WO2010050359A1 - 多層膜スパッタリング装置及び多層膜形成方法 - Google Patents
多層膜スパッタリング装置及び多層膜形成方法 Download PDFInfo
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- WO2010050359A1 WO2010050359A1 PCT/JP2009/067719 JP2009067719W WO2010050359A1 WO 2010050359 A1 WO2010050359 A1 WO 2010050359A1 JP 2009067719 W JP2009067719 W JP 2009067719W WO 2010050359 A1 WO2010050359 A1 WO 2010050359A1
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- cathode
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- sensor
- multilayer film
- discharge
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
Definitions
- the present invention relates to a multilayer film sputtering apparatus for continuously forming a multilayer film and a multilayer film forming method using the apparatus.
- a composition in which a recording layer includes an oxide such as CoCrPt—SiO 2 or CoCrPt—TiO 2 is used for a perpendicular recording medium in a current hard disk.
- an oxide such as CoCrPt—SiO 2 or CoCrPt—TiO 2
- a multilayer film structure such as Fe / Pt or Co / Pt, which are High-Ku materials, will be formed.
- the cathode units corresponding to the number of layers are necessary.
- a sputtering apparatus for forming such a multilayer film a configuration example of an apparatus disclosed in Patent Document 1 is shown in FIGS. 5A to 5C and FIG. 6 and will be briefly described.
- FIG. 5A is a schematic diagram showing a cross-sectional structure perpendicular to the substrate transport direction in the sputtering chamber 101.
- rotating cathode units 103 are rotatably attached to two side walls of the sputtering chamber 101, respectively, and discharge is generated on both sides of the carrier 102 that holds the two substrates 122, thereby the two substrates 122.
- a laminated film is formed on both surfaces simultaneously.
- the substrate 122 is held on the carrier 102 by, for example, three support claws 121, and the carrier 102 is transferred to each processing chamber by a known transfer mechanism.
- FIG. 5C is a plan view of the rotating cathode unit 103 as viewed from the direction of the substrate 122.
- the rotating cathode unit 103 includes a CoB target 132 and a Pd target 133 and a lamp heater (heating processing mechanism) 134 for heating the substrate 122 mounted on the same circumference with respect to the rotation center. ing.
- a partition plate 131 is provided between the targets 132 and 133 and the lamp heater 134 to prevent mutual interference and contamination.
- FIG. 6 is a cross-sectional view taken along the line AA ′ of FIG. 5C for explaining the detailed structure and mechanism of the rotary cathode unit 103 in detail.
- the surface treatment mechanisms the lamp heater 134 in FIG. 6
- the substrate 122 is attached around the rotation center body 130 of the rotary cathode unit 103.
- a substrate holder carrier 102 that holds one or more substrates 122 is disposed to face the targets 132 and 133 and the lamp heater 134, and the rotation center body 130 or the substrate holder is rotated.
- a magnet unit including a central magnet 141, a peripheral magnet 142, and a yoke 143 is disposed at the step portion of the cylindrical outer frame 140 on the back side of the targets 132 and 133, and the central shaft 145 is rotatably supported by a bearing 146.
- a gear 144 is attached to the bottom surface of the yoke 143, and this gear 144 meshes with a gear 119 provided at the tip of the cylindrical member 116 disposed between the cylindrical outer frame 140 and the rotation center body 130.
- the cylindrical outer frame 140 rotates via the gears 118 and 147 (that is, the targets 132 and 133 and the magnet unit revolve around the rotation center body 130), and the gears 119, The magnet unit rotates through 144.
- the cylindrical member 116 is fixed to the rotation center body 130 and the cylindrical outer frame 140 via a bearing 148.
- sputtering is performed while rotating the magnet unit, but the center of the center magnet 141 is shifted from the center axis 145 so that a non-erosion region is not formed at the center of the targets 132 and 133. ing.
- FIGS. 10 and 11 As another conventional multilayer film forming apparatus, a configuration example of an apparatus disclosed in Patent Document 2 is shown in FIGS. 10 and 11 and will be briefly described.
- a first cathode 1001 and a second cathode 1002 each having a first target 1001a and a second target 1002b are arranged around a central axis.
- 11A to 11D are diagrams showing the arrangement and shape of a plurality of targets in the multilayer film forming apparatus shown in FIG.
- a substrate 1003 is provided to be supported by a support member 1004 so as to face the first cathode 1001 and the second cathode 1002.
- 10 and 11A to 11D when a multilayer film is formed on the substrate 1003, the first cathode 1001 and the second cathode 1002 are rotated on the central axis.
- a target material of the first target 1001a and the second target 1002a is formed on the substrate 1003 in a spiral shape.
- the conventional sputtering apparatus shown in FIGS. 5 and 6 has a problem that the maintenance cycle is fast because the usable target is small and the target life is fast.
- the conventional sputtering apparatus has a problem that the target and the magnet unit revolve around the rotation center body and the magnet unit rotates so that the maximum use area of the target is limited. Specifically, since the magnet unit rotates, an area that can be used as a target is a circular area in which the magnet unit rotates.
- a 350 W DC power is applied to the Pd target, and a 10 nm Pd film is deposited on the substrate.
- 400 W of DC power is applied to the Co / Pd target, and a multilayer film of Co (0.3 nm) and Pd (1.0 nm) is continuously deposited for nine periods to produce an artificial lattice film.
- the power supply to the Co / Pd target is stopped and only the Pd film is deposited to 1.0 nm. Therefore, at least three processes are required, and discharge has to be stopped for each process, resulting in a problem that processing time is required.
- the multilayer film forming apparatus shown in FIG. 10 and FIGS. 11A to 11D is effective in forming a multilayer film.
- the first cathode 1001 and the second cathode 1002 are formed on the substrate 1003 while simultaneously rotating at the start of film formation and at the end of film formation, a multilayer formed on the substrate 103 is formed.
- the film becomes a spiral film.
- FIG. 11A For example, when the cathode shown in FIG. 11A is rotated clockwise to form a Co film as the first layer, a Co target (first target 1001a) facing the substrate is formed at the start of film formation and at the end of film formation.
- the film thickness of the Co film is reduced at the start of film formation, and the film thickness of the Co film is greater at the end of film formation than at the start of film formation.
- a Pt film is formed as the second layer film on the Co film formed in this way, similarly, the Pt target facing the substrate at the start of film formation and at the end of film formation. Since the areas are different, the film thickness of the Pt film is thin at the start of film formation, and the film thickness of the Pt film is thicker at the end of film formation than at the start of film formation.
- FIG. 12A schematically shows a process of forming a spiral multilayer film when the multilayer film is formed using the multilayer film forming apparatus shown in FIG. 10 and FIGS. 11A to 11D. That is, the Co film is formed while the cathode is rotated clockwise by 0 to 0.5 (0 to 180 degrees), and the cathode is rotated clockwise by 0.5 to 1 (180 to 360 degrees). ), A Pt film is formed, and a Co film is formed while the cathode is rotated clockwise by 1 to 1.5 (360 degrees to 540 degrees).
- the multilayer film in the portion (region 1201) surrounded by the dotted-line square in FIG. 12B is observed, a part of the multilayer film becomes a spiral film as shown in FIG.
