WO2015107838A1 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- WO2015107838A1 WO2015107838A1 PCT/JP2014/083836 JP2014083836W WO2015107838A1 WO 2015107838 A1 WO2015107838 A1 WO 2015107838A1 JP 2014083836 W JP2014083836 W JP 2014083836W WO 2015107838 A1 WO2015107838 A1 WO 2015107838A1
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- cup
- chamber
- exhaust port
- port
- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Definitions
- the present invention relates to a substrate processing apparatus for processing a substrate.
- a substrate processing apparatus that performs various processes by supplying a processing liquid to a rotating substrate is used.
- a cup portion that receives a processing liquid or the like scattered from the substrate due to centrifugal force may be provided around the substrate.
- Japanese Patent Laying-Open No. 2010-10554 (Reference 1) relates to a spin processing apparatus that sequentially supplies and processes a plurality of types of processing liquids to a substrate.
- a cup body is provided around a rotary table that holds a substrate.
- a processing liquid receiver is provided between the rotary table and the cup body, and the flow path connected to the lower side of the side surface of the processing liquid receiver is switched by raising and lowering the processing liquid receiver.
- the flow path is switched for each type of processing liquid received by the processing liquid receiver, and a plurality of types of processing liquids are collected separately.
- the atmosphere in the cup body is exhausted through a common exhaust pipe provided on the side surface of the cup body.
- a cup is provided around the spin chuck inside the processing chamber.
- An exhaust liquid groove for discharging the atmosphere in the cup together with a processing liquid such as pure water shaken off from the substrate is provided at the bottom of the cup.
- the exhaust gas and the exhaust liquid are guided from the exhaust liquid groove to the gas-liquid separator outside the processing chamber, and the separated exhaust gas is guided to the exhaust gas switching unit.
- the exhaust gas switching unit switches the flow destination of the exhaust gas between three individual exhaust pipes.
- an annular first drainage tank is provided outside the edge of the substrate, and an annular ring is formed around the first drainage tank.
- a second drainage tank is provided.
- a drainage port and an exhaust port are provided at the bottom of the first drainage tank, and the upper part of the exhaust port is covered with a skirt portion inclined in the circumferential direction.
- the bottom of the second drainage tank is also provided with a drainage port and an exhaust port, and the upper part of the exhaust port is covered with a skirt portion that is inclined in the circumferential direction.
- a plurality of discharge ports are provided on the side surface of the cup.
- the plurality of discharge ports are independently opened and closed by an opening / closing device.
- Each discharge port is connected to a gas-liquid separation device and an exhaust device that are not connected to other discharge ports, and the processing liquid discharged from the gas-liquid separation device is guided to a recovery device or a drain device.
- the exhaust pipe for discharging the atmosphere in the cup body cannot be switched.
- the exhaust pipe can be switched according to the type of the processing liquid, but the substrate processing apparatus may be increased in size because the exhaust switch is provided outside the processing chamber.
- multiple types of processing liquids and exhaust gases are guided to the outside of the processing chamber through a common pipe, they may be mixed with other processing liquids remaining in the pipes and the like, resulting in a decrease in the mixing rate and the recovery rate of the processing liquid. is there.
- a mechanism for adjusting the exhaust flow rate is provided on the exhaust pipe separately from the structure for switching the exhaust.
- the structure may be complicated and the apparatus may be enlarged.
- the present invention is directed to a substrate processing apparatus for processing a substrate, and aims to easily switch an exhaust mechanism. Another object is to easily change the exhaust flow rate.
- One substrate processing apparatus includes a substrate holding unit that holds a substrate in a horizontal state, a processing liquid supply unit that supplies a processing liquid onto the substrate, and a cup exhaust port.
- a cup portion for receiving a liquid a chamber for accommodating the substrate holding portion and the cup portion therein, a cup rotating mechanism for rotating the cup portion about a central axis facing in the vertical direction, and the cup rotating mechanism for the cup
- a controller that determines a position of the cup exhaust port in the circumferential direction about the central axis, and the chamber includes a first chamber exhaust port and a second chamber exhaust port that are arranged in the circumferential direction.
- the control unit controls the cup rotating mechanism, so that the cup exhaust port becomes the first chamber exhaust port or the second chamber.
- the first exhaust mechanism connected to the first chamber exhaust port causes the gas in the cup portion to be exhausted from the cup exhaust.
- the cup exhaust port is provided at the bottom of the cup portion, and the first chamber exhaust port and the second chamber exhaust port are provided at the bottom of the chamber.
- the cup portion has an annular shape centering on the central axis, and the cup portion has an annular bottom portion and a cylindrical shape extending upward from the inner peripheral portion of the bottom portion.
- the first chamber exhaust port and the second chamber exhaust port are provided on a side wall portion of the chamber facing the outer wall portion or the outer wall portion.
- a cup drainage port is provided at the bottom of the cup portion, and a first chamber drainage port and a second chamber drainage are arranged in the circumferential direction at the bottom of the chamber.
- the cup drain port overlaps the first chamber drain port and is connected to the first chamber drain port.
- the first chamber drainage line is arranged in the circumferential direction and connected to the first drainage portion.
- the processing liquid in the cup portion is discharged to the first drain portion, and the cup exhaust port is The first chamber exhaust port and the second chamber exhaust port are located at positions spaced apart from each other in the circumferential direction.
- the circumferential length of the first chamber drainage port is longer than the circumferential length of the cup drainage port, and the cup drainage port is the first chamber drainage port.
- the cup exhaust port is overlapped with the first chamber exhaust port, and the cup portion rotates while maintaining the overlap between the cup drain port and the first chamber drain port. The exhaust port moves to a position displaced from the first chamber exhaust port.
- the cup part has an annular shape centering on the central axis, and the cup part extends upward from the annular bottom part and the inner peripheral part of the bottom part.
- the processing liquid from the processing liquid supply part flows into a space between the outer wall part of the cup part and the partition wall, and the cup drainage port is located on the central axis more than the partition wall.
- the cup exhaust port is located on the radially inner side of the partition wall.
- it further includes an elevating mechanism that moves the substrate holding part relative to the cup part in the vertical direction, and the cup part is located between the partition wall and the outer wall part. And a cup-shaped partition wall extending upward from the cup, wherein the cup drainage port is located on the radially inner side with respect to the other partition wall, and the bottom of the cup portion includes the another partition wall.
- Another cup drainage port located on the radially outer side than the two partition walls is provided, and on the bottom of the chamber, the radially outer side of the first chamber drainage port and the second chamber drainage port And is provided with another chamber drainage port to which another drainage unit is connected, and the lifting mechanism causes the substrate to move to a first position relative to the cup unit and a second position above the first position.
- the processing liquid supplied from the processing liquid supply unit onto the substrate is transferred to the other portion of the cup unit.
- the processing liquid supplied from the processing liquid supply unit onto the substrate is transferred to the cup unit. It flows into the space between the outer wall portion and the other partition wall, and the other cup drainage port is overlapped with the other chamber drainage port to the other drainage portion outside the chamber. And the processing liquid is discharged.
- the substrate holding part includes a disc-like holding part main body centered on the central axis, and the holding part main body is located above the cup part. And an annular protrusion that protrudes downward from the lower surface of the holding body and surrounds the periphery of the central axis.
- a substrate holding unit that holds a substrate in a horizontal state
- a processing liquid supply unit that supplies a processing liquid onto the substrate
- a cup exhaust port are provided at the bottom.
- a cup portion for receiving the processing liquid, a chamber in which the substrate holding portion and the cup portion are housed and a chamber exhaust port is provided at the bottom, and a cup that rotates the cup portion around a central axis that faces in the vertical direction
- a rotation mechanism and a controller that rotates the cup portion by the cup rotation mechanism and determines a position of the cup exhaust port in a circumferential direction around the central axis, wherein the cup exhaust port is the chamber exhaust port.
- the exhaust mechanism connected to the chamber exhaust port causes the gas in the cup portion to flow into the cup exhaust port and the Exhausted through the chamber exhaust port, the cup rotating mechanism is controlled by the control unit, and the overlapping area of the cup exhaust port and the chamber exhaust port is changed, whereby the exhaust mechanism The exhaust flow rate from the chamber is changed. Thereby, the exhaust flow rate can be easily changed.
- the chamber exhaust port includes a large chamber exhaust port, a small chamber exhaust port arranged in the circumferential direction together with the large chamber exhaust port, and having a smaller area than the large chamber exhaust port.
- the overlap area of the cup exhaust port and the chamber exhaust port is changed by selectively overlapping the cup exhaust port with the large chamber exhaust port or the small chamber exhaust port.
- the cup exhaust port includes a large cup exhaust port, a small cup exhaust port arranged in the circumferential direction together with the large cup exhaust port, and having a smaller area than the large cup exhaust port. And changing the overlap area between the cup exhaust port and the chamber exhaust port is to selectively overlap the large cup exhaust port or the small cup exhaust port with the chamber exhaust port.
- the change of the overlapping area between the cup exhaust port and the chamber exhaust port rotates the cup portion while maintaining the overlap between the cup exhaust port and the chamber exhaust port. Is realized.
- the cup rotating mechanism is disposed in the chamber, and is disposed around the rotor portion outside the chamber, and an annular rotor portion attached to the cup portion, And a stator portion that generates a rotational force between the rotor portion and the rotor portion.
- the rotor part rotates in a floating state in the chamber by a magnetic force acting between the rotor part and the stator part.
- the chamber is a sealed space forming part that forms a sealed space in which the substrate holding part and the cup part are arranged.
- FIG. 1 is a cross-sectional view of a substrate processing apparatus according to a first embodiment. It is sectional drawing of a substrate processing apparatus. It is a bottom view of a cup part. It is a top view of a chamber lower surface part. It is a figure which shows the flow of a process of a board
- FIG. 1 is a cross-sectional view showing a substrate processing apparatus 1 according to a first embodiment of the present invention.
- the substrate processing apparatus 1 is a single-wafer type apparatus that supplies a processing liquid to a substantially disk-shaped semiconductor substrate 9 (hereinafter simply referred to as “substrate 9”) to process the substrates 9 one by one.
- substrate 9 a substantially disk-shaped semiconductor substrate 9
- pure water, an acidic chemical solution, an alkaline chemical solution, or the like is used as a processing solution, and a cleaning process for the substrate 9 and other various processes are performed.
- the provision of parallel oblique lines is omitted in the cross section of a part of the configuration of the substrate processing apparatus 1 (the same applies to other cross sectional views).
- the substrate processing apparatus 1 includes a chamber 21, a top plate 22, a chamber opening / closing mechanism 23, a substrate holding unit 31, a substrate rotating mechanism 32, a cup unit 4, a cup rotating mechanism 7, and a processing liquid supply unit 5.
- the housing 6 and the control unit 10 are provided. In FIG. 2 and subsequent figures, illustration of the control unit 10 is omitted.
- the housing 6 includes a housing bottom 61, a housing side wall 62, and a housing canopy 63.
- a housing bottom 61 that is the bottom of the housing 6 supports the chamber 21 and the like from below.
- the housing side wall 62 surrounds the chamber 21 and the like.
- the housing canopy 63 covers the top of the chamber 21 and the like.
- the housing side wall 62 is provided with a carry-in port 64 for carrying the substrate 9 into the housing 6.
- the carry-in port 64 is closed by a lid 65 that can move in the vertical direction.
- the chamber 21 includes a chamber main body 25 and a chamber lid portion 26.
- the chamber 21 has a substantially cylindrical shape centered on a central axis J1 that faces in the vertical direction.
- the chamber body 25 includes a chamber lower surface portion 251 and a chamber outer wall portion 252.
- the chamber lower surface portion 251 includes a lower surface central portion 254, a chamber inner side wall portion 255, and a chamber bottom portion 256.
- the lower surface central portion 254 has a substantially annular plate shape centered on the central axis J1.
- the chamber inner wall portion 255 has a substantially cylindrical shape centered on the central axis J1, and extends downward from the outer edge portion of the lower surface central portion 254.
- the chamber bottom portion 256 has a substantially annular plate shape centered on the central axis J1 and extends from the lower end of the chamber inner wall portion 255 in the radial direction centered on the central axis J1 (hereinafter simply referred to as “radial direction”). Spread outward.
- the chamber outer wall portion 252 is substantially cylindrical with the central axis J1 as the center.
- the chamber outer wall portion 252 protrudes upward from the outer edge portion of the chamber lower surface portion 251.
- the chamber outer wall 252 and the chamber inner wall 255 are the side walls of the chamber 21, and the chamber bottom 256 is the bottom of the chamber 21.
- the chamber lid portion 26 has a substantially annular plate shape perpendicular to the central axis J1.
- the lower end of the outer edge portion of the chamber lid portion 26 is in contact with the upper portion of the chamber outer wall portion 252 so that the upper opening of the chamber body 25 is closed.
- the chamber lid portion 26 closes the upper opening of the chamber body 25, whereby a chamber space that is a sealed space is formed in the chamber 21.
- the chamber 21 is a sealed space forming part that forms a chamber space.
- a substrate space 31, the top plate 22, and the cup portion 4 are accommodated in a chamber space that is inside the chamber 21.
- the chamber opening / closing mechanism 23 moves the chamber lid portion 26 that is a movable portion of the chamber 21 relative to the chamber main body 25 that is another part of the chamber 21 in the vertical direction.
- the chamber opening / closing mechanism 23 is a lid raising / lowering mechanism that raises and lowers the chamber lid 26.
- the top plate 22 moves in the vertical direction together with the chamber lid 26 while being suspended from the chamber lid 26.
- the chamber opening / closing mechanism 23 raises the chamber lid 26 and the top plate 22 from the position shown in FIG. 1 to the position shown in FIG. 2, thereby opening the chamber 21.
- processing positions are referred to as “processing positions”. Further, the positions of the chamber lid 26 and the top plate 22 shown in FIG. 2 are referred to as “retracted positions”. As will be described in detail later, in FIG. 2, the relative orientation of the cup portion 4 with respect to the housing 6 (that is, the relative orientation in the circumferential direction around the central axis J1) is different from FIG.
- the top plate 22 shown in FIG. 1 has a substantially annular plate shape centered on the central axis J1, and has an opening at the center.
- the top plate 22 includes a plate body portion 224, a plate side wall portion 225, and a held portion 221.
- the plate body 224 has a substantially annular plate shape centered on the central axis J1.
