CN107871779A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN107871779A
CN107871779A CN201710881263.1A CN201710881263A CN107871779A CN 107871779 A CN107871779 A CN 107871779A CN 201710881263 A CN201710881263 A CN 201710881263A CN 107871779 A CN107871779 A CN 107871779A
Authority
CN
China
Prior art keywords
semiconductor layer
layer
semiconductor
region
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710881263.1A
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English (en)
Chinese (zh)
Inventor
藤井秀纪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to CN202210629378.2A priority Critical patent/CN115064535B/zh
Publication of CN107871779A publication Critical patent/CN107871779A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
CN201710881263.1A 2016-09-26 2017-09-26 半导体装置 Pending CN107871779A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210629378.2A CN115064535B (zh) 2016-09-26 2017-09-26 半导体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016186769A JP6698487B2 (ja) 2016-09-26 2016-09-26 半導体装置
JP2016-186769 2016-09-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202210629378.2A Division CN115064535B (zh) 2016-09-26 2017-09-26 半导体装置

Publications (1)

Publication Number Publication Date
CN107871779A true CN107871779A (zh) 2018-04-03

Family

ID=61564416

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710881263.1A Pending CN107871779A (zh) 2016-09-26 2017-09-26 半导体装置
CN202210629378.2A Active CN115064535B (zh) 2016-09-26 2017-09-26 半导体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202210629378.2A Active CN115064535B (zh) 2016-09-26 2017-09-26 半导体装置

Country Status (4)

Country Link
US (1) US9960158B2 (https=)
JP (1) JP6698487B2 (https=)
CN (2) CN107871779A (https=)
DE (1) DE102017212818B4 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117410326A (zh) * 2023-11-22 2024-01-16 陕西华茂半导体科技有限公司 一种具有软恢复特性的rc-igbt器件及制造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7124339B2 (ja) 2018-02-28 2022-08-24 富士電機株式会社 半導体装置
JP7115124B2 (ja) * 2018-08-03 2022-08-09 株式会社デンソー 半導体装置の製造方法
JP7718052B2 (ja) * 2020-06-17 2025-08-05 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2026058799A1 (ja) * 2024-09-11 2026-03-19 富士電機株式会社 半導体装置および半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150132895A1 (en) * 2013-11-14 2015-05-14 Toyota Jidosha Kabushiki Kaisha Method for manufacturing semiconductor device
US20160211258A1 (en) * 2015-01-05 2016-07-21 Maxpower Semiconductor Inc. Reverse-Conducting Gated-Base Bipolar-Conduction Devices and Methods with Reduced Risk of Warping

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS539360A (en) 1976-07-12 1978-01-27 Fuji System Drink flavor enhancing composition
JP2007184486A (ja) 2006-01-10 2007-07-19 Denso Corp 半導体装置
EP2073271A1 (en) * 2007-12-19 2009-06-24 ABB Technology AG Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor
JP5309360B2 (ja) 2008-07-31 2013-10-09 三菱電機株式会社 半導体装置およびその製造方法
WO2010035508A1 (ja) * 2008-09-29 2010-04-01 日本電気株式会社 半導体受光素子およびその製造方法
JP2010114248A (ja) 2008-11-06 2010-05-20 Toyota Central R&D Labs Inc 半導体装置
US8507352B2 (en) * 2008-12-10 2013-08-13 Denso Corporation Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode
JP5995435B2 (ja) 2011-08-02 2016-09-21 ローム株式会社 半導体装置およびその製造方法
CN104969360B (zh) * 2013-03-25 2018-04-20 富士电机株式会社 半导体装置
JP6181597B2 (ja) 2014-04-28 2017-08-16 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
CN107251234B (zh) * 2015-02-09 2020-10-09 三菱电机株式会社 半导体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150132895A1 (en) * 2013-11-14 2015-05-14 Toyota Jidosha Kabushiki Kaisha Method for manufacturing semiconductor device
US20160211258A1 (en) * 2015-01-05 2016-07-21 Maxpower Semiconductor Inc. Reverse-Conducting Gated-Base Bipolar-Conduction Devices and Methods with Reduced Risk of Warping

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117410326A (zh) * 2023-11-22 2024-01-16 陕西华茂半导体科技有限公司 一种具有软恢复特性的rc-igbt器件及制造方法

Also Published As

Publication number Publication date
JP6698487B2 (ja) 2020-05-27
DE102017212818B4 (de) 2022-06-23
CN115064535A (zh) 2022-09-16
JP2018056163A (ja) 2018-04-05
DE102017212818A1 (de) 2018-03-29
US9960158B2 (en) 2018-05-01
US20180090487A1 (en) 2018-03-29
CN115064535B (zh) 2024-11-15

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Application publication date: 20180403