- the spiral film is formed by rotating the Co target region (first target 1001a) and the Pt target region (second target 1002a) as shown in FIG. 11A.
- the position of each target region is accurately detected and a multilayer film is not formed on the substrate.
- the discharge is stopped every time the Co film and the Pt film are formed.
- the multilayer film forming apparatus of FIGS. 10 and 11A to 11D only a spiral multilayer film can be formed on the substrate.
- An object of the present invention is to provide a sputtering apparatus capable of forming a multilayer film that solves the above problems, effectively uses a target, is excellent in productivity, and has a reduced spiral shape, and a multilayer film forming method using the apparatus. It is to provide.
- the present invention is a multilayer film sputtering apparatus, which is a rotatable cathode unit, and is n pieces (n is 2 or more) arranged on the same circumference with respect to the rotation center.
- a cathode unit having a power supply mechanism for supplying power to each cathode, a sensor for detecting the position of the cathode, and a rotation mechanism for rotating the cathode unit. .
- the present invention is a rotatable cathode unit, and n (n is an integer of 2 or more) cathodes arranged on the same circumference with respect to the rotation center, and power for supplying power to each cathode.
- a multilayer film forming method using a sputtering apparatus comprising: a cathode unit having a supply mechanism; a sensor for detecting the position of the cathode; and a rotating mechanism for rotating the cathode unit, the detection being performed by the sensor Based on information, n (where n is an integer of 2 or more) cathodes, and information on the cathodes determined in the determining step based on structural information indicating the structure of the multilayer film to be formed, a step of supplying electric power to the first cathode among n (n is an integer of 2 or more) cathodes to discharge the first cathode to form a first film on a substrate; Detecting at least one of the rotation angle and the number of rotations of the
- a step of stopping the supply of electric power to the first cathode from at least one of the rotation angle and the rotation number, the structure information, and the determination step A step of stopping the supply of power to the second cathode from information on the cathode determined by the sensor and at least one of the rotation angle and the rotation speed of the cathode unit detected in the detection step. It is characterized by having.
- the present invention also relates to a computer-readable recording medium that records a program for causing a computer to execute a method for controlling a sputtering apparatus, wherein the sputtering apparatus is a rotatable cathode unit and has a rotation center.
- n pieces (n is an integer of 2 or more) of cathodes Based on the structure information indicating the structure, n pieces (n is an integer of 2 or more) of cathodes based on the cathode information determined in the determining step.
- a step of starting discharge of the first cathode, a step of measuring at least one of the rotation angle and the number of rotations of the cathode unit based on the information detected by the sensor, and the structure information From the cathode information determined in the determining step and at least one of the rotation angle and the number of rotations of the cathode unit measured in the measuring step, n (n is an integer of 2 or more) cathodes.
- the structure information Of starting the discharge of the second cathode, the structure information, the information of the cathode determined in the determining step, the rotation angle of the cathode unit measured in the measuring step, and The step of stopping the discharge of the first cathode from at least one of the rotational speeds, the structural information, and the cathode determined in the determining step And de information, from at least one rotation angle and rotation speed of said cathode units being measured in the step of the measurement, characterized in that a step of stopping the second cathode discharge.
- the utilization efficiency of the target is improved, and a multilayer film having no spiral shape can be formed in a shorter time, and the multilayer film can be provided with high productivity. Become.
- FIG. 3 is a schematic plan view showing a multilayer film forming process using the cathode unit shown in FIGS. 1 and 2. It is a cross-sectional schematic diagram of an example of the multilayer film formed by this invention. It is a schematic diagram which shows the structure of the conventional sputtering device. It is a front view of the conventional carrier holding the substrate. It is the top view which looked at the rotation cathode unit of the sputtering device shown to FIG. 5A from the board
- FIG. 7 It is a cross-sectional schematic diagram showing the configuration of the rotating cathode unit of the sputtering apparatus, and is a cross-sectional view taken along the line AA ′ of FIG. 5C. It is a figure which shows the timing chart for demonstrating the control image of the film-forming process which concerns on one Embodiment of this invention. It is a figure which shows the relationship between the film thickness of the laminated film obtained by control shown in FIG. 7, and the rotation angle (elapsed time) of a cathode unit. It is a figure which shows the timing chart for demonstrating the control image of the film-forming process which concerns on one Embodiment of this invention.
- FIG. 1 It is a figure which shows the timing chart for demonstrating the control image of the film-forming process which concerns on one Embodiment of this invention. It is a figure which shows the structural example of the conventional multilayer film forming apparatus. It is a figure which shows an example of the arrangement
- FIG. 1 is a configuration example of a cathode unit in a preferred embodiment of a multilayer film sputtering apparatus of the present invention, and is a schematic cross-sectional view of a surface including a rotation axis.
- a cathode unit corresponds to the rotating cathode unit 103 of FIG. 5A, and the other parts are the same as those of the rotating cathode unit 103, and thus the description thereof is omitted.
- Such a cathode unit is arranged in a sputtering chamber as in the conventional sputtering apparatus, and the sputtering apparatus of the present invention includes the cathode unit, the sputtering chamber, and a substrate holder for holding a substrate on which a multilayer film is formed.
- the cathode unit 30 includes an insulator 4, a magnet unit 6, a refrigerant flow path forming plate 8, a refrigerant flow path 9, a backing plate 10 for placing a target, an adhesion preventing plate 11, and a bottom plate 19. ing.
- FIG. 2 is a schematic plan view of the cathode unit of FIG. 1 viewed from the substrate side (above the paper surface).
- cathodes 7a and 7b are arranged with a predetermined gap as shown in FIG. 1, and a partition plate 20 is provided between the cathodes 7a and 7b.
- the partition plate 20 the sputtered particles generated from the target attached to one cathode (for example, cathode 7a) face the target attached to the other cathode (for example, cathode 7b). It can suppress entering into a substrate surface.
- the partition plate 20 is provided, but it may not be provided. Further, it is not necessary to provide a gap between the cathodes 7a and 7b.
- n (n is an integer of 2 or more) cathodes are attached to the cathode unit 30.
- a form having two cathodes 7a and 7b is shown.
- the cathodes 7a and 7b are arranged on the same circumference with respect to the rotation center of the cathode unit 30, and targets made of different materials are attached to the cathodes 7a and 7b at the time of sputtering.
- the target attached to the cathode 7a is a Co target
- the target attached to the cathode 7b is a Pt target.
- a refrigerant flow path forming plate 8 for cooling the cathodes 7a and 7b via the backing plate 10 is provided at the rear part of the cathodes 7a and 7b (on the side opposite to the substrate).
- a refrigerant inflow pipe and a refrigerant outflow pipe are connected to the refrigerant flow path forming plate 8, and a refrigerant (for example, water) is supplied to the refrigerant flow path 9 from a refrigerant supply unit (not shown).
- a magnet unit 6 having a central magnet 6a, a peripheral magnet 6b, and a yoke 6c is disposed on the insulator 4 at the rear portion of the refrigerant flow path forming plate 8.
- the central magnet 6a and the peripheral magnet 6b are configured to have different polarities, and a closed magnetic field is formed on the surface of each of the cathodes 7a and 7b.
- an area indicated by a solid line 21 is an effective area that can be used as a target at the maximum.
