JP6831814B2 - 複数のイオン注入を用いた窒化ガリウム基板の製造方法 - Google Patents
複数のイオン注入を用いた窒化ガリウム基板の製造方法 Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 313
- 229910002601 GaN Inorganic materials 0.000 title claims description 300
- 239000000758 substrate Substances 0.000 title claims description 157
- 238000004519 manufacturing process Methods 0.000 title claims description 91
- 238000005468 ion implantation Methods 0.000 title claims description 79
- 238000000034 method Methods 0.000 claims description 67
- 230000001133 acceleration Effects 0.000 claims description 41
- 150000002500 ions Chemical class 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 230000000116 mitigating effect Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000005336 cracking Methods 0.000 description 8
- -1 nitrogen ions Chemical class 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000010297 mechanical methods and process Methods 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229930002839 ionone Natural products 0.000 description 1
- 150000002499 ionone derivatives Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
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- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
本出願は、2018年05月29日付の米国特許出願第15/991,505号に基づく優先権の利益を主張し、当該米国特許出願の文献に開示された全ての内容は本明細書の一部として組み込まれる。
110 第1窒化ガリウム
111 N面
112 Ga面
113 ダメージ層
114 ブリスタ層
115 シード層
120 ボンディング酸化膜
130 仮基板
140 第2窒化ガリウム
Claims (9)
- 第1窒化ガリウムにボンディング酸化膜(bonding oxide)を形成するステップと、
前記ボンディング酸化膜が形成された第1窒化ガリウムの表面に少なくとも1回以上の第1イオン注入を行ってダメージ層(damage layer)を形成する第1窒化ガリウムの反り緩和(bow release)ステップと、
前記ボンディング酸化膜が形成された第1窒化ガリウムの表面に第2イオン注入を行ってブリスタ層(blister layer)を形成するステップと、
前記第1窒化ガリウムのボンディング酸化膜と仮基板を貼り合わせるステップと、
前記ブリスタ層を用いて前記第1窒化ガリウムを分離させてシード層(seed layer)を形成するステップと、
前記シード層を用いて第2窒化ガリウムを成長させてバルク窒化ガリウムを形成するステップとを含み、
前記第2イオン注入の加速電圧(Acceleration voltage)は、前記第1イオン注入の加速電圧(Acceleration voltage)より低く、
前記ブリスタ層が前記ダメージ層と比べて前記ボンディング酸化膜が形成された表面から近い位置に形成され、
前記第1窒化ガリウムは、N面(N−face)及びGa面(Ga−face)を含み、
前記第1イオン注入及び前記第2イオン注入は、前記第1窒化ガリウムのGa面に行われるものであり、
前記ブリスタ層を形成するステップは、前記ブリスタ層を前記第1窒化ガリウムの表面から0.1μm〜4μmの深さに形成して400℃〜800℃の温度で熱処理するステップをさらに含み、
前記シード層は、前記第1窒化ガリウムのGa面を使用することを特徴とする、窒化ガリウム基板の製造方法。 - 前記ボンディング酸化膜が形成された第1窒化ガリウムの表面に第1イオン注入を行ってダメージ層を形成する前記第1窒化ガリウムの反り緩和ステップは、
前記第1イオン注入の加速電圧(Acceleration voltage)に応じて、前記ダメージ層の厚さが調節されることを特徴とする、請求項1に記載の窒化ガリウム基板の製造方法。 - 前記ダメージ層の厚さに応じて、前記第1窒化ガリウムの反り(bow)の程度が調節されることを特徴とする、請求項2に記載の窒化ガリウム基板の製造方法。
- 前記ブリスタ層は、水素、ヘリウム、窒素、及びアルゴンのうちの少なくともいずれか1つの物質でイオン注入が行われることを特徴とする、請求項1に記載の窒化ガリウム基板の製造方法。
- 前記第1窒化ガリウムのボンディング酸化膜と仮基板を貼り合わせる前記ステップは、
200℃〜450℃の温度で5時間行われることを特徴とする、請求項1に記載の窒化ガリウム基板の製造方法。 - 前記シード層を用いて第2窒化ガリウムを成長させてバルク窒化ガリウムを形成する前記ステップは、
前記仮基板を除去するステップをさらに含むことを特徴とする、請求項1に記載の窒化ガリウム基板の製造方法。 - 前記仮基板は表面に非晶質薄膜を含むことを特徴とする、請求項1に記載の窒化ガリウム基板の製造方法。
- 前記非晶質薄膜は、SiOx(silicon oxide)、SiNx(silicon nitride)、及びSiON(silicon oxynitride)のうちの少なくともいずれか1つであることを特徴とする、請求項7に記載の窒化ガリウム基板の製造方法。
- 前記仮基板は、サファイア(sapphire)、GaAs(gallium arsenide)、スピネル(spinel)、Si(silicon)、InP(indium phosphide)、及びSiC(silicon carbide)のうちの少なくともいずれか1つであることを特徴とする、請求項1に記載の窒化ガリウム基板の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US15/991,505 | 2018-05-29 | ||
US15/991,505 US10510532B1 (en) | 2018-05-29 | 2018-05-29 | Method for manufacturing gallium nitride substrate using the multi ion implantation |
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JP2019206467A JP2019206467A (ja) | 2019-12-05 |
JP6831814B2 true JP6831814B2 (ja) | 2021-02-17 |
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US (1) | US10510532B1 (ja) |
JP (1) | JP6831814B2 (ja) |
CN (1) | CN110544623B (ja) |
DE (1) | DE102018213434A1 (ja) |
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CN112542379B (zh) * | 2020-12-09 | 2022-11-08 | 济南晶正电子科技有限公司 | 一种薄膜图形化工艺方法、复合薄膜及电子元器件 |
FR3128398B1 (fr) | 2021-10-21 | 2024-01-26 | Hexcel Reinforcements | Matériau de renfort comprenant une couche poreuse en un polymère thermoplastique réactif et procédés associés |
WO2023067282A1 (fr) | 2021-10-21 | 2023-04-27 | Hexcel Reinforcements | Materiau de renfort comprenant une couche poreuse en un polymere thermoplastique reactif et procedes associes |
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US20190371604A1 (en) | 2019-12-05 |
CN110544623B (zh) | 2023-07-25 |
JP2019206467A (ja) | 2019-12-05 |
CN110544623A (zh) | 2019-12-06 |
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