- a substantially circular opening is provided at the center of the plate body 224, and a held portion 221 is provided around the opening.
- the plate body 224 is disposed below the chamber lid 26 and above the substrate holder 31 and the substrate 9.
- the upper surface and the lower surface of the plate body 224 are inclined surfaces that are directed downward as they are separated from the central axis J1 in the radial direction.
- the lower surface of the plate main body 224 faces the upper surface 91 of the substrate 9 held by the substrate holding unit 31 in the vertical direction.
- the plate side wall 225 extends obliquely downward from the outer edge of the plate main body 224 toward the outer side in the radial direction.
- the plate side wall part 225 protrudes from the outer edge part of the plate main body part 224 to the lower surface side of the plate main body part 224, and goes downward as it is separated from the central axis J1 in the radial direction.
- the plate side wall 225 has a substantially cylindrical shape centered on the central axis J1.
- the plate side wall part 225 is disposed on the outer side in the radial direction of the substrate 9 and surrounds the periphery of the substrate 9.
- the lower end of the plate side wall part 225 is positioned at approximately the same position as a base part 311 (described later) of the substrate holding part 31 in the vertical direction.
- the diameter of the plate body 224 is larger than the diameter of the substrate 9.
- the diameter of the lower end of the plate side wall part 225 is larger than the diameter of the base part 311 of the substrate holding part 31.
- the lower end of the plate side wall part 225 is spaced from the outer edge of the base part 311 to the outside in the radial direction over the entire circumference.
- the top plate 22 extends to the outside in the radial direction over the entire circumference from the outer peripheral edge of the substrate 9 and the outer peripheral edge of the base portion 311 of the substrate holding portion 31.
- the chamber lid part 26 has a substantially annular plate holding part 261 at the center.
- the plate holding part 261 includes a substantially cylindrical tube part 262 centered on the central axis J1 and a substantially disk-shaped flange part 263 centered on the central axis J1.
- the flange part 263 extends radially inward from the lower end of the cylindrical part 262.
- the held portion 221 is a substantially annular portion that protrudes upward from the central portion of the plate body portion 224.
- the held portion 221 includes a substantially cylindrical tube portion 222 centered on the central axis J1 and a substantially disk-shaped flange portion 223 centered on the central axis J1.
- the cylinder part 222 extends upward from the upper surface of the plate body part 224.
- the flange portion 223 extends radially outward from the upper end of the cylindrical portion 222.
- the cylindrical portion 222 is located on the radially inner side of the cylindrical portion 262 of the plate holding portion 261.
- the flange portion 223 is located above the flange portion 263 of the plate holding portion 261 and faces the flange portion 263 in the vertical direction.
- the top plate 22 is attached to the chamber lid portion 26 so as to be suspended from the chamber lid portion 26.
- the substrate holder 31 holds the substrate 9 in a horizontal state. That is, the substrate 9 is held by the substrate holding part 31 with the upper surface 91 on which the fine pattern is formed facing upwards perpendicular to the central axis J1.
- the substrate holding part 31 includes a base part 311 and a plurality of chucks 312.
- the base portion 31 is a substantially disc-shaped holding portion main body centered on the central axis J1.
- the base portion 311 is perpendicular to the central axis J1 and has an opening at the center.
- the base portion 31 faces the cup portion 4 in the vertical direction above the cup portion 4.
- a plurality of (for example, three) chucks 312 are fixed to the upper surface of the base portion 311.
- the plurality of chucks 312 are arranged at approximately equal angular intervals in the circumferential direction (hereinafter simply referred to as “circumferential direction”) centered on the central axis J1.
- the plurality of chucks 312 hold the outer edge portion of the substrate 9 above the base portion 311.
- the substrate rotation mechanism 32 is disposed below the lower surface central portion 254 of the chamber lower surface portion 251.
- the substrate rotation mechanism 32 is, for example, a shaft rotation type electric motor.
- the rotation shaft 321 of the substrate rotation mechanism 32 extends through the lower surface central portion 254 of the chamber lower surface portion 251 to the inside of the chamber 21.
- the rotation shaft 321 has a substantially cylindrical shape centered on the central axis J1.
- a base portion 311 of the substrate holding portion 31 is fixed to the distal end portion of the rotating shaft 321.
- a seal that prevents the passage of gas or liquid is provided between the rotating shaft 321 and the lower surface central portion 254 of the chamber lower surface portion 251.
- a plurality of first engaging portions 314 are provided on the upper surface of the base portion 311 of the substrate holding portion 31 in the circumferential direction. Each first engagement portion 314 has a substantially columnar shape protruding upward.
- a plurality of second engaging portions 226 are provided on the lower surface of the top plate 22 in the circumferential direction. A concave portion that is recessed upward is provided at the lower portion of each second engagement portion 226.
- the first engagement portion 314 is fitted into the recess at the lower portion of the second engagement portion 226.
- the top plate 22 engages with the base portion 311 of the substrate holding portion 31 in the circumferential direction.
- the first engagement portion 314 and the second engagement portion 226 regulate the relative position of the top plate 22 with respect to the substrate holding portion 31 in the rotation direction.
- the top plate 22 In the state where the top plate 22 is located at the processing position, the top plate 22 is supported by the base portion 311 of the substrate holding portion 31 via the first engaging portion 314 and the second engaging portion 226.
- the flange portion 223 of the held portion 221 of the top plate 22 is spaced upward from the flange portion 263 of the plate holding portion 261 of the chamber lid portion 26. That is, the held portion 221 and the plate holding portion 261 are not in contact, and the holding of the top plate 22 by the plate holding portion 261 is released. For this reason, the top plate 22 is rotated by the substrate rotating mechanism 32 together with the substrate holding unit 31 and the substrate 9 independently of the chamber lid 26.
- the first engagement portion 314 and the second engagement portion 226 are position fixing members that fix the relative position of the top plate 22 to the substrate holding portion 31 in the circumferential direction when the top plate 22 rotates.
- the treatment liquid supply unit 5 includes an upper nozzle 51 and a lower nozzle 52.
- the upper nozzle 51 is fixed to the chamber lid portion 26 and is disposed inside the held portion 221 of the top plate 22.
- the upper nozzle 51 is not in contact with the top plate 22 and does not rotate when the top plate 22 rotates.
- the upper nozzle 51 is connected to a processing liquid supply source (not shown) provided outside the housing 6.
- the lower end of the upper nozzle 51 is located above the substrate 9 and faces the center of the upper surface 91 of the substrate 9.
- the processing liquid supplied from the processing liquid supply source to the upper nozzle 51 is supplied from the lower end of the upper nozzle 51 toward the center on the upper surface 91 of the substrate 9.
- the lower nozzle 52 is disposed inside the rotation shaft 321 of the substrate rotation mechanism 32 and protrudes upward from the base portion 311 through an opening located at the center of the base portion 311 of the substrate holding portion 31.
- the lower nozzle 52 is not in contact with the rotating shaft 321 and does not rotate when the rotating shaft 321 rotates.
- a seal is provided between the lower nozzle 52 and the base 311 to prevent the passage of gas or liquid.
- the lower nozzle 52 is connected to a processing liquid supply source (not shown) provided outside the housing 6.
- the upper end of the lower nozzle 52 is located below the substrate 9 and faces the center of the lower surface 92 of the substrate 9.
- the processing liquid supplied from the processing liquid supply source to the lower nozzle 52 is supplied from the upper end of the lower nozzle 52 toward the center of the lower surface 92 of the substrate 9.
- the cup part 4 is an annular member centered on the central axis J1.
- the cup unit 4 is disposed below the substrate holding unit 31 and receives the processing liquid from the substrate 9.
- the cup portion 4 is located on the radially outer side of the chamber inner wall portion 255 of the chamber lower surface portion 251 and surrounds the chamber inner wall portion 255 and the substrate rotation mechanism 32.
- the cup rotation mechanism 7 is a so-called hollow motor, and rotates the cup portion 4 around the central axis J1.
- the cup rotating mechanism 7 includes an annular stator portion 71 centered on the central axis J1 and an annular rotor portion 72.
- the rotor part 72 includes a substantially annular permanent magnet. The surface of the permanent magnet is molded with PTFE resin.
- the rotor portion 72 is attached to the cup portion 4 in the housing 6. Specifically, the rotor portion 72 is attached to the vicinity of the outer edge portion of the cup bottom portion 42 in the chamber 21.
- the stator portion 71 is disposed outside the chamber 21 and around the rotor portion 72, that is, radially outside. In the example shown in FIG. 1, the stator portion 71 is fixed on the housing bottom portion 61 around the chamber 21. Stator portion 71 includes a plurality of coils arranged in a circumferential direction around central axis J1.
- the rotor part 72 rotates in a horizontal state around the central axis J1. Due to the magnetic force acting between the stator portion 71 and the rotor portion 72, the rotor portion 72 floats in the chamber 21 in the housing 6 without directly or indirectly contacting the chamber 21, and the central axis J1 is It rotates in a floating state with the cup part 4 as the center.
- the cup unit 4 is rotated by the cup rotating mechanism 7 under the control of the control unit 10, and the circumferential positions of the cup drain port 451 and the cup exhaust port 461 described later are determined.
- the cup part 4 includes a cup outer wall part 41, a cup bottom part 42, a cup inner wall part 43, and a partition wall 44.
- the cup bottom 42 which is the bottom of the cup portion 4 has a substantially annular shape centering on the central axis J1.
- the cup outer wall 41 that is the outer wall of the cup 4 has a substantially cylindrical shape with the central axis J1 as the center.
- the cup outer wall 41 extends upward from the outer peripheral portion of the cup bottom 42 substantially parallel to the central axis J1.
- a cup inner wall portion 43 that is an inner wall portion of the cup portion 4 has a substantially cylindrical shape centered on the central axis J1.
- the cup inner wall 43 is positioned radially inward of the cup outer wall 41 and extends upward from the inner periphery of the cup bottom 42 substantially parallel to the central axis J1.
- the partition wall 44 has a substantially cylindrical shape centered on the central axis J1.
- the partition wall 44 is located between the cup inner wall portion 43 and the cup outer wall portion 41 in the radial direction, and extends upward from the cup bottom portion 42 substantially parallel to the central axis J1.
- a space between the cup outer wall portion 41 and the partition wall 44 of the cup portion 4 is referred to as an “outer cup space 45”.
- a space between the partition wall 44 of the cup portion 4 and the cup inner wall portion 43 is referred to as an “inner cup space 46”.
- the outer cup space 45 is a substantially cylindrical space surrounded by the cup outer wall 41, the cup bottom 42, and the partition wall 44.
- the inner cup space 46 is a substantially cylindrical space surrounded by the partition wall 44, the cup bottom portion 42, and the cup inner wall portion 43.
- the inner cup space 46 is located below the base portion 311 of the substrate holding portion 31.
- a cup exhaust port 461 is provided in a portion of the cup bottom 42 that forms the bottom of the inner cup space 46.
- the cup exhaust port 461 is located radially inward from the lower end of the partition wall 44.
- the cup exhaust port 461 overlaps with the chamber exhaust port 281 provided in the chamber bottom portion 256 of the chamber lower surface portion 251 in the vertical direction.
- the lower end of the cup exhaust port 461 is close to the upper end of the chamber exhaust port 281 and faces the vertical direction.
- the gas in the chamber 21 is discharged out of the chamber 21 and out of the housing 6 through the inner cup space 46, the cup exhaust port 461 and the chamber exhaust port 281.
- the size and shape of the lower end of the cup exhaust port 461 are approximately the same as the size and shape of the upper end of the chamber exhaust port 281. In other words, the area of the lower end of the cup exhaust port 461 is approximately equal to the area of the upper end of the chamber exhaust port 281. The area of the lower end of the cup exhaust port 461 may be smaller than the area of the upper end of the chamber exhaust port 281, for example.
- a substantially cylindrical bottom protrusion 462 that protrudes downward is provided in a portion of the cup bottom 42 that is radially inward of the lower end of the partition wall 44, and the cup exhaust port 461 is a bottom protrusion. 462 is provided. Further, a substantially cylindrical bottom protruding portion 282 protruding upward is provided on the chamber bottom portion 256 of the chamber lower surface portion 251, and the chamber exhaust port 281 is provided in the bottom protruding portion 282. The chamber exhaust port 281 passes through the housing bottom 61 and protrudes out of the chamber space.
- the outer cup space 45 is located below the base portion 311 of the substrate holding portion 31 on the radially outer side than the inner cup space 46.
- the cup outer wall portion 41 of the cup portion 4 is located on the radially outer side over the entire circumference from the substrate 9, the substrate holding portion 31, and the top plate 22.
- the upper end of the cup outer wall portion 41 is located at approximately the same position as the base portion 311 of the substrate holding portion 31 and the lower end of the plate side wall portion 225 of the top plate 22 in the vertical direction.
- the upper end of the cup outer wall portion 41 is located above the lower end of the plate side wall portion 225. That is, the upper end portion of the cup outer wall portion 41 and the lower end portion of the plate side wall portion 225 overlap in the radial direction.
- the upper end diameter of the cup part 4 is larger than the lower end diameter of the plate side wall part 225.
- the upper end of the cup part 4 is separated from the lower end of the plate side wall part 225 to the outer side in the radial direction over the entire
- the processing liquid supplied from the processing liquid supply unit 5 and scattered from the rotating substrate 9 is received by the plate side wall 225 located around the substrate 9 and moves downward on the inner peripheral surface of the plate side wall 225. Then, the processing liquid dropped from the plate side wall portion 225 flows into the outer cup space 45 of the cup portion 4. That is, the processing liquid from the processing liquid supply unit 5 flows into the outer cup space 45 of the cup unit 4.
- a cup drainage port 451 is provided in a portion of the cup bottom 42 that constitutes the bottom of the outer cup space 45.
- the cup drain port 451 is located on the radially outer side than the lower end of the partition wall 44.
- the cup drain port 451 overlaps with the chamber drain port 271 provided in the chamber bottom portion 256 of the chamber lower surface portion 251 in the vertical direction.
- the lower end of the cup draining port 451 is close to the upper end of the chamber draining port 271 and faces the vertical direction. Then, the liquid flowing into the outer cup space 45 is discharged out of the chamber 21 and out of the housing 6 through the cup drain port 451 and the chamber drain port 271.