- a line indicated by a broken line 23 is a line in which the vertical magnetic field becomes 0, and erosion of the target proceeds around this line. In the present invention, it is desirable to arrange the magnets 6a and 6b so that a non-erosion region is not formed in the region indicated by the broken line 23 in each target.
- the region indicated by the solid line 22 is the effective region of the target in the above-described conventional sputtering apparatus.
- the effective portion of the magnet unit is circular, and the effective area of the target is also circular correspondingly.
- the sputtering is performed while rotating the cathode unit 30, but the magnet unit 6 does not rotate in the cathode unit 30. Therefore, it is not necessary to make the effective area of the target circular within the cathode unit, and the magnet may be arranged so that the effective area is maximized, and the cathode may be arranged. As a result, the effective area of the target can be made wider than before, and the erosion area can be made larger.
- the cathodes 7a and 7b are semicircular, and the central magnet 6a and the peripheral magnet 6b are arranged so that the effective area of the target is maximized in each area. do it.
- the cathodes 7a and 7b, the packing plate 10, and the refrigerant flow path forming plate 8 are integrally fixed to the bottom plate 19, and a protection plate 11 is provided on each side surface.
- the deposition preventing plate 11 is for preventing the deposition material from adhering to the cathodes 7 a and 7 b, the packing plate 10, and the refrigerant flow path forming plate 8.
- a rotation center body 17 and a rotary joint 1 are connected to the cathodes 7 a and 7 b, the packing plate 10, and the refrigerant flow path forming plate 8 that are integrally fixed to the bottom plate 19 as a rotation mechanism of the cathode unit 30.
- the slip ring 2 is a power supply mechanism for enabling different powers to be independently supplied to the cathodes 7a and 7b.
- the slip ring 2 is rotatably connected to the rotation center body 17 through the magnetic seal 3.
- a motor 15 is connected to the rotation center body 17 through gears 16 and 18. Accordingly, when the rotation center body 17 is rotated by driving the motor 15, the cathode unit 30 is rotated along with the rotation.
- the circular light shielding plate 13 is attached to the rotation center body 17 and rotates together with the rotation center body 17.
- a black body portion 26 shown in FIG. 3, which will be described later, is formed on the back side (sensor 14 side) of the light shielding plate 13.
- the black body portion 26 rotates in synchronization with the rotation of the cathode unit 30. It is configured.
- the black body portion 26 is detected by the sensor 14.
- the sensor 14 may be any sensor as long as it can discriminate between the black body portion 26 and the black body portion shown in FIG. 3.
- a FU-6F optical fiber manufactured by Keyence is preferably used.
- a process controller 31A0 shown in FIG. 13 is connected to the sensor 14 that detects the black body portion 26.
- the motor 15 and the power source 32 are connected to the process controller 31A0. That is, the process controller 31A0 receives an input signal from the sensor 14, operates a program programmed to operate a series of operations of discharge images (control images) shown in FIGS. By transmitting instructions to the motor 15 and the power supply 32 as appropriate, they can be output to the sputtering apparatus.
- the configuration of the process controller 31A0 can basically have the configuration of the computer 31A1, for example.
- the computer 31A1 has an input unit 31A2 for inputting data from various devices such as the sensor 14, and a storage medium 31A3 having programs and data.
- the computer 31A includes a processor 31A4 that executes processing operations such as various operations, control, and determination, and an output unit 31A5 that outputs operation instructions from the processor 31A4 to each device.
- the process controller 31A0 controls corresponding devices (the sensor 14, the motor 15, the power source 32, etc.).
- the input unit 31A2 can include a keyboard or various switches for inputting predetermined commands or data.
- an instruction can be input from the outside (for example, a user).
- an instruction can be input from the outside (for example, a user).
- the program stored in the storage medium 31A3 includes a program for performing an operation of a discharge image shown in FIGS.
- the program of the present invention is configured by a program for causing the process controller 31A0 as a computer to execute, for example, the following steps.
- Step a The process controller 31A0 discriminates between the cathode 7a and the cathode 7b based on the information detected by the sensor 14.
- Step b The process controller 31A0 transmits an operation instruction to the power source 32 based on the information determined in the above step a, and controls the power source 32 so that power is supplied to the cathode 7a via the slip ring 2.
- the discharge of 7a is started.
- Step c The process controller 31A0 acquires at least one of the rotation angle and the rotation speed of each of the cathodes 7a and 7b detected by the sensor 14 from the start to the end of film formation, and stores them in the storage medium 31A3.
- Step d Discharge of the cathode 7b from at least one of the information detected by the sensor 14 and at least one of the rotation angle and the rotation speed from the start to the end of the film formation on the cathode 7b stored in the storage medium 31A3
- the start timing (for example, time and elapsed time) is determined.
- Step e The process controller 31A0 transmits an operation instruction to the power source 32 according to the timing determined in step d and controls the power source 32 so that power is supplied to the cathode 7b via the slip ring 2, and the cathode The discharge of 7b is started.
- Step f The timing at which the process controller 31A0 stops discharging the cathode 7a from at least one of the rotation angle and the number of rotations from the start to the end of film formation on the cathode 7a stored in the storage medium 31A0 Time).
- Step g The discharge timing (for example, time and elapsed time) of the cathode 7b from the rotation angle and the number of rotations from the start to the end of film formation on the cathode 7b stored in the storage medium 31A0 by the process controller 31A0 To decide.
- Step h The process controller 31A0 transmits an operation instruction to the power source 32 according to the timing determined in step f, and controls the power source 32 so that the supply of power to the cathode 7a is stopped. Stop the discharge.
- the process controller 31A0 transmits an operation instruction to the power supply 32 according to the timing determined in step g, and controls the power supply 32 so that the supply of power to the cathode 7b is stopped, so that the cathode 7b is discharged. Stop.
- the steps a to h are merely examples.
- FIG. 4 is a schematic cross-sectional view showing an example of a multilayer film preferably formed in the present invention, which is formed by attaching targets 1 and 2 made of different materials to the cathodes 7a and 7b, respectively.
- targets 1 and 2 in the figure mean films formed by the target 1 and the target 2, respectively.
- the first feature of the present invention is that when a multilayer film as shown in FIG. 4 is formed by sputtering with one cathode unit, the discharge is not stopped every time the film is formed as in the prior art.
- the point is to continuously form a multilayer film while rotating. Thereby, it is possible to provide a multilayer film forming apparatus having excellent productivity.
- such continuous film formation is possible because two or more cathodes 7 a and 7 b are arranged so as to surround the rotation center of the cathode unit 30. *
- a second feature of the present invention is that a sensor 14 capable of detecting the rotational positions of two or more cathodes 7a and 7b is provided, and a membrane (cathode 7a, The process controller 31A0 is provided and controlled so that the discharge can be started every time 7b) is formed. Further, in the present invention, since the magnet unit 6 disposed at the rear part of each cathode 7a, 7b does not rotate in the cathode unit 30, the effective area of the target attached to each cathode 7a, 7b is wide, and the multi-layer film is made short in time. It becomes possible to form a film.
- FIG. 3 is a schematic plan view showing a process of continuously forming the multilayer film of FIG. 4 with the cathode unit 30 shown in FIGS. 1 and 2.
- the film formation is performed in the order of process 1 ⁇ process 2 ⁇ process 3 ⁇ process 4. Proceed in order and return to step 1 again.
