JPWO2020196452A1 - ガス分析装置 - Google Patents
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Abstract
Description
Claims (16)
- 誘電性の壁体構造を備え、測定対象のサンプルガスのみが流入するサンプルチャンバーと、
前記誘電性の壁体構造を介して電場および/または磁場により、減圧された前記サンプルチャンバー内でプラズマを生成するプラズマ生成機構と、
生成された前記プラズマを介して前記サンプルガスを分析する分析ユニットとを有する、ガス分析装置。 - 請求項1において、
前記サンプルチャンバーに、プロセスからの前記サンプルガスのみが流入するように構成されたガス入力ユニットを有する、ガス分析装置。 - 請求項1または2において、
前記誘電性の壁体構造は、石英、酸化アルミニウムおよび窒化ケイ素の少なくともいずれかを含む、ガス分析装置。 - 請求項1ないし3のいずれかにおいて、
前記プラズマ生成機構は、誘電結合プラズマ、誘電体バリア放電および電子サイクロトロン共鳴の少なくともいずれかによりプラズマを発生する機構を含む、ガス分析装置。 - 請求項1ないし4のいずれかにおいて、
前記サンプルチャンバーは全長が1−100mm、直径が1−100mmである、ガス分析装置。 - 請求項1ないし5のいずれかにおいて、
前記分析ユニットは、前記プラズマ中のイオン化したガスをフィルタリングするフィルターユニットと、
フィルタリングされたイオンを検出するディテクタユニットとを含む、ガス分析装置。 - 請求項6において、
前記フィルターユニットと前記サンプルチャンバーとの間に配置されたエネルギーフィルタをさらに有する、ガス分析装置。 - 請求項1ないし7のいずれかに記載のガス分析装置を有する、プロセスモニタリング装置。
- 請求項1ないし7のいずれかに記載のガス分析装置と、
プラズマプロセスが実施されるプロセスチャンバーであって、前記ガス分析装置に前記サンプルガスが供給されるプロセスチャンバーとを有するシステム。 - 請求項9において、
前記プロセスチャンバー内で実施される少なくとも1つのプラズマプロセスを、前記ガス分析装置の測定結果に基づいて制御するプロセス制御ユニットを有する、システム。 - 請求項10において、
前記プロセス制御ユニットは、前記少なくとも1つのプラズマプロセスのエンドポイントを、前記少なくとも1つのプラズマプロセスの副生成物の前記ガス分析装置による測定結果により判断するユニットを含む、システム。 - プラズマプロセスを実施するプロセスチャンバーを有するシステムの制御方法であって、
前記システムは、前記プロセスチャンバーからのサンプルガスのみが流入する、前記プロセスチャンバーとは異なるサンプルチャンバーを含むガス分析装置を有し、
当該方法は、
前記ガス分析装置の測定結果に基づいて前記プロセスチャンバー内で実施されるプラズマプロセスを制御することを有する、方法。 - 請求項12において、
前記プラズマプロセスを制御することは、少なくとも1つのプラズマプロセスのエンドポイントを、前記少なくとも1つのプラズマプロセスの副生成物の前記ガス分析装置による測定結果により判断することを含む、方法。 - 請求項13において、
前記少なくとも1つのプラズマプロセスは、エッチング、膜生成、およびクリーニングの少なくとも1つを含む、方法。 - 請求項12ないし14のいずれかにおいて、
前記サンプルチャンバーにおいて前記プロセスチャンバーとは独立したプラズマを生成することを有する、方法。 - プラズマプロセスを実施するプロセスチャンバーを有するシステムを制御するプログラムであって、
前記システムは、前記プロセスチャンバーからのサンプルガスのみが流入する、前記プロセスチャンバーとは異なるサンプルチャンバーを含むガス分析装置を有し、
当該プログラムは、
前記ガス分析装置の測定結果に基づいて前記プロセスチャンバー内で実施されるプラズマプロセスを制御する命令を有する、プログラム。
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JP2020173778A JP7433652B2 (ja) | 2019-03-25 | 2020-10-15 | ガス分析装置 |
JP2024012522A JP2024050730A (ja) | 2019-03-25 | 2024-01-31 | ガス分析装置 |
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