JP6698487B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6698487B2
JP6698487B2 JP2016186769A JP2016186769A JP6698487B2 JP 6698487 B2 JP6698487 B2 JP 6698487B2 JP 2016186769 A JP2016186769 A JP 2016186769A JP 2016186769 A JP2016186769 A JP 2016186769A JP 6698487 B2 JP6698487 B2 JP 6698487B2
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Japan
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semiconductor layer
layer
semiconductor
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region
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JP2016186769A
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English (en)
Japanese (ja)
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JP2018056163A5 (https=
JP2018056163A (ja
Inventor
藤井　秀紀
秀紀 藤井
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2016186769A priority Critical patent/JP6698487B2/ja
Priority to US15/480,593 priority patent/US9960158B2/en
Priority to DE102017212818.6A priority patent/DE102017212818B4/de
Priority to CN202210629378.2A priority patent/CN115064535B/zh
Priority to CN201710881263.1A priority patent/CN107871779A/zh
Publication of JP2018056163A publication Critical patent/JP2018056163A/ja
Publication of JP2018056163A5 publication Critical patent/JP2018056163A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

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  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP2016186769A 2016-09-26 2016-09-26 半導体装置 Active JP6698487B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016186769A JP6698487B2 (ja) 2016-09-26 2016-09-26 半導体装置
US15/480,593 US9960158B2 (en) 2016-09-26 2017-04-06 Semiconductor device
DE102017212818.6A DE102017212818B4 (de) 2016-09-26 2017-07-26 Halbleiteranordnung
CN202210629378.2A CN115064535B (zh) 2016-09-26 2017-09-26 半导体装置
CN201710881263.1A CN107871779A (zh) 2016-09-26 2017-09-26 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016186769A JP6698487B2 (ja) 2016-09-26 2016-09-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2018056163A JP2018056163A (ja) 2018-04-05
JP2018056163A5 JP2018056163A5 (https=) 2018-12-06
JP6698487B2 true JP6698487B2 (ja) 2020-05-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016186769A Active JP6698487B2 (ja) 2016-09-26 2016-09-26 半導体装置

Country Status (4)

Country Link
US (1) US9960158B2 (https=)
JP (1) JP6698487B2 (https=)
CN (2) CN107871779A (https=)
DE (1) DE102017212818B4 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7124339B2 (ja) 2018-02-28 2022-08-24 富士電機株式会社 半導体装置
JP7115124B2 (ja) * 2018-08-03 2022-08-09 株式会社デンソー 半導体装置の製造方法
JP7718052B2 (ja) * 2020-06-17 2025-08-05 富士電機株式会社 半導体装置および半導体装置の製造方法
CN117410326A (zh) * 2023-11-22 2024-01-16 陕西华茂半导体科技有限公司 一种具有软恢复特性的rc-igbt器件及制造方法
WO2026058799A1 (ja) * 2024-09-11 2026-03-19 富士電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS539360A (en) 1976-07-12 1978-01-27 Fuji System Drink flavor enhancing composition
JP2007184486A (ja) 2006-01-10 2007-07-19 Denso Corp 半導体装置
EP2073271A1 (en) * 2007-12-19 2009-06-24 ABB Technology AG Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor
JP5309360B2 (ja) 2008-07-31 2013-10-09 三菱電機株式会社 半導体装置およびその製造方法
WO2010035508A1 (ja) * 2008-09-29 2010-04-01 日本電気株式会社 半導体受光素子およびその製造方法
JP2010114248A (ja) 2008-11-06 2010-05-20 Toyota Central R&D Labs Inc 半導体装置
US8507352B2 (en) * 2008-12-10 2013-08-13 Denso Corporation Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode
JP5995435B2 (ja) 2011-08-02 2016-09-21 ローム株式会社 半導体装置およびその製造方法
CN104969360B (zh) * 2013-03-25 2018-04-20 富士电机株式会社 半导体装置
JP5867484B2 (ja) 2013-11-14 2016-02-24 トヨタ自動車株式会社 半導体装置の製造方法
JP6181597B2 (ja) 2014-04-28 2017-08-16 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
CN107078156A (zh) * 2015-01-05 2017-08-18 马克斯半导体股份有限公司 具有降低翘曲风险的反向导通闸控双极导通装置及方法
CN107251234B (zh) * 2015-02-09 2020-10-09 三菱电机株式会社 半导体装置

Also Published As

Publication number Publication date
CN107871779A (zh) 2018-04-03
DE102017212818B4 (de) 2022-06-23
CN115064535A (zh) 2022-09-16
JP2018056163A (ja) 2018-04-05
DE102017212818A1 (de) 2018-03-29
US9960158B2 (en) 2018-05-01
US20180090487A1 (en) 2018-03-29
CN115064535B (zh) 2024-11-15

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