- reference numeral 25 denotes a detection position of the sensor 14.
- the black body portion 26 is provided on the back side of the light shielding body 13 shown in FIG. 1 and is shown in a state of being superimposed on the cathode unit in FIG. 2 for convenience.
- a sensor 14 is disposed at the rear of the cathodes 7a and 7b, and the sensor 14 is fixed to the apparatus.
- the region facing the sensor 14 is blackened to form a blackbody portion 26 and the other semicircular portion is made of metal
- the muk metal part 27
- the position of the cathode is detected by the sensor 14 and the black body portion 26.
- the process controller 31A0 allows the cathode facing the sensor 14 to be the cathode 7b when the amount of light detected by the sensor 14 is relatively small.
- the black body part 26 arranged in association with the cathode 7b can be said to be a marker for detecting the cathode 7b
- the metal part 27 can also be said to be a marker for detecting the cathode 7a.
- the sensor 14 determines whether the cathode facing the sensor 14 is the cathode 7a or the cathode 7b.
- the sensor 14 is provided, A black body portion 26 as a marker and a metal portion 27 as a second marker are provided.
- the black body portion 26 serving as the first marker rotates in synchronization with the cathode unit 30 and is disposed so as to overlap the cathode 7b.
- the metal part 27 as the second marker rotates in synchronization with the cathode unit 30 and is disposed so as to overlap the cathode 7a.
- the first marker and the second marker have different reflectances. Therefore, the process controller 31A0 can determine the cathode facing the sensor 14 based on the amount of light detected by the sensor 14.
- the black body portion 26 and the metal portion 27 are used as the first marker and the second marker, but are not limited thereto.
- the cathode is discriminated based on the amount of light by the sensor, so any material may be applied as the first marker and the second marker as long as they have different reflectances.
- each marker may be provided with the same requirements.
- four markers having different reflectances (first reflectance> second reflectance> third reflectance> fourth reflectance) may be provided. That is, it is arranged in association with the first cathode (arranged so as to overlap with the first cathode), is arranged in association with the first marker having the first reflectance, and the second cathode, A second marker having a reflectivity of 2, and a third marker corresponding to the third cathode, and a third marker having a third reflectivity and a fourth cathode.
- a fourth marker having reflectance is provided so as to rotate in synchronization with the cathode unit 30.
- the amount of light reflected from each of the first marker to the fourth marker is detected by the sensor 14, a table in which these amounts of light are associated with each marker is created, and the table is stored in the storage medium 31A3 in advance. Store it.
- the process controller 31A0 can recognize the marker corresponding to the light quantity information with reference to the table based on the light quantity information indicating the light quantity transmitted from the sensor 14, and the cathode facing the sensor 14 can be identified. Can be determined.
- the corresponding marker may be extracted according to the relative magnitude of the light amount detected by the sensor 14. That is, when the amount of light detected by the sensor 14 is relatively large, a table is prepared in which the marker facing the sensor 14 is associated with the first marker. Similarly, in the table, when the light amount detected by the sensor 14 is relatively second largest, the marker facing the sensor 14 is the second marker, and the light amount detected by the sensor 14 is relative. If the third largest marker is the third marker, the marker facing the sensor 14 is the third marker. If the amount of light detected by the sensor 14 is relatively small, the marker facing the sensor 14 is the fourth marker. Associate as a marker. This table is stored in advance in the storage medium 31A3.
- the process controller 31A0 grasps the order of the light quantity information detected by the sensor 14.
- the marker corresponding to the magnitude of the light quantity in the order can be extracted from the table. Therefore, the process controller 31A0 can determine the corresponding cathode.
- the process controller 31A0 starts discharging at the timing when the cathode 7a turns on or off the sensor 14 as shown in step 1 of FIG.
- the cathode 7b after the cathode 7a starts to discharge, the discharge is started when the cathode unit rotates 180 ° [step 3 in FIG. 3].
- This timing can be a time determined from the rotation speed of the cathode unit 30. For example, when the cathode unit 30 rotates at 60 rpm, it rotates once every 1 sec. Therefore, the time required for rotation by 180 ° is 0.5 sec.
- the process controller 31A0 calculates the time required for one rotation from the rotation speed of the cathode unit 30, and stores it in the storage medium 31A3. Therefore, the process controller 31A0 can calculate the elapsed time from the reference time corresponding to the number of rotations (rotation angle) of the cathode unit 30 from a certain reference time based on the time required for one rotation.
- targets of different materials can be placed on the cathode 7a or 7b, when the cathodes 7a and 7b are sequentially discharged in this way, as shown in FIG.
- One layer of each of the target films installed on 7b can be formed.
- the cathode 7b starts discharging at the time when the cathode unit 30 rotates 180 degrees after the cathode 7a starts discharging (step 3 in FIG. 3), so that the film thickness of the laminated film formed on the substrate is as shown in FIG. become that way.
- the film thickness of the laminated film formed on the substrate is affected by the region where the cathode 7a is 0 ° to 180 °.
- the cathode 7b is in a region of 180 to 360 degrees, and the spiral laminated film structure as in Patent Document 2 is not obtained.
- the discharge start position is not detected, the discharge may be started without looking at the on / off timing of the sensor 14.
- FIG. 7 is a diagram illustrating a timing chart for explaining a control image of the film forming process according to the present embodiment.
- FIG. 8 is a film thickness time development diagram of a laminated film when a multilayer film is formed on the substrate using the control image of FIG. 8 is a development view of a portion corresponding to the region 1201 in FIG. 12B.
- the first characteristic point is that the multilayer film is continuously formed while rotating the cathode unit 30 without stopping the discharge every time the film is formed.
- a sensor 14 capable of detecting the rotational positions of two or more cathodes 7a and 7b is provided, and discharge is performed each time a film (cathodes 7a and 7b) is formed according to the rotational positions of the two or more cathodes 7a and 7b.
- the second feature point is that a control mechanism is provided so that the control can be started.
- a laminated film in which a target 1 placed on a cathode 7a and a target 2 placed on a cathode 7b are laminated in this order on a substrate, and each of the target 1 and the target 2 is a laminated film having three layers. A film is formed.
- the metal part 27 corresponds to the cathode 7a
- the black body part 26 corresponds to the cathode 7b. Accordingly, when the amount of light detected by the sensor 14 is relatively large, the cathode facing the sensor 14 is the cathode 7a, and when the amount of light is relatively small, the cathode facing the sensor is the cathode 7b.
- the user operates the input unit 31A2 to input structural information indicating the structure of the multilayer film to be formed.
- the structure information is information indicating that the multilayer film to be formed is a multilayer film in which three layers of the target 1 and the target 2 are formed in the order of the target 1 and the target 2 on the substrate. Therefore, the process controller 31A0 can recognize which target should be deposited in which order on the substrate by analyzing the structure information.
- the process controller 31A0 When the process controller 31A0 receives the input structure information, the process controller 31A0 transmits an operation instruction to the motor 15 to rotate the cathode unit 30. At this time, the black body portion 26 and the metal portion 27 also rotate in synchronization with the cathode unit 30. At this time, the process controller 31A0 can grasp the positions of the cathodes 7a and 7b based on the light amount information transmitted from the sensor 14.
