JP6966917B2 - 基板処理方法および基板処理装置 - Google Patents

基板処理方法および基板処理装置 Download PDF

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Publication number
JP6966917B2
JP6966917B2 JP2017198618A JP2017198618A JP6966917B2 JP 6966917 B2 JP6966917 B2 JP 6966917B2 JP 2017198618 A JP2017198618 A JP 2017198618A JP 2017198618 A JP2017198618 A JP 2017198618A JP 6966917 B2 JP6966917 B2 JP 6966917B2
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JP
Japan
Prior art keywords
liquid
substrate
nozzle
droplet
protective
Prior art date
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Application number
JP2017198618A
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English (en)
Japanese (ja)
Other versions
JP2019075413A (ja
JP2019075413A5 (enExample
Inventor
崇之 西田
淳一 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2017198618A priority Critical patent/JP6966917B2/ja
Priority to PCT/JP2018/037271 priority patent/WO2019073905A1/ja
Priority to CN201880060333.XA priority patent/CN111095494B/zh
Priority to KR1020207008765A priority patent/KR102346493B1/ko
Priority to TW107136001A priority patent/TWI697948B/zh
Publication of JP2019075413A publication Critical patent/JP2019075413A/ja
Publication of JP2019075413A5 publication Critical patent/JP2019075413A5/ja
Application granted granted Critical
Publication of JP6966917B2 publication Critical patent/JP6966917B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/02—Spray pistols; Apparatus for discharge
    • B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
    • B05B7/0416—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2017198618A 2017-10-12 2017-10-12 基板処理方法および基板処理装置 Active JP6966917B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017198618A JP6966917B2 (ja) 2017-10-12 2017-10-12 基板処理方法および基板処理装置
PCT/JP2018/037271 WO2019073905A1 (ja) 2017-10-12 2018-10-04 基板処理方法および基板処理装置
CN201880060333.XA CN111095494B (zh) 2017-10-12 2018-10-04 基板处理方法及基板处理装置
KR1020207008765A KR102346493B1 (ko) 2017-10-12 2018-10-04 기판 처리 방법 및 기판 처리 장치
TW107136001A TWI697948B (zh) 2017-10-12 2018-10-12 基板處理方法以及基板處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017198618A JP6966917B2 (ja) 2017-10-12 2017-10-12 基板処理方法および基板処理装置

Publications (3)

Publication Number Publication Date
JP2019075413A JP2019075413A (ja) 2019-05-16
JP2019075413A5 JP2019075413A5 (enExample) 2020-12-10
JP6966917B2 true JP6966917B2 (ja) 2021-11-17

Family

ID=66100772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017198618A Active JP6966917B2 (ja) 2017-10-12 2017-10-12 基板処理方法および基板処理装置

Country Status (5)

Country Link
JP (1) JP6966917B2 (enExample)
KR (1) KR102346493B1 (enExample)
CN (1) CN111095494B (enExample)
TW (1) TWI697948B (enExample)
WO (1) WO2019073905A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7285166B2 (ja) * 2019-08-20 2023-06-01 株式会社荏原製作所 基板洗浄方法および基板洗浄装置
CN116153775B (zh) * 2020-03-05 2025-11-18 东京毅力科创株式会社 基片处理方法和基片处理装置
KR102682854B1 (ko) * 2020-06-02 2024-07-10 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
CN114888722B (zh) * 2022-05-17 2024-11-22 华海清科股份有限公司 一种化学机械抛光方法
US12138745B2 (en) * 2023-03-22 2024-11-12 Yield Engineering Systems, Inc. Apparatus and method for coating removal

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3834542B2 (ja) * 2001-11-01 2006-10-18 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法
TW561516B (en) * 2001-11-01 2003-11-11 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
JP2007012998A (ja) * 2005-07-01 2007-01-18 Dainippon Screen Mfg Co Ltd 基板洗浄装置およびそれを備えた基板処理システム
US7766565B2 (en) * 2005-07-01 2010-08-03 Sokudo Co., Ltd. Substrate drying apparatus, substrate cleaning apparatus and substrate processing system
JP2008130643A (ja) * 2006-11-17 2008-06-05 Dainippon Screen Mfg Co Ltd ノズル、基板処理装置および基板処理方法
JP5151629B2 (ja) * 2008-04-03 2013-02-27 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、現像方法、現像装置及び記憶媒体
JP5512424B2 (ja) * 2010-07-06 2014-06-04 東京エレクトロン株式会社 基板洗浄装置および基板洗浄方法
JP6709555B2 (ja) * 2015-03-05 2020-06-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6508721B2 (ja) 2015-09-28 2019-05-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
JP2019075413A (ja) 2019-05-16
WO2019073905A1 (ja) 2019-04-18
CN111095494B (zh) 2024-11-26
TW201923876A (zh) 2019-06-16
TWI697948B (zh) 2020-07-01
KR20200041990A (ko) 2020-04-22
CN111095494A (zh) 2020-05-01
KR102346493B1 (ko) 2021-12-31

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