- the size and shape of the lower end of the cup drain port 451 are approximately the same as the size and shape of the upper end of the chamber drain port 271. In other words, the area of the lower end of the cup drain port 451 is approximately equal to the area of the upper end of the chamber drain port 271. The area of the lower end of the cup drain port 451 may be smaller than the area of the upper end of the chamber drain port 271, for example.
- a substantially cylindrical bottom protrusion 452 that protrudes downward is provided in a portion of the cup bottom 42 that is radially outward from the lower end of the partition wall 44, and the cup drainage port 451 protrudes from the bottom.
- a substantially cylindrical bottom protruding portion 272 protruding upward is provided on the chamber bottom portion 256 of the chamber lower surface portion 251, and the chamber drainage port 271 is provided in the bottom protruding portion 272.
- the chamber drainage port 271 passes through the housing bottom 61 and protrudes out of the chamber space.
- FIG. 3 is a bottom view showing the cup portion 4.
- one cup drain port 451 and one cup exhaust port 461 are provided on the cup bottom 42 one by one.
- a parallel oblique line is given to the cup drain port 451 and the cup exhaust port 461 (the same applies to FIGS. 12, 15, and 19).
- the cup drain port 451 is located on the opposite side of the cup exhaust port 461 across the central axis J1.
- the cup drain port 451 and the cup exhaust port 461 are arranged at intervals of about 180 degrees in the circumferential direction.
- the cup drain port 451 is located radially outside the cup exhaust port 461.
- the cup bottom 42 includes a plurality of outer protrusions 453 protruding downward and a plurality of inner protrusions 463 protruding downward.
- the plurality of outer convex portions 453 are arranged in the circumferential direction with the bottom protrusion 452 in which the cup drain port 451 is provided (that is, arranged on the circumference having the same radial distance from the central axis J1).
- the plurality of inner protrusions 463 are arranged in the circumferential direction with a bottom protrusion 462 in which the cup exhaust port 461 is provided. In the example shown in FIG. 3, 15 outer convex portions 453 and 15 inner convex portions 463 are provided on the cup portion 4.
- Each outer convex portion 453 has a substantially cylindrical shape, and the diameter of each outer convex portion 453 is approximately equal to the outer diameter of the bottom protruding portion 452 in which the cup drain port 451 is provided.
- Each inner convex portion 463 has a substantially cylindrical shape, and the diameter of each inner convex portion 463 is approximately equal to the outer diameter of the bottom protruding portion 462 in which the cup exhaust port 461 is provided.
- the respective protrusions that is, the height in the vertical direction) of the outer protrusions 453, the inner protrusions 463, the bottom protrusions 452, and the bottom protrusions 462 from the cup bottom 42 are approximately equal to each other.
- FIG. 4 is a plan view showing the chamber lower surface portion 251.
- the cup outer wall 41, the partition wall 44, and the cup inner wall 43 of the cup 4 are shown together with broken lines.
- a plurality of chamber drain ports 271 and a plurality of chamber exhaust ports 281 and 284 are provided on the chamber bottom portion 256 of the chamber lower surface portion 251.
- the chamber drain port 271 and the chamber exhaust ports 281 and 284 are hatched in parallel (the same applies to FIGS. 13, 16, and 20).
- the plurality of chamber drain ports 271 are respectively provided in the plurality of bottom protrusions 272 provided on the chamber bottom 256 of the chamber lower surface 251.
- the plurality of chamber drain ports 271 are arranged in the circumferential direction.
- the plurality of chamber drain ports 271 have the same size and structure, and the plurality of bottom protrusions 272 also have the same size and structure.
- the plurality of chamber drainage ports 271 have a plurality of chamber drainage port groups.
- nine chamber drain ports 271 are provided in the chamber bottom portion 256 of the chamber lower surface portion 251, and the nine chamber drain ports 271 include a first chamber drain port group 276 a and a second chamber.
- a drain port group 276b and a third chamber drain port group 276c are provided.
- the first chamber drain port group 276a, the second chamber drain port group 276b, and the third chamber drain port group 276c are collectively referred to as “chamber drain port groups 276a to 276c”.
- the chamber drain port groups 276a to 276c are surrounded by two-dot chain lines (the same applies to FIG. 26).
- Each chamber drain port group 276a to 276c has three chamber drain ports 271.
- three chamber drain ports 271 are arranged at equal angular intervals in the circumferential direction.
- the three chamber drain ports 271 of the first chamber drain port group 276a are connected to the first drain unit 96a outside the substrate processing apparatus 1.
- the three chamber drain ports 271 of the second chamber drain port group 276b are connected to the second drain section 96b outside the substrate processing apparatus 1.
- the three chamber drain ports 271 of the third chamber drain port group 276c are connected to the third drain portion 96c outside the substrate processing apparatus 1.
- the first drainage part 96a, the second drainage part 96b, and the third drainage part 96c are provided independently of each other.
- the chamber bottom portion 256 of the chamber lower surface portion 251 includes one outer convex portion 273 that protrudes upward.
- the outer convex portion 273 is arranged in the circumferential direction with a plurality of bottom protrusions 272 in which a plurality of chamber drain ports 271 are respectively provided.
- the outer convex portion 273 is substantially cylindrical, and the diameter of the outer convex portion 273 is approximately equal to the outer diameter of each bottom protruding portion 272. No flow path is formed inside the outer convex portion 273.
- the plurality of chamber exhaust ports 281 are respectively provided in the plurality of bottom protrusions 282 provided on the chamber bottom 256 of the chamber lower surface 251.
- the plurality of chamber exhaust ports 284 are provided in the plurality of bottom protrusions 285 that are provided on the chamber bottom 256 of the chamber lower surface 251 and protrude upward.
- Each chamber exhaust port 284 is adjacent to the chamber exhaust port 281 in the circumferential direction.
- the chamber exhaust ports 281 and 284 are referred to as a “large chamber exhaust port 281” and a “small chamber exhaust port 284” in order to facilitate the distinction between the chamber exhaust ports 281 and 284, respectively.
- the large chamber exhaust port 281 and the small chamber exhaust port 284 are collectively referred to simply as a “chamber exhaust port”.
- the diameter of the small chamber exhaust port 284 is smaller than the diameter of the large chamber exhaust port 281.
- the area of the upper end of the small chamber exhaust port 284 is smaller than the area of the upper end of the large chamber exhaust port 281.
- the outer diameter of the bottom protrusion 285 in which the small chamber exhaust port 284 is provided is smaller than the outer diameter of the bottom protrusion 282 in which the large chamber exhaust port 281 is provided.
- the plurality of small chamber exhaust ports 284 are arranged in the circumferential direction together with the plurality of large chamber exhaust ports 281.
- the plurality of large chamber exhaust ports 281 have the same size and structure, and the plurality of bottom protrusions 282 have the same size and structure.
- the plurality of small chamber exhaust ports 284 have a similar size and structure, and the plurality of bottom protrusions 285 have a similar size and structure.
- the chamber bottom portion 256 of the chamber lower surface portion 251 includes a plurality of inner convex portions 283 that protrude upward.
- the plurality of inner protrusions 283 are arranged in the circumferential direction with the plurality of bottom protrusions 282 and the plurality of bottom protrusions 285.
- Each inner convex portion 283 is substantially cylindrical, and the diameter of the inner convex portion 283 is approximately equal to the outer diameter of the bottom protruding portion 282 in which the large chamber exhaust port 281 is provided. No flow path is formed inside each inner convex portion 283.
- three large chamber exhaust ports 281, three small chamber exhaust ports 284, and four inner convex portions 283 are provided on the chamber bottom portion 256 of the chamber lower surface portion 251.
- the first chamber exhaust port group 276a located on the opposite side of the first chamber drain port group 276a with respect to the central axis J1 includes one large chamber exhaust port 281, one small chamber exhaust port 284, 1 And two inner convex portions 283.
- the second chamber exhaust port group 286b located on the opposite side of the second chamber drain port group 276b and the central axis J1 also has one large chamber exhaust port 281, 1 One small chamber exhaust port 284 and one inner convex portion 283 are provided.
- the third chamber exhaust port group 286c located on the opposite side of the third chamber drain port group 276c and the central axis J1 also has one large chamber exhaust port 281, 1 One small chamber exhaust port 284 and one inner convex portion 283 are provided.
- each of the chamber exhaust port groups 286a to 286c is surrounded by a two-dot chain line.
- the large chamber exhaust port 281, the small chamber exhaust port 284 and the inner convex portion 283 are arranged at equal angular intervals in the circumferential direction.
- one inner convex portion 283 is not included in the chamber exhaust port groups 286a to 286c, and is located on the opposite side across the outer convex portion 273 and the central axis J1.
- the large chamber exhaust port 281 and the small chamber exhaust port 284 of the first chamber exhaust port group 286a are connected to the first exhaust mechanism 95a.
- the large chamber exhaust port 281 and the small chamber exhaust port 284 of the second chamber exhaust port group 286b are connected to the second exhaust mechanism 95b.
- the large chamber exhaust port 281 and the small chamber exhaust port 284 of the third chamber exhaust port group 286c are connected to the third exhaust mechanism 95c.
- the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c are disposed outside the substrate processing apparatus 1. While the substrate processing apparatus 1 is in use, suction by the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c is continuously performed.
- the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c are collectively referred to as “exhaust mechanisms 95a to 95c”.
- the cup exhaust port 461 is selected as one of a plurality of large chamber exhaust ports 281 and a plurality of small chamber exhaust ports 284 by controlling the cup rotating mechanism 7 by the control unit 10. Superimposed. Further, the cup drain port 451 is selectively overlapped with any one of the plurality of chamber drain ports 271.
- FIG. 5 is a diagram showing an example of the processing flow of the substrate 9 in the substrate processing apparatus 1.
- the cup rotating mechanism 7 is controlled by the control unit 10, whereby the cup unit 4 rotates and stops in the direction shown in FIG. 2 (step S11). ).
- the direction of the cup portion 4 shown in FIG. 2 that is, the state of the cup portion 4) is referred to as a “standby state”.
- the cup exhaust port 461 includes one inner convex portion 283 that is not included in the chamber exhaust port groups 286a to 286c (see FIG. 4) among the four inner convex portions 283 of the chamber bottom portion 256. Overlapping in the vertical direction. That is, FIG. 2 shows a state in which the cup exhaust port 461 is located at a position spaced apart from all the large chamber exhaust ports 281 and all the small chamber exhaust ports 284 (see FIG. 4) in the circumferential direction. The lower end of the cup exhaust port 461 and the upper end surface of the inner convex portion 283 of the chamber bottom portion 256 are close to each other and face each other in the vertical direction. As a result, the cup exhaust port 461 is substantially closed.
- cup drain port 451 overlaps with the outer convex portion 273 of the chamber bottom portion 256 in the vertical direction.
- the lower end of the cup drain port 451 and the upper end surface of the outer convex portion 273 are opposed to each other in the vertical direction. As a result, the cup drain port 451 is substantially closed.
- the large chamber exhaust port 281 of the first chamber exhaust port group 286a overlaps with the inner convex portion 463 of the cup bottom portion 42 in the vertical direction.
- the upper end of the large chamber exhaust port 281 and the lower end surface of the inner convex portion 463 face each other in the vertical direction. As a result, the large chamber exhaust port 281 is substantially closed.
- the small chamber exhaust port 284 of the first chamber exhaust port group 286a shown in FIG. 4 also overlaps the inner convex portion 463 of the cup bottom portion 42 in the vertical direction.
- the upper end of the small chamber exhaust port 284 and the lower end surface of the inner convex portion 463 face each other in the vertical direction. Thereby, the small chamber exhaust port 284 is substantially closed.
- the large chamber exhaust port 281 and the small chamber exhaust port 284 of the second chamber exhaust port group 286b and the third chamber exhaust port group 286c respectively face the inner convex portion 463 close to each other in the vertical direction, It is substantially occluded.
- each chamber drain port 271 overlaps with the outer convex portion 453 of the cup bottom 42 in the vertical direction.
- the upper end of each chamber drainage port 271 and the lower end surface of the outer convex portion 453 are opposed to each other in the vertical direction. Thereby, each chamber drainage port 271 is substantially closed.
- the chamber lid unit 26 and the top plate 22 move to the retracted position shown in FIG. 2, and the carry-in port 64 is opened. Then, the substrate 9 is carried into the chamber 21 in the housing 6 from the carry-in port 64 and is held by the substrate holding unit 31 (step S12).
- the lower end of the cup exhaust port 461 is close to the chamber bottom portion 256, and the upper end of each large chamber exhaust port 281 and each small chamber exhaust port 284.
- the upper end is close to the cup bottom 42.
- the lower end of the cup exhaust port 461 is close to the chamber bottom portion 256, the upper end of each large chamber exhaust port 281 and the upper end of each small chamber exhaust port 284 are not necessarily close to the cup bottom portion 42. do not have to. Further, if the upper end of each large chamber exhaust port 281 and the upper end of each small chamber exhaust port 284 are close to the cup bottom 42, the lower end of the cup exhaust port 461 is not necessarily close to the chamber bottom 256. In the substrate processing apparatus 1, the lower end of the cup exhaust port 461 is close to the chamber bottom portion 256, or the upper end of each large chamber exhaust port 281 and the upper end of each small chamber exhaust port 284 are close to the cup bottom portion 42. The suction of the gas in the cup portion 4 through the cup exhaust port 461 is stopped. As a result, similarly to the above, the gas outside the housing 6 can be prevented from flowing into the housing 6 and the chamber 21 from the opened inlet 64.
- the lid 65 moves upward, and the carry-in port 64 is closed as shown in FIG. Further, the chamber lid portion 26 and the top plate 22 are lowered and positioned at the processing position shown in FIG. Thereby, a chamber space is formed in the chamber 21. Further, the holding of the top plate 22 by the plate holding portion 261 is released. An inert gas such as nitrogen is supplied to the chamber space from the upper nozzle 51 or the like.
- the cup unit 4 rotates from the standby state and stops in the direction shown in FIG. 1 (step S13).
- the direction of the cup part 4 shown in FIG. 1 that is, the state of the cup part 4) is referred to as a “first processing state”.
- the cup exhaust port 461 overlaps the large chamber exhaust port 281 of the first chamber exhaust port group 286a in the vertical direction.
- the lower end of the cup exhaust port 461 and the upper end of the large chamber exhaust port 281 are close to each other and face each other in the vertical direction.
- the cup exhaust port 461 and the large chamber exhaust port 281 of the first chamber exhaust port group 286a are substantially connected.
