JP6512298B2 - 高周波モジュールおよびその製造方法 - Google Patents
高周波モジュールおよびその製造方法 Download PDFInfo
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Description
本発明の第1実施形態にかかる高周波モジュールについて、図1〜図4を参照して説明する。なお、図1は高周波モジュールの断面図、図2は高周波モジュールの平面図、図3は高周波モジュールの側面図、図4は高周波モジュールの側面に設けられた溝を示す図である。また、図2では、シールド膜の封止樹脂層の上面を被覆する部分を図示省略し、図3では、シールド膜を図示省略している。
次に、高周波モジュール1aの製造方法について、複数の高周波モジュール1aがマトリクス状に配列された複数の封止体12の集合体を形成した後、個片化する場合を例として説明する。まず、実装電極6、外部電極7、各内部配線電極8a,8bおよびビア導体9が形成された多層配線基板2を準備する。
例えば、図5に示すように、多層配線基板2の下面20cにも部品30が実装されていてもよい。この場合、多層配線基板2が4層の絶縁層2a〜2dで構成され、上から3層目の絶縁層2cと最下層の絶縁層2dとの間に、内部配線電極8a(グランド電極)が配設される。この内部配線電極8aは、平面視で多層配線基板2と略同じ面積で形成されており、上下の部品3,30間のシールドとしても機能している。また、多層配線基板2の下面20c側にも各部品30を封止する封止樹脂層40が設けられるとともに、当該封止樹脂層40に外部接続用の柱状導体11が配設される。ここで、多層配線基板2の下面20cには、外部電極7に代えて、各部品30および柱状導体11を実装するための実装電極60が形成される。シールド膜5は、下面20c側の封止樹脂層40の側面40bをさらに被覆している。
本発明の第2実施形態にかかる高周波モジュール1bについて、図6を参照して説明する。なお、図6はシールド膜5の天面部分を図示省略した状態の高周波モジュール1bの平面図である。
本発明の第3実施形態にかかる高周波モジュールについて、図7〜図9を参照して説明する。なお、図7は高周波モジュールの平面図、図8は多層配線基板に設けられたグランド電極を示す図、図9は高周波モジュールの側面図である。ここで、図7ではシールド膜の天面部分を図示省略している。また、図8は内部配線電極(グランド電極)の平面図を示す。また、図9ではシールド膜を図示省略している。
例えば、図10に示すように、封止体12の側面のうち、内部配線電極8aの露出部分8a1を含む領域12c以外の領域12d(本発明の「他の領域」に相当)に複数の溝10cを設けて当該領域12dを粗面化してもよい。このとき、領域12cに設けられた各溝10bの幅W1を、他の領域12dに設けられた各溝10cの幅W2よりも狭く形成することにより、領域12cの単位面積当たりの溝10bの数が、他の領域12dの単位面積当たりの溝10cの数よりも多く形成するようにしてもよい。この構成によると、シールド膜5の付きにくい領域12cの表面積が増えるため、シールド膜5全体の密着強度の向上を図る上で効率的である。
本発明の第4実施形態にかかる高周波モジュール1dについて、図11および図12を参照して説明する。なお、図11および図12は、それぞれ高周波モジュール1dの部分断面図であり、多層配線基板2と封止樹脂層4のみを図示し、他の構成を図示省略している。また、図12(a)は本実施形態の方法で曲面部12bを形成したときの断面状態を示す図で、図12(b)は従来の方法で曲面部12bを形成したときの断面状態を示す図である。
本発明の第5実施形態の高周波モジュール1eについて、図13および図14を参照して説明する。なお、図13は本実施形態の高周波モジュール1eの部分断面図であり、図11に対応するである。また、図14は本実施形態の製造方法を説明するための図で、封止体12の集合体の平面図である。
2 多層配線基板(配線基板)
20a 上面(主面)
3,30 部品
4,40 封止樹脂層
5 シールド膜
8a 内部配線電極(グランド電極)
8a1 端部
10a〜10c 溝
12 封止体
12b 曲面部
12c 領域(所定の領域)
12d 領域(他の領域)
Claims (5)
- 配線基板と、前記配線基板の主面に実装された部品と、前記配線基板の前記主面に積層され前記部品を覆う封止樹脂層とを有する封止体と、
前記封止樹脂層の表面を被覆するシールド膜とを備え、
前記封止体の側面は、曲面状または略曲面状に形成された曲面部を有し、
前記曲面部には、前記配線基板の前記主面に対して交差する方向に延びた複数の溝が設けられ、当該複数の溝により前記曲面部が粗面化されていることを特徴とする高周波モジュール。 - 前記配線基板に設けられたグランド電極をさらに備え、
前記グランド電極の端部が、前記曲面部に露出していることを特徴とする請求項1に記載の高周波モジュール。 - グランド電極が設けられた配線基板と、前記配線基板の主面に実装された部品と、前記配線基板の前記主面に積層され前記部品を覆う封止樹脂層とを有する封止体と、
前記封止樹脂層の表面を被覆するシールド膜とを備え、
前記封止体の側面には、前記グランド電極の端部の露出部分が形成され、
前記封止体の側面のうち、前記グランド電極の端部の露出部分を含む所定の領域には、前記配線基板の前記主面に対して交差する方向に延びた複数の溝が設けられ、当該複数の溝により前記所定の領域が粗面化されていることを特徴とする高周波モジュール。 - 前記封止体の側面の前記所定の領域と異なる他の領域に、前記配線基板の前記主面に対して交差する方向に延びた複数の溝が設けられることにより、当該他の領域も粗面化され、
前記所定領域に設けられた溝の幅が、前記他の領域に設けられた溝の幅よりも狭く形成されることにより、前記所定領域の単位面積当たりの溝の数が、前記他の領域の単位面積当たりの溝の数よりも多く形成されていることを特徴とする請求項3に記載の高周波モジュール。 - 配線基板と、前記配線基板の主面に実装された部品と、前記配線基板の前記主面に積層され前記部品を覆う封止樹脂層とを有する複数の封止体が、マトリクス状に配列された集合体を準備する準備工程と、
前記集合体の一部をレーザ加工でくり抜くことによって、前記各封止体の側面の一部に曲面部を形成する第1レーザ加工工程と、
前記各封止体それぞれの前記曲面部に前記第1レーザ加工工程よりも弱いエネルギーのレーザ光を照射する第2レーザ加工工程と、
ダイシングまたはレーザ加工により、前記集合体を前記封止体の単体に個片化する個片化工程と、
前記封止体の前記封止樹脂層の表面を被覆するシールド膜を形成するシールド膜形成工程とを備え、
前記第1レーザ加工工程では、レーザ光を走査することにより前記各封止体それぞれの前記曲面部を粗面化することを特徴とする高周波モジュールの製造方法。
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