JP6783496B1 - ガス分析装置 - Google Patents

ガス分析装置 Download PDF

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Publication number
JP6783496B1
JP6783496B1 JP2020544959A JP2020544959A JP6783496B1 JP 6783496 B1 JP6783496 B1 JP 6783496B1 JP 2020544959 A JP2020544959 A JP 2020544959A JP 2020544959 A JP2020544959 A JP 2020544959A JP 6783496 B1 JP6783496 B1 JP 6783496B1
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Japan
Prior art keywords
plasma
gas
gas analyzer
sample
chamber
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JP2020544959A
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English (en)
Japanese (ja)
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JPWO2020196452A1 (ja
Inventor
高橋　直樹
直樹 高橋
プラカッシ スリダラ ムルティ
プラカッシ スリダラ ムルティ
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Atonarp Inc
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Atonarp Inc
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Priority to JP2020173778A priority Critical patent/JP7433652B2/ja
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Publication of JPWO2020196452A1 publication Critical patent/JPWO2020196452A1/ja
Priority to JP2024012522A priority patent/JP7618309B2/ja
Priority to JP2024228126A priority patent/JP2025060825A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
    • G01N27/626—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode using heat to ionise a gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348—Dielectric barrier discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32981—Gas analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/04—Arrangements for introducing or extracting samples to be analysed, e.g. vacuum locks; Arrangements for external adjustment of electron- or ion-optical components
    • H01J49/0422—Arrangements for introducing or extracting samples to be analysed, e.g. vacuum locks; Arrangements for external adjustment of electron- or ion-optical components for gaseous samples
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H01J49/34—Dynamic spectrometers
    • H01J49/42—Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electrochemistry (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
JP2020544959A 2019-03-25 2020-03-24 ガス分析装置 Active JP6783496B1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2020173778A JP7433652B2 (ja) 2019-03-25 2020-10-15 ガス分析装置
JP2024012522A JP7618309B2 (ja) 2019-03-25 2024-01-31 ガス分析装置
JP2024228126A JP2025060825A (ja) 2019-03-25 2024-12-25 ガス分析装置を有するシステム

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019057148 2019-03-25
JP2019057148 2019-03-25
PCT/JP2020/012839 WO2020196452A1 (ja) 2019-03-25 2020-03-24 ガス分析装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020173778A Division JP7433652B2 (ja) 2019-03-25 2020-10-15 ガス分析装置

Publications (2)

Publication Number Publication Date
JP6783496B1 true JP6783496B1 (ja) 2020-11-11
JPWO2020196452A1 JPWO2020196452A1 (ja) 2021-04-08

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JP2020544959A Active JP6783496B1 (ja) 2019-03-25 2020-03-24 ガス分析装置
JP2020173778A Active JP7433652B2 (ja) 2019-03-25 2020-10-15 ガス分析装置
JP2024012522A Active JP7618309B2 (ja) 2019-03-25 2024-01-31 ガス分析装置
JP2024228126A Pending JP2025060825A (ja) 2019-03-25 2024-12-25 ガス分析装置を有するシステム

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JP2020173778A Active JP7433652B2 (ja) 2019-03-25 2020-10-15 ガス分析装置
JP2024012522A Active JP7618309B2 (ja) 2019-03-25 2024-01-31 ガス分析装置
JP2024228126A Pending JP2025060825A (ja) 2019-03-25 2024-12-25 ガス分析装置を有するシステム

Country Status (6)

