CN101884106B - 半导体模块 - Google Patents
半导体模块 Download PDFInfo
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- CN101884106B CN101884106B CN200880119702.4A CN200880119702A CN101884106B CN 101884106 B CN101884106 B CN 101884106B CN 200880119702 A CN200880119702 A CN 200880119702A CN 101884106 B CN101884106 B CN 101884106B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 239000002245 particle Substances 0.000 claims abstract description 65
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims description 113
- 239000011248 coating agent Substances 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 2
- 229910052805 deuterium Inorganic materials 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 238000005224 laser annealing Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 4
- 238000001465 metallisation Methods 0.000 abstract description 4
- 238000002513 implantation Methods 0.000 abstract 3
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 8
- 230000003139 buffering effect Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07117817A EP2045844A1 (en) | 2007-10-03 | 2007-10-03 | Semiconductor Module |
EP07117817.2 | 2007-10-03 | ||
PCT/EP2008/063137 WO2009043870A1 (en) | 2007-10-03 | 2008-10-01 | Semiconductor module |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101884106A CN101884106A (zh) | 2010-11-10 |
CN101884106B true CN101884106B (zh) | 2013-01-02 |
Family
ID=39304807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880119702.4A Active CN101884106B (zh) | 2007-10-03 | 2008-10-01 | 半导体模块 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8450793B2 (zh) |
EP (2) | EP2045844A1 (zh) |
JP (1) | JP2010541266A (zh) |
CN (1) | CN101884106B (zh) |
WO (1) | WO2009043870A1 (zh) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5365009B2 (ja) | 2008-01-23 | 2013-12-11 | 富士電機株式会社 | 半導体装置およびその製造方法 |
US8766413B2 (en) * | 2009-11-02 | 2014-07-01 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
WO2012136848A1 (en) * | 2011-04-06 | 2012-10-11 | Abb Technology Ag | Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device |
JP2012256628A (ja) | 2011-06-07 | 2012-12-27 | Renesas Electronics Corp | Igbtおよびダイオード |
CN102290436B (zh) * | 2011-09-15 | 2016-08-03 | 江苏宏微科技有限公司 | 新型绝缘栅双极晶体管背面结构及其制备方法 |
CN103918078B (zh) * | 2011-11-09 | 2016-09-14 | 丰田自动车株式会社 | 半导体装置及其制造方法 |
WO2013141181A1 (ja) * | 2012-03-23 | 2013-09-26 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
EP2790209B1 (en) | 2012-03-30 | 2019-09-25 | Fuji Electric Co., Ltd. | Manufacturing method for semiconductor device |
US10181513B2 (en) * | 2012-04-24 | 2019-01-15 | Semiconductor Components Industries, Llc | Power device configured to reduce electromagnetic interference (EMI) noise |
US20130277793A1 (en) | 2012-04-24 | 2013-10-24 | Fairchild Korea Semiconductor, Ltd. | Power device and fabricating method thereof |
CN104620391B (zh) | 2012-10-23 | 2017-09-19 | 富士电机株式会社 | 半导体装置及其制造方法 |
CN103794645B (zh) * | 2012-10-30 | 2019-02-15 | 上海联星电子有限公司 | Igbt器件及其制作方法 |
CN103839994B (zh) * | 2012-11-23 | 2019-03-22 | 上海联星电子有限公司 | 一种igbt结构及其制作方法 |
CN103839990B (zh) * | 2012-11-23 | 2018-06-19 | 中国科学院微电子研究所 | 一种igbt的缓冲层结构及其制作方法 |
WO2014199465A1 (ja) * | 2013-06-12 | 2014-12-18 | 三菱電機株式会社 | 半導体装置 |
CN103489775A (zh) * | 2013-09-18 | 2014-01-01 | 中国东方电气集团有限公司 | 一种新型场截止型绝缘栅双极型晶体管的制造方法 |
JP6098540B2 (ja) * | 2014-02-10 | 2017-03-22 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6332446B2 (ja) * | 2014-06-12 | 2018-05-30 | 富士電機株式会社 | 半導体装置 |
CN106062961B (zh) | 2014-09-17 | 2020-02-11 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
JP2016063190A (ja) * | 2014-09-22 | 2016-04-25 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造方法、炭化珪素エピタキシャル基板および炭化珪素半導体装置 |
CN106062960B (zh) * | 2014-09-30 | 2019-12-10 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
CN105789046B (zh) * | 2014-12-25 | 2019-02-15 | 无锡华润上华科技有限公司 | 场截止绝缘栅双极晶体管的制备方法 |
WO2016198388A1 (en) | 2015-06-09 | 2016-12-15 | Abb Schweiz Ag | Method for manufacturing an edge termination for a silicon carbide power semiconductor device |
CN107004716B (zh) * | 2015-06-17 | 2020-12-18 | 富士电机株式会社 | 半导体装置 |
JP2015213193A (ja) * | 2015-07-21 | 2015-11-26 | ルネサスエレクトロニクス株式会社 | Igbt |
CN107154379B (zh) * | 2016-03-03 | 2020-01-24 | 上海新昇半导体科技有限公司 | 绝缘层上顶层硅衬底及其制造方法 |
EP3240040A1 (en) * | 2016-04-26 | 2017-11-01 | ABB Schweiz AG | Insulated gate bipolar transistor and method for manufacturing such an insulated gate bipolar transistor |
