JP7033657B2 - メモリアレイ及びメモリアレイを形成する方法 - Google Patents
メモリアレイ及びメモリアレイを形成する方法 Download PDFInfo
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- JP7033657B2 JP7033657B2 JP2020533768A JP2020533768A JP7033657B2 JP 7033657 B2 JP7033657 B2 JP 7033657B2 JP 2020533768 A JP2020533768 A JP 2020533768A JP 2020533768 A JP2020533768 A JP 2020533768A JP 7033657 B2 JP7033657 B2 JP 7033657B2
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- silicon nitride
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- 230000015654 memory Effects 0.000 title claims description 144
- 239000000463 material Substances 0.000 claims description 212
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 143
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 143
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 134
- 238000003860 storage Methods 0.000 claims description 74
- 239000000377 silicon dioxide Substances 0.000 claims description 67
- 235000012239 silicon dioxide Nutrition 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 63
- 230000000903 blocking effect Effects 0.000 claims description 49
- 230000005641 tunneling Effects 0.000 claims description 43
- 230000004888 barrier function Effects 0.000 claims description 34
- 230000002093 peripheral effect Effects 0.000 claims description 26
- 239000011800 void material Substances 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 239000011810 insulating material Substances 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 description 91
- 238000005530 etching Methods 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 238000003491 array Methods 0.000 description 8
- 239000011232 storage material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 210000002381 plasma Anatomy 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-RNFDNDRNSA-N silicon-32 atom Chemical compound [32Si] XUIMIQQOPSSXEZ-RNFDNDRNSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H01L29/1025—Channel region of field-effect devices
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- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
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- H01L29/4991—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material comprising an air gap
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Description