- the process controller 31A0 analyzes the structural information and recognizes that the first target to be deposited on the substrate is the target 1, the process controller 31A0 determines that the cathode that starts discharge first is the cathode 7a. Next, in accordance with the determination, the process controller 31A0 detects the rotational position of the cathode 7a with the sensor 14, and when the detected light amount changes from small to large (timing t1 in FIG. 7), transmits an operation instruction to the power supply 32, The discharge of the cathode 7a is started.
- the timing t1 is set as a reference time, the number of rotations of the cathode unit 30 at the timing t1 is set to 0, and the rotation angle is set to 0 degrees.
- the timing t1 is used as a reference for the rotation speed, rotation angle, and rotation time (elapsed time) of the cathode unit 30.
- the entire cathode unit 30 is rotated while starting the discharge of the cathode 7a. Since the cathode 7b is not discharged when the rotation angle of the cathode unit 30 is 0 to 180 degrees or less, only the target 1 (for example, the target material (Co film)) placed on the cathode 7a is placed on the substrate. Is deposited.
- the process controller 31A0 detects the rotation position of the cathode 7b by the sensor 14 and starts discharging the cathode 7b. That is, the process controller 31A0 detects the rotational position of the cathode 7b with the sensor 14, and when the detected light amount changes from large to small (timing t2 in FIG. 7), it sends an operation instruction to the power source 32 and discharges the cathode 7b. To start. At this time, the discharge of the cathode 7a is continued. However, the region 1201 in FIG.
- the partition plate 20 hardly deposits the target material of the cathode 7a on the substrate, and the target 2 (target 2) placed on the cathode 7b. Material (Pt film) is deposited. This state continues while the rotation angle of the cathode unit 30 is between 180 degrees and 360 degrees.
- the target deposited on the substrate is switched every half rotation of the cathode unit 30. That is, when the cathode unit 30 rotates once (rotation angle is 360 degrees; elapsed time is 1 second), the targets 1 and 2 are each formed in one layer. In this embodiment, three layers each of the targets 1 and 2 are formed. Therefore, the required discharge time (elapsed time) is 3 seconds (the number of revolutions from the start of discharge to the stop of discharge with respect to the cathode unit 30 (“discharge rotation”). 3), and the rotation angle (also called “discharge rotation angle”) is 1080 degrees).
- the process controller 31A0 determines the discharge time (3 seconds) based on the rotational speed 60 rpm of the cathode unit 30. At least one of the discharge rotation speed (three times) and the discharge rotation angle (1080 degrees) is calculated and stored in the storage medium 31A3. In the present embodiment, the rotation speed will be described, but the same can be said for the rotation angle and the discharge time.
- the process controller 31A0 reads the discharge rotation speed (3 times) stored in the storage medium 31A3, and adds 3 discharge rotation speeds to the rotation speed 0 times at the timing t1, which is the discharge start time to the cathode 7a.
- the number of rotations 3.0 of the cathode unit 30 at the timing t3 which is the discharge stop time of the cathode 7a is calculated and stored in the storage medium 31A3.
- the process controller 31A0 then adds the number of revolutions of 3 to the number of revolutions of 0.5 at the timing t2 which is the discharge start time to the cathode 7b, and at the timing t4 which is the discharge stop time of the cathode 7b.
- the number of rotations 3.5 of the cathode unit 30 is calculated and stored in the storage medium 31A3.
- the process controller 31A0 stops the discharge of the cathode 7a.
- the process controller 31A0 Stop the discharge.
- the region 1201 in FIG. 12B faces the cathode 7a, and the partition plate 20 is also present. Therefore, the target of the cathode 7b is on the substrate.
- the material (target 2) is hardly deposited, and the target 1 (Co film film) which is the target material of the cathode 7a is deposited.
- the process controller 31A0 transmits an operation instruction to the power source 32 to stop the discharge of the cathode 7a when the cathode unit 30 rotates three times (1080 degrees) from the timing t1, that is, when the calculated timing t3 is reached.
- the cathode controller 30 rotates 3.5 times (1260 degrees) from timing t1 (when it rotates 3.0 times from timing t2), that is, when the calculated timing t4 is reached
- An operation instruction is transmitted to 32 to stop the discharge of the cathode 7b.
- the process controller 31A0 can acquire the rotation speed (rotation angle or elapsed time) of the cathode unit 30. For example, when the amount of light detected by the sensor 14 changes from large to small, the process controller 31A0 may increase the number of rotations of the cathode unit 30 by one. As described above, the process controller 31A0 measures the rotation speed of the cathode unit 30 based on the information obtained by the sensor 14, thereby changing the rotation speed of the cathode unit 30 during the change of the film thickness to be formed.
- process controller 31A0 can grasp
- a sensor capable of detecting the rotational positions of the cathode 7a and the cathode 7b is provided, and discharge is started and stopped at a position where the substrate faces each of the cathode 7a and the cathode 7b.
- a multilayer film can be formed without forming a spiral film.
- the discharge is stopped at the timing when the cathode 7a turns on or off the sensor 14 in the same manner as at the start, and for the cathode 7b, the cathode unit 30 rotates 180 ° after the discharge of the cathode 7a is turned off.
- the discharge is stopped at the time [Step 1 in FIG. 3].
- the on / off timing of the sensor 14 is unified between on and off at start and stop.
- a uniform film can be formed on the substrate by controlling the positions at the start and stop of discharge.
- the position at the time of stopping discharge may be controlled by time (rotation angle).
- the film thickness of each layer is controlled by controlling the power applied to the discharge power supply that is installed independently. Therefore, the power source 32 has a power source for the cathode 7a and a power source for the cathode 7b.
- 9A and 9B are timing charts for explaining a control image of the film forming process according to the present embodiment. The difference between the control image of FIG. 9A and the control image of FIG. 7 is that the start and stop of discharge of the cathode 7a and the start and stop of discharge of the cathode 7b are controlled independently. Specifically, in the discharge image of FIG.
- the process controller 31A0 detects the position of the cathode 7a by the sensor 14, and the cathode included in the power supply 32.
- the power supply for 7a is operated to start the discharge of the cathode 7a.
- the process controller 31A0 detects the position of the cathode 7a by the sensor 14 and operates the power supply for the cathode 7a included in the power supply 32. To stop the discharge of the cathode 7a.
- the process controller 31A0 starts the discharge of the cathode 7b by operating the power supply for the cathode 7b of the power supply 32 simultaneously with this stop.
- the process controller 31A0 detects the position of the cathode 7b by the sensor 14 and operates the power supply for the cathode 7b included in the power supply 32.
- the discharge of the cathode 7b is stopped.
- the process controller 31A0 stops the discharge of the cathode 7a and at the same time starts the discharge of the cathode 7b. That is, the process controller 31A0 stops the discharge of a certain cathode after rotating the cathode unit 30 by a predetermined number of rotations (rotation angle, elapsed time), and at the same time starts discharging one of the other cathodes. Let Therefore, in the control image shown in FIG. 9A, there is no time for the discharge of the cathode 7a and the cathode 7b to overlap.
- the target material of the cathode 7a is formed (Co film) on the substrate
- the target material (Pt film) of the cathode 7b is not mixed, which is not unique to the film formation image of FIG. There is an effect.
