JP6688112B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP6688112B2 JP6688112B2 JP2016054965A JP2016054965A JP6688112B2 JP 6688112 B2 JP6688112 B2 JP 6688112B2 JP 2016054965 A JP2016054965 A JP 2016054965A JP 2016054965 A JP2016054965 A JP 2016054965A JP 6688112 B2 JP6688112 B2 JP 6688112B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cup
- processing
- facing member
- side wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 400
- 238000012545 processing Methods 0.000 title claims description 306
- 239000007788 liquid Substances 0.000 claims description 304
- 230000002093 peripheral effect Effects 0.000 claims description 136
- 238000004140 cleaning Methods 0.000 claims description 84
- 230000007246 mechanism Effects 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 28
- 238000001035 drying Methods 0.000 claims description 13
- 238000007599 discharging Methods 0.000 claims description 3
- 238000011282 treatment Methods 0.000 description 66
- 239000000126 substance Substances 0.000 description 51
- 239000007789 gas Substances 0.000 description 47
- 239000000243 solution Substances 0.000 description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 239000011261 inert gas Substances 0.000 description 11
- 230000000903 blocking effect Effects 0.000 description 6
- 238000000926 separation method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B15/00—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area
- B08B15/007—Fume suction nozzles arranged on a closed or semi-closed surface, e.g. on a circular, ring-shaped or rectangular surface adjacent the area where fumes are produced
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/0229—Suction chambers for aspirating the sprayed liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
Description
4 カップ部
5 トッププレート
9 基板
31 基板保持部
33 基板回転機構
41 第1カップ
42 第2カップ
43 カップ移動機構
54 対向部材開口
71 処理液ノズル
72 処理液供給部
73 ガス供給部
81 第1吸引部
82 第2吸引部
90 処理空間
91 (基板の)上面
411 第1カップ側壁部
412 第1カップ庇部
421 第2カップ側壁部
422 第2カップ庇部
511 対向部材天蓋部
512 対向部材側壁部
721 薬液供給部
722 洗浄液供給部
723 置換液供給部
724 温度制御部
D0 保持ギャップ距離
D1 第1カップギャップ距離
D2 第2カップギャップ距離
J1 中心軸
S11〜S21 ステップ
Claims (8)
- 基板を処理する基板処理装置であって、
基板よりも外径が大きい円板状であり、前記基板の下方に配置されて水平状態で前記基板を保持する基板保持部と、
上下方向を向く中心軸を中心として前記基板保持部を回転する基板回転機構と、
前記基板の上面に対向する対向部材と、
前記基板の前記上面に処理液を供給する処理液供給部と、
前記対向部材の下面と前記基板の前記上面との間の空間である処理空間に処理雰囲気用ガスを供給するガス供給部と、
前記基板保持部の周囲に配置されて前記基板からの前記処理液を受けるカップ部と、
前記カップ部内のガスを吸引して前記カップ部外へと排出するガス排出部と、
を備え、
前記処理液供給部が、
前記基板に第1処理液を供給する第1処理液供給部と、
前記基板に第2処理液を供給する第2処理液供給部と、
を備え、
前記対向部材が、
前記基板の前記上面に対向する対向部材天蓋部と、
前記対向部材天蓋部の外周部から下方に広がる対向部材側壁部と、
を備え、
前記対向部材側壁部の内周面は、前記基板保持部の外周面よりも径方向外方に配置され、かつ、前記基板保持部の前記外周面と径方向に対向し、
前記対向部材側壁部の外周面は、円筒状であり、
前記カップ部が、
円筒状の第1カップ側壁部と、前記第1カップ側壁部の上端部から径方向内方に広がる円環板状の第1カップ庇部とを有し、前記基板からの前記第1処理液を受ける第1カップと、
円筒状の第2カップ側壁部と、前記第2カップ側壁部の上端部から径方向内方に広がり、内周縁が前記対向部材側壁部の前記外周面と径方向に対向する円環板状の第2カップ庇部とを有し、前記第1カップの径方向外側に配置されて前記基板からの前記第2処理液を受ける第2カップと、
前記第1カップを前記基板保持部に対して上下方向に相対移動するカップ移動機構と、
を備え、
前記第1カップ庇部の内周縁が前記対向部材側壁部の前記外周面と径方向に対向する第1処理位置に前記第1カップが配置された状態で、回転中の前記基板の前記上面上に供給された前記第1処理液が前記第1カップにより受けられ、
前記第1カップ庇部の前記内周縁が前記対向部材側壁部の下端よりも下方に位置する第2処理位置に前記第1カップが配置された状態で、回転中の前記基板の前記上面上に供給された前記第2処理液が前記第2カップにより受けられ、
前記対向部材側壁部の前記外周面と前記第2カップ庇部の前記内周縁との間の径方向の距離である第2カップギャップ距離が、前記対向部材側壁部の前記内周面と前記基板保持部の前記外周面との間の径方向の距離である保持部ギャップ距離よりも大きいことを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置であって、