Country Link
US (3) US11557469B2 (https=)
JP (4) JP6783496B1 (https=)
KR (4) KR20250061862A (https=)
CN (3) CN116148335A (https=)
TW (3) TWI888050B (https=)
WO (1) WO2020196452A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI888050B (zh) * 2019-03-25 2025-06-21 日商亞多納富有限公司 製程系統
GB2583897A (en) * 2019-04-05 2020-11-18 Servomex Group Ltd Glow plasma stabilisation
US11081315B2 (en) * 2019-06-14 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Ion impantation gas supply system
CN112326772A (zh) * 2020-11-09 2021-02-05 上海裕达实业有限公司 用于固体材料直接测试的等离子质谱仪系统及测试方法
CN117256038A (zh) * 2021-03-31 2023-12-19 英福康有限公司 用于在大的压力范围内产生等离子体的设备和方法以及用于借助于这样的设备进行光学气体分析/检测的系统和方法
US12469751B2 (en) 2021-06-03 2025-11-11 Applied Materials, Inc. Apparatus to detect and quantify radical concentration in semiconductor processing systems
JP7725306B2 (ja) * 2021-09-14 2025-08-19 東京エレクトロン株式会社 基板処理システム及びガス計測方法
KR20240088888A (ko) * 2021-10-29 2024-06-20 아토나프 가부시키가이샤 가스 분석 장치 및 제어 방법
WO2024019479A1 (ko) * 2022-07-18 2024-01-25 차동호 가스분석장치 및 이를 포함하는 기판처리시스템
KR102734665B1 (ko) * 2022-07-18 2024-11-27 차동호 가스분석장치 및 이를 포함하는 기판처리시스템
KR102667398B1 (ko) * 2022-07-18 2024-05-20 차동호 가스분석장치 및 이를 포함하는 기판처리시스템
KR102734657B1 (ko) * 2022-07-18 2024-11-27 차동호 가스분석장치 및 이를 포함하는 기판처리시스템
TW202501613A (zh) * 2023-04-25 2025-01-01 日商亞多納富有限公司 氣體分析器設備
US20250138429A1 (en) * 2023-10-31 2025-05-01 Tokyo Electron Limited Endpoint detection in dry development of photoresist
US20250308867A1 (en) * 2024-03-29 2025-10-02 Tokyo Electron Limited High-performance adaptable sampling system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005535071A (ja) * 2002-07-31 2005-11-17 ヴァリアン オーストラリア ピーティーワイ．エルティーディー． 質量分光装置および方法

