JP6730999B2 - 過酷な環境での電子機器用途のための高信頼性無鉛はんだ合金 - Google Patents
過酷な環境での電子機器用途のための高信頼性無鉛はんだ合金 Download PDFInfo
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- JP6730999B2 JP6730999B2 JP2017557168A JP2017557168A JP6730999B2 JP 6730999 B2 JP6730999 B2 JP 6730999B2 JP 2017557168 A JP2017557168 A JP 2017557168A JP 2017557168 A JP2017557168 A JP 2017557168A JP 6730999 B2 JP6730999 B2 JP 6730999B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
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- C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
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- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/818—Bonding techniques
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/01049—Indium [In]
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- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01083—Bismuth [Bi]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562157302P | 2015-05-05 | 2015-05-05 | |
| US62/157,302 | 2015-05-05 | ||
| US15/147,137 US11229979B2 (en) | 2015-05-05 | 2016-05-05 | High reliability lead-free solder alloys for harsh environment electronics applications |
| US15/147,137 | 2016-05-05 | ||
| PCT/US2016/030915 WO2016179358A1 (en) | 2015-05-05 | 2016-05-05 | High reliability lead-free solder alloys for harsh environment electronics applications |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018518368A JP2018518368A (ja) | 2018-07-12 |
| JP2018518368A5 JP2018518368A5 (enExample) | 2019-05-30 |
| JP6730999B2 true JP6730999B2 (ja) | 2020-07-29 |
Family
ID=56027204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017557168A Active JP6730999B2 (ja) | 2015-05-05 | 2016-05-05 | 過酷な環境での電子機器用途のための高信頼性無鉛はんだ合金 |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US11229979B2 (enExample) |
| JP (1) | JP6730999B2 (enExample) |
| KR (2) | KR102447392B1 (enExample) |
| MY (2) | MY205097A (enExample) |
| WO (1) | WO2016179358A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024034689A1 (ja) | 2022-08-12 | 2024-02-15 | 千住金属工業株式会社 | はんだ合金、はんだペースト及びはんだ継手 |
| KR20250041178A (ko) | 2022-08-12 | 2025-03-25 | 센주긴조쿠고교 가부시키가이샤 | 땜납 합금, 땜납 페이스트 및 땜납 조인트 |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112016000614T5 (de) | 2015-09-17 | 2017-10-19 | Fuji Electric Co., Ltd. | Lotmaterial für Halbleiterelemente |
| ES2840124T3 (es) | 2016-03-22 | 2021-07-06 | Tamura Seisakusho Kk | Aleación de soldadura sin plomo, composición de fundente, composición de pasta de soldadura, placa de circuitos electrónicos y controlador electrónico |
| FR3061989B1 (fr) * | 2017-01-18 | 2020-02-14 | Safran | Procede de fabrication d'un module electronique de puissance par fabrication additive, substrat et module associes |
| US20180153951A1 (en) * | 2016-12-05 | 2018-06-07 | Mead Johnson Nutrition Company | Methods for Inducing Adipocyte Browning, Improving Metabolic Flexibility, and Reducing Detrimental White Adipocyte Tissue Deposition and Dysfunction |
| JP6230737B1 (ja) * | 2017-03-10 | 2017-11-15 | 株式会社タムラ製作所 | 鉛フリーはんだ合金、ソルダペースト及び電子回路基板 |
| WO2018168858A1 (ja) * | 2017-03-17 | 2018-09-20 | 富士電機株式会社 | はんだ材 |
| CN110430968B (zh) | 2017-03-31 | 2021-07-16 | 千住金属工业株式会社 | 软钎料合金、焊膏和钎焊接头 |
| KR102286739B1 (ko) * | 2017-08-17 | 2021-08-05 | 현대자동차 주식회사 | 무연 솔더 조성물 |
