Electromechanical transducing device and manufacturing method thereof |
JP6013720B2 (ja) | 2010-11-22 | 2016-10-25 | 芝浦メカトロニクス株式会社 | 反射型マスクの製造方法、および反射型マスクの製造装置 |
US8426085B2 (en) | 2010-12-02 | 2013-04-23 | Intermolecular, Inc. | Method and apparatus for EUV mask having diffusion barrier |
JP5880449B2 (ja) | 2011-01-26 | 2016-03-09 | 旭硝子株式会社 | フォトマスクの製造方法 |
JP5648558B2 (ja) | 2011-03-30 | 2015-01-07 | 凸版印刷株式会社 | 反射型マスクブランク、及び反射型マスクブランクの製造方法 |
JP2011228743A (ja) | 2011-07-26 | 2011-11-10 | Toppan Printing Co Ltd | 反射型フォトマスクブランク、反射型フォトマスク、ならびにこれを用いたパターン転写方法 |
KR101642617B1 (ko) | 2011-09-28 | 2016-07-25 | 도판 인사츠 가부시키가이샤 | 반사형 노광용 마스크 블랭크 및 반사형 노광용 마스크 |
KR20140099226A (ko) | 2011-11-25 | 2014-08-11 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법 |
JP2013120868A (ja) | 2011-12-08 | 2013-06-17 | Dainippon Printing Co Ltd | 反射型マスクブランクス、反射型マスク、および、それらの製造方法 |
US8691476B2 (en) | 2011-12-16 | 2014-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV mask and method for forming the same |
KR20130085774A (ko) | 2012-01-20 | 2013-07-30 | 에스케이하이닉스 주식회사 | Euv 마스크 |
WO2013152921A1 (en) | 2012-04-12 | 2013-10-17 | Asml Netherlands B.V. | Pellicle, reticle assembly and lithographic apparatus |
US8658333B2 (en) | 2012-06-04 | 2014-02-25 | Nanya Technology Corporation | Reflective mask |
US8962222B2 (en) | 2012-06-13 | 2015-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and method for forming the same |
US8765331B2 (en) | 2012-08-17 | 2014-07-01 | International Business Machines Corporation | Reducing edge die reflectivity in extreme ultraviolet lithography |
US8932785B2 (en) | 2012-10-16 | 2015-01-13 | Advanced Mask Technology Center Gmbh & Co. Kg | EUV mask set and methods of manufacturing EUV masks and integrated circuits |
US9146458B2 (en) | 2013-01-09 | 2015-09-29 | Kabushiki Kaisha Toshiba | EUV mask |
US9442387B2 (en) | 2013-02-01 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet lithography process |
US9812303B2 (en) | 2013-03-01 | 2017-11-07 | Applied Materials, Inc. | Configurable variable position closed track magnetron |
US9135499B2 (en) | 2013-03-05 | 2015-09-15 | Tyco Fire & Security Gmbh | Predictive theft notification for the prevention of theft |
US20140254001A1 (en) | 2013-03-07 | 2014-09-11 | Globalfoundries Inc. | Fabry-perot thin absorber for euv reticle and a method of making |
US9298081B2 (en) | 2013-03-08 | 2016-03-29 | Globalfoundries Inc. | Scattering enhanced thin absorber for EUV reticle and a method of making |
US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
US9310675B2 (en) | 2013-03-15 | 2016-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof |
JP2014229825A (ja) | 2013-05-24 | 2014-12-08 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランクの製造方法および、該マスクブランク用の反射層付基板の製造方法 |
US9091947B2 (en) | 2013-07-19 | 2015-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet light (EUV) photomasks and fabrication methods thereof |
US9134604B2 (en) | 2013-08-30 | 2015-09-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet (EUV) mask and method of fabricating the EUV mask |
JP2015073013A (ja) | 2013-10-03 | 2015-04-16 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランクの製造方法 |
KR101567057B1 (ko) | 2013-11-15 | 2015-11-09 | 주식회사 에스앤에스텍 | 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크 |
US9261774B2 (en) | 2013-11-22 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet lithography process and mask with reduced shadow effect and enhanced intensity |
JP6301127B2 (ja) | 2013-12-25 | 2018-03-28 | Hoya株式会社 | 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
US10279488B2 (en) | 2014-01-17 | 2019-05-07 | Knightscope, Inc. | Autonomous data machines and systems |
US9329597B2 (en) | 2014-01-17 | 2016-05-03 | Knightscope, Inc. | Autonomous data machines and systems |
