JP6975337B2 - メモリアレイ、及びメモリアレイを形成する方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 55
- 239000000463 material Substances 0.000 claims description 181
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 73
- 238000003860 storage Methods 0.000 claims description 63
- 230000000903 blocking effect Effects 0.000 claims description 51
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 44
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 44
- 230000001681 protective effect Effects 0.000 claims description 37
- 239000000377 silicon dioxide Substances 0.000 claims description 35
- 235000012239 silicon dioxide Nutrition 0.000 claims description 35
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
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- 238000007254 oxidation reaction Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
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- 238000009413 insulation Methods 0.000 claims description 9
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
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- 239000010937 tungsten Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
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- -1 for example Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
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- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-RNFDNDRNSA-N silicon-32 atom Chemical compound [32Si] XUIMIQQOPSSXEZ-RNFDNDRNSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
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- H10B—ELECTRONIC MEMORY DEVICES
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
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- H10B—ELECTRONIC MEMORY DEVICES
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- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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Description
Claims (11)
- 電流を導電するためのチャネルであって、第1のチャネル部分と第2のチャネル部分とを含む前記チャネルと、
第1のゲートを含む第1の導電性構造体と、
第2のゲートを含む第2の導電性構造体と、
前記第1のゲートと前記第1のチャネル部分との間に配置された第1のメモリセル構造体であって、前記第1のメモリセル構造体は、第1の電荷蓄積領域と第1の電荷阻止領域とを含み、前記第1の電荷阻止領域は、前記第1の電荷蓄積領域と前記第1のゲートとの間に配置され、前記第1の電荷阻止領域は酸窒化ケイ素を含む、前記第1のメモリセル構造体と、
前記第2のゲートと前記第2のチャネル部分との間に配置された第2のメモリセル構造体であって、前記第2のメモリセル構造体は、第2の電荷蓄積領域と第2の電荷阻止領域とを含み、前記第2の電荷阻止領域は、前記第2の電荷蓄積領域と前記第2のゲートとの間に配置され、前記第2の電荷阻止領域は酸窒化ケイ素を含む、前記第2のメモリセル構造体と、