| US10456872B2 (en) | 2017-09-08 | 2019-10-29 | Tamura Corporation | Lead-free solder alloy, electronic circuit substrate, and electronic device |
| EP3476520B1 (en) * | 2017-09-14 | 2022-06-22 | Tamura Corporation | Lead-free solder alloy, electronic circuit board, and electronic control device |
| JP6998557B2 (ja) * | 2017-09-29 | 2022-01-18 | パナソニックIpマネジメント株式会社 | はんだ合金およびそれを用いた接合構造体 |
| JP6349615B1 (ja) | 2017-10-03 | 2018-07-04 | 株式会社弘輝 | はんだ合金、はんだ接合材料及び電子回路基板 |
| JP6427752B1 (ja) * | 2018-03-06 | 2018-11-28 | 株式会社弘輝 | はんだ合金、はんだ接合材料及び電子回路基板 |
| WO2020115653A1 (en) * | 2018-12-06 | 2020-06-11 | Slovenská Technická Univerzita V Bratislave | Active soft solder for ultrasonic soldering at higher application temperatures |
| TWI725664B (zh) * | 2018-12-14 | 2021-04-21 | 日商千住金屬工業股份有限公司 | 焊料合金、焊料膏、焊料預形體及焊料接頭 |
| JP6731034B2 (ja) * | 2018-12-25 | 2020-07-29 | 株式会社タムラ製作所 | 鉛フリーはんだ合金、はんだ接合用材料、電子回路実装基板及び電子制御装置 |
| KR102187085B1 (ko) * | 2019-01-24 | 2020-12-04 | 주식회사 경동엠텍 | 고온 및 진동환경에 적합한 무연솔더 합금 조성물 및 그 제조방법 |
| US11752579B2 (en) | 2019-02-26 | 2023-09-12 | Indium Corporation | High reliability leadfree solder alloys for harsh service conditions |
| TWI742813B (zh) * | 2019-09-02 | 2021-10-11 | 美商阿爾發金屬化工公司 | 高溫超高可靠性合金 |
| CN117480029A (zh) * | 2021-06-11 | 2024-01-30 | 铟泰公司 | 混合焊料合金粉末的高可靠性无铅焊膏 |
| JP7133739B1 (ja) | 2021-11-30 | 2022-09-08 | 株式会社タムラ製作所 | 接合部、電子回路基板及び半導体パッケージ |
| JP7079889B1 (ja) * | 2021-11-30 | 2022-06-02 | 株式会社タムラ製作所 | はんだ合金、はんだ接合材、ソルダペースト及び半導体パッケージ |
| JPWO2024101041A1 (enExample) * | 2022-11-07 | 2024-05-16 | ||
| TW202526047A (zh) | 2023-12-20 | 2025-07-01 | 美商阿爾發金屬化工公司 | 焊料接點 |
| JP7640921B1 (ja) * | 2024-07-23 | 2025-03-06 | 千住金属工業株式会社 | はんだ合金、はんだペースト、はんだボール、はんだプリフォーム、はんだ継手、車載電子回路、ecu電子回路、車載電子回路装置、およびecu電子回路装置 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS56165588A (en) | 1980-05-26 | 1981-12-19 | Aoki Metal:Kk | High temperature solder for copper tube joining |
| JP3027441B2 (ja) | 1991-07-08 | 2000-04-04 | 千住金属工業株式会社 | 高温はんだ |
| WO1997009455A1 (en) | 1995-09-01 | 1997-03-13 | Sarnoff Corporation | Soldering composition |
| KR19980068127A (ko) | 1997-02-15 | 1998-10-15 | 김광호 | 납땜용 무연 합금 |
| US6179935B1 (en) | 1997-04-16 | 2001-01-30 | Fuji Electric Co., Ltd. | Solder alloys |
| JP3296289B2 (ja) | 1997-07-16 | 2002-06-24 | 富士電機株式会社 | はんだ合金 |
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- 2016-05-05 KR KR1020227032815A patent/KR102685941B1/ko active Active
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024034689A1 (ja) | 2022-08-12 | 2024-02-15 | 千住金属工業株式会社 | はんだ合金、はんだペースト及びはんだ継手 |
| KR20250041178A (ko) | 2022-08-12 | 2025-03-25 | 센주긴조쿠고교 가부시키가이샤 | 땜납 합금, 땜납 페이스트 및 땜납 조인트 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018518368A (ja) | 2018-07-12 |
| KR20220135252A (ko) | 2022-10-06 |
| KR102447392B1 (ko) | 2022-09-27 |
| US20220331913A1 (en) | 2022-10-20 |
| US11229979B2 (en) | 2022-01-25 |
| US20200094353A1 (en) | 2020-03-26 |
| MY205097A (en) | 2024-10-01 |
| MY186064A (en) | 2021-06-18 |
| US11413709B2 (en) | 2022-08-16 |
| KR102685941B1 (ko) | 2024-07-17 |
| US20250001530A1 (en) | 2025-01-02 |
| US12090579B2 (en) | 2024-09-17 |
| WO2016179358A1 (en) | 2016-11-10 |
| US20160325384A1 (en) | 2016-11-10 |
| KR20180006928A (ko) | 2018-01-19 |
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