- the gas in the cup portion 4 is discharged out of the chamber 21 and out of the housing 6 through the cup exhaust port 461 and the large chamber exhaust port 281 by the first exhaust mechanism 95a (see FIG. 4). Further, the gas outside the cup portion 4 in the chamber 21 is also discharged out of the chamber 21 and out of the housing 6 through the inner cup space 46, the cup exhaust port 461 and the large chamber exhaust port 281.
- the cup drain port 451 overlaps with the chamber drain port 271 at the center of the first chamber drain port group 276a in the vertical direction.
- the lower end of the cup drain port 451 and the upper end of the chamber drain port 271 are close to each other and face each other in the vertical direction.
- the cup drain port 451 and the chamber drain port 271 of the first chamber drain port group 276a are substantially connected.
- Each chamber drain port 271 (see FIG. 4) other than the chamber drain port 271 overlaps the outer convex portion 453 of the cup bottom 42 in the vertical direction and is substantially closed.
- step S14 When the cup unit 4 is in the first processing state, the substrate rotation mechanism 32 is driven, and rotation of the substrate 9, the substrate holding unit 31, and the top plate 22 is started (step S14).
- the rotation speeds of the substrate 9, the substrate holding part 31, and the top plate 22 are equal to each other, and the rotation directions are the same.
- Step S14 may be performed in parallel with step S13, or may be performed between step S12 and step S13.
- step S15 supply of the first processing liquid from the upper nozzle 51 of the processing liquid supply unit 5 to the upper surface 91 of the rotating substrate 9 is started (step S15).
- the first processing liquid continuously supplied to the center portion of the upper surface 91 of the substrate 9 moves outward in the radial direction by centrifugal force.
- the first processing liquid spreads on the upper surface 91 of the substrate 9 and covers the entire upper surface 91. Thereby, the process with respect to the upper surface 91 of the board
- the processing of the substrate 9 by the first processing liquid is performed between the upper surface 91 of the substrate 9 and the lower surface of the top plate 22. It is performed in a relatively small space. Thereby, the diffusion of the processing liquid atmosphere in the space above the substrate 9 can be suppressed, and the temperature drop of the substrate 9 during processing can also be suppressed.
- the first processing liquid that has reached the outer peripheral edge of the substrate 9 scatters radially outward from the outer peripheral edge and flows into the outer cup space 45 of the cup portion 4.
- the first processing liquid that has flowed into the outer cup space 45 passes through the cup drain port 451 and the chamber drain port 271 to the first drain part 96a (see FIG. 4) outside the chamber 21 and outside the housing 6. Discharged.
- emitted to the 1st drainage part 96a is discarded.
- emitted to the 1st drainage part 96a is collect
- the gas in the chamber 21 is passed through the inner cup space 46, the cup exhaust port 461, and the large chamber exhaust port 281 by the first exhaust mechanism 95a as described above. It is discharged out of the chamber 21 and out of the housing 6.
- the supply of the first processing liquid is stopped, and the processing of the substrate 9 with the first processing liquid is completed.
- the first processing liquid remaining on the substrate 9 is removed from the substrate 9 by the rotation of the substrate 9, and the first drainage portion 96 a is passed through the outer cup space 45, the cup drainage port 451, and the chamber drainage port 271. Is discharged.
- the cup rotating mechanism 7 is controlled by the control unit 10, whereby the cup unit 4 rotates from the first processing state and stops in the direction shown in FIG. 6 (step S16). .
- the direction of the cup part 4 shown in FIG. 6 that is, the state of the cup part 4) is referred to as “second processing state”.
- the cup exhaust port 461 overlaps the large chamber exhaust port 281 of the second chamber exhaust port group 286b in the vertical direction.
- the lower end of the cup exhaust port 461 and the upper end of the large chamber exhaust port 281 are close to each other and face each other in the vertical direction. Thereby, the cup exhaust port 461 and the large chamber exhaust port 281 of the second chamber exhaust port group 286b are substantially connected.
- the gas in the cup portion 4 is discharged out of the chamber 21 and out of the housing 6 through the cup exhaust port 461 and the large chamber exhaust port 281 by the second exhaust mechanism 95b (see FIG. 4). Further, the gas outside the cup portion 4 is also discharged out of the chamber 21 and out of the housing 6 through the inner cup space 46, the cup exhaust port 461 and the large chamber exhaust port 281.
- the cup drain port 451 overlaps with the chamber drain port 271 at the center of the second chamber drain port group 276b in the vertical direction.
- the lower end of the cup drain port 451 and the upper end of the chamber drain port 271 are close to each other and face each other in the vertical direction. Thereby, the cup drainage port 451 and the chamber drainage port 271 of the second chamber drainage port group 276b are substantially connected.
- Each chamber drain port 271 (see FIG. 4) other than the chamber drain port 271 overlaps the outer convex portion 453 of the cup bottom 42 in the vertical direction and is substantially closed.
- step S17 When the cup unit 4 is in the second processing state, supply of the second processing liquid from the upper nozzle 51 of the processing liquid supply unit 5 to the upper surface 91 of the rotating substrate 9 is started (step S17).
- the second processing liquid continuously supplied to the central portion of the upper surface 91 of the substrate 9 spreads on the upper surface 91 of the substrate 9 by the centrifugal force and covers the entire surface of the upper surface 91. Thereby, the process with respect to the upper surface 91 of the board
- the second processing liquid that has reached the outer peripheral edge of the substrate 9 scatters radially outward from the outer peripheral edge and flows into the outer cup space 45 of the cup portion 4.
- the second processing liquid that has flowed into the outer cup space 45 passes through the cup drain port 451 and the chamber drain port 271 to the second drain part 96b (see FIG. 4) outside the chamber 21 and outside the housing 6. Discharged.
- the second processing liquid discharged to the second drainage part 96a is discarded.
- emitted to the 2nd drainage part 96b is collect
- the gas in the chamber 21 is passed through the inner cup space 46, the cup exhaust port 461, and the large chamber exhaust port 281 by the second exhaust mechanism 95b as described above. It is discharged out of the chamber 21 and out of the housing 6.
- the supply of the second processing liquid is stopped, and the processing of the substrate 9 with the second processing liquid is completed.
- the second processing liquid remaining on the substrate 9 is removed from the substrate 9 by the rotation of the substrate 9, and the second drainage part 96 b is passed through the outer cup space 45, the cup drainage port 451 and the chamber drainage port 271. Is discharged.
- the cup rotating mechanism 7 is controlled by the control unit 10, whereby the cup unit 4 rotates from the second processing state and stops in the direction shown in FIG. 7 (step S18). .
- the direction of the cup part 4 shown in FIG. 7 that is, the state of the cup part 4) is referred to as a “third processing state”.
- the cup exhaust port 461 overlaps the large chamber exhaust port 281 of the third chamber exhaust port group 286c in the vertical direction.
- the lower end of the cup exhaust port 461 and the upper end of the large chamber exhaust port 281 are close to each other and face each other in the vertical direction. Thereby, the cup exhaust port 461 and the large chamber exhaust port 281 of the third chamber exhaust port group 286c are substantially connected.
- the gas in the cup portion 4 is discharged out of the chamber 21 and out of the housing 6 via the cup exhaust port 461 and the large chamber exhaust port 281 by the third exhaust mechanism 95c (see FIG. 4). Further, the gas outside the cup portion 4 in the chamber 21 is also discharged out of the chamber 21 and out of the housing 6 through the inner cup space 46, the cup exhaust port 461 and the large chamber exhaust port 281.
- the cup drain port 451 overlaps with the chamber drain port 271 at the center of the third chamber drain port group 276c in the vertical direction.
- the lower end of the cup drain port 451 and the upper end of the chamber drain port 271 are close to each other and face each other in the vertical direction.
- the cup drain port 451 and the chamber drain port 271 of the third chamber drain port group 276c are substantially connected.
- Each chamber drain port 271 (see FIG. 4) other than the chamber drain port 271 overlaps the outer convex portion 453 of the cup bottom 42 in the vertical direction and is substantially closed.
- the supply of the third processing liquid to the upper surface 91 of the rotating substrate 9 is started from the upper nozzle 51 of the processing liquid supply unit 5 (step S19).
- the third processing liquid continuously supplied to the central portion of the upper surface 91 of the substrate 9 spreads on the upper surface 91 of the substrate 9 by the centrifugal force and covers the entire upper surface 91. Thereby, the process with respect to the upper surface 91 of the board
- the third processing liquid that has reached the outer peripheral edge of the substrate 9 scatters radially outward from the outer peripheral edge and flows into the outer cup space 45 of the cup portion 4.
- the third processing liquid that has flowed into the outer cup space 45 passes through the cup drain port 451 and the chamber drain port 271 to the third drain part 96c (see FIG. 4) outside the chamber 21 and outside the housing 6. Discharged.
- the third processing liquid discharged to the third drainage part 96c is discarded.
- the third processing liquid discharged to the third drainage unit 96c is collected and reused as necessary.
- the gas in the chamber 21 is passed through the inner cup space 46, the cup exhaust port 461, and the large chamber exhaust port 281 by the third exhaust mechanism 95c as described above. It is discharged out of the chamber 21 and out of the housing 6.
- the supply of the third processing liquid is stopped, and the processing of the substrate 9 by the third processing liquid is completed.
- the third processing liquid remaining on the substrate 9 is removed from the substrate 9 by the rotation of the substrate 9, and the third drainage part 96c is passed through the outer cup space 45, the cup drainage port 451, and the chamber drainage port 271. Is discharged.
- step S20 When the third processing liquid is removed from the substrate 9, the rotation of the substrate 9, the substrate holding part 31, and the top plate 22 is stopped (step S20). Subsequently, the cup rotating mechanism 7 is controlled by the control unit 10, whereby the cup unit 4 rotates and enters a standby state shown in FIG. 2 (step S21). Step S21 may be performed in parallel with step S20.
- the chamber lid unit 26 and the top plate 22 are raised and are positioned at the retracted position shown in FIG. Thereafter, the lid 65 moves downward, the carry-in port 64 is opened, and the substrate 9 is carried out of the substrate processing apparatus 1 (step S22).
- the lower end of the cup exhaust port 461 is close to the chamber bottom portion 256, and the upper end of each large chamber exhaust port 281 and each small chamber exhaust port 284.
- the upper end is close to the cup bottom 42.
- a plurality of large chamber exhaust ports 281 arranged in the circumferential direction are provided in the chamber bottom portion 256.
- the controller 10 controls the cup rotating mechanism 7 so that the cup exhaust port 461 is selectively overlapped with any one of the plurality of large chamber exhaust ports 281.
- the gas in the cup portion 4 is passed through the cup exhaust port 461 and the large chamber exhaust port 281 by the first exhaust mechanism 95a. Then, it is discharged out of the chamber 21 and out of the housing 6.
- the gas in the cup portion 4 is caused to flow from the cup exhaust port 461 and the large chamber exhaust port 281 by the second exhaust mechanism 95b. Is discharged out of the chamber 21 and out of the housing 6. Further, in a state where the cup exhaust port 461 overlaps the large chamber exhaust port 281 of the third chamber exhaust port group 286c, the gas in the cup portion 4 is caused to flow from the cup exhaust port 461 and the large chamber exhaust port 281 by the third exhaust mechanism 95c. Is discharged out of the chamber 21 and out of the housing 6.
- the cup rotation mechanism 7 rotates the cup portion 4 in the chamber 21 and the housing 6 without opening the chamber 21 and the housing 6, thereby exhausting the exhaust from the cup portion 4.
- the exhaust mechanism to be performed can be easily switched among the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c.
- the exhaust destination from the cup portion 4 (hereinafter referred to as “exhaust destination”) can be switched by a mechanism having a simple structure, the structure of the substrate processing apparatus 1 can be simplified. Thereby, the substrate processing apparatus 1 can be reduced in size compared with the case where the switch which switches the exhaust destination from a cup part is provided in the exterior of a housing. Further, by switching the exhaust destination from the cup portion 4 in the chamber 21, compared to the case where exhaust is guided by a common pipe or the like to the switch outside the housing, the gaseous or mist processing liquid in the exhaust is mixed. Can be suppressed.
- a plurality of chamber drain ports 271 arranged in the circumferential direction are provided in the chamber bottom portion 256.
- the cup exhaust port 461 is overlapped with the large chamber exhaust port 281 of the first chamber exhaust port group 286a
- the cup drain port 451 overlaps with the central chamber drain port 271 of the first chamber drain port group 276a.
- the first processing liquid flowing into the cup portion 4 is discharged to the first drainage portion 96a outside the chamber 21 and outside the housing 6 through the cup drainage port 451 and the chamber drainage port 271.
- the cup drain port 451 is the center chamber drain port 271 of the second chamber drain port group 276b. And overlap.
- the second processing liquid that has flowed into the cup portion 4 is discharged to the second drainage portion 96 b outside the chamber 21 and outside the housing 6 via the cup drainage port 451 and the chamber drainage port 271.
- the cup drain port 451 overlaps with the central chamber drain port 271 of the third chamber drain port group 276c.
- the third processing liquid that has flowed into the cup portion 4 is discharged to the third drainage portion 96 c outside the chamber 21 and outside the housing 6 via the cup drainage port 451 and the chamber drainage port 271.
- the cup unit 4 is rotated by the cup rotating mechanism 7, thereby switching the exhaust destination from the cup unit 4 and the destination of the processing liquid from the cup unit 4 (hereinafter referred to as “exhaust”). “Liquid tip”)) can be switched simultaneously by one mechanism.
- exhaust the exhaust destination from the cup unit 4 and the destination of the processing liquid from the cup unit 4 (hereinafter referred to as “exhaust”). “Liquid tip”)) can be switched simultaneously by one mechanism.
- a partition wall 44 is provided between the cup inner wall part 43 and the cup outer wall part 41, and the processing liquid from the processing liquid supply part 5 is placed between the cup outer wall part 41 and the partition wall 44.
- the cup drain port 451 is located radially outside the lower end of the partition wall 44, and the cup exhaust port 461 is located radially inside the lower end of the partition wall 44.
- the rotor portion 72 is disposed in the housing 6, and the stator portion 71 is disposed outside the housing 6. For this reason, it is possible to change the positions of the cup drain port 451 and the cup exhaust port 461 by rotating the cup portion 4 with the carry-in port 64 of the housing 6 closed. In addition, the internal space of the housing 6 can be reduced in size. Furthermore, by disposing the stator portion 71 around the rotor portion 72, other configurations such as the substrate rotation mechanism 32 and the lower nozzle 52 can be easily disposed in the space below the central portion of the housing 6.