JP6412617B2 (ja) * | 2017-08-09 | 2018-10-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN111725312A (zh) * | 2020-06-05 | 2020-09-29 | 安徽瑞迪微电子有限公司 | 一种高性能半导体功率器件及其制造方法 |
US11527618B2 (en) | 2020-07-18 | 2022-12-13 | Semiconductor Components Industries, Llc | Up-diffusion suppression in a power MOSFET |
CN111933703B (zh) * | 2020-10-12 | 2021-01-29 | 中芯集成电路制造(绍兴)有限公司 | 一种绝缘栅双极型晶体管及其形成方法 |
CN116978937A (zh) * | 2021-02-07 | 2023-10-31 | 华为技术有限公司 | 半导体器件及相关模块、电路、制备方法 |
CN113437158B (zh) * | 2021-06-24 | 2023-12-12 | 安徽瑞迪微电子有限公司 | 一种快恢复二极管 |
CN113644123A (zh) * | 2021-06-28 | 2021-11-12 | 华为技术有限公司 | 半导体器件及相关芯片和制备方法 |
CN115000260B (zh) * | 2022-07-01 | 2024-01-19 | 淮安澳洋顺昌光电技术有限公司 | 外延结构层及其制备方法和led芯片 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0969501A1 (de) * | 1998-07-02 | 2000-01-05 | Semikron Elektronik GmbH | Verfahren zur Herstellung von Leistungshalbleiterbauelementen |
JP2004193212A (ja) * | 2002-12-09 | 2004-07-08 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2936993B2 (ja) * | 1994-01-12 | 1999-08-23 | サンケン電気株式会社 | 伝導度変調型電界効果トランジスタ |
KR20010034362A (ko) * | 1998-11-26 | 2001-04-25 | 다니구찌 이찌로오 | 반도체 장치 및 그 제조방법 |
US6482681B1 (en) * | 2000-05-05 | 2002-11-19 | International Rectifier Corporation | Hydrogen implant for buffer zone of punch-through non epi IGBT |
US7339109B2 (en) * | 2000-06-20 | 2008-03-04 | Emcore Corporation | Apparatus and method for optimizing the efficiency of germanium junctions in multi-junction solar cells |
CN1138307C (zh) * | 2000-12-21 | 2004-02-11 | 北京工业大学 | 低功耗半导体功率开关器件及其制造方法 |
JP3885598B2 (ja) * | 2001-02-09 | 2007-02-21 | 富士電機デバイステクノロジー株式会社 | 半導体装置の製造方法 |
JP3764343B2 (ja) * | 2001-02-28 | 2006-04-05 | 株式会社東芝 | 半導体装置の製造方法 |
EP1265294A3 (en) * | 2001-06-07 | 2004-04-07 | Matsushita Electric Industrial Co., Ltd. | Heterojunction bipolar transistor |
JP2004079878A (ja) * | 2002-08-21 | 2004-03-11 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3948377B2 (ja) * | 2002-09-12 | 2007-07-25 | 株式会社豊田中央研究所 | 圧接型半導体装置 |
DE10248205B4 (de) * | 2002-10-16 | 2007-03-08 | Infineon Technologies Ag | Ohmsche Kontaktanordnung und Herstellverfahren |
JP2005354031A (ja) * | 2004-05-13 | 2005-12-22 | Mitsubishi Electric Corp | 半導体装置 |
DE102005026408B3 (de) * | 2005-06-08 | 2007-02-01 | Infineon Technologies Ag | Verfahren zur Herstellung einer Stoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Stoppzone |
DE102005049506B4 (de) * | 2005-10-13 | 2011-06-09 | Infineon Technologies Austria Ag | Vertikales Halbleiterbauelement |
JP5104314B2 (ja) * | 2005-11-14 | 2012-12-19 | 富士電機株式会社 | 半導体装置およびその製造方法 |
DE102006025218B4 (de) * | 2006-05-29 | 2009-02-19 | Infineon Technologies Austria Ag | Leistungshalbleiterbauelement mit Ladungskompensationsstruktur und Verfahren zur Herstellung desselben |
JP4967472B2 (ja) * | 2006-06-22 | 2012-07-04 | 富士電機株式会社 | 半導体装置 |
JP4564510B2 (ja) * | 2007-04-05 | 2010-10-20 | 株式会社東芝 | 電力用半導体素子 |
JP5596278B2 (ja) * | 2007-07-10 | 2014-09-24 | 富士電機株式会社 | トレンチ型絶縁ゲートmos半導体装置 |
JP5150953B2 (ja) * | 2008-01-23 | 2013-02-27 | 三菱電機株式会社 | 半導体装置 |
-
2007
- 2007-10-03 EP EP07117817A patent/EP2045844A1/en not_active Withdrawn
-
2008
- 2008-10-01 WO PCT/EP2008/063137 patent/WO2009043870A1/en active Application Filing
- 2008-10-01 CN CN200880119702.4A patent/CN101884106B/zh active Active
- 2008-10-01 EP EP08804958A patent/EP2195847A1/en not_active Withdrawn
- 2008-10-01 JP JP2010527440A patent/JP2010541266A/ja active Pending
-
2010
- 2010-04-02 US US12/753,570 patent/US8450793B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0969501A1 (de) * | 1998-07-02 | 2000-01-05 | Semikron Elektronik GmbH | Verfahren zur Herstellung von Leistungshalbleiterbauelementen |
JP2004193212A (ja) * | 2002-12-09 | 2004-07-08 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20100244093A1 (en) | 2010-09-30 |
EP2045844A1 (en) | 2009-04-08 |
CN101884106A (zh) | 2010-11-10 |
EP2195847A1 (en) | 2010-06-16 |
US8450793B2 (en) | 2013-05-28 |
JP2010541266A (ja) | 2010-12-24 |
WO2009043870A1 (en) | 2009-04-09 |
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Effective date of registration: 20180427 Address after: Baden, Switzerland Patentee after: ABB Switzerland Co.,Ltd. Address before: Zurich Patentee before: ABB TECHNOLOGY Ltd. |
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Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
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