JP6835743B2 - 垂直共振器型面発光レーザ - Google Patents
垂直共振器型面発光レーザ Download PDFInfo
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- JP6835743B2 JP6835743B2 JP2017563332A JP2017563332A JP6835743B2 JP 6835743 B2 JP6835743 B2 JP 6835743B2 JP 2017563332 A JP2017563332 A JP 2017563332A JP 2017563332 A JP2017563332 A JP 2017563332A JP 6835743 B2 JP6835743 B2 JP 6835743B2
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- 230000003647 oxidation Effects 0.000 claims description 118
- 238000007254 oxidation reaction Methods 0.000 claims description 118
- 229910052782 aluminium Inorganic materials 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000009826 distribution Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 37
- 238000010586 diagram Methods 0.000 description 30
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 25
- 238000000034 method Methods 0.000 description 24
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 13
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
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- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/1833—Position of the structure with more than one structure
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/1833—Position of the structure with more than one structure
- H01S5/18333—Position of the structure with more than one structure only above the active layer
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
- H01S5/426—Vertically stacked cavities
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
第1の電気接点を設けるステップと、
基板を設けるステップと、
第1の分布ブラッグ反射器を設けるステップと、
活性層を設けるステップと、
第2の分布ブラッグ反射器を設けるステップと、
第2の電気接点を設けるステップと、
少なくとも2つの電流開口層を設けるステップであって、少なくとも2つの電流開口層が活性層の下又は上に配置される、ステップと、
少なくとも2つの電流開口層の第1の電流開口層を少なくとも2つの電流開口層の第2の電流開口層よりも活性層に近く配置するステップと、
第1の電流開口層に第1の電流開口を設けるステップと、
第1の電流開口よりも小さなサイズを有する第2の電流開口を第2の電流開口層に設けるステップと、
を有する。
第1の電気接点を設けるステップと、
基板を設けるステップと、
第1の分布ブラッグ反射器を設けるステップと、
活性層を設けるステップと、
第2の分布ブラッグ反射器を設けるステップと、
第2の電気接点を設けるステップと、
0.95≦y≦1である、少なくとも40nmの厚さを有する少なくとも1つのAlyGa(1−y)As層を設けるステップであって、AlyGa(1−y)As層が少なくとも1つの酸化制御層によって分離される、ステップと、
を有する。
上記のようなVCSELを設けるステップと、
電気的な駆動回路を設けるステップと、
任意選択で電源を設けるステップと、
を有する。
105 第1の電気接点
110 基板
115 第1の分布ブラッグ反射器
116 高屈折率層
117 低屈折率層
118 AlyGa(1−y)As副層
119 酸化制御層
120 活性層
122 電流開口
122a 第1の電流開口
122b 第2の電流開口
125 電流開口層
125a 第1の電流開口層
125b 第2の電流開口層
125c 第3の電流開口層
125d 第4の電流開口層
126 酸化プロファイル
127 ウェストライン
130 第2の分布ブラッグ反射器
135 第2の電気接点
150 冷却構造
200 AlAs含有量
210 放射方向に沿ったVCSELを横切る方向
250 定在波パターン
300 レーザ素子
310 電気的な駆動回路
320 電源
330 レーザアレイ
410 第1の電気接点を設けるステップ
420 基板を設けるステップ
430 第1の分布ブラッグ反射器を設けるステップ
440 活性層を設けるステップ
450 第2の分布ブラッグ反射器を設けるステップ
460 第2の電気接点を設けるステップ
470 AlyGa(1−y)As層を設けるステップ
Claims (12)
- 第1の電気接点と、基板と、第1の分布ブラッグ反射器と、活性層と、第2の分布ブラッグ反射器と、第2の電気接点と、を備える垂直共振器型面発光レーザであって、前記垂直共振器型面発光レーザが0.95≦y≦1である、少なくとも1つのAlyGa(1−y)As層を含み、前記少なくとも1つのAlyGa(1−y)As層が少なくとも1つの酸化制御層によって少なくとも2つの副層に分離され、前記少なくとも2つの副層の厚さと前記少なくとも1つの酸化制御層の厚さとを含む前記少なくとも1つのAl y Ga (1−y) As層の全厚さは少なくとも40nmの厚さを有し、前記少なくとも1つの酸化制御層の厚さが前記Al y Ga (1−y) As層の全厚さの3%〜10%を構成し、前記酸化制御層の材料が0.4≦x≦0.6であるAlxGa(1−x)Asを含む、垂直共振器型面発光レーザ。
- 前記第1又は前記第2の分布ブラッグ反射器が前記少なくとも1つのAlyGa(1−y)As層を含む、請求項1に記載の垂直共振器型面発光レーザ。