Claims (11)
- アセンブリであって、
電流を導電するチャネルであって、第1のチャネル部分と前記第1のチャネル部分の下の第2のチャネル部分とを含む前記チャネルと、
第1のゲートと前記第1のチャネル部分との間に配置された第1のメモリセル構造体であって、前記第1のメモリセル構造体は、第1の電荷蓄積領域と第1の電荷阻止領域とを含み、前記第1の電荷阻止領域は、前記第1の電荷蓄積領域と前記第1のゲートとの間に配置され、前記第1の電荷阻止領域は酸窒化ケイ素を含み、前記第1の電荷蓄積領域は窒化ケイ素を含む、前記第1のメモリセル構造体と、
前記第1のメモリセル構造体の下にあり、第2のゲートと前記第2のチャネル部分との間に配置された第2のメモリセル構造体であって、前記第2のメモリセル構造体は、第2の電荷蓄積領域と第2の電荷阻止領域とを含み、前記第2の電荷阻止領域は、前記第2の電荷蓄積領域と前記第2のゲートとの間に配置され、前記第2の電荷阻止領域は酸窒化ケイ素を含み、前記第2の電荷蓄積領域は窒化ケイ素を含む、前記第2のメモリセル構造体と、
前記第1及び第2のゲートの間、並びに前記第1及び第2のメモリセル構造体の間に配置された空所と、
前記空所の上方にあって、且つ、低密度の二酸化ケイ素によって前記空所から離隔された導電材料を含む前記第1のゲートであって、前記低密度の二酸化ケイ素は、前記第1のゲートの、前記第1のチャネル部分とは反対側の縁に沿って、前記第1のゲートの前記導電材料と物理的に直接接触している、前記第1のゲートと、
前記空所の下方にあって、且つ、低密度の二酸化ケイ素によって前記空所から離隔された導電材料を含む前記第2のゲートであって、前記低密度の二酸化ケイ素は、前記第2のゲートの、前記第2のチャネル部分とは反対側の縁に沿って、前記第2のゲートの前記導電材料と物理的に直接接触している、前記第2のゲートと、
前記第1の電荷蓄積領域の前記窒化ケイ素と前記空所との間の第1のライナーと、
前記第2の電荷蓄積領域の前記窒化ケイ素と前記空所との間の第2のライナーと、
前記第1のゲートと前記第1の電荷阻止領域との間にある第1の誘電障壁領域と、
前記第2のゲートと前記第2の電荷阻止領域との間にある第2の誘電障壁領域と、
を含み、
前記第1及び第2の誘電障壁領域は高k材料を含み、前記第1の誘電障壁領域の前記高k材料の縁は前記空所に直接接し、前記第2の誘電障壁領域の前記高k材料の縁は前記空所に直接接する、アセンブリ。 - 前記第1及び第2のライナーは酸窒化ケイ素を含む、請求項1に記載のアセンブリ。
- 前記第1の電荷阻止領域は、前記第1の電荷阻止領域の前記酸窒化ケイ素と前記第1の電荷蓄積領域の前記窒化ケイ素との間に二酸化ケイ素を含み、前記第2の電荷阻止領域は、前記第2の電荷阻止領域の前記酸窒化ケイ素と前記第2の電荷蓄積領域の前記窒化ケイ素との間に二酸化ケイ素を含む、請求項1に記載のアセンブリ。
- アセンブリを形成する方法であって、
交互の第1及び第2のレベルのスタックを通じて第1の開口部を形成することであって、前記第1のレベルは第1の窒化ケイ素を含み、前記第2のレベルは二酸化ケイ素を含む、ことと、
前記第1の開口部を形成した後に、前記第1のレベルの前記第1の窒化ケイ素の内の一部を第2の窒化ケイ素と置き換えることと、
前記第2のレベルの前記二酸化ケイ素の残存部分を残しつつ、前記第2のレベルの前記二酸化ケイ素の内の一部をメモリセル構造体と置き換えることであって、前記メモリセル構造体は、電荷阻止領域に隣接する電荷蓄積領域を含む、ことと、
前記第1の開口部内に、垂直方向に伸長するトンネリング材料を形成することであって、前記トンネリング材料は、前記メモリセル構造体の前記電荷蓄積領域に沿って伸長する、ことと、
前記第1の開口部内に、前記トンネリング材料に隣接してチャネル材料を形成することと、
前記スタックを通じて第2の開口部を形成することであって、前記第2の開口部は、前記第2のレベルの前記二酸化ケイ素の前記残存部分を通じて、及び前記第1のレベルの前記窒化ケイ素を通じて伸長することと、
前記第2のレベルの前記二酸化ケイ素の前記残存部分を除去して、前記第2の開口部に沿って空洞を形成することと、
前記空洞内に導電領域を形成することと、
前記第1のレベルの前記窒化ケイ素を除去して、前記導電領域の間に空所を形成することであって、前記窒化ケイ素を除去して前記空所を形成することは、前記第1及び第2の窒化ケイ素を除去することを含み、前記空所は、垂直方向に隣接する前記導電領域の間にある領域を有し、且つ、垂直方向に隣接する前記メモリセル構造体の間にある領域を有する、ことと、
前記空所を形成した後に、前記空所内に、前記垂直方向に隣り合った前記導電領域の間に伸長する低密度の多孔性絶縁材料を形成することと、
を含む方法。 - アセンブリを形成する方法であって、
交互の第1及び第2のレベルのスタックを通じて第1の開口部を形成することであって、前記第1のレベルは第1の材料を含み、前記第2のレベルは第2の材料を含む、ことと、
前記第1の開口部に沿って前記第1のレベルの前記第1の材料を凹部加工して、第1の間隙を形成することであって、前記第1の間隙は、前記第2のレベルの区域の間に垂直方向にある、ことと、
前記第1の間隙内に離隔構造体を形成することと、
