JP6975346B2 - メモリセル、メモリアレイ、及びメモリアレイを形成する方法 - Google Patents
メモリセル、メモリアレイ、及びメモリアレイを形成する方法 Download PDFInfo
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Description
Claims (16)
- 導電ゲートと、
前記導電ゲートに隣接する電荷阻止領域であって、該電荷阻止領域は、酸窒化ケイ素と二酸化ケイ素とを含み、且つ、上面と下面とを有し、前記上面及び前記下面の各々は絶縁性材料と接触している、前記電荷阻止領域と、
前記電荷阻止領域に隣接する電荷蓄積領域と、
前記電荷蓄積領域に隣接するトンネリング領域であって、該トンネリング領域は、第1のトンネリング材料と第2のトンネリング材料とを含み、前記第1のトンネリング材料は、前記電荷蓄積領域に直接接し、且つ、前記上面から前記下面まで高さ方向に伸長し、前記第2のトンネリング材料は、前記第1のトンネリング材料に接し、且つ、前記上面よりも上の高さまで伸長する第1の領域と、前記下面よりも高さ方向下方へ伸長する第2の領域とを有し、前記第1及び第2の領域は、前記絶縁性材料の垂直面と物理的に接触している、前記トンネリング領域と、
前記トンネリング領域に隣接するチャネル材料であって、前記トンネリング領域は、前記チャネル材料と前記電荷蓄積領域との間にあり、前記導電ゲート、前記電荷阻止領域、前記電荷蓄積領域、及び前記トンネリング領域が、凹状の垂直面を有する、前記チャネル材料と、
を含むメモリセル。 - 前記電荷阻止領域は、前記導電ゲートに近接した前記酸窒化ケイ素を含み、且つ、前記酸窒化ケイ素によって前記導電ゲートから離隔された前記二酸化ケイ素を含む、請求項1に記載のメモリセル。
- 前記電荷阻止領域の前記二酸化ケイ素は、前記電荷蓄積領域に直接接する、請求項1に記載のメモリセル。
- 前記電荷蓄積領域は窒化ケイ素を含み、前記窒化ケイ素は、前記電荷阻止領域の前記二酸化ケイ素に直接接する、請求項1に記載のメモリセル。
- 前記電荷阻止領域は、前記導電ゲートと前記電荷蓄積領域との間に約50Åから約150Åまでの範囲内の厚さを有し、前記電荷阻止領域の前記二酸化ケイ素は、前記導電ゲートと前記電荷蓄積領域との間に約10Åから約30Åまでの範囲内の厚さを有する、請求項1に記載のメモリセル。
- 交互の絶縁レベル及びワード線レベルの垂直方向のスタックであって、前記ワード線レベルは、凹状の垂直面を有する導電領域を含み、前記絶縁レベルは実質的に平坦な垂直面を有する、前記スタックと、
前記導電領域に隣接し、且つ、上面及び下面を有する電荷蓄積領域であって、前記上面及び前記下面の各々は前記絶縁レベルの絶縁性材料と接触し、前記電荷蓄積領域の各々は、垂直方向に湾曲した第1の垂直面と、それとは反対側の第2の垂直面とを有する、前記電荷蓄積領域と、
前記電荷蓄積領域と前記導電領域との間の電荷阻止領域であって、該電荷阻止領域の各々は、第3の垂直面と、それとは反対側の第4の垂直面とを有し、前記電荷阻止領域は、酸窒化ケイ素に沿って垂直方向に伸長する二酸化ケイ素を含み、前記二酸化ケイ素は、前記酸窒化ケイ素と前記電荷蓄積領域との間にあり、前記第1、第2、第3、及び第4の垂直面の各々は湾曲している、前記電荷阻止領域と
完全に前記ワード線レベル内にある第1のトンネリング材料と、
前記第1のトンネリング材料に沿って、及び、前記絶縁レベルの前記実質的に平坦な垂直面に沿って伸長し、且つ、前記絶縁レベルの前記実質的に平坦な垂直面と物理的に直接接触している第2のトンネリング材料と、
を含むアセンブリ。 - 前記スタックに沿って垂直方向に伸長するチャネル材料を含み、前記電荷蓄積領域は、前記導電領域と前記チャネル材料との間にある、請求項6に記載のアセンブリ。
- 前記チャネル材料は、前記垂直方向に沿って蛇行し、前記絶縁レベルに沿った前記チャネル材料の区域は内側へ突出し、前記ワード線レベルに沿った前記チャネル材料の区域は外側へ突出する、請求項7に記載のアセンブリ。
- 前記導電領域と前記電荷阻止領域の前記酸窒化ケイ素との間に誘電障壁領域を含む、請求項6に記載のアセンブリ。
- アセンブリを形成する方法であって、
交互の第1及び第2のレベルのスタックを通じて第1の開口部を形成することであって、前記第1のレベルは第1の材料を含み、前記第2のレベルは第2の材料を含む、ことと、
前記第1の開口部に沿って前記第1のレベルの前記第1の材料を凹部加工して間隙を形成することであって、前記間隙は、前記第2のレベルの前記第2の材料の区域の間に垂直方向にあり、前記第2のレベルの前記第2の材料の前記区域は、前記間隙の上方及び下方のレッジである、ことと、
前記間隙に沿って前記第1のレベルの前記第1の材料の縁を酸化して、前記第1の材料の残存部分に沿って電荷阻止領域を形成することと、
前記間隙内に、前記電荷阻止領域に沿って電荷捕獲領域を形成することであって、前記電荷阻止領域及び前記電荷捕獲領域の各々は、湾曲した垂直面を有する、ことと、
前記第1のレベルのみに沿って伸長する第1のトンネリング材料を形成することと、
前記第1の開口部内に、垂直方向に伸長する第2のトンネリング材料を形成することであって、前記第2のトンネリング材料は、前記第2のレベルの前記第2の材料の縁に沿って、及び、前記電荷捕獲領域に沿って伸長する、ことと、
前記第1の開口部内に、前記第2のトンネリング材料に隣接してチャネル材料を形成することと、
前記スタックを通じて第2の開口部を形成することであって、前記第2の開口部は、前記第1の材料の前記残存部分を通じて伸張する、ことと、
前記第1の材料の前記残存部分を除去して、前記第2の開口部に沿って空洞を形成することと、
前記空洞内に導電領域を形成することと、
を含む方法。 - 前記酸化することは、in situ steam generationを利用する、請求項10に記載の方法。
- 前記酸化することは、プラズマを利用する、請求項10に記載の方法。
- 前記第1の材料は窒化ケイ素を含み、前記第2の材料は二酸化ケイ素を含む、請求項10に記載の方法。
- 前記第1の材料は窒化ケイ素を含み、前記電荷阻止領域は酸窒化ケイ素を含む、請求項10に記載の方法。
- 前記チャネル材料は、垂直方向に沿って蛇行し、前記第2のレベルに沿った前記チャネル材料の区域は、前記第1の開口部に対して横方向内側へ突出し、前記第1のレベルに沿った前記チャネル材料の区域は、前記第1の開口部に対して横方向外側へ突出する、請求項10に記載の方法。
- 前記第2のトンネリング材料は、前記第1のトンネリング材料とは組成的に異なる、請求項10に記載の方法。
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