- the process controller 31A0 controls the power supply 32 to start discharging the cathode 7a on which the target 1 is mounted. (The start is set to 0 rotations).
- the discharge to the cathode 7a is continued until the one-turn cathode unit 30 rotates from the number of rotations of 0, one target 1 is formed on the substrate.
- the process controller 31A0 determines that the cathode unit 30 has made one revolution according to the detection result of the sensor 14.
- the process controller 31A0 stops the discharge to the target 7a, and at the same time, controls the power source 32 and the cathode on which the target 2 is placed 7b is started (at this time, the number of revolutions of the cathode unit 30 is one).
- the number of revolutions of the cathode unit 30 is one.
- the control image shown in FIG. 9B is the same as that in FIG. 9A in that the film thickness of each layer is controlled independently.
- the control image shown in FIG. 9A is different from the control image shown in FIG. 9A in that discharge of the cathode 7a is started. After the film is formed on the substrate and the discharge of the cathode 7a is stopped, the discharge of the cathode 7b is started after taking a certain time interval.
- discharge image discharge image
- the control image of FIG. 9B is different from the control image of FIG. 9A in that when the rotation angle of the cathode unit 30 is from a rotation position (one rotation) of 360 degrees to a rotation position of 540 degrees (1.5 rotations). Neither 7a nor the cathode 7b is discharged.
- the process controller 31A0 detects the position of the cathode 7b by the sensor 14 and operates the power supply for the cathode 7b included in the power supply 32 to operate the cathode. The discharge of 7b is started.
- the process controller 31A0 detects the position of the cathode 7b by the sensor 14 and operates the power supply for the cathode 7b included in the power supply 32. Then, the discharge of the cathode 7b is stopped.
- the cathode unit 30 is at a rotation position of 1080 degrees (3 rotations) from a rotation position of 900 degrees (2.5 rotations)
- neither the cathode 7a nor the cathode 7b is discharged. In this way, in the control image shown in FIG.
- a predetermined time (a predetermined rotation speed or a predetermined rotation angle of the cathode unit 30) during which neither the cathode 7a nor the cathode 7b is discharged is set and film formation is performed. Therefore, it is considered most effective when forming a non-spiral multilayer film in which impurities on the substrate are further reduced.
- the process controller 31A0 can recognize how many targets are provided from the structure information, it is possible to construct a control image as shown in FIGS. 9A and 9B.
- the cathode unit 30 When the film of the target 1 is laminated at the end of the multilayer film, the cathode unit 30 may be further rotated half a turn at the end of the above process to turn on the discharge to the cathode 7a. Further, when increasing the film thickness per layer of the multilayer film, the rotation speed of the cathode unit 30 may be lowered and the same control as described above may be performed. Alternatively, only the cathode 7a is discharged several times, and after the discharge of the cathode 7a is stopped, only the cathode 7b is discharged several times. This discharge of the cathodes 7a and 7b is repeated as many times as desired. All the discharges are controlled by the sensor 14 as described above.
- the plurality of cathodes 7a and 7b are simultaneously discharged to simultaneously sputter from the targets attached to both cathodes. can do.
- Example 2 In this example, a Pd target was attached to the cathode 7a, a Co target was attached to the cathode 7b, and Pd / (Co / Pd) ⁇ 9 / Pd was formed.
- the sensor 14 shown in FIG. 1 detects the contact between the cathode 7b provided with the black body portion 26 and the cathode 7a provided with no black body portion 26. Located in the part. The sensor 14 senses this state, and the process controller 31A0 determines that the discharge of the cathode 7a has started.
- the process controller 31A0 determines that the discharge is continued, Discharging continued.
- Step 3 of FIG. 3 when the cathode 7b is rotated by 180 °, the sensor 14 detects the contact portion between the cathode 7b provided with the black body portion 26 and the cathode 7a provided with no black body portion 26. Located in. The sensor 14 senses this state, and the process controller 31A0 determines that the discharge of the cathode 7b has started, and also starts to discharge the Co target of the cathode 7b. When the cathode unit 30 was rotated 9.5 times (3420 °), nine layers of Cd and Pd were formed.
- the cathode 7b provided with the black body portion 26 and the cathode 7a not provided with the black body portion 26 pass through the detection position 25 of the sensor 14 9.5 times. To do.
- the sensor 14 detects the state of passing 9.5 times, and the process controller 31A0 inputs to a separately provided computer control circuit so as to determine that the discharge of the cathode 7b is stopped. Thereby, the discharge of the Co target of the cathode 7b was stopped thereafter.
- the cathode unit 30 Since the discharge of the Pd target of the cathode 7a continues even after the discharge of the Co target of the cathode 7b is stopped, the cathode unit 30 was rotated half a turn (180 degrees) so that one Pd layer could be formed. The sensor 14 senses this state, and the process controller 31A0 determines that the discharge of the cathode 7a is stopped. Thereafter, the discharge of the Pd target of the cathode 7a was stopped.
- the present invention can be applied to a system composed of a plurality of devices (for example, a computer as a process controller, an interface device, a reader, a printer, a multilayer film sputtering apparatus, etc.), and also includes a device (including a process controller). It is also possible to apply to a multilayer film sputtering apparatus.
- a computer as a process controller, an interface device, a reader, a printer, a multilayer film sputtering apparatus, etc.
- a device including a process controller
- Processing for storing a program for operating the configuration of the above-described embodiment so as to realize the function of the process controller 31A0 of the above-described embodiment in a storage medium, reading the program stored in the storage medium as a code, and executing the program on a computer The method is also included in the category of the above-described embodiment. That is, a computer-readable storage medium is also included in the scope of the embodiments. In addition to the storage medium storing the computer program, the computer program itself is included in the above-described embodiment.
- a storage medium for example, a floppy (registered trademark) disk, a hard disk, an optical disk, a magneto-optical disk, a CD-ROM, a magnetic tape, a nonvolatile memory card, and a ROM can be used.
- processing is not limited to the single program stored in the above-described storage medium, but operates on the OS in cooperation with other software and expansion board functions to execute the operations of the above-described embodiments. This is also included in the category of the embodiment described above.