前記第1の開口部に沿って前記第2のレベルの前記第2の材料を凹部加工して、第2の間隙を形成し、且つ、前記第2の間隙に沿って前記第2の材料の残存部分を残すことであって、前記第2の間隙は、前記離隔構造体の区域の間に垂直方向にあり、前記第2の間隙の個々は、上部周辺面、下部周辺面、及び内部周辺面を各々有する、ことと、
前記第2の間隙の各々の前記上部周辺面、前記内部周辺面、及び前記下部周辺面に沿って伸長するように、及び前記第2の間隙を狭めるように、誘電障壁材料のライナーを形成することと、
狭められた前記第2の間隙内に、前記第2のレベルに沿って第1の窒化ケイ素区域を形成することであって、垂直方向に隣接する前記第1の窒化ケイ素区域は、前記離隔構造体を含む介在領域によって相互から垂直方向に離隔される、ことと、
酸化条件を利用して、前記第1の窒化ケイ素区域を酸化し、且つ、前記離隔構造体を酸化することであって、酸化された前記第1の窒化ケイ素区域は電荷阻止領域であり、酸化された前記離隔構造体はレッジであり、前記レッジの間に垂直方向に第3の間隙がある、ことと、
前記第3の間隙内に、前記電荷阻止領域に沿って第2の窒化ケイ素区域を形成することと、
前記第2の窒化ケイ素区域の縁を酸化することであって、酸化された前記縁は、前記第1の開口部に沿った縁を含み、且つ、前記レッジに沿った縁を含み、酸化されていない前記第2の窒化ケイ素区域の残存領域は電荷捕獲領域である、ことと、
前記レッジを除去して第4の間隙を残すことであって、前記第4の間隙は、前記電荷捕獲領域の間に垂直方向にある、ことと、
前記第4の間隙内に第3の窒化ケイ素区域を形成することであって、前記第3の窒化ケイ素区域は、前記第1のレベルに沿い、前記第1の材料の残存部分に隣接する、ことと、
前記第1の開口部内に、垂直方向に伸長するトンネリング材料を形成することであって、前記トンネリング材料は、前記第3の窒化ケイ素区域の縁に沿って、及び前記電荷捕獲領域に沿って伸長する、ことと、
前記第1の開口部内に、前記トンネリング材料に隣接してチャネル材料を形成することと、
前記スタックを通じて第2の開口部を形成することであって、前記第2の開口部は、前記第1の材料の前記残存部分を通じて、及び前記第2の材料の前記残存部分を通じて伸長することと、
前記第2のレベルの前記第2の材料の前記残存部分を除去して、前記第2のレベルに沿って空洞を形成することと、
前記空洞内に導電領域を形成することと、
前記第1の材料の前記残存部分及び前記第1のレベルの前記第3の窒化ケイ素区域を除去して、前記第2の開口部に沿って空所を形成することと、
を含む方法。 - 前記第1の材料の前記残存部分及び前記第1のレベルの前記第3の窒化ケイ素区域を前記除去することは、前記第2の開口部に隣接する前記導電領域の端部の周囲に伸長する絶縁ライナー領域を形成し、前記絶縁ライナー領域は、低密度の二酸化ケイ素を含む、請求項5に記載の方法。
- 誘電障壁材料の前記ライナーを前記形成することは、
前記第2の間隙の前記上部周辺面、前記下部周辺面、及び前記内部周辺面に沿って、及び前記離隔構造体の外縁に沿ってコンフォーマルに伸長するように前記誘電障壁材料の層を形成することと、
前記誘電障壁材料の前記層に沿って窒化ケイ素の塊を形成することであって、窒化ケイ素の前記塊は、前記第2の間隙内に、前記離隔構造体の前記外縁に沿って伸長する、ことと、
窒化ケイ素の前記塊の内の一部を除去して、窒化ケイ素の前記塊から前記第1の窒化ケイ素区域を形成することと、
窒化ケイ素の前記塊の内の前記一部を除去した後に、前記誘電障壁材料の前記ライナーを残しつつ、前記離隔構造体の前記縁に沿って前記縁から前記誘電障壁材料を除去することと、
を含む、請求項5に記載の方法。 - 前記第1の材料は窒化ケイ素を含み、前記第2の材料は二酸化ケイ素を含む、請求項5に記載の方法。
- 前記第2の材料を前記凹部加工して前記第2の間隙を形成することは、前記第2の間隙の後部に沿って前記第1の材料の領域を露出する、請求項5に記載の方法。
- 前記離隔構造体は多結晶シリコンを含み、前記酸化条件の酸化は、前記第1の窒化ケイ素区域に含まれる窒化ケイ素に沿うよりも前記多結晶シリコンに沿って多くの拡張を引き起こす、請求項5に記載の方法。
- 前記離隔構造体は多結晶シリコンを含み、前記酸化条件は、前記第1の窒化ケイ素区域よりも速く前記多結晶シリコンを酸化する、請求項5に記載の方法。
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KR20200094222A (ko) | 2020-08-06 |
US20200075630A1 (en) | 2020-03-05 |
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US10497715B2 (en) | 2019-12-03 |
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US20190198520A1 (en) | 2019-06-27 |
US20220199645A1 (en) | 2022-06-23 |
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