前記第2カップ庇部の下面が、前記第2カップ庇部の前記内周縁から径方向外方に向かうに従って下方に向かう傾斜面を含むことを特徴とする基板処理装置。 - 請求項1または2に記載の基板処理装置であって、
前記対向部材天蓋部の中央部に対向部材開口が設けられ、
前記処理液供給部からの前記第1処理液および前記第2処理液が、前記対向部材開口を介して前記基板の前記上面に供給され、
前記対向部材側壁部の前記外周面と前記第1カップ庇部の前記内周縁との間の径方向の距離である第1カップギャップ距離が、前記保持部ギャップ距離よりも大きいことを特徴とする基板処理装置。 - 請求項1ないし3のいずれかに記載の基板処理装置であって、
前記第1カップ庇部の下面が、前記第1カップ庇部の前記内周縁から径方向外方に向かうに従って下方に向かう傾斜面を含むことを特徴とする基板処理装置。 - 請求項1ないし4のいずれかに記載の基板処理装置であって、
前記基板保持部が回転する際に、前記対向部材も前記中心軸を中心として回転することを特徴とする基板処理装置。 - 請求項5に記載の基板処理装置であって、
前記対向部材が、前記基板保持部により保持され、前記基板回転機構により前記基板保持部と共に回転されることを特徴とする基板処理装置。 - 請求項1ないし6のいずれかに記載の基板処理装置であって、
前記対向部材側壁部の前記下端が、前記基板保持部の前記外周面の上端よりも下方に位置することを特徴とする基板処理装置。 - 請求項1ないし7のいずれかに記載の基板処理装置であって、
前記第1処理液または前記第2処理液が、常温よりも高い処理温度にて前記基板の前記上面上に供給されて前記基板に対する洗浄処理を行う洗浄液であり、
前記洗浄処理の終了後に、前記基板回転機構による前記基板の回転により前記基板上から液体を除去する乾燥処理が行われ、
前記洗浄処理と前記乾燥処理との間に、前記処理温度よりも低温の処理液が前記基板の前記上面上に供給されることにより前記基板が冷却されることを特徴とする基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016054965A JP6688112B2 (ja) | 2016-03-18 | 2016-03-18 | 基板処理装置 |
KR1020170021184A KR101943727B1 (ko) | 2016-03-18 | 2017-02-16 | 기판 처리 장치 |
TW106105289A TWI668753B (zh) | 2016-03-18 | 2017-02-17 | 基板處理裝置 |
CN201710112772.8A CN107204303B (zh) | 2016-03-18 | 2017-02-28 | 基板处理装置 |
US15/449,188 US10636682B2 (en) | 2016-03-18 | 2017-03-03 | Substrate processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016054965A JP6688112B2 (ja) | 2016-03-18 | 2016-03-18 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017168774A JP2017168774A (ja) | 2017-09-21 |
JP6688112B2 true JP6688112B2 (ja) | 2020-04-28 |
Family
ID=59847896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016054965A Active JP6688112B2 (ja) | 2016-03-18 | 2016-03-18 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10636682B2 (ja) |
JP (1) | JP6688112B2 (ja) |
KR (1) | KR101943727B1 (ja) |
CN (1) | CN107204303B (ja) |
TW (1) | TWI668753B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6948894B2 (ja) * | 2017-09-22 | 2021-10-13 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
CN110047796B (zh) * | 2018-01-16 | 2021-10-01 | 亿力鑫系统科技股份有限公司 | 承载盘 |
JP7179466B2 (ja) * | 2018-02-13 | 2022-11-29 | 株式会社Screenホールディングス | 基板処理装置 |
JP6942660B2 (ja) * | 2018-03-09 | 2021-09-29 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
JP7265874B2 (ja) * | 2019-01-28 | 2023-04-27 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7315389B2 (ja) * | 2019-06-28 | 2023-07-26 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP7377659B2 (ja) * | 2019-09-27 | 2023-11-10 | 株式会社Screenホールディングス | 基板処理装置 |
JP2023046818A (ja) * | 2021-09-24 | 2023-04-05 | 株式会社Screenホールディングス | 基板処理装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970063423A (ko) | 1996-02-01 | 1997-09-12 | 히가시 데쓰로 | 막형성방법 및 막형성장치 |
JP3555724B2 (ja) * | 1997-09-04 | 2004-08-18 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP3876059B2 (ja) * | 1997-09-29 | 2007-01-31 | 大日本スクリーン製造株式会社 | 基板処理装置および周辺部材の洗浄方法 |
TWI261875B (en) * | 2002-01-30 | 2006-09-11 | Tokyo Electron Ltd | Processing apparatus and substrate processing method |
JP2004241433A (ja) * | 2003-02-03 | 2004-08-26 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
US9242279B2 (en) * | 2011-05-24 | 2016-01-26 | Tokyo Electron Limited | Liquid processing apparatus and liquid processing method |
JP5726637B2 (ja) | 2011-05-24 | 2015-06-03 | 東京エレクトロン株式会社 | 液処理装置、液処理方法 |