- the rotor portion 72 is disposed in the chamber 21, the cup portion 4 is rotated and the cup drain port 451 and the cup exhaust port 461 are rotated while the chamber 21 is sealed and the chamber space is maintained. The position can be changed. Moreover, since the stator part 71 is arrange
- the rotor unit 72 rotates in a floating state in the chamber space in the housing 6. For this reason, it is not necessary to provide a structure for supporting the rotor portion 72 in the chamber space, and the substrate processing apparatus 1 can be downsized and the apparatus structure can be simplified. Further, since the processing liquid does not adhere to the support structure, generation of particles or the like due to drying of the attached processing liquid can be prevented. Further, since particles and the like are not generated due to friction between the rotor portion 72 and the support structure, the cleanliness of the chamber space and the housing 6 can be improved.
- the cup rotation mechanism 7 is controlled by the control unit 10, and as shown in FIG. 8, the cup exhaust port 461 is superposed vertically on the small chamber exhaust port 284 of the first chamber exhaust port group 286a.
- the cup exhaust port 461 is opposed to the small chamber exhaust port 284 in the vertical direction. Thereby, the cup exhaust port 461 is substantially connected to the small chamber exhaust port 284.
- the gas in the cup portion 4 is discharged out of the chamber 21 and out of the housing 6 by the first exhaust mechanism 95a (see FIG. 4) through the cup exhaust port 461 and the small chamber exhaust port 284.
- the cup rotating mechanism 7 changes the direction of the cup portion 4 from a state where the cup exhaust port 461 and the large chamber exhaust port 281 overlap to a state where the cup exhaust port 461 and the small chamber exhaust port 284 overlap.
- the overlapping area between the cup exhaust port 461 and the chamber exhaust port is changed.
- the exhaust flow rate from the chamber 21 by the 1st exhaust mechanism 95a becomes small.
- cup drain port 451 overlaps the upper chamber drain port 271 in FIG. 4 among the three chamber drain ports 271 of the first chamber drain port group 276a.
- the first processing liquid that has flowed into the outer cup space 45 of the cup portion 4 passes through the cup drain port 451 and the chamber drain port 271, and the first drain portion 96 a (see FIG. 4) outside the chamber 21 and outside the housing 6. (See below).
- the cup rotation mechanism 7 is controlled by the control unit 10, and the overlapping area between the cup exhaust port 461 and the chamber exhaust port is changed, whereby the exhaust flow rate from the chamber 21 is changed to the substrate flow rate. 9 can be easily changed in accordance with the contents of the processing for the 9. Further, in the substrate processing apparatus 1, the overlapping area between the cup exhaust port 461 and the chamber exhaust port is changed by changing the cup exhaust port 461 to the large chamber exhaust port 281 (see FIG. 1) of the first chamber exhaust port group 286 a or the small one. Selectively overlying the chamber exhaust port 284. Thus, the exhaust flow rate from the chamber 21 can be changed with a simple structure without changing the suction force by the first exhaust mechanism 95a.
- FIG. 9 is an enlarged view showing the small chamber exhaust port 284 of the first chamber exhaust port group 286a and the cup exhaust port 461 overlapping the small chamber exhaust port 284.
- the upper end surface 285a of the bottom protrusion 285 in which the small chamber exhaust port 284 is provided is substantially perpendicular to the above-described vertical direction.
- a substantially circular region at the center of the lower end of the cup exhaust port 461 is an overlapping region 461 a that overlaps with the upper end of the small chamber exhaust port 284.
- An annular region around the overlapping region 461a (that is, a region excluding the overlapping region 461a) among the lower ends of the cup exhaust port 461 is a non-overlapping region 461b that does not overlap with the upper end of the small chamber exhaust port 284.
- the non-overlapping region 461b of the cup exhaust port 461 is close to the upper end surface 285a of the bottom protruding portion 285 of the chamber bottom portion 256 and faces vertically. As a result, the non-overlapping region 461b of the cup exhaust port 461 is substantially closed. For this reason, when exhaust is performed by the first exhaust mechanism 95a via the cup exhaust port 461 and the small chamber exhaust port 284, the gas below the cup portion 4 passes through the non-overlapping region 461b of the cup exhaust port 461. Suction into the small chamber exhaust port 284 is prevented or suppressed. As a result, the gas in the cup part 4 can be discharged efficiently. In the substrate processing apparatus 1, the non-overlapping region 461 b of the cup exhaust port 461 can be easily closed using a simple structure of the upper end surface 285 a of the bottom protrusion 285.
- the small chamber exhaust port 284 is not necessarily provided in the bottom protrusion 285 as long as it is provided in the chamber bottom 256. Even when the bottom protrusion 285 is omitted, the non-overlapping region 461b of the cup exhaust port 461 is substantially occluded by the proximity of the chamber bottom 256 around the small chamber exhaust port 284. Even in this case, the gas in the cup portion 4 can be efficiently discharged as described above.
- the cup rotating mechanism 7 rotates the cup portion 4 by a minute angle (for example, 5 degrees) while maintaining the overlap with.
- FIG. 10 is a plan view showing the vicinity of the cup exhaust port 461.
- the cup portion 4 is rotated by a minute angle while maintaining the overlap between the cup exhaust port 461 and the one chamber exhaust port. Indicates the state.
- a parallel oblique line is given to an overlapping region between the cup exhaust port 461 and the large chamber exhaust port 281.
- the overlap area between the cup exhaust port 461 and the one chamber exhaust port (in the example shown in FIG. 10, the large chamber exhaust port 281) is changed by the rotation of the cup portion 4 at a minute angle.
- the exhaust flow rate from the chamber 21 by the first exhaust mechanism 95a can be finely adjusted with a simple structure.
- the non-overlapping region excluding the overlapping region with the large chamber exhaust port 281 among the lower ends of the cup exhaust port 461 is the upper end surface of the bottom protrusion 282 in which the one chamber exhaust port is provided ( That is, it closes substantially by being close to a part of chamber bottom part 256) and facing up and down.
- the upper end surface of the bottom protrusion is substantially perpendicular to the vertical direction.
- the non-overlapping region excluding the overlapping region with the cup exhaust port 461 out of the upper end of the one chamber exhaust port is the lower end surface of the bottom protrusion 462 in which the cup exhaust port 461 is provided (that is, the cup bottom portion 42). It closes substantially by being close to a part) and facing up and down.
- the lower end surface of the bottom protrusion 462 is also substantially perpendicular to the vertical direction.
- the exhaust flow rate by selectively overlapping the cup exhaust port 461 with the large chamber exhaust port 281 or the small chamber exhaust port 284.
- the desired exhaust flow rate can be changed by changing the area of the overlapping region between the cup exhaust port 461 and the large chamber exhaust port 281
- the overlapping area between the cup exhaust port 461 and the chamber exhaust port described above can be changed. May be performed by rotating the cup portion 4 while maintaining the overlap between the cup exhaust port 461 and the large chamber exhaust port 281.
- the exhaust flow rate from the chamber 21 by the first exhaust mechanism 95a can be finely adjusted with a simple structure.
- the non-overlapping region except for the overlapping region with the large chamber exhaust port 281 at the lower end of the cup exhaust port 461 is close to the chamber bottom portion 256 and faces vertically. Is substantially occluded. Further, the non-overlapping region except the overlapping region with the cup exhaust port 461 in the upper end of the large chamber exhaust port 281 is substantially closed by being close to the cup bottom portion 42 and facing vertically. Thereby, the gas in the cup part 4 can be efficiently discharged by the first exhaust mechanism 95a.
- the non-overlapping region of the cup exhaust port 461 is substantially closed by facing the upper end surface of the bottom protrusion 282 formed inside the large chamber exhaust port 281 in the vertical direction.
- the non-overlapping region of the large chamber exhaust port 281 is substantially closed by facing the lower end surface of the bottom protrusion 462 formed inside the cup exhaust port 461 and facing the upper and lower directions.
- the upper end surface of the bottom protrusion 282 and the lower end surface of the bottom protrusion 462 are substantially perpendicular to the vertical direction.
- the non-overlapping region of the cup exhaust port 461 and the non-overlapping region of the large chamber exhaust port 281 can be substantially closed with a simple structure.
- the change in the exhaust flow rate by the first exhaust mechanism 95a during the treatment with the first treatment liquid and the fine adjustment of the exhaust flow rate have been described.
- the exhaust by the second exhaust mechanism 95b during the treatment with the second treatment liquid The same applies to the change of the flow rate and the fine adjustment of the exhaust flow rate.
- the rotation speed of the substrate 9 is decreased (or the rotation of the substrate 9 is stopped), and the upper surface 91 of the substrate 9 is moved to the first.
- the cup rotating mechanism 7 is controlled by the control unit 10, and as shown in FIG. 11, the cup draining port 451 is the same as that of the three chamber draining ports 271 of the first chamber draining port group 276a. It overlaps with the lower chamber drain port 271 inside.
- the first processing liquid in the outer cup space 45 of the cup portion 4 passes through the cup drain port 451 and the chamber drain port 271, and the first drain portion 96 a outside the chamber 21 and outside the housing 6. Is discharged.
- the cup exhaust port 461 is located at a position spaced in the circumferential direction from the large chamber exhaust port 281 and the small chamber exhaust port 284 of the first chamber exhaust port group 286a, and the inner convex portion 283 of the first chamber exhaust port group 286a. Is superimposed on.
- the lower end of the cup exhaust port 461 is close to the upper end surface of the inner convex portion 283 and faces in the vertical direction, and is substantially closed. Thereby, the exhaust in the chamber 21 by the first exhaust mechanism 95a is substantially stopped.
- the cup rotating mechanism 7 is controlled by the control unit 10, and the cup exhaust port 461 is connected to the large chamber exhaust port 281 (the small chamber exhaust port 284) of the first chamber exhaust port group 286a. Or can be selectively overlapped with the inner convex portion 283.
- the first processing liquid is discharged to the first drainage portion 96a via the cup drainage port 451, the exhaust state in the chamber 21 and the exhaust stop state by the first exhaust mechanism 95a are easily selected. can do.
- FIG. 12 is a bottom view showing another preferred cup portion 4a.
- FIG. 13 is a plan view showing a chamber lower surface portion 251 of another preferred chamber 21a.
- the cup outer wall 41, the partition wall 44, and the cup inner wall 43 of the cup 4 a are also shown by broken lines.
- a bottom protrusion 462a having a shape different from the bottom protrusion 462 of the cup 4 shown in FIG. 3 is provided on the cup bottom 42 and protrudes downward.
- the other structure of the cup part 4a is substantially the same as the cup part 4 shown in FIG. 3, and the same reference numerals are given in the following description.
- the bottom protrusion 462a is long in the circumferential direction and has a substantially arc shape centered on the central axis J1.
- the bottom protrusion 462a is provided over substantially the entire area in the circumferential direction where the bottom protrusion 462 shown in FIG. 3 and the two inner protrusions 463 adjacent to both sides in the circumferential direction of the bottom protrusion 462 are arranged. .
- a lower end surface 462b of the bottom protrusion 462a is substantially perpendicular to the vertical direction.
- the cup exhaust port 461 is formed in the bottom protrusion 462a at a substantially center in the circumferential direction of the bottom protrusion 462a.
- the cup exhaust port 461 has the same size and shape as the cup exhaust port 461 shown in FIG.
- the bottom protrusion 272 a and the chamber drain port 271 a having different shapes from the bottom protrusion 272 and the chamber drain port 271 of the chamber 21 shown in FIG. Is provided.
- the other structure of the chamber 21a is substantially the same as the chamber 21 shown in FIG. 3, and the same reference numerals are given in the following description.
- three bottom protrusions 272 a and three chamber drain ports 271 a are provided on the chamber bottom 256 of the chamber lower surface 251.
- the three chamber drain ports 271a are respectively arranged at the positions of the chamber drain port groups 276a to 276c shown in FIG.
- a first drainage portion 96a, a second drainage portion 96b, and a third drainage portion 96c are connected to the three chamber drainage ports 271a, respectively.
- each bottom protrusion 272a and each chamber drain port 271a are long in the circumferential direction and have a substantially arc shape centered on the central axis J1.
- Each bottom protrusion 272a is provided over substantially the entire circumferential region in which the three bottom protrusions 272 of one chamber drainage port group shown in FIG. 3 are arranged.
- Each chamber drainage port 271a is provided over substantially the entire area in the circumferential direction where the three chamber drainage ports 271 of one chamber drainage port group are arranged.
- the circumferential length of the chamber drainage port 271a is longer than the circumferential length of the cup drainage port 451 shown in FIG.
- the cup drain port 451 is connected to the periphery of the chamber drain port 271a to which the first drain portion 96a is connected. It overlaps in the vertical direction at the center of the direction.
- this state is referred to as a “large flow exhaust state”.
- the gas in the cup portion 4a is exhausted out of the chamber 21a and out of the housing 6 by the first exhaust mechanism 95a through the cup exhaust port 461 and the large chamber exhaust port 281.
- the first processing liquid in the outer cup space 45 of the cup portion 4a is discharged to the first drainage portion 96a via the cup drainage port 451 and the chamber drainage port 271a.
- the upper end of the small chamber exhaust port 284 of the first chamber exhaust port group 286a is substantially opposed to the lower end surface 462b of the bottom protruding portion 462a extending around the cup exhaust port 461 so as to be opposed vertically. Blocked.
- the cup exhaust port 461 is displaced from the large chamber exhaust port 281 in the circumferential direction by rotating from the large flow exhaust state while maintaining the overlap between the cup drain port 451 and the chamber drain port 271a. Move to the desired position. For example, the cup exhaust port 461 overlaps the small chamber exhaust port 284 of the first chamber exhaust port group 286a in the vertical direction while maintaining the overlap between the cup drain port 451 and the chamber drain port 271a.
- this state is referred to as a “small flow exhaust state”.
- the gas in the cup portion 4a is discharged out of the chamber 21a by the first exhaust mechanism 95a through the cup exhaust port 461 and the small chamber exhaust port 284.
- the exhaust flow rate from the chamber 21a in the small flow rate exhaust state is smaller than the exhaust flow rate from the chamber 21a in the large flow rate exhaust state.
- the first processing liquid in the outer cup space 45 of the cup portion 4a passes through the cup drain port 451 and the chamber drain port 271a, and the first drain portion 96a. Is discharged.
- the upper end of the large chamber exhaust port 281 of the first chamber exhaust port group 286a is substantially opposed to the lower end surface 462b of the bottom protrusion 462a extending around the cup exhaust port 461 so as to be opposed vertically. Blocked.
- the cup exhaust port 461 is rotated from the large flow exhaust state or the small flow exhaust state while maintaining the overlap between the cup drain port 451 and the chamber drain port 271a, so that the cup exhaust port 461 becomes the large chamber exhaust port 281. And it moves from the small chamber exhaust port 284 to a position shifted in the circumferential direction. For example, while maintaining the overlap between the cup drain port 451 and the chamber drain port 271a, the cup exhaust port 461 overlaps the inner convex portion 283 of the first chamber exhaust port group 286a in the vertical direction.
- this state is referred to as an “exhaust stop state”.
- the lower end of the cup exhaust port 461 is substantially blocked by facing the upper end surface of the inner convex portion 283 of the first chamber exhaust port group 286a in the vertical direction.
- the upper end of the large chamber exhaust port 281 of the first chamber exhaust port group 286a is substantially close to the lower end surface 462b of the bottom protrusion 462a extending around the cup exhaust port 461, so as to be substantially opposed to the vertical direction.
- the upper end of the small chamber exhaust port 284 of the first chamber exhaust port group 286a is substantially close to the lower end surface of the inner convex portion 463 that is adjacent to the bottom protrusion 462a in the circumferential direction, thereby substantially facing the vertical direction. Blocked.
- the suction of the gas in the cup portion 4a via the cup exhaust port 461 by the first exhaust mechanism 95a is substantially stopped.
- the first processing liquid in the outer cup space 45 of the cup portion 4a passes through the cup drain port 451 and the chamber drain port 271a. It is discharged to the drainage part 96a.
- the exhaust state and the exhaust stop state by the first exhaust mechanism 95a while continuing to discharge the first treatment liquid to the first drain portion 96a. Can be easily switched. Further, in the exhaust state by the first exhaust mechanism 95a, the exhaust flow rate can be easily changed by selectively switching between the large flow exhaust state and the small flow exhaust state. Furthermore, as described above, the exhaust stop state can be realized with a simple structure.
- the large-flow exhaust state, the small-flow exhaust state, and the exhaust stop state by the first exhaust mechanism 95a during the processing with the first processing liquid have been described.
- FIG. 14 is a cross-sectional view showing a substrate processing apparatus 1a according to the second embodiment.
- the substrate processing apparatus 1a includes a cup portion 4b and a chamber 21b having different shapes from the cup portion 4 and the chamber 21 shown in FIG.
- the substrate processing apparatus 1a further includes an elevating mechanism 33. Except for these points, the substrate processing apparatus 1a has substantially the same structure as the substrate processing apparatus 1 shown in FIG. In the following description, the same reference numerals are given to the configurations of the substrate processing apparatus 1 a corresponding to the respective configurations of the substrate processing apparatus 1.
- the cup portion 4 b includes another partition wall 47 located between the partition wall 44 and the cup outer wall portion 41 in the radial direction.
- the partition walls 44 and 47 are referred to as “first partition wall 44” and “second partition wall 47”, respectively, in order to facilitate the distinction between the partition walls 44 and 47.
- the second partition wall 47 has a substantially cylindrical shape centered on the central axis J1.
- the second partition wall 47 extends upward from the cup bottom 42.
- the second partition wall 47 expands outward in the radial direction as it goes upward from the cup bottom portion 42, and expands upward substantially parallel to the central axis J1 above a predetermined position in the vertical direction.
- the cup drain port 451 is located radially inward of the lower end of the second partition wall 47 and radially outward of the lower end of the first partition wall 44.
- first outer cup space 45a the space between the first partition wall 44 and the second partition wall 47 of the cup portion 4b.
- second outer cup space 45b The space between the second partition wall 47 of the cup portion 4b and the cup outer wall portion 41 is referred to as a “second outer cup space 45b”.
- FIG. 15 is a bottom view showing the cup portion 4b.
- another cup drainage port 457 is provided at a position away from the cup drainage port 451 on the cup bottom 42 of the cup portion 4 b.
- the cup drain port 457 is located on the radially outer side than the lower end of the second partition wall 47 and on the radially inner side of the lower end of the cup outer wall portion 41. In other words, the cup drain port 457 is located on the radially outer side than the cup drain port 451.
- the cup drain ports 451 and 457 are referred to as an “inner cup drain port 451” and an “outer cup drain port 457” in order to facilitate the distinction between the cup drain ports 451 and 457, respectively. .
- the size and shape of the lower end of the outer cup drain port 457 are approximately the same as the size and shape of the lower end of the inner cup drain port 451, for example.
- the area of the lower end of the outer cup drain port 457 is approximately equal to the area of the lower end of the inner cup drain port 451.
- the outer cup drain port 457 and the inner cup drain port 451 are aligned in the radial direction, but the outer cup drain port 457 and the inner cup drain port 451 are mutually connected in the circumferential direction. You may arrange
- FIG. 16 is a bottom view showing the chamber lower surface portion 251 of the chamber 21b.
- the cup outer wall portion 41, the first partition wall 44, and the cup inner wall portion 43 of the cup portion 4b are shown together by broken lines.
- the chamber bottom portion 256 of the chamber lower surface portion 251 of the chamber 21 b is provided with another chamber drainage port 277 located radially outside the plurality of chamber drainage ports 271.
- the chamber drain ports 271 and 277 are referred to as an “inner chamber drain port 271” and an “outer chamber drain port 277”, respectively, in order to facilitate the distinction between the chamber drain ports 271 and 277. .
- the outer chamber drain port 277 is located at a position different from the plurality of inner chamber drain ports 271 in the circumferential direction.
- the size and shape of the lower end of the outer chamber drainage port 277 are, for example, approximately the same as the size and shape of the lower end of the inner chamber drainage port 271. In other words, the area of the lower end of the outer chamber drain port 277 is approximately equal to the area of the lower end of the inner chamber drain port 271.
- the outer chamber drain port 277 is another drain section independent of the first drain section 96a, the second drain section 96b, and the third drain section 96c (hereinafter referred to as “fourth drain section 96d”). Connected to.
- another large chamber exhaust port 281 is provided at the chamber bottom 256 of the chamber lower surface portion 251.
- the other large chamber exhaust port 281 is connected to another exhaust mechanism independent of the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c (hereinafter referred to as “fourth exhaust mechanism 95d”). Is done.
- the large chamber exhaust port 281 is located on the opposite side of the outer chamber drain port 277 and the central axis J1, and is arranged in the circumferential direction with the other large chamber exhaust ports 281 and the plurality of small chamber exhaust ports 284.
- the outer cup drain port 457 overlaps the outer chamber drain port 277 in the vertical direction.
- the lower end of the outer cup drain port 457 is close to the upper end of the outer chamber drain port 277 and faces in the vertical direction.
- the outer cup drain port 457 and the outer chamber drain port 277 are substantially connected.
- the outer cup drain port 457 is connected to the fourth drain section 96d via the outer chamber drain port 277.
- the inner cup drain port 451 is substantially closed by overlapping the outer convex portion 273 of the chamber bottom portion 256 in the vertical direction.
- the cup exhaust port 461 overlaps the above-described large chamber exhaust port 281 connected to the fourth exhaust mechanism 95d in the vertical direction.
- the lower end of the cup exhaust port 461 is close to the upper end of the large chamber exhaust port 281 and opposes in the vertical direction. Thereby, the cup exhaust port 461 and the large chamber exhaust port 281 are substantially connected.
- the cup exhaust port 461 is connected to the fourth exhaust mechanism 95d via the large chamber exhaust port 281.
- the elevating mechanism 33 moves the substrate holding part 31 relative to the cup part 4b in the vertical direction.
- the lifting mechanism 33 is disposed adjacent to the substrate rotation mechanism 32.
- the substrate 9 is moved in the vertical direction together with the substrate holder 31.
- the substrate 9 is movable in the vertical direction between the position shown in FIG. 14 and the position shown in FIG.
- first position the relative position of the substrate 9 to the cup portion 4b shown in FIG. 17
- second position the relative position of the substrate 9 to the cup portion 4b shown in FIG. 14
- the second position is above the first position.
- the orientation of the cup portion 4b is different from the orientation shown in FIG. 14, and is the same as the orientation shown in FIG. Specifically, the cup exhaust port 461 overlaps with the large chamber exhaust port 281 connected to the first exhaust mechanism 95a in the vertical direction.
- the inner cup drain port 451 overlaps with the inner chamber drain port 271 connected to the first drain part 96a in the vertical direction.
- the outer cup drain port 457 is substantially blocked by overlapping with the outer convex portion 279 provided on the chamber bottom portion 256 of the chamber lower surface portion 251 in the vertical direction.
- the large chamber exhaust port 281 (see FIG. 16) connected to the fourth exhaust mechanism 95d is substantially closed by overlapping with the inner convex portion 463 of the cup portion 4b in the vertical direction.
- the lower end portion of the plate side wall portion 225 of the top plate 22 is located radially inward from the second partition wall 47 of the cup portion 4b, It overlaps with the upper end of the second partition wall 47 in the radial direction. Therefore, the first processing liquid supplied from the processing liquid supply unit 5 onto the substrate 9 flows into the first outer cup space 45a.
- the first processing liquid in the first outer cup space 45a is discharged to the first drainage part 96a via the inner cup drainage port 451 and the inner chamber drainage port 271.
- the substrate processing apparatus 1a similarly, when the substrate 9 is processed with the second processing liquid, the substrate 9 is positioned at the first position, and the second processing liquid flows into the first outer cup space 45a and enters the second drain. It is discharged to the liquid part 96b. Similarly, when the substrate 9 is processed with the third processing liquid, the substrate 9 is located at the first position, and the third processing liquid flows into the first outer cup space 45a and is discharged into the third drainage part 96c. Is done.
- the substrate 9 when the fourth processing liquid is supplied from the processing liquid supply unit 5 to the substrate 9, the substrate 9 is positioned at the second position as shown in FIG.
- the lower end portion of the plate side wall portion 225 of the top plate 22 is located above the upper end of the second partition wall 47 of the cup portion 4b.
- the lower end portion of the plate side wall portion 225 is located radially inward of the cup outer wall portion 41 of the cup portion 4b, and overlaps with the upper end portion of the cup outer wall portion 41 in the radial direction. For this reason, the 4th process liquid supplied on the board
- the fourth processing liquid in the second outer cup space 45b is the outer cup drain port 457 and the outer chamber drain port.
- the liquid is discharged to the fourth drainage part 96d (see FIG. 16) outside the chamber 21b and outside the housing 6 through the port 277.
- the fourth treatment liquid discharged to the fourth drainage part 96d is collected and reused.
- the space into which the processing liquid flows in the cup portion 4b is divided into the first outer cup space 45a and the second outer cup space 45b, and the first outer cup space 45a is lifted by moving the substrate 9 up and down.
- the second outer cup space 45b can be selected and used. Thereby, mixing of the multiple types of processing liquid in the cup part 4b can be suppressed.
- the processing liquid discharged in the outer cup space 45b different from the other processing liquid in the above example, the fourth processing liquid
- the fourth processing liquid may be a processing liquid different from the first to third processing liquids, or may be the same type of processing liquid.
- FIG. 18 is a plan view of a chamber lower surface portion 251 showing another preferred example of the chamber 21b.
- the outer chamber drainage port 277 connected to the fourth drainage section 96d is at the same circumferential position as the one inner chamber drainage port 271 connected to the second drainage section 96b.
- the fourth processing liquid from the substrate 9 located at the second position is discharged to the fourth drainage section 96d through the outer cup drainage port 457 and the outer chamber drainage port 277.
- the exhaust in the chamber 21 is performed by the second exhaust mechanism 95b via the large chamber exhaust port 281 located on the opposite side of the outer chamber drain port 277 across the central axis J1.
- the fourth exhaust mechanism can be omitted and the exhaust mechanism can be simplified.
- FIG. 19 is a bottom view showing the cup portion 4c of the substrate processing apparatus 1b according to the third embodiment.
- FIG. 20 is a plan view showing the chamber lower surface portion 251 of the chamber 21c of the substrate processing apparatus 1b.
- the cup outer wall 41, the partition wall 44, and the cup inner wall 43 of the cup 4c are shown together by broken lines.
- the substrate processing apparatus 1b has substantially the same structure as the substrate processing apparatus 1 shown in FIG. 1, except that the cup part 4c and the chamber 21c are different in shape from the cup part 4 and the chamber 21 shown in FIG.
- the same reference numerals are given to the configurations of the substrate processing apparatus 1 b corresponding to the respective configurations of the substrate processing apparatus 1.
- a cup exhaust port 464 arranged in the circumferential direction together with the cup exhaust port 461 is provided in the cup bottom portion 42.
- the cup exhaust port 464 is provided in a plurality of bottom protrusions 465 provided on the cup bottom 42 and protruding downward.
- the cup exhaust port 464 is adjacent to the cup exhaust port 461 in the circumferential direction.
- the cup exhaust ports 461 and 464 are referred to as a “large cup exhaust port 461” and a “small cup exhaust port 464”, respectively, in order to facilitate the distinction between the cup exhaust ports 461 and 464.
- the large cup exhaust port 461 and the small cup exhaust port 464 are collectively referred to simply as “cup exhaust port”.
- the diameter of the small cup exhaust port 464 is smaller than the diameter of the large cup exhaust port 461.
- the area of the lower end of the small cup exhaust port 464 is smaller than the area of the lower end of the large cup exhaust port 461.
- the outer diameter of the bottom protrusion 465 in which the small cup exhaust port 464 is provided is smaller than the outer diameter of the bottom protrusion 462 in which the large cup exhaust port 461 is provided.
- the lower end surface of the bottom protrusion 465 is substantially perpendicular to the vertical direction.
- the small chamber exhaust port 284 provided in the chamber bottom portion 256 of the chamber lower surface portion 251 of the chamber 21 shown in FIG. Instead of the exhaust port 284, an inner convex portion 283 is provided. Therefore, one large chamber exhaust port 281 (hereinafter simply referred to as “chamber exhaust port 281”) is connected to each of the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c.