US11183375B2 (en) | 2014-03-31 | 2021-11-23 | Applied Materials, Inc. | Deposition system with multi-cathode and method of manufacture thereof |
KR20160002332A (ko) | 2014-06-30 | 2016-01-07 | 주식회사 에스앤에스텍 | 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크 |
US9581890B2 (en) * | 2014-07-11 | 2017-02-28 | Applied Materials, Inc. | Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof |
US9690016B2 (en) * | 2014-07-11 | 2017-06-27 | Applied Materials, Inc. | Extreme ultraviolet reflective element with amorphous layers and method of manufacturing thereof |
US9739913B2 (en) | 2014-07-11 | 2017-08-22 | Applied Materials, Inc. | Extreme ultraviolet capping layer and method of manufacturing and lithography thereof |
US9612522B2 (en) | 2014-07-11 | 2017-04-04 | Applied Materials, Inc. | Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor |
US10347485B2 (en) | 2014-09-17 | 2019-07-09 | Hoya Corporation | Reflective mask blank, method for manufacturing same, reflective mask, method for manufacturing same, and method for manufacturing semiconductor device |
US9709884B2 (en) | 2014-11-26 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV mask and manufacturing method by using the same |
US9471866B2 (en) | 2015-01-05 | 2016-10-18 | Tyco Fire and Securtiy GmbH | Anti-theft system used for customer service |
US9588440B2 (en) | 2015-02-12 | 2017-03-07 | International Business Machines Corporation | Method for monitoring focus in EUV lithography |
US9551924B2 (en) | 2015-02-12 | 2017-01-24 | International Business Machines Corporation | Structure and method for fixing phase effects on EUV mask |
KR101726045B1 (ko) | 2015-06-04 | 2017-04-13 | 한양대학교 산학협력단 | 극자외선 노광 공정용 마스크, 및 그 제조 방법 |
TWI694304B (zh) | 2015-06-08 | 2020-05-21 | 日商Agc股份有限公司 | Euv微影術用反射型光罩基底 |
KR101829604B1 (ko) | 2015-08-17 | 2018-03-29 | 주식회사 에스앤에스텍 | 극자외선용 포토마스크 및 그 제조방법 |
KR101772943B1 (ko) | 2015-08-17 | 2017-09-12 | 주식회사 에스앤에스텍 | 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크 |
US9673042B2 (en) | 2015-09-01 | 2017-06-06 | Applied Materials, Inc. | Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers |
US20170092533A1 (en) | 2015-09-29 | 2017-03-30 | Applied Materials, Inc. | Selective silicon dioxide deposition using phosphonic acid self assembled monolayers as nucleation inhibitor |
US10163629B2 (en) | 2015-11-16 | 2018-12-25 | Applied Materials, Inc. | Low vapor pressure aerosol-assisted CVD |
US10431440B2 (en) | 2015-12-20 | 2019-10-01 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
US9791771B2 (en) | 2016-02-11 | 2017-10-17 | Globalfoundries Inc. | Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure |
EP4358119A3 (en) | 2016-03-03 | 2024-07-31 | Applied Materials, Inc. | Improved self-assembled monolayer blocking with intermittent air-water exposure |
JP6739960B2 (ja) | 2016-03-28 | 2020-08-12 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
US10061191B2 (en) | 2016-06-01 | 2018-08-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | High durability extreme ultraviolet photomask |
TWI821984B (zh) | 2016-07-27 | 2023-11-11 | 美商應用材料股份有限公司 | 具有合金吸收劑的極紫外線遮罩坯料及製造極紫外線遮罩坯料的方法 |
TWI811037B (zh) | 2016-07-27 | 2023-08-01 | 美商應用材料股份有限公司 | 具多層吸收劑的極紫外遮罩坯料及製造方法 |
US11926894B2 (en) | 2016-09-30 | 2024-03-12 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
US11011357B2 (en) | 2017-02-21 | 2021-05-18 | Applied Materials, Inc. | Methods and apparatus for multi-cathode substrate processing |
KR102698817B1 (ko) | 2017-03-02 | 2024-08-27 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법 |
US10704139B2 (en) | 2017-04-07 | 2020-07-07 | Applied Materials, Inc. | Plasma chamber target for reducing defects in workpiece during dielectric sputtering |
US10847368B2 (en) | 2017-04-07 | 2020-11-24 | Applied Materials, Inc. | EUV resist patterning using pulsed plasma |