JP5973299B2 (ja) | 2012-09-25 | 2016-08-23 | 株式会社Screenホールディングス | 基板処理装置 |
KR101512560B1 (ko) * | 2012-08-31 | 2015-04-15 | 가부시키가이샤 스크린 홀딩스 | 기판처리장치 |
JP5973300B2 (ja) | 2012-09-25 | 2016-08-23 | 株式会社Screenホールディングス | 基板処理装置 |
JP6163315B2 (ja) | 2013-02-14 | 2017-07-12 | 株式会社Screenホールディングス | 基板処理装置 |
JP2014157901A (ja) | 2013-02-15 | 2014-08-28 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
KR102091291B1 (ko) | 2013-02-14 | 2020-03-19 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
JP2014179489A (ja) | 2013-03-15 | 2014-09-25 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP6118595B2 (ja) | 2013-03-15 | 2017-04-19 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
US20140273498A1 (en) | 2013-03-15 | 2014-09-18 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
JP2014194965A (ja) | 2013-03-28 | 2014-10-09 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP6434293B2 (ja) | 2014-01-16 | 2018-12-05 | 株式会社Screenホールディングス | 基板処理装置 |
CN105900218B (zh) | 2014-01-16 | 2018-07-03 | 株式会社思可林集团 | 基板处理装置 |
WO2015107838A1 (ja) * | 2014-01-16 | 2015-07-23 | 株式会社Screenホールディングス | 基板処理装置 |
JP6330998B2 (ja) | 2014-02-17 | 2018-05-30 | 株式会社Screenホールディングス | 基板処理装置 |
JP6392046B2 (ja) | 2014-09-17 | 2018-09-19 | 株式会社Screenホールディングス | 基板処理装置 |
-
2016
- 2016-03-18 JP JP2016054965A patent/JP6688112B2/ja active Active
-
2017
- 2017-02-16 KR KR1020170021184A patent/KR101943727B1/ko active IP Right Grant
- 2017-02-17 TW TW106105289A patent/TWI668753B/zh active
- 2017-02-28 CN CN201710112772.8A patent/CN107204303B/zh active Active
- 2017-03-03 US US15/449,188 patent/US10636682B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI668753B (zh) | 2019-08-11 |
KR20170108814A (ko) | 2017-09-27 |
CN107204303B (zh) | 2020-08-18 |
TW201802914A (zh) | 2018-01-16 |
KR101943727B1 (ko) | 2019-01-29 |
JP2017168774A (ja) | 2017-09-21 |
CN107204303A (zh) | 2017-09-26 |
US20170271177A1 (en) | 2017-09-21 |
US10636682B2 (en) | 2020-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6688112B2 (ja) | 基板処理装置 | |
JP6467292B2 (ja) | 基板処理装置 | |
KR101796833B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR102566736B1 (ko) | 기판 처리 장치, 기판 처리 방법 및 기억 매체 | |
JP2017208435A (ja) | 基板処理装置および基板処理方法 | |
TW201442100A (zh) | 用來清洗基板處理裝置的清洗治具及清洗方法、與基板處理系統 | |
JP6593591B2 (ja) | 基板処理方法 | |
TWI814177B (zh) | 基板處理裝置及基板處理方法 | |
US9245737B2 (en) | Liquid treatment apparatus and liquid treatment method | |
CN107799441B (zh) | 基板处理方法 | |
JP6491900B2 (ja) | 基板処理装置および基板処理方法 | |
CN110076119B (zh) | 基板处理方法 | |
JP6416652B2 (ja) | 基板処理装置 | |
JP6442361B2 (ja) | 基板処理装置 | |
JP6405259B2 (ja) | 基板処理装置および基板処理方法 | |
JP6542594B2 (ja) | 基板処理装置および基板処理方法 | |
JP6563098B2 (ja) | 基板処理装置および基板処理方法 | |
JP6771080B2 (ja) | 基板処理装置および基板処理方法 | |
JP2018160508A (ja) | 基板処理装置 | |
JP2007005391A (ja) | 基板処理装置および基板処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181221 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190813 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190822 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191017 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200305 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200403 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6688112 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |