JP6727771B2 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP6727771B2
JP6727771B2 JP2015159755A JP2015159755A JP6727771B2 JP 6727771 B2 JP6727771 B2 JP 6727771B2 JP 2015159755 A JP2015159755 A JP 2015159755A JP 2015159755 A JP2015159755 A JP 2015159755A JP 6727771 B2 JP6727771 B2 JP 6727771B2
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Japan
Prior art keywords
signal
circuit
potential
comparison
imaging device
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Expired - Fee Related
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JP2015159755A
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English (en)
Japanese (ja)
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JP2017038312A (ja
JP2017038312A5 (enExample
Inventor
恒一 中村
恒一 中村
岩根　正晃
正晃 岩根
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2015159755A priority Critical patent/JP6727771B2/ja
Priority to US15/217,537 priority patent/US9966398B2/en
Publication of JP2017038312A publication Critical patent/JP2017038312A/ja
Priority to US15/936,386 priority patent/US10811448B2/en
Publication of JP2017038312A5 publication Critical patent/JP2017038312A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Analogue/Digital Conversion (AREA)
  • Manipulation Of Pulses (AREA)
JP2015159755A 2015-08-13 2015-08-13 撮像装置 Expired - Fee Related JP6727771B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015159755A JP6727771B2 (ja) 2015-08-13 2015-08-13 撮像装置
US15/217,537 US9966398B2 (en) 2015-08-13 2016-07-22 Solid-state imaging device
US15/936,386 US10811448B2 (en) 2015-08-13 2018-03-26 Solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015159755A JP6727771B2 (ja) 2015-08-13 2015-08-13 撮像装置

Publications (3)

Publication Number Publication Date
JP2017038312A JP2017038312A (ja) 2017-02-16
JP2017038312A5 JP2017038312A5 (enExample) 2018-08-02
JP6727771B2 true JP6727771B2 (ja) 2020-07-22

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JP2015159755A Expired - Fee Related JP6727771B2 (ja) 2015-08-13 2015-08-13 撮像装置

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US (2) US9966398B2 (enExample)
JP (1) JP6727771B2 (enExample)

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JP7005125B2 (ja) 2016-04-22 2022-01-21 キヤノン株式会社 撮像素子、撮像システム、および撮像素子の製造方法
JP7286309B2 (ja) * 2018-12-18 2023-06-05 キヤノン株式会社 光電変換装置、光電変換システムおよび信号処理装置
WO2021064518A1 (ja) 2019-10-04 2021-04-08 株式会社半導体エネルギー研究所 表示モジュール、および電子機器
KR20220149405A (ko) * 2020-02-28 2022-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 촬상 장치, 및 표시 장치
JP2022119632A (ja) 2021-02-04 2022-08-17 キヤノン株式会社 光電変換装置、光電変換システムおよび移動体
JP7706947B2 (ja) 2021-06-16 2025-07-14 キヤノン株式会社 光電変換装置及び光電変換装置の駆動方法

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JP6245997B2 (ja) 2014-01-16 2017-12-13 キヤノン株式会社 固体撮像装置及び撮像システム
JP6057931B2 (ja) 2014-02-10 2017-01-11 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP6351288B2 (ja) 2014-02-17 2018-07-04 キヤノン株式会社 固体撮像装置及び撮像システム
JP6463000B2 (ja) * 2014-05-02 2019-01-30 キヤノン株式会社 固体撮像装置及び撮像システム
JP6362096B2 (ja) * 2014-06-25 2018-07-25 キヤノン株式会社 固体撮像装置、撮像システム及び固体撮像装置の駆動方法
JP6109125B2 (ja) 2014-08-20 2017-04-05 キヤノン株式会社 半導体装置、固体撮像装置、および撮像システム
JP6415187B2 (ja) 2014-08-29 2018-10-31 キヤノン株式会社 固体撮像装置および撮像システム
JP2016144151A (ja) 2015-02-04 2016-08-08 キヤノン株式会社 固体撮像装置の駆動方法、固体撮像装置およびカメラ

Also Published As

Publication number Publication date
US10811448B2 (en) 2020-10-20
JP2017038312A (ja) 2017-02-16
US9966398B2 (en) 2018-05-08
US20170048474A1 (en) 2017-02-16
US20180219037A1 (en) 2018-08-02

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