KR20180127197A (ko) | 2017-05-18 | 2018-11-28 | 주식회사 에스앤에스텍 | 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크 |
JP6729508B2 (ja) | 2017-06-29 | 2020-07-22 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
JP6863169B2 (ja) | 2017-08-15 | 2021-04-21 | Agc株式会社 | 反射型マスクブランク、および反射型マスク |
EP3454119B1 (en) | 2017-09-09 | 2023-12-27 | IMEC vzw | Euv absorbing alloys |
US10504705B2 (en) | 2017-09-15 | 2019-12-10 | Applied Materials, Inc. | Physical vapor deposition chamber with static magnet assembly and methods of sputtering |
US10890842B2 (en) | 2017-09-21 | 2021-01-12 | AGC Inc. | Reflective mask blank, reflective mask, and process for producing reflective mask blank |
US10802393B2 (en) | 2017-10-16 | 2020-10-13 | Globalfoundries Inc. | Extreme ultraviolet (EUV) lithography mask |
KR102402767B1 (ko) | 2017-12-21 | 2022-05-26 | 삼성전자주식회사 | 극자외선 마스크 블랭크, 극자외선 마스크 블랭크를 이용하여 제조된 포토마스크, 포토마스크를 이용한 리소그래피 장치 및 포토마스크를 이용한 반도체 장치 제조 방법 |
KR102237572B1 (ko) | 2018-05-02 | 2021-04-07 | 한양대학교 산학협력단 | Euv 리소그래피용 마스크 및 그 제조 방법 |
US20190384156A1 (en) | 2018-06-13 | 2019-12-19 | AGC Inc. | Reflective mask blank, reflective mask, and method of manufacturing reflective mask blank |
TWI821300B (zh) | 2018-06-19 | 2023-11-11 | 美商應用材料股份有限公司 | 具有護罩座的沉積系統 |
JP6636581B2 (ja) | 2018-08-01 | 2020-01-29 | Hoya株式会社 | 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法 |
JP7376278B2 (ja) | 2018-08-16 | 2023-11-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | 固体原料昇華器 |
TW202026770A (zh) | 2018-10-26 | 2020-07-16 | 美商應用材料股份有限公司 | 用於極紫外線掩模吸收劑的ta-cu合金材料 |
TWI828843B (zh) | 2019-01-31 | 2024-01-11 | 美商應用材料股份有限公司 | 極紫外線(euv)遮罩素材及其製造方法 |
TWI836072B (zh) | 2019-05-22 | 2024-03-21 | 美商應用材料股份有限公司 | 具有嵌入吸收層之極紫外光遮罩 |
JPWO2021060253A1 (ja) | 2019-09-26 | 2021-04-01 | ||
TW202129401A (zh) | 2020-01-27 | 2021-08-01 | 美商應用材料股份有限公司 | 極紫外線遮罩坯體硬遮罩材料 |
TWI817073B (zh) | 2020-01-27 | 2023-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩坯體硬遮罩材料 |
TW202141165A (zh) | 2020-03-27 | 2021-11-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
US11300871B2 (en) | 2020-04-29 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11442356B2 (en) | 2020-05-11 | 2022-09-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography mask with an amorphous capping layer |
US11592737B2 (en) | 2020-05-29 | 2023-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV photo masks and manufacturing method thereof |
US11609490B2 (en) | 2020-10-06 | 2023-03-21 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
-
2017
- 2017-07-04 TW TW111127673A patent/TWI811037B/zh active
- 2017-07-04 TW TW106122347A patent/TWI730139B/zh active
- 2017-07-04 TW TW110117665A patent/TWI774375B/zh active
- 2017-07-18 US US15/652,499 patent/US10747102B2/en active Active
- 2017-07-19 JP JP2019503657A patent/JP7022110B2/ja active Active
- 2017-07-19 WO PCT/US2017/042747 patent/WO2018022371A1/en active Application Filing
- 2017-07-19 SG SG11201811396XA patent/SG11201811396XA/en unknown
-
2020
- 2020-03-17 US US16/821,444 patent/US11022876B2/en active Active
-
2021
- 2021-04-12 US US17/227,717 patent/US11754917B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003315977A (ja) | 2002-04-25 | 2003-11-06 | Hoya Corp | リソグラフィーマスクブランクの製造方法及び製造装置 |
JP2015008283A (ja) | 2013-05-31 | 2015-01-15 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
US20150212402A1 (en) | 2014-01-30 | 2015-07-30 | Globalfoundries Inc. | Mask structures and methods of manufacturing |
US20160011500A1 (en) | 2014-07-11 | 2016-01-14 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor |
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WO2018022371A1 (en) | 2018-02-01 |
US20180031964A1 (en) | 2018-02-01 |
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