JP6866038B2 - パッケージデバイスの製造方法 - Google Patents
パッケージデバイスの製造方法 Download PDFInfo
- Publication number
- JP6866038B2 JP6866038B2 JP2017121277A JP2017121277A JP6866038B2 JP 6866038 B2 JP6866038 B2 JP 6866038B2 JP 2017121277 A JP2017121277 A JP 2017121277A JP 2017121277 A JP2017121277 A JP 2017121277A JP 6866038 B2 JP6866038 B2 JP 6866038B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- groove
- substrate
- mold
- filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000011347 resin Substances 0.000 claims description 185
- 229920005989 resin Polymers 0.000 claims description 185
- 239000000758 substrate Substances 0.000 claims description 156
- 239000000945 filler Substances 0.000 claims description 57
- 238000004140 cleaning Methods 0.000 claims description 49
- 239000002390 adhesive tape Substances 0.000 claims description 26
- 239000012530 fluid Substances 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 230000002745 absorbent Effects 0.000 claims description 7
- 239000002250 absorbent Substances 0.000 claims description 7
- 238000005406 washing Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002679 ablation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017121277A JP6866038B2 (ja) | 2017-06-21 | 2017-06-21 | パッケージデバイスの製造方法 |
KR1020180069877A KR102418419B1 (ko) | 2017-06-21 | 2018-06-18 | 패키지 디바이스의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017121277A JP6866038B2 (ja) | 2017-06-21 | 2017-06-21 | パッケージデバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019009176A JP2019009176A (ja) | 2019-01-17 |
JP6866038B2 true JP6866038B2 (ja) | 2021-04-28 |
Family
ID=64959734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017121277A Active JP6866038B2 (ja) | 2017-06-21 | 2017-06-21 | パッケージデバイスの製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6866038B2 (ko) |
KR (1) | KR102418419B1 (ko) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000124164A (ja) * | 1998-10-16 | 2000-04-28 | Mitsubishi Electric Corp | 半導体装置の製造方法及び実装方法 |
JP2002100709A (ja) | 2000-09-21 | 2002-04-05 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP5659033B2 (ja) * | 2011-02-04 | 2015-01-28 | 株式会社東芝 | 半導体装置の製造方法 |
JP6242776B2 (ja) * | 2014-09-26 | 2017-12-06 | 富士フイルム株式会社 | 保護膜組成物、半導体装置の製造方法およびレーザーダイシング方法 |
JP6512298B2 (ja) * | 2015-08-11 | 2019-05-15 | 株式会社村田製作所 | 高周波モジュールおよびその製造方法 |
JP2017056465A (ja) * | 2015-09-14 | 2017-03-23 | 株式会社ディスコ | パッケージ基板の加工方法 |
-
2017
- 2017-06-21 JP JP2017121277A patent/JP6866038B2/ja active Active
-
2018
- 2018-06-18 KR KR1020180069877A patent/KR102418419B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2019009176A (ja) | 2019-01-17 |
KR102418419B1 (ko) | 2022-07-06 |
KR20180138532A (ko) | 2018-12-31 |
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