- the cup portion 4c rotates in the direction shown in FIG. 19 to the first drainage section 96a outside the chamber 21c and outside the housing 6 via the cup drainage port 451 shown in FIG. 19 and the chamber drainage port 271 at the center of the first chamber drainage port group 276a shown in FIG. And discharged.
- the gas in the cup portion 4c passes through the first exhaust through the large cup exhaust port 461 and the chamber exhaust port 281 located on the opposite side of the central axis J1 from the first chamber drain port group 276a. It is discharged out of the chamber 21c and out of the housing 6 by the mechanism 95a.
- the cup rotating mechanism 7 is controlled by the control unit 10, and as shown in FIG. It overlaps with the chamber exhaust port 281 of the chamber exhaust port group 286a in the vertical direction.
- the small cup exhaust port 464 is opposed to the chamber exhaust port 281 in the vertical direction.
- the small cup exhaust port 464 is substantially connected to the chamber exhaust port 281.
- the gas in the cup portion 4c is discharged out of the chamber 21c and out of the housing 6 by the first exhaust mechanism 95a via the small cup exhaust port 464 and the chamber exhaust port 281.
- the area of the lower end of the small cup exhaust port 464 is smaller than the area of the lower end of the large cup exhaust port 461. For this reason, the direction of the cup portion 4c is changed by the cup rotating mechanism 7 from the state where the large cup exhaust port 461 and the chamber exhaust port 281 overlap to the state where the small cup exhaust port 464 and the chamber exhaust port 281 overlap. Thus, the overlapping area between the cup exhaust port and the chamber exhaust port 281 is changed. Thereby, the exhaust flow rate from the chamber 21c by the 1st exhaust mechanism 95a becomes small.
- cup drain port 451 shown in FIG. 19 overlaps the lower chamber drain port 271 in FIG. 20 among the three chamber drain ports 271 of the first chamber drain port group 276a shown in FIG. .
- the first processing liquid flowing into the outer cup space 45 of the cup portion 4c is discharged to the first drainage portion 96a outside the chamber 21c and outside the housing 6 via the cup drainage port 451 and the chamber drainage port 271. Is done.
- the cup rotating mechanism 7 is controlled by the control unit 10 as in the substrate processing apparatus 1 shown in FIG. 1, and the overlapping area of the cup exhaust port and the chamber exhaust port 281 is changed.
- the exhaust flow rate from the chamber 21c can be easily changed in accordance with the contents of the processing on the substrate 9 and the like.
- the change in the overlapping area between the cup exhaust port and the chamber exhaust port 281 changes the large cup exhaust port 461 or the small cup exhaust port 464 to the chamber exhaust port 281 of the first chamber exhaust port group 286a. It is to selectively overlap. Thereby, the exhaust flow rate from the chamber 21c can be changed with a simple structure without changing the suction force by the first exhaust mechanism 95a.
- FIG. 22 is an enlarged view showing the small cup exhaust port 464 and the chamber exhaust port 281 of the first chamber exhaust port group 286a overlapping the small cup exhaust port 464 in the vertical direction.
- the lower end surface 465a of the bottom protrusion 465 in which the small cup exhaust port 464 is provided is substantially perpendicular to the vertical direction as described above.
- a substantially circular region at the center of the upper end of the chamber exhaust port 281 is an overlapping region 281 a that overlaps with the lower end of the small cup exhaust port 464.
- An annular region around the overlap region 281a (that is, a region excluding the overlap region 281a) of the upper end of the chamber exhaust port 281 is a non-overlap region 281b that does not overlap with the lower end of the small cup exhaust port 464.
- the non-overlapping region 281b of the chamber exhaust port 281 is close to the lower end surface 465a of the bottom protrusion 465 of the cup bottom 42 and faces vertically. As a result, the non-overlapping region 281b of the chamber exhaust port 281 is substantially closed. For this reason, when the first exhaust mechanism 95a performs exhaust through the small cup exhaust port 464 and the chamber exhaust port 281, the gas below the cup portion 4 c is transferred through the non-overlapping region 281 b of the chamber exhaust port 281. The suction into the chamber exhaust port 281 is prevented or suppressed. As a result, the gas in the cup part 4c can be discharged efficiently. In the substrate processing apparatus 1b, the non-overlapping region 281b of the chamber exhaust port 281 can be easily closed using a simple structure of the lower end surface 465a of the bottom protrusion 465.
- the small cup exhaust port 464 is not necessarily provided in the bottom protrusion 465 as long as it is provided in the cup bottom 42. Even when the bottom protrusion 465 is omitted, the non-overlapping region 281 b of the chamber exhaust port 281 is substantially blocked by approaching the cup bottom 42 around the small cup exhaust port 464. Even in this case, the gas in the cup portion 4c can be efficiently discharged as described above.
- fine adjustment of the exhaust flow rate from the chamber 21c by the first exhaust mechanism 95a may be required in the same manner as the substrate processing apparatus 1 described above.
- one cup exhaust port of the large cup exhaust port 461 and the small cup exhaust port 464 shown in FIG. 19 overlaps the chamber exhaust port 281 connected to the first exhaust mechanism 95a shown in FIG. While maintaining the overlap between one cup exhaust port and the chamber exhaust port 281, the cup rotating mechanism 7 rotates the cup portion 4 c by a minute angle (for example, 5 degrees).
- the overlapping area of the one cup exhaust port and the chamber exhaust port 281 is changed by rotating the cup portion 4c at a minute angle.
- the exhaust flow rate from the chamber 21c by the first exhaust mechanism 95a can be finely adjusted with a simple structure.
- the non-overlapping region of the upper end of the chamber exhaust port 281 excluding the overlapping region with the one cup exhaust port is below the bottom protruding portion in which the one cup exhaust port is provided.
- similar to an end surface namely, surface substantially perpendicular
- the non-overlapping region excluding the overlapping region with the chamber exhaust port 281 in the lower end of the one cup exhaust port is the upper end surface of the bottom protrusion 282 in which the chamber exhaust port 281 is provided (that is, the chamber bottom 256 By being close to the upper surface in the vicinity of a part of the surface substantially perpendicular to the vertical direction, which is a part, it is substantially closed.
- the flow rate change by the first exhaust mechanism 95a during the treatment with the first treatment liquid has been described.
- the second exhaust mechanism 95b during the treatment with the second treatment liquid is described.
- FIG. 23 is a sectional view showing a substrate processing apparatus 1c according to the fourth embodiment.
- the substrate processing apparatus 1c has substantially the same structure as the substrate processing apparatus 1 shown in FIG. In the following description, the same reference numerals are given to the configurations of the substrate processing apparatus 1c corresponding to the configurations of the substrate processing apparatus 1.
- the protruding portion 34 protrudes downward (that is, toward the cup portion 4) from the lower surface of the base portion 311 of the substrate holding portion 31.
- the protrusion 34 has an annular shape surrounding the center axis J1.
- the protruding portion 34 is a substantially cylindrical portion centered on the central axis J1.
- the protrusion 34 is formed integrally with the base 311, for example.
- the protruding portion 34 is provided on the radially outer side than the partition wall 44 of the cup portion 4 and on the radially inner side of the cup outer wall portion 41.
- the protruding portion 34 may be provided to be spaced upward from the partition wall 44 at the same radial position as the partition wall 44 of the cup portion 4.
- the substrate processing apparatus 1 c similarly to the above-described substrate processing apparatus 1, when the substrate 9 is processed, the rotation speed of the substrate 9 is decreased (or the rotation of the substrate 9 is stopped), and the upper surface 91 of the substrate 9. May be padded with a processing solution. At this time, there is a possibility that the processing liquid that has flowed from the substrate 9 onto the upper surface of the base portion 311 goes around the lower surface of the base portion 311 (that is, travels along the surface of the base portion 311 to the lower surface).
- the annular projecting portion 34 projecting downward from the lower surface of the base portion 311 is provided. Is transferred to the outer cup space 45 of the cup portion 4.
- the protruding portion 34 is provided on the outer side in the radial direction than the partition wall 44 of the cup portion 4 or at the same position in the radial direction as the partition wall 44, the processing liquid falls into the inner cup space 46 and the cup exhaust port. It is possible to prevent the air from flowing into the exhaust mechanism from 461.
- the protrusion 34 may be provided in the above-described substrate processing apparatuses 1, 1a, 1b.
- FIG. 24 is a sectional view showing a substrate processing apparatus 1d according to the fifth embodiment.
- a cup part 4d and a chamber 21d having different shapes from the cup part 4 and the chamber 21 shown in FIG. 1 are provided.
- the cup exhaust port 461 is provided in the cup inner wall portion 43, and the chamber exhaust ports 281 and 284 are arranged radially with the cup inner wall portion 43 on the radially inner side of the cup inner wall portion 43.
- chamber exhaust ports 281 and 284 are arranged radially with the cup inner wall portion 43 on the radially inner side of the cup inner wall portion 43.
- the substrate processing apparatus 1d includes a protruding portion 34, similar to the substrate processing apparatus 1c shown in FIG.
- the other structure of the substrate processing apparatus 1d is substantially the same as the substrate processing apparatus 1 shown in FIG. In the following description, the same reference numerals are given to the configurations of the substrate processing apparatus 1 d corresponding to the respective configurations of the substrate processing apparatus 1.
- FIG. 25 is a cross-sectional view showing a cross section of the chamber 21d and the cup portion 4d cut at the positions of the cup exhaust port 461 and the chamber exhaust ports 281 and 284.
- FIG. 26 is a plan view of the chamber lower surface portion 251. In FIG. 26, the cup outer wall 41, the cup inner wall 43, the chamber inner wall 255, and the duct inner wall 257 are shown together by broken lines.
- the partition wall 44 shown in FIG. 1 is omitted, and the space inside the cup portion 4d is only the cup space 45.
- the substantially cylindrical cup inner wall part 43 is located on the radially outer side than the position shown in FIG.
- the substantially cylindrical chamber inner wall portion 255 is located on the radially outer side than the position shown in FIG. 1.
- a substantially cylindrical duct inner wall portion 257 is provided between the chamber inner wall portion 255 and the substrate rotation mechanism 32.
- the duct inner wall portion 257 extends downward from the lower surface of the lower surface central portion 254.
- the chamber bottom portion 256 extends radially inward from the chamber inner wall portion 255, and the lower end portion of the duct inner wall portion 257 is connected to the chamber bottom portion 256.
- a space between the chamber inner wall portion 255 and the duct inner wall portion 257 (that is, a space surrounded by the chamber inner wall portion 255, the lower surface central portion 254, the duct inner wall portion 257, and the chamber bottom portion 256) is a plurality of independent spaces. It is divided into.
- the space between the chamber inner wall portion 255 and the duct inner wall portion 257 includes a first duct 287a, a second duct 287b, and a third duct 287c.
- the first duct 287a is provided with a through hole penetrating the chamber bottom portion 256 and the housing bottom portion 61, and the first duct 287a is connected to the first exhaust mechanism 95a shown in FIG.
- the second duct 287b is connected to the second exhaust mechanism 95b through another similar through hole provided at the bottom, and the third duct 287c is also connected to the third exhaust through another similar through hole provided at the bottom. Connected to the exhaust mechanism 95c.
- the cup exhaust port 461 is, for example, a through hole that penetrates the cup inner wall portion 43.
- the cross section of the through hole is, for example, circular.
- the cross-sectional shape of the through hole may be changed as appropriate.
- only one cup exhaust port 461 is provided near the upper end of the cup inner wall portion 43.
- the cup exhaust port 461 is opposed to the inner peripheral surface of the protruding portion 34 located radially outside the cup inner wall portion 43 in the radial direction.
- the lower end of the protrusion 34 is located below the lower end of the cup exhaust port 461 or at the same position in the vertical direction as the lower end of the cup exhaust port 461.
- the chamber exhaust ports 281 and 284 are, for example, through holes that penetrate the chamber inner wall portion 255.
- the cross section of the through hole is, for example, circular.
- the cross-sectional shape of the through hole may be changed as appropriate.
- the chamber exhaust ports 281 and 284 are arranged in the circumferential direction in the vicinity of the upper end of the chamber inner wall portion 255.
- the chamber exhaust ports 281 and 284 are disposed at approximately the same position in the vertical direction as the cup exhaust port 461. In the example shown in FIG. 25, three large chamber exhaust ports 281 and three small chamber exhaust ports 284 are alternately arranged in the circumferential direction.
- the cross-sectional shape and cross-sectional area of the large chamber exhaust port 281 are approximately the same as the cross-sectional shape and cross-sectional area of the cup exhaust port 461.
- the cross-sectional area of the small chamber exhaust port 284 is smaller than the cross-sectional areas of the cup exhaust port 461 and the large chamber exhaust port 281.
- first chamber exhaust port group 286a one large chamber exhaust port group 286a
- second chamber exhaust port group 286b one large chamber exhaust port group 286b
- third chamber exhaust port group 286c one large chamber exhaust port group 286c
- the first chamber exhaust port group 286a, the second chamber exhaust port group 286b, and the third chamber exhaust port group 286c are collectively referred to as “chamber exhaust port groups 286a to 286c”.
- each chamber exhaust port group 286a to 286c is surrounded by a two-dot chain line.
- the large chamber exhaust port 281 and the small chamber exhaust port 284 of the first chamber exhaust port group 286a are connected to the first exhaust mechanism 95a via the first duct 287a.
- the large chamber exhaust port 281 and the small chamber exhaust port 284 of the second chamber exhaust port group 286b are connected to the second exhaust mechanism 95b via the second duct 287b.
- the large chamber exhaust port 281 and the small chamber exhaust port 284 of the third chamber exhaust port group 286c are connected to the third exhaust mechanism 95c via the third duct 287c.
- the exhaust mechanisms 95a to 95c are arranged outside the substrate processing apparatus 1d. While the substrate processing apparatus 1d is used, suction by the exhaust mechanisms 95a to 95c is continuously performed.
- the chamber bottom portion 256 is provided with a plurality of (for example, nine) chamber drain ports 271 as in FIG. 4, and the plurality of chamber drain ports 271 are the first chamber drain ports.
- a port group 276a, a second chamber drain port group 276b, and a third chamber drain port group 276c are provided.
- the first chamber drainage port group 276a, the second chamber drainage port group 276b, and the third chamber drainage port group 276c each have a first axis exhaust port group 286a and a second chamber exhaust port group across the central axis J1. It is located on the opposite side to 286b and the third chamber exhaust port group 286c.