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Abstract
Description
しかしながら、1週間以上のメンテナンスサイクルの確保という条件下において、多層膜構造を実現させるには、層数分のカソードユニットが必要であった。
このような多層膜を形成するためのスパッタリング装置として、特許文献1に開示されている装置の構成例を図5A~5C,図6に示し、簡単に説明する。
図6に示す従来のスパッタリング装置は、ターゲット132,133及び基板122の表面処理機構(図6においてはランプヒータ134)のそれぞれ少なくとも1つを回転カソードユニット103の回転中心体130の回りに取り付けている。そして、1以上の基板122を保持する基板ホルダー(キャリア102)を前記ターゲット132,133及びランプヒータ134に対して対向配置し、回転中心体130又は基板ホルダーを回転する構成となっている。ターゲット132,133の裏面側の円筒状外枠140の段差部には、中心磁石141、周辺磁石142及びヨーク143からなる磁石ユニットが配置され、その中心軸145がベアリング146により回転可能に支持されている。さらに、ヨーク143底面にはギア144が取り付けられおり、このギア144は、円筒状外枠140と回転中心体130との間に配置された円筒部材116の先端部に設けられたギア119と噛合する。従って、モータ117を回転させると、ギア118、147を介して円筒状外枠140が回転し(即ち、ターゲット132,133及び磁石ユニットは回転中心体130の周りに公転し)、さらにギア119、144を介して磁石ユニットは自転することになる。尚、円筒部材116は、ベアリング148を介して回転中心体130及び円筒状外枠140に固定されている。
従来の他の多層膜成膜装置として、特許文献2に開示されている装置の構成例を図10,図11に示し、簡単に説明する。
しかし、第1のカソード1001および第2のカソード1002を成膜開始時と成膜終了時を同時に行い回転しながら、基板1003上に成膜しているため、基板103上に成膜される多層膜は、螺旋状の膜となる。この点を、図11Aを用いて説明する。例えば、図11Aに示すカソードを右回りに回転し、第1層としてCo膜を成膜する場合、成膜開始時と成膜終了時とでは、基板に対向するCoターゲット(第1のターゲット1001a)の面積が異なるため、成膜開始時は、Co膜の膜厚は薄くなり、成膜終了時は、成膜開始時に比べてCo膜の膜厚は厚くなる。
このようにして成膜されたCo膜の上に、第2層目の膜としてPt膜を成膜すると、同様に、成膜開始時と成膜終了時とでは、基板に対向するPtターゲットの面積が異なるため、成膜開始時は、Pt膜の膜厚は薄くなり、成膜終了時は、成膜開始時に比べてPt膜の膜厚は厚くなる。
このような螺旋状の膜が形成される理由としては、上記した以外に、図11Aに示すようなCoターゲット領域(第1のターゲット1001a)とPtターゲット領域(第2のターゲット1002a)とを回転する場合、それぞれのターゲット領域の位置を正確に検知して基板上に多層膜を成膜していないことが考えられる。更に、Co膜、Pt膜の形成毎に放電を停止していることも考えられる。
いずれにせよ、図10及び図11A~11Dの多層膜成膜装置では、基板上に螺旋状の多層膜しか成膜することができない。
図1において、カソードユニット30は、絶縁体4、磁石ユニット6、冷媒流路形成板8、冷媒流路9、ターゲットを載置するためのバッキングプレート10、防着板11、底板19とを備えている。
なお、図1、2に示す構成では、隔壁板20を設けているが、設けなくても良い。また、カソー7aと7bとの間に間隙を設けなくても良い。
該黒体部26を検知するセンサ14には、図13に示すプロセスコントローラ31A0が接続されている。また、プロセスコントローラ31A0には、モータ15および電源32が接続されている。
すなわち、プロセスコントローラ31A0は、センサ14からの入力信号を受け取り、一連の後述する図7及び図9に示す放電イメージ(制御イメージ)の動作をフローチャートで動作させるようにプログラムされたプログラムを動かし、動作指示を適宜モータ15や電源32に送信することによりスパッタ装置に出力できるようになっている。
工程a:プロセスコントローラ31A0が、センサ14により検知された情報により、カソード7aとカソード7bとを判別する。
工程b:プロセスコントローラ31A0が、上記工程aにより判別された情報により、電源32に動作指示を送信しスリップリング2を介してカソード7aに電力が供給されるように電源32を制御して、カソード7aの放電を開始させる。
工程c:プロセスコントローラ31A0が、センサ14により検知されたカソード7aおよび7bそれぞれの、成膜の開始から終了までの回転角度及び回転数の少なくとも一方を取得し、記憶媒体31A3に記憶する。
工程d:プロセスコントローラ31A0が、センサ14により検知された情報と、記憶媒体31A3に記憶された、カソード7bに対する成膜の開始から終了までの回転角度及び回転数の少なくとも一方から、カソード7bの放電開始のタイミング(例えば、時刻や経過時間など)を決定する。
工程e:プロセスコントローラ31A0が、工程dにて決定されたタイミングに従って、電源32に動作指示を送信しスリップリング2を介してカソード7bに電力が供給されるように電源32を制御して、カソード7bの放電を開始させる。
工程f:プロセスコントローラ31A0が、記憶媒体31A0に記憶された、カソード7aに対する成膜の開始から終了までの回転角度及び回転数の少なくとも一方から、カソード7aの放電停止のタイミング(例えば、時刻や経過時間など)を決定する。
工程g:プロセスコントローラ31A0が、記憶媒体31A0に記憶された、カソード7bに対する成膜の開始から終了までの回転角度及び回転数から、カソード7bの放電停止のタイミング(例えば、時刻や経過時間など)を決定する。
工程h:プロセスコントローラ31A0が、工程fにて決定されたタイミングに従って、電源32に動作指示を送信し、カソード7aへの電力の供給が停止されるように電源32を制御して、カソード7aの放電を停止させる。また、プロセスコントローラ31A0が、工程gにて決定されたタイミングに従って、電源32に動作指示を送信し、カソード7bへの電力の供給が停止されるように電源32を制御して、カソード7bの放電を停止させる。
なお、上記工程a~hは、あくまで一例であることは言うまでもない。
また、本発明では各カソード7a、7bの後部に配置させた磁石ユニット6が、カソードユニット30内において回転しないため、各カソード7a、7bに取り付けたターゲットの有効領域が広く、多層膜を短い時間で成膜することが可能となる。
例えば、第1のマーカ~第4のマーカのそれぞれから反射された光量を、センサ14にてそれぞれ検出し、これら光量と各マーカとを関連付けたテーブルを作成し、該テーブルを予め記憶媒体31A3に格納しておく。これにより、プロセスコントローラ31A0は、センサ14から送信された光量を示す光量情報に基づいて、上記テーブルを参照して該光量情報に対応するマーカを認識することができ、センサ14に対向するカソードを判別することができる。
図7は、本実施形態に係る成膜処理の制御イメージを説明するためのタイミングチャートを示す図である。図8は、図7の制御イメージを用いて、基板上に多層膜を成膜した場合の、積層膜の膜厚時間発展図を示す。なお、図8に示す積層膜の膜厚時間発展図は、図12Bの領域1201に対応する部分の展開図である。
上記のとおり、本実施形態のおいては、カソード7aとカソード7bの回転位置を検知できるセンサを設け、基板がカソード7aとカソード7bのそれぞれと対向した位置で、放電を開始し、また停止するように制御するので、螺旋条の膜を形成することがなく、多層膜を成膜できる。
本実施形態では、1層ずつの膜厚の制御を、独立に設置させた放電用電源の印加パワーを制御して行なう。よって、電源32は、カソード7a用の電源と、カソード7b用の電源とを有している。図9A、9Bは、本実施形態に係る成膜処理の制御イメージを説明するためのタイミングチャートを示す図である。
