TWI697948B - 基板處理方法以及基板處理裝置 - Google Patents
基板處理方法以及基板處理裝置 Download PDFInfo
- Publication number
- TWI697948B TWI697948B TW107136001A TW107136001A TWI697948B TW I697948 B TWI697948 B TW I697948B TW 107136001 A TW107136001 A TW 107136001A TW 107136001 A TW107136001 A TW 107136001A TW I697948 B TWI697948 B TW I697948B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- substrate
- nozzle
- cleaning
- droplet
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 371
- 238000003672 processing method Methods 0.000 title claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 727
- 238000004140 cleaning Methods 0.000 claims abstract description 290
- 238000000034 method Methods 0.000 claims abstract description 64
- 230000007704 transition Effects 0.000 claims abstract description 19
- 230000001681 protective effect Effects 0.000 claims description 43
- 230000002093 peripheral effect Effects 0.000 claims description 35
- 239000012530 fluid Substances 0.000 claims description 33
- 238000007599 discharging Methods 0.000 claims description 10
- 239000007921 spray Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 7
- 238000003379 elimination reaction Methods 0.000 claims description 5
- 230000008030 elimination Effects 0.000 claims description 4
- 230000002209 hydrophobic effect Effects 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 4
- 239000006255 coating slurry Substances 0.000 claims 2
- 230000007717 exclusion Effects 0.000 claims 1
- 238000005507 spraying Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 79
- 208000028659 discharge Diseases 0.000 description 69
- 238000000576 coating method Methods 0.000 description 19
- 238000005406 washing Methods 0.000 description 19
- 239000011248 coating agent Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 239000003595 mist Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000007581 slurry coating method Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
- B05B7/0416—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017198618A JP6966917B2 (ja) | 2017-10-12 | 2017-10-12 | 基板処理方法および基板処理装置 |
| JP2017-198618 | 2017-10-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201923876A TW201923876A (zh) | 2019-06-16 |
| TWI697948B true TWI697948B (zh) | 2020-07-01 |
Family
ID=66100772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107136001A TWI697948B (zh) | 2017-10-12 | 2018-10-12 | 基板處理方法以及基板處理裝置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6966917B2 (enExample) |
| KR (1) | KR102346493B1 (enExample) |
| CN (1) | CN111095494B (enExample) |
| TW (1) | TWI697948B (enExample) |
| WO (1) | WO2019073905A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7285166B2 (ja) * | 2019-08-20 | 2023-06-01 | 株式会社荏原製作所 | 基板洗浄方法および基板洗浄装置 |
| CN116153775B (zh) * | 2020-03-05 | 2025-11-18 | 东京毅力科创株式会社 | 基片处理方法和基片处理装置 |
| KR102682854B1 (ko) * | 2020-06-02 | 2024-07-10 | 세메스 주식회사 | 기판 처리 방법 및 기판 처리 장치 |
| CN114888722B (zh) * | 2022-05-17 | 2024-11-22 | 华海清科股份有限公司 | 一种化学机械抛光方法 |
| US12138745B2 (en) * | 2023-03-22 | 2024-11-12 | Yield Engineering Systems, Inc. | Apparatus and method for coating removal |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030079764A1 (en) * | 2001-11-01 | 2003-05-01 | Keizo Hirose | Substrate processing apparatus and substrate processing method |
| US20070003278A1 (en) * | 2005-07-01 | 2007-01-04 | Koji Kaneyama | Substrate drying apparatus, substrate cleaning apparatus and substrate processing system |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3834542B2 (ja) * | 2001-11-01 | 2006-10-18 | 東京エレクトロン株式会社 | 基板洗浄装置及び基板洗浄方法 |
| JP2007012998A (ja) * | 2005-07-01 | 2007-01-18 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置およびそれを備えた基板処理システム |
| JP2008130643A (ja) * | 2006-11-17 | 2008-06-05 | Dainippon Screen Mfg Co Ltd | ノズル、基板処理装置および基板処理方法 |
| JP5151629B2 (ja) * | 2008-04-03 | 2013-02-27 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置、現像方法、現像装置及び記憶媒体 |
| JP5512424B2 (ja) * | 2010-07-06 | 2014-06-04 | 東京エレクトロン株式会社 | 基板洗浄装置および基板洗浄方法 |
| JP6709555B2 (ja) * | 2015-03-05 | 2020-06-17 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| JP6508721B2 (ja) | 2015-09-28 | 2019-05-08 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
-
2017
- 2017-10-12 JP JP2017198618A patent/JP6966917B2/ja active Active
-
2018
- 2018-10-04 CN CN201880060333.XA patent/CN111095494B/zh active Active
- 2018-10-04 KR KR1020207008765A patent/KR102346493B1/ko active Active
- 2018-10-04 WO PCT/JP2018/037271 patent/WO2019073905A1/ja not_active Ceased
- 2018-10-12 TW TW107136001A patent/TWI697948B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030079764A1 (en) * | 2001-11-01 | 2003-05-01 | Keizo Hirose | Substrate processing apparatus and substrate processing method |
| US20070003278A1 (en) * | 2005-07-01 | 2007-01-04 | Koji Kaneyama | Substrate drying apparatus, substrate cleaning apparatus and substrate processing system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019075413A (ja) | 2019-05-16 |
| WO2019073905A1 (ja) | 2019-04-18 |
| CN111095494B (zh) | 2024-11-26 |
| TW201923876A (zh) | 2019-06-16 |
| KR20200041990A (ko) | 2020-04-22 |
| JP6966917B2 (ja) | 2021-11-17 |
| CN111095494A (zh) | 2020-05-01 |
| KR102346493B1 (ko) | 2021-12-31 |
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