JP4890221B2 - ダイボンド材 - Google Patents
ダイボンド材 Download PDFInfo
- Publication number
- JP4890221B2 JP4890221B2 JP2006329946A JP2006329946A JP4890221B2 JP 4890221 B2 JP4890221 B2 JP 4890221B2 JP 2006329946 A JP2006329946 A JP 2006329946A JP 2006329946 A JP2006329946 A JP 2006329946A JP 4890221 B2 JP4890221 B2 JP 4890221B2
- Authority
- JP
- Japan
- Prior art keywords
- solder
- solder alloy
- lead
- weight
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 239000000463 material Substances 0.000 title claims abstract description 22
- 229910000679 solder Inorganic materials 0.000 claims abstract description 127
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 92
- 239000000956 alloy Substances 0.000 claims abstract description 92
- 239000010949 copper Substances 0.000 claims description 64
- 229910052802 copper Inorganic materials 0.000 claims description 47
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 37
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 104
- 229910052759 nickel Inorganic materials 0.000 description 41
- 239000000203 mixture Substances 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 15
- 229910052733 gallium Inorganic materials 0.000 description 14
- 238000010828 elution Methods 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000035882 stress Effects 0.000 description 8
- 238000009864 tensile test Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229910000765 intermetallic Inorganic materials 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 229910020888 Sn-Cu Inorganic materials 0.000 description 2
- 229910019204 Sn—Cu Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000009863 impact test Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Description
Cu0.3重量%、Ni0.05重量%、Ga0.1重量%、残部Snから成る参考例1のはんだ合金と、Cu0.3重量%、Ni0.05重量%、残部Snから成る比較例Aのはんだ合金のそれぞれに対して引張試験を行い、その引張力(強度)と合金の伸びを測定したところ、表1の結果が得られた。尚、試験を行うために必要となった引張力は合金自体の硬さとして評価する。
Cu0.3重量%、Ni0.1重量%、Ga0.1重量%、残部Snから成る参考例2のはんだ合金と、Cu0.3重量%、Ni0.1重量%、残部Snから成る比較例Bのはんだ合金のそれぞれに対して試験1と同様の引張試験を行ったところ、表2の結果が得られた。
Cu0.7重量%、Ni0.05重量%、Ga0.01重量%、残部Snから成る参考例3のはんだ合金と、Cu0.7重量%、Ni0.05重量%、Ga0.1重量%、残部Snから成る参考例4のはんだ合金と、Cu0.7重量%、Ni0.05重量%、残部Snから成る比較例Cのはんだ合金のそれぞれに対して上記各試験と同様の引張試験を行ったところ、表3の結果が得られた。
Cu0.5重量%、Ni0.05重量%、Ga1重量%、残部Snから成る参考例5のはんだ合金と、Cu0.5重量%、Ni0.05重量%、残部Snから成る比較例Dのはんだ合金のそれぞれに対して上記各試験と同様の引張試験を行ったところ、表4の結果が得られた。
Cu0.7重量%、Ni0.05重量%、残部Snから成る組成のはんだ合金0.3gを銅板或いはニッケル板の上に置き、ロジン系フラックスを用いて240℃で2分間ホットプレート上ではんだ付けした。図5(a)は、上記はんだ合金を銅板にはんだ付けした接合界面の拡大写真であり、同図(b)はニッケル板にはんだ付けした接合界面の拡大写真である。このはんだ合金は銅板に対してはニッケルバリアが作用しており、銅板からの銅の溶出が抑制されている(図5(a))。従って、銅板に対しては十分な接合強度が得られていると言える。しかし、ニッケル板に対してはバリア効果が作用しておらず、ニッケル板からニッケルが溶出している(図5(b))。そのため、ニッケル板との接合界面は脆く、ヒートサイクル時に界面剥離を生じる虞がある。
2 シート状はんだ
3 銅板
Claims (3)
- Ni0.002重量%以上0.2重量%以下、Ga0.001以上1重量%未満、残部Snからなり、銅を含まない無鉛はんだ合金であることを特徴とするダイボンド材。
- 好ましくはGaが0.005重量%以上0.2重量%以下の範囲である請求項1記載のダイボンド材。
- 好ましくはNiが0.02重量%以上0.1重量%以下の範囲である請求項1または2記載のダイボンド材。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006329946A JP4890221B2 (ja) | 2006-12-06 | 2006-12-06 | ダイボンド材 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006329946A JP4890221B2 (ja) | 2006-12-06 | 2006-12-06 | ダイボンド材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008142721A JP2008142721A (ja) | 2008-06-26 |
JP4890221B2 true JP4890221B2 (ja) | 2012-03-07 |
Family
ID=39603474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006329946A Active JP4890221B2 (ja) | 2006-12-06 | 2006-12-06 | ダイボンド材 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4890221B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101879668B (zh) * | 2010-06-01 | 2012-05-30 | 贵研铂业股份有限公司 | 一种镓系钎料及其应用 |
CN101862921B (zh) * | 2010-06-25 | 2012-02-15 | 南京航空航天大学 | 含Pr、Sr和Ga的Sn-Cu-Ni无铅钎料 |
JP5784109B2 (ja) | 2011-04-15 | 2015-09-24 | 株式会社日本スペリア社 | 鉛フリーはんだ合金 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU757312B2 (en) * | 1998-03-26 | 2003-02-13 | Nihon Superior Sha Co., Ltd. | Leadless solder |
JP2000197988A (ja) * | 1998-03-26 | 2000-07-18 | Nihon Superior Co Ltd | 無鉛はんだ合金 |
JP4039594B2 (ja) * | 1998-05-22 | 2008-01-30 | 株式会社日本スペリア社 | 無鉛はんだ用添加合金 |
JP2002018589A (ja) * | 2000-07-03 | 2002-01-22 | Senju Metal Ind Co Ltd | 鉛フリーはんだ合金 |
-
2006
- 2006-12-06 JP JP2006329946A patent/JP4890221B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2008142721A (ja) | 2008-06-26 |
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