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692630A (en) * 1986-05-27 1987-09-08 Inficon Leybold-Heraeus Wavelength specific detection system for measuring the partial pressure of a gas excited by an electron beam
JP2952894B2 (ja) * 1989-07-03 1999-09-27 富士通株式会社 真空装置およびプロセスチャンバ内のガス分析方法
US5342580A (en) * 1990-04-17 1994-08-30 Alan Brenner Apparatus and method for measuring the amount of gas adsorbed on or desorbed from a solid and reactions of a gas with a solid
JPH0737821A (ja) * 1993-07-20 1995-02-07 Hitachi Ltd 薄膜製造装置及び半導体装置の製造方法
JPH07122536A (ja) * 1993-10-21 1995-05-12 Hitachi Ltd 半導体装置の製造装置
JP2872637B2 (ja) * 1995-07-10 1999-03-17 アプライド マテリアルズ インコーポレイテッド マイクロ波プラズマベースアプリケータ
JP3550457B2 (ja) 1996-03-29 2004-08-04 株式会社アルバック 浮遊電位基板入射イオンのエネルギー及び質量の分析法及び装置
US5641546A (en) * 1996-05-06 1997-06-24 Hughes Aircraft Company Passivation of electronic modules using high density plasmas
US6534007B1 (en) * 1997-08-01 2003-03-18 Applied Komatsu Technology, Inc. Method and apparatus for detecting the endpoint of a chamber cleaning
US6748334B1 (en) * 1999-12-06 2004-06-08 Jorge E. Perez Specialty gas analysis system
US7257987B2 (en) * 2000-01-25 2007-08-21 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University Method and apparatus for sample analysis
US6865926B2 (en) * 2000-01-25 2005-03-15 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University Method and apparatus for sample analysis
US6627464B2 (en) * 2001-02-07 2003-09-30 Eni Technology, Inc. Adaptive plasma characterization system
JP2003086574A (ja) * 2001-09-07 2003-03-20 Mitsubishi Electric Corp 半導体処理装置のガス分析方法およびその装置
US6716727B2 (en) * 2001-10-26 2004-04-06 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for plasma doping and ion implantation in an integrated processing system
US6686594B2 (en) * 2001-10-29 2004-02-03 Air Products And Chemicals, Inc. On-line UV-Visible light halogen gas analyzer for semiconductor processing effluent monitoring
US6975393B2 (en) * 2003-03-11 2005-12-13 Verity Instruments, Inc. Method and apparatus for implementing an afterglow emission spectroscopy monitor
JP2005033096A (ja) * 2003-07-10 2005-02-03 Ricoh Opt Ind Co Ltd 発光を利用したドライエッチング方法、ドライエッチング制御装置及びその制御装置を備えたドライエッチング装置
US20080223409A1 (en) * 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
US7820981B2 (en) * 2003-12-12 2010-10-26 Semequip, Inc. Method and apparatus for extending equipment uptime in ion implantation
US7878145B2 (en) * 2004-06-02 2011-02-01 Varian Semiconductor Equipment Associates, Inc. Monitoring plasma ion implantation systems for fault detection and process control
US7153709B1 (en) * 2004-08-31 2006-12-26 Advanced Micro Devices, Inc. Method and apparatus for calibrating degradable components using process state data
US7453059B2 (en) 2006-03-10 2008-11-18 Varian Semiconductor Equipment Associates, Inc. Technique for monitoring and controlling a plasma process
NZ573217A (en) * 2006-05-05 2011-11-25 Plascoenergy Ip Holdings S L Bilbao Schaffhausen Branch A facility for conversion of carbonaceous feedstock into a reformulated syngas containing CO and H2
TWI484529B (zh) * 2006-11-13 2015-05-11 Mks Instr Inc 離子阱質譜儀、利用其得到質譜之方法、離子阱、捕捉離子阱內之離子之方法和設備
US9997325B2 (en) * 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
JP5596402B2 (ja) * 2010-04-19 2014-09-24 株式会社日立ハイテクノロジーズ 分析装置、イオン化装置及び分析方法
US9645285B2 (en) 2011-07-22 2017-05-09 Satisloh Ag Optical article comprising a surfactant-based temporary antifog coating with an improved durability
JP5764433B2 (ja) * 2011-08-26 2015-08-19 株式会社日立ハイテクノロジーズ 質量分析装置及び質量分析方法
JP5948053B2 (ja) 2011-12-26 2016-07-06 株式会社日立ハイテクノロジーズ 質量分析装置及び質量分析方法
DE102012200211A1 (de) 2012-01-09 2013-07-11 Carl Zeiss Nts Gmbh Vorrichtung und Verfahren zur Oberflächenbearbeitung eines Substrates
US9093253B2 (en) * 2012-12-31 2015-07-28 908 Devices Inc. High pressure mass spectrometry systems and methods