図9Aの制御イメージが図7の制御イメージと相違する点は、カソード7aの放電開始および放電停止と、カソード7bの放電開始および放電停止とを独立に制御した点にある。具体的には、図9Aの放電イメージでは、カソードユニット30の回転角が0度の回転位置にあるとき、プロセスコントローラ31A0は、センサ14により、カソード7aの位置を検知し、電源32が有するカソード7a用の電源を動作させてカソード7aの放電を開始させる。一方、カソードユニット30の回転角が360度の回転位置(1回転)にあるとき、プロセスコントローラ31A0は、センサ14により、カソード7aの位置を検知し、電源32が有するカソード7a用の電源を動作させてカソード7aの放電を停止させる。プロセスコントローラ31A0は、この停止と同時に電源32が有するカソード7b用の電源を動作させてカソード7bの放電を開始させる。一方、カソードユニット30の回転角が720度の回転位置(2回転)にあるとき、プロセスコントローラ31A0は、センサ14により、カソード7bの位置を検知し、電源32が有するカソード7b用の電源を動作させてカソード7bの放電を停止させる。
このように、図9Bに示す制御イメージでは、カソード7aとカソード7bのいずれも放電させない所定の時間(カソードユニット30の、所定の回転数または所定の回転角)を設定し、成膜するようにしているため、基板上の不純物をより低減した、螺旋状でない多層膜を成膜する場合に、最も有効と考えられる。
また、多層膜の1層当りの膜厚を厚くする場合は、カソードユニット30の回転速度を低速にし、上記と同様な制御をすればよい。もしくは、カソード7aのみを数回転分放電させて、カソード7aの放電停止後、カソード7bのみを数回転分放電させる。このカソード7aと7bの放電を積層したい分繰り返す。全ての放電は上記のようにセンサ14で制御する。
本実施例では、カソード7aにPdターゲットを、カソード7bにCoターゲットを取り付け、Pd/(Co/Pd)×9/Pdを成膜した。
カソードユニットが図3の工程1に示す位置状態である時、図1に示すセンサ14は、黒体部26が設けられたカソード7bと黒体部26とが設けられていないカソード7aの接点の部分に位置する。この状態をセンサ14が感知し、プロセスコントローラ31A0は、カソード7aの放電開始と判断する。不図示のガス導入機構からArガスを10Paになるように導入し、同期させながら、カソード7aのPdターゲットに350WのDC電力を導入すると、放電が開始し、基板上に10nmのPd膜を堆積した。
本発明は、複数の機器(例えばプロセスコントローラとしてのコンピュータ、インターフェース機器、リーダ、プリンタ、多層膜スパッタリング装置など)から構成されるシステムに適用することも、1つの機器からなる装置(プロセスコントローラを含む多層膜スパッタリング装置)に適用することも可能である。
Claims (9)
- 回転可能なカソードユニットであって、回転中心に対し同一円周上に配置されるn個(nは2以上の整数)のカソードと、各カソードにそれぞれ電力を供給する電力供給機構とを有するカソードユニットと、
カソードの位置を検知するセンサと、
前記カソードユニットを回転させる回転機構と
を備えることを特徴とする多層膜スパッタリング装置。 - 前記n個のカソードの各々と対応付けて配置されたn個の部材であって、前記カソードユニットの回転と同期して回転するn個の部材をさらに備え、
前記n個の部材は互いに反射率が異なることを特徴とする請求項1に記載の多層膜スパッタリング装置。 - 前記センサの検知結果に従って、各カソードの放電開始および放電停止を制御する制御手段をさらに備えることを特徴とする請求項1に記載の多層膜スパッタリング装置。
- 請求項1に記載の多層膜スパッタリング装置を用い、前記カソードユニットを回転させながら、成膜する膜に対応するターゲットに電力を供給して多層膜をスパッタリング成膜することを特徴とする多層膜形成方法。
- 回転可能なカソードユニットであって、回転中心に対し同一円周上に配置されるn個(nは2以上の整数)のカソードと、各カソードにそれぞれ電力を供給する電力供給機構とを有するカソードユニットと、
前記カソードの位置を検知するセンサと、
前記カソードユニットを回転させる回転機構と、
を備えるスパッタ装置を用いた多層膜の形成方法であって、
センサにより検知された情報により、n個(nは2以上の整数)のカソードを判別する工程と、
形成すべき多層膜の構造を示す構造情報に基づいて、前記判別する工程にて判別されたカソードの情報により、n個(nは2以上の整数)のカソードのうち第1のカソードに電力を供給して該第1のカソードを放電させ、基板上に第1の膜を形成する工程と、
前記センサにより前記カソードユニットの回転角度及び回転数の少なくとも一方を検知する工程と、
前記構造情報に基づいて、前記判別する工程にて前記センサにより判別されたカソードの情報と、前記検知する工程にて検知されている前記カソードユニットの回転角度及び回転数の少なくとも一方とから、n個(nは2以上の整数)のカソードのうち第2のカソードに電力を供給して該第2のカソードを放電させ、基板上に第2の膜を形成する工程と、
前記構造情報と、前記判別する工程にて前記センサにより判別されたカソードの情報と、前記検知する工程にて検知されている前記カソードユニットの回転角度及び回転数の少なくとも一方とから、前記第1のカソードへの電力の供給を停止する工程と、
前記構造情報と、前記判別する工程にて前記センサにより判別されたカソードの情報と、前記検知する工程にて検知される前記カソードユニットの回転角度及び回転数の少なくとも一方とから、前記第2のカソードへの電力の供給を停止する工程と
を有することを特徴とする多層膜の形成方法。 - 前記第2のカソードを放電させる間、前記第1のカソードも放電させることを特徴とする請求項5に記載の多層膜の形成方法。
- 前記第1のカソードへの電力の供給の停止と同時に、前記第2のカソードへの電力の供給を開始することを特徴とする請求項5に記載の多層膜の形成方法。
- 前記第1のカソードへの電力の供給の停止から、所定時間経過後、または前記カソードユニットが所定の回転数回転した後に、前記第2のカソードへの電力の供給を開始することを特徴とする請求項5に記載の多層膜の形成方法。
- コンピュータに、スパッタ装置の制御方法を実行させるためのプログラムを記録したコンピュータ読み取り可能な記録媒体であって、
前記スパッタ装置は、
回転可能なカソードユニットであって、回転中心に対し同一円周上に配置されるn個(nは2以上の整数)のカソードと、各カソードにそれぞれ電力を供給する電力供給機構とを有するカソードユニットと、
前記カソードの位置を検知するセンサと、
前記カソードユニットを回転させる回転機構とを備え、
前記制御方法は、
センサにより検知された情報により、n個(nは2以上の整数)のカソードを判別する工程と、
形成すべき多層膜の構造を示す構造情報に基づいて、前記判別する工程にて判別されたカソードの情報により、n個(nは2以上の整数)のカソードのうち第1のカソードの放電を開始させる工程と、
前記センサにより検知された情報に基づいて、前記カソードユニットの回転角度及び回転数の少なくとも一方を計測する工程と、
前記構造情報に基づいて、前記判別する工程にて判別されたカソードの情報と、前記計測する工程にて計測されている前記カソードユニットの回転角度及び回転数の少なくとも一方から、n個(nは2以上の整数)のカソードのうち第2のカソードの放電を開始させる工程と、
前記構造情報と、前記判別する工程にて判別されたカソードの情報と、前記計測する工程にて計測されている前記カソードユニットの回転角度及び回転数の少なくとも一方から、前記第1のカソードの放電を停止させる工程と、
前記構造情報と、前記判別する工程にて判別されたカソードの情報と、前記計測する工程にて計測されている前記カソードユニットの回転角度及び回転数の少なくとも一方から、前記第2のカソードの放電を停止させる工程と
を有することを特徴とするコンピュータ読み取り可能な記録媒体。
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