- 電流開口層をさらに備え、前記電流開口層が前記少なくとも1つのAlyGa(1−y)As層を含む、請求項1又は2に記載の垂直共振器型面発光レーザ。
- 前記活性層の下又は上に配置された少なくとも2つの電流開口層を備え、前記電流開口層のそれぞれが1つのAlyGa(1−y)As層を含み、前記少なくとも2つの電流開口層の第1の電流開口層が前記少なくとも2つの電流開口層の第2の電流開口層よりも前記活性層により近く配置され、前記第1の電流開口層が前記第2の電流開口層の第2の電流開口よりも大きなサイズを有する第1の電流開口を含む、請求項1乃至3のいずれか一項に記載の垂直共振器型面発光レーザ。
- 前記少なくとも1つのAlyGa(1−y)As層がy>0.99を特徴とし、前記少なくとも1つのAlyGa(1−y)As層が少なくとも2つの酸化制御層によって分離される、請求項1又は2に記載の垂直共振器型面発光レーザ。
- 前記少なくとも1つのAlyGa(1−y)As層の少なくとも1つがテーパ付けされた酸化プロファイルを含む、請求項1乃至3のいずれか一項に記載の垂直共振器型面発光レーザ。
- 前記テーパ付けされた酸化プロファイルを有する前記少なくとも1つのAlyGa(1−y)As層が少なくとも2つの酸化制御層を含み、前記少なくとも2つの酸化制御層が前記少なくとも1つのAlyGa(1−y)As層を少なくとも3つの副層に分離し、前記3つの副層の少なくとも1つが他の副層とは異なる厚さを有する、請求項6に記載の垂直共振器型面発光レーザ。
- 前記テーパ付けされた酸化プロファイルのウェストラインが、所定の電気的な駆動電流で駆動されたときに前記垂直共振器型面発光レーザの定在波パターンのノードの範囲内に配置されている、請求項6に記載の垂直共振器型面発光レーザ。
- 前記第1及び前記第2の分布ブラッグ反射器が複数の高屈折率層及び複数の低屈折率層を含み、前記低屈折率層が前記AlyGa(1−y)As層を含む、請求項1又は2に記載の垂直共振器型面発光レーザ。
- 前記活性層の下又は上に配置された少なくとも2つの電流開口層を備え、前記電流開口層のそれぞれが1つのAlyGa(1−y)As層を含み、前記少なくとも2つの電流開口層の第1の電流開口層が、前記少なくとも2つの電流開口層の第2の電流開口層の第2の電流開口よりも大きなサイズを有する第1の電流開口を含み、前記第2の電流開口層が、前記活性層に対して当該垂直共振器型面発光レーザの発光波長の2分の1の整数倍に相当する距離に配置される、請求項1乃至3のいずれか一項に記載の垂直共振器型面発光レーザ。
- 請求項1乃至10のいずれか一項に記載の少なくとも1つの垂直共振器型面発光レーザと、前記垂直共振器型面発光レーザを電気的に駆動するための電気的な駆動回路と、を備えるレーザ素子。
- 第1の電気接点を設けるステップと、
基板を設けるステップと、
第1の分布ブラッグ反射器を設けるステップと、
活性層を設けるステップと、
第2の分布ブラッグ反射器を設けるステップと、
第2の電気接点を設けるステップと、
0.95≦y≦1である少なくとも1つのAlyGa(1−y)As層を設けるステップであって、前記AlyGa(1−y)As層が少なくとも1つの酸化制御層によって少なくとも2つの副層に分離され、前記少なくとも2つの副層の厚さと前記少なくとも1つの酸化制御層の厚さとを含む前記少なくとも1つのAl y Ga (1−y) As層の全厚さは少なくとも40nmの厚さを有し、前記少なくとも1つの酸化制御層の厚さが前記Al y Ga (1−y) As層の全厚さの3%〜10%を構成し、前記酸化制御層の材料が0.4≦x≦0.6であるAlxGa(1−x)Asを含む、ステップと、
を有する、垂直共振器型面発光レーザを製造する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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EP15171099 | 2015-06-09 | ||
EP15171099.3 | 2015-06-09 | ||
PCT/EP2016/062252 WO2016198282A1 (en) | 2015-06-09 | 2016-05-31 | Vertical cavity surface emitting laser |
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JP2020123001A Division JP2021073679A (ja) | 2015-06-09 | 2020-07-17 | 垂直共振器型面発光レーザ |
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JP2018517301A JP2018517301A (ja) | 2018-06-28 |
JP2018517301A5 JP2018517301A5 (ja) | 2020-12-10 |
JP6835743B2 true JP6835743B2 (ja) | 2021-02-24 |
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Country | Link |
---|---|
US (2) | US10128636B2 (ja) |
EP (2) | EP3308436B1 (ja) |
JP (2) | JP6835743B2 (ja) |
KR (1) | KR20180015630A (ja) |
CN (3) | CN111564753A (ja) |
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CN111564753A (zh) | 2020-08-21 |
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CN107690737A (zh) | 2018-02-13 |
JP2018517301A (ja) | 2018-06-28 |
BR112017025393A2 (pt) | 2018-08-07 |
WO2016198282A1 (en) | 2016-12-15 |
EP3308436B1 (en) | 2019-02-20 |
US10128636B2 (en) | 2018-11-13 |
RU2655716C1 (ru) | 2018-05-29 |
US10658817B2 (en) | 2020-05-19 |
EP3474395A1 (en) | 2019-04-24 |
JP2021073679A (ja) | 2021-05-13 |
EP3308436A1 (en) | 2018-04-18 |
CN111564754A (zh) | 2020-08-21 |
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