US8525111B1 (en) * 2012-12-31 2013-09-03 908 Devices Inc. High pressure mass spectrometry systems and methods
US9099286B2 (en) * 2012-12-31 2015-08-04 908 Devices Inc. Compact mass spectrometer
US10032872B2 (en) * 2013-05-17 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
US8921774B1 (en) * 2014-05-02 2014-12-30 908 Devices Inc. High pressure mass spectrometry systems and methods
US8816272B1 (en) * 2014-05-02 2014-08-26 908 Devices Inc. High pressure mass spectrometry systems and methods
JP6584832B2 (ja) 2014-06-27 2019-10-02 株式会社堀場製作所 グロー放電発光分析装置、試料ホルダ及びグロー放電発生方法
DE112015003618B4 (de) * 2014-08-05 2022-05-12 Micromass Uk Limited Verfahren zum Einführen von Ionen in einen Vakuumbereich eines Massenspektrometers
TWI652362B (zh) * 2014-10-28 2019-03-01 日商半導體能源研究所股份有限公司 氧化物及其製造方法
TWI686874B (zh) * 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
US9910022B2 (en) * 2015-07-17 2018-03-06 Sanghwan Howard Kim Real time ozone layer monitoring using ion mobility spectrometry
US10871477B2 (en) * 2015-08-20 2020-12-22 The United States Of America, As Represented By The Secretary Of The Navy Contaminant cleaning systems and related methods using one or more reactive substances, reaction byproduct measurements, and differential pressure or vacuum transfer of the reactive substances and reaction byproducts
JP2017107816A (ja) 2015-12-11 2017-06-15 株式会社堀場エステック 熱電子放出用フィラメント、四重極質量分析計、及び残留ガス分析方法
DE102015122155B4 (de) * 2015-12-17 2018-03-08 Jan-Christoph Wolf Verwendung einer Ionisierungsvorrichtung
DE102016109974A1 (de) * 2016-05-31 2017-11-30 Schott Ag Verfahren zur Herstellung eines Glasproduktes sowie verfahrensgemäß erhaltenes Glasprodukt
US9972478B2 (en) * 2016-09-16 2018-05-15 Lam Research Corporation Method and process of implementing machine learning in complex multivariate wafer processing equipment
KR102732327B1 (ko) * 2017-02-21 2024-11-19 칼 짜이스 에스엠티 게엠베하 공정의 실시간 모니터링 방법 및 질량 분광계
KR20190121864A (ko) * 2017-03-17 2019-10-28 도쿄엘렉트론가부시키가이샤 에칭 메트릭 향상을 위한 표면 개질 제어
CN110476088B (zh) 2017-03-27 2021-02-19 富士胶片株式会社 光学薄膜、光学元件、光学系统及光学薄膜的制造方法
JP6995491B2 (ja) * 2017-04-21 2022-01-14 キヤノン株式会社 光学薄膜、光学素子、光学素子の製造方法
US11201045B2 (en) * 2017-06-16 2021-12-14 Plasmion Gmbh Apparatus and method for ionizing an analyte, and apparatus and method for analysing an ionized analyte
US11335575B2 (en) * 2017-08-25 2022-05-17 Inficon, Inc. Unconsumed precursor monitoring
CN109243964B (zh) * 2018-10-18 2021-02-09 株式会社岛津制作所 介质阻挡放电离子源、分析仪器及电离方法
US11646175B2 (en) * 2019-02-15 2023-05-09 Axcelis Technologies, Inc. Method of mixing upstream and downstream current measurements for inference of the beam current at the bend of an optical element for realtime dose control
TWI888050B (zh) * 2019-03-25 2025-06-21 日商亞多納富有限公司 製程系統
US20210005435A1 (en) * 2019-07-02 2021-01-07 Applied Materials, Inc. Methods, apparatus, and systems for processing a substrate
WO2021150331A1 (en) * 2020-01-23 2021-07-29 Lam Research Corporation Protective coating for a semiconductor reaction chamber
US11430643B2 (en) * 2020-09-29 2022-08-30 Tokyo Electron Limited Quantification of processing chamber species by electron energy sweep

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005535071A (ja) * 2002-07-31 2005-11-17 ヴァリアン オーストラリア ピーティーワイ．エルティーディー． 質量分光装置および方法

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JP2021007108A (ja) 2021-01-21
JP2025060825A (ja) 2025-04-10
CN113678228A (zh) 2021-11-19
US20220044919A1 (en) 2022-02-10
WO2020196452A1 (ja) 2020-10-01
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KR20240026251A (ko) 2024-02-27
US12368032B2 (en) 2025-07-22
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JP7618309B2 (ja) 2025-01-21
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JPWO2020196452A1 (ja) 2021-04-08
US20240266155A1 (en) 2024-08-08
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US11557469B2 (en) 2023-01-17
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