前記第1の導電性構造体及び前記第2の導電性構造体の各々に沿って伸長し、且つ、前記第1の導電性構造体及び前記第2の導電性構造体の各々と物理的に直接接触する絶縁性構造体であって、前記第1及び第2のチャネル部分に対して前記第1及び第2の導電性構造体の反対側の端部に配設された前記絶縁性構造体と、
前記第1及び第2のゲートの間に、並びに前記第1及び第2のメモリセル構造体の間に配置された空所と
を含む、アセンブリ。 - 前記空所の外周に沿って絶縁ライナーを含む、請求項1に記載のアセンブリ。
- 前記第1のゲートと前記第1の電荷阻止領域との間に第1の誘電障壁領域を含み、前記第2のゲートと前記第2の電荷阻止領域との間に第2の誘電障壁領域を含む、請求項1に記載のアセンブリ。
- 前記第1の電荷阻止領域は、前記酸窒化ケイ素に沿って二酸化ケイ素を含み、前記第2の電荷阻止領域は、前記酸窒化ケイ素に沿って二酸化ケイ素を含む、請求項1に記載のアセンブリ。
- 交互の絶縁レベル及びワード線レベルの垂直方向のスタックと、
前記スタックに沿って垂直方向に伸長するチャネル材料と、
前記ワード線レベルに沿ったゲートであって、水平方向に伸長する導電性構造体の一部分である前記ゲートと、
前記ワード線レベルに沿い、前記ゲートと前記チャネル材料との間に配置されたメモリセル構造体であって、前記メモリセル構造体は、電荷蓄積領域と電荷阻止領域とを含み、前記電荷阻止領域は前記電荷蓄積領域と前記ゲートとの間にある、前記メモリセル構造体と、
前記絶縁レベルに沿った空所であって、前記空所の個々は、垂直方向に隣接する一対の前記ゲートの間の第1の領域と、垂直方向に隣接する一対の前記電荷蓄積領域の間の第2の領域とを含む、前記空所と、
前記スタックを通じて垂直方向に伸長する絶縁性ピラー構造体であって、前記水平方向に伸長する導電性構造体と物理的に直接接触する前記絶縁性ピラー構造体と、
前記空所内の、前記空所の外周に沿った絶縁ライナーと
を含む、メモリアレイ。 - 前記ワード線レベルはまた、前記ゲートに水平方向に隣接するワード線領域を含み、前記空所は、垂直方向に隣接するワード線の間に付加的な領域を有する、請求項5に記載のメモリアレイ。
- 前記空所の前記第2の領域は、前記空所の前記第1の領域よりも垂直方向に長い、請求項5に記載のメモリアレイ。
- 前記絶縁ライナーは二酸化ケイ素を含む、請求項5に記載のメモリアレイ。
- 交互の第1及び第2のレベルのスタックを通じて第1の開口部を形成することであって、前記第1のレベルは第1の材料を含み、前記第2のレベルは第2の材料を含む、ことと、
第1の間隙を形成するために、前記第1の開口部に沿って前記第2のレベルの前記第2の材料を凹部加工することであって、前記第1の間隙は、前記第1のレベルの区間の間に垂直方向にある、ことと、
前記第1の間隙内に第1の保護構造体を形成することと、
第2の間隙を形成するために、前記第1の開口部に沿って前記第1のレベルの前記第1の材料を凹部加工することであって、前記第2の間隙は、前記第1の保護構造体の区間の間に垂直方向にある、ことと、
前記第2の間隙に沿って前記第1のレベルの前記第1の材料の縁を酸化するために、及び前記第1の開口部に沿って前記第1の保護構造体の縁を酸化するために、酸化条件を利用することであって、前記第1の材料の酸化された前記縁は、電荷阻止領域であり且つ前記第1のレベルの前記第1の材料の残存部分に沿ってあり、前記第1の保護構造体の酸化された前記縁はレッジであり、前記レッジの間に垂直方向に第3の間隙がある、ことと、
前記第3の間隙内に、前記電荷阻止領域に沿って電荷捕獲領域を形成することと、
第4の間隙を残すために前記レッジを除去することであって、前記第4の間隙は前記電荷捕獲領域の間に垂直方向にある、ことと、
前記第4の間隙内に、前記第1の保護構造体に直接隣接して第2の保護構造体を形成することと、
前記第1の開口部内に、垂直方向に伸長するトンネリング材料を形成することであって、前記トンネリング材料は、前記第2の保護構造体の縁に沿って、及び前記電荷捕獲領域に沿って伸長する、ことと、
前記第1の開口部内に、前記トンネリング材料に隣接してチャネル材料を形成することと、
前記スタックを通じて第2の開口部を形成することであって、前記第2の開口部は、前記第1のレベルの前記第1の材料の前記残存部分を通じて伸長する、ことと、
前記第2の開口部に沿って空洞を形成するために、前記第1のレベルの前記第1の材料の前記残存部分を除去することと、
前記空洞内に導電領域を形成することと、
空所を形成するために、前記第2のレベルの前記第2の材料、前記第1の保護構造体、及び前記第2の保護構造体を除去することと
を含む、アセンブリを形成する方法。 - 前記第1の材料は窒化ケイ素を含み、前記第1の保護構造体は多結晶シリコンを含み、前記酸化条件の酸化は、前記窒化ケイ素に沿うよりも前記多結晶シリコンに沿ってより多くの拡張を引き起こす、請求項9に記載の方法。
- 前記第1の材料は窒化ケイ素を含み、前記第1の保護構造体は多結晶シリコンを含み、前記酸化条件は、前記窒化ケイ素よりも速く前記多結晶シリコンを酸化する、請求項9に記載の方法。
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