- each chamber drain port group 276a to 276c three chamber drain ports 271 are arranged at equal angular intervals in the circumferential direction.
- the three chamber drain ports 271 of the first chamber drain port group 276a are connected to the first drain section 96a.
- the three chamber drain ports 271 of the second chamber drain port group 276b are connected to the second drain section 96b.
- the three chamber drain ports 271 of the third chamber drain port group 276c are connected to the third drain portion 96c.
- the first drainage part 96a, the second drainage part 96b, and the third drainage part 96c are provided independently of each other.
- the cup rotation mechanism 7 is controlled by the control unit 10 (see FIG. 1), so that the cup exhaust port 461 is one of the plurality of large chamber exhaust ports 281 and the plurality of small chamber exhaust ports 284. Are selectively overlaid on one. Further, the cup drain port 451 is selectively overlapped with any one of the plurality of chamber drain ports 271.
- the cup drain port 451 is the central chamber drain port 271 of the first chamber drain port group 276a. And overlaps vertically.
- the gas in the cup portion 4d is discharged by the first exhaust mechanism 95a via the cup exhaust port 461, the large chamber exhaust port 281 and the first duct 287a. Further, the liquid in the cup portion 4d is discharged by the first drainage portion 96a through the cup drainage port 451 and the chamber drainage port 271.
- the cup drain port 451 is the upper chamber in FIG. 26 of the first chamber drain port group 276a. It overlaps with the drainage port 271 in the vertical direction.
- the gas in the cup portion 4d is exhausted by the first exhaust mechanism 95a through the cup exhaust port 461, the small chamber exhaust port 284, and the first duct 287a.
- the cross-sectional area of the small chamber exhaust port 284 is smaller than the cross-sectional area of the large chamber exhaust port 281, the exhaust flow rate is reduced by using the small chamber exhaust port 284.
- the liquid in the cup portion 4d is discharged by the first drainage portion 96a. In other words, by rotating the cup portion 4d, it is possible to change only the exhaust flow rate without changing the exhaust destination.
- the cup exhaust port 461 is connected to the first chamber exhaust port group 286a. It is located at a position spaced apart from the large chamber exhaust port 281 and the small chamber exhaust port 284 in the circumferential direction. In this state, the cup exhaust port 461 does not overlap with any of the chamber exhaust ports 281 and 284 and is opposed to the outer peripheral surface of the chamber inner wall portion 255 in the radial direction, and is substantially separated by the chamber inner wall portion 255. Blocked. Thereby, the suction of the gas in the cup portion 4d via the cup exhaust port 461 is substantially stopped. As a result, the liquid in the cup portion 4d is discharged by the first drainage portion 96a while the discharge of the gas in the cup portion 4d is substantially stopped.
- the cup drain port 451 is the center chamber drain port 271 of the second chamber exhaust port group 276b. And overlaps vertically.
- the gas in the cup portion 4d is discharged by the second exhaust mechanism 95b at a relatively large flow rate, and the liquid in the cup portion 4d is discharged by the second drainage portion 96b.
- the cup drain port 451 is the right chamber in FIG. 26 of the second chamber drain port group 276b. It overlaps with the drainage port 271 in the vertical direction.
- the gas in the cup portion 4d is discharged by the second exhaust mechanism 95b at a relatively small flow rate, and the liquid in the cup portion 4d is discharged by the second drainage portion 96b. That is, by rotating the cup portion 4d, it is possible to change only the exhaust flow rate without changing the exhaust destination.
- the cup exhaust port 461 is both the chamber exhaust port 281 and 284. It does not overlap and is substantially closed close to the outer peripheral surface of the chamber inner wall 255. Thereby, the suction of the gas in the cup portion 4d via the cup exhaust port 461 is substantially stopped. As a result, the liquid in the cup portion 4d is discharged by the second drainage portion 96b while the discharge of the gas in the cup portion 4d is substantially stopped.
- the cup drain port 451 is the central chamber drain port 271 of the third chamber drain port group 276c. And overlaps vertically.
- the gas in the cup portion 4d is discharged by the third exhaust mechanism 95c at a relatively large flow rate, and the liquid in the cup portion 4d is discharged by the third drainage portion 96c.
- the cup drain port 451 is the right chamber in FIG. 26 of the third chamber drain port group 276c. It overlaps with the drainage port 271 in the vertical direction.
- the gas in the cup portion 4d is discharged by the third exhaust mechanism 95c at a relatively small flow rate, and the liquid in the cup portion 4d is discharged by the third drainage portion 96c. That is, by rotating the cup portion 4d, it is possible to change only the exhaust flow rate without changing the exhaust destination.
- the cup exhaust port 461 is both the chamber exhaust port 281 and 284. It does not overlap and is substantially closed close to the outer peripheral surface of the chamber inner wall 255. Thereby, the suction of the gas in the cup portion 4d via the cup exhaust port 461 is substantially stopped. As a result, the liquid in the cup portion 4d is discharged by the third drainage portion 96c while the discharge of the gas in the cup portion 4d is substantially stopped.
- the cup rotating mechanism 7 rotates the cup portion 4d in the chamber 21d and the housing 6 without opening the chamber 21d and the housing 6.
- the exhaust mechanism for exhausting from the cup portion 4d can be easily switched among the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c.
- the exhaust destination from the cup part 4d can be switched by a mechanism having a simple structure, the structure of the substrate processing apparatus 1d can be simplified and reduced in size. Further, by switching the exhaust destination from the cup portion 4d in the chamber 21d, it is possible to suppress the gas or mist processing liquid in the exhaust from being mixed.
- the cup exhaust port 461 is provided in the cup inner wall 43, and the chambers of the first chamber exhaust port group 286a, the second chamber exhaust port group 286b, and the third chamber exhaust port group 286c are provided.
- Exhaust ports 281 and 284 are provided in the chamber inner wall portion 255 facing the cup inner wall portion 43.
- the cup exhaust port 461 and the chamber exhaust ports 281 and 284 are provided above the cup bottom portion 42, whereby the processing liquids are supplied to the exhaust mechanisms 95a to 95c via the cup exhaust port 461 and the chamber exhaust ports 281 and 284. Can be prevented from entering.
- the cup exhaust port 461 and the chamber exhaust ports 281 and 284 are disposed below the substrate holding part 31, so that the processing liquid can be further prevented from entering the exhaust mechanisms 95a to 95c.
- an annular projecting portion 34 projecting downward from the lower surface of the base portion 311 is provided in the same manner as the substrate processing apparatus 1c shown in FIG. For this reason, the processing liquid that has entered the lower surface of the base portion 311 travels along the outer peripheral surface of the protruding portion 34 and falls into the cup space 45 of the cup portion 4d.
- the substrate processing apparatus 1 d it is possible to prevent the processing liquid that has entered the lower surface of the base portion 311 from moving inward in the radial direction from the protruding portion 34. As a result, it is possible to further suppress the processing liquid from entering the exhaust mechanisms 95a to 95c via the cup exhaust port 461 and the chamber exhaust ports 281 and 284.
- the lower end of the protruding portion 34 is located below the lower end of the cup exhaust port 461 or at the same position in the vertical direction as the lower end of the cup exhaust port 461. Thereby, it is possible to further suppress the processing liquid from entering the exhaust mechanisms 95a to 95c via the cup exhaust port 461 and the chamber exhaust ports 281 and 284.
- one chamber drain port 271a (see FIG. 13) having a substantially arc shape that is long in the circumferential direction is provided. Also good. The same applies to the second chamber drain port group 276b and the third chamber drain port group 276c.
- the structure of the substrate processing apparatus 1d may be applied to the substrate processing apparatus 1a described above.
- two large and small cup exhaust ports 461 are provided on the cup inner wall 43 of the cup portion 4d, and the chamber exhaust port groups 286a to 286c are provided. Only one chamber exhaust port 281 may be provided, and one of the two cup exhaust ports 461 may be selectively overlapped with the chamber exhaust port 281 to change the exhaust flow rate.
- the substrate processing apparatuses 1, 1a to 1d can be variously changed.
- the substrate processing apparatus 1 shown in FIG. 1 it is sufficient that at least two chamber exhaust port groups among the chamber exhaust port groups 286a to 286c shown in FIG.
- only one of the large chamber exhaust port 281 and the small chamber exhaust port 284 may be provided. That is, the chambers 21 and 21d only need to be provided with at least two chamber exhaust ports connected to at least two exhaust mechanisms independent of each other.
- the two chamber exhaust ports are referred to as “first chamber exhaust port” and “second chamber exhaust port”.
- the cup exhaust ports 461 are selectively used as the first chamber exhaust port or the second chamber exhaust port by rotating the cup portions 4 and 4d. By overlapping, the exhaust mechanism can be easily switched as described above.
- the nine chamber drain ports 271 shown in FIGS. 4 and 26 are not necessarily provided. However, at the chamber bottom 256, it is preferable that at least a first chamber drain port and a second chamber drain port corresponding to the first chamber exhaust port and the second chamber exhaust port, respectively, be provided.
- the first chamber drainage port and the second chamber drainage port are respectively connected to two drainage sections that are independent of each other.
- the cup exhaust port 461 When the cup exhaust port 461 is overlaid on the first chamber exhaust port, the cup drain port 451 is overlaid on the first chamber drain port, and the cup exhaust port 461 is overlaid on the second chamber exhaust port. Then, the cup drain port 451 is overlapped with the second chamber drain port. Thereby, as described above, the switching of the exhaust destination and the switching of the drainage destination can be performed simultaneously by one mechanism.
- the first chamber exhaust port and the second chamber exhaust port described above are, for example, the large chamber exhaust port 281 connected to the first exhaust mechanism 95a and the large chamber exhaust port 281 connected to the second exhaust mechanism 95b. May be.
- the first chamber drainage port and the second chamber drainage port are one chamber drainage port 271 connected to the first drainage section 96a and one one connected to the second drainage section 96b. This is a chamber drain port 271.
- the first chamber exhaust port and the second chamber exhaust port are, for example, a small chamber exhaust port 284 connected to the third exhaust mechanism 95c and a small chamber exhaust port 284 connected to the first exhaust mechanism 95a. May be.
- the first chamber drain port and the second chamber drain port include one chamber drain port 271 connected to the third drain portion 96c and one chamber drain port 96a connected to the first drain portion 96a. This is a chamber drain port 271.
- cup exhaust port 461 is provided in the cup part, it is not necessarily required to be provided in the cup inner wall part 43 or the cup bottom part 42.
- the cup exhaust port 461 may be provided in the vicinity of the boundary between the cup inner wall portion 43 and the cup bottom portion 42.
- the cup exhaust port 461 may also be provided on the cup outer wall 41 as in the substrate processing apparatus 1e shown in FIG.
- the first chamber exhaust port and the second chamber exhaust port for example, the large chamber exhaust port 281 described above and the cup exhaust port 461 in the vertical direction in the chamber outer wall portion 252 that faces the cup outer wall portion 41.
- the flange portion 48 that extends radially inward from the upper end portion of the cup outer wall portion 41 and further expands downward is opposed to the cup exhaust port 461 in the radial direction. It is preferable to be provided.
- the flange portion 48 preferably further covers both sides of the cup exhaust port 461 in the circumferential direction.
- the substrate processing apparatus 1 shown in FIG. 1 and the substrate processing apparatus 1a shown in FIG. 14 among the plurality of sets of the large chamber exhaust port 281 and the small chamber exhaust port 284 shown in FIGS. It is sufficient that at least one set of the large chamber exhaust port 281 and the small chamber exhaust port 284 is provided. In this case, it is preferable that two chamber drainage ports 271 corresponding to the large chamber exhaust port 281 and the small chamber exhaust port 284 are provided in the chamber bottom portion 256. In the chamber bottom 256 of the substrate processing apparatus 1b shown in FIG. 20, it is sufficient that at least one chamber exhaust port 281 is provided. In this case, it is preferable that one chamber drainage port group corresponding to the one chamber exhaust port 281 is provided in the chamber bottom portion 256.
- the arrangement in the circumferential direction may be changed as appropriate.
- Number and circumferential direction of (inner) cup drain port 451, outer cup drain port 457, (large) cup exhaust port 461, small cup exhaust port 464, outer convex portion 453, and inner convex portion 463 provided on the cup bottom 42 The arrangement in may also be changed as appropriate.
- the number of the convex portions 273 and 279 and the inner convex portion 283 and the arrangement in the circumferential direction may be changed as appropriate.
- the number and the arrangement in the circumferential direction may be changed as appropriate.
- the processing liquid that has flowed into the cup portion from the substrate 9 may be discharged out of the chamber and the housing through a common pipe, and the discharge destination may be switched by a valve or the like outside the housing. Even in this case, since the processing solution valves and pipes are relatively small, an increase in the size of the substrate processing apparatuses 1, 1a to 1e is suppressed.
- the cup outer wall 41, the cup inner wall 43, the (first) partition wall 44, and the second partition wall 47 of the cup parts 4, 4a to 4d may have various shapes other than the substantially cylindrical shape as long as they are approximately cylindrical. It may be.
- the chamber opening / closing mechanism 23 is not necessarily required to move the chamber lid 26 in the vertical direction.
- the chamber main body 25 may be moved in the vertical direction while the chamber lid 26 is fixed.
- the chambers 21, 21a to 21d are not necessarily limited to a substantially cylindrical shape, and may have various shapes. In the above-described substrate processing apparatuses 1, 1a to 1e, the chambers 21, 21a to 21d do not necessarily need to form a sealed space.
- the chamber lid portion 26 and the top plate 22 may be omitted, and the chambers 21, 21a to 21d may be open chambers whose upper portions are open.
- the elevating mechanism 33 does not necessarily need to move the substrate 9 and the substrate holding part 31 in the up-down direction.
- the elevating mechanism 33 moves the cup part 4b in the up-down direction while the substrate holding part 31 is fixed in the up-down direction. Also good.
- the shape and structure of the stator portion 71 and the rotor portion 72 of the cup rotating mechanism 7 may be variously changed.
- the rotor part 72 is not necessarily rotated in a floating state, and a structure such as a guide for mechanically supporting the rotor part 72 is provided in the chambers 21, 21a to 21d, and the rotor part 72 is provided along the guide. You may rotate.
- the cup rotation mechanism 7 is not necessarily a hollow motor, and a shaft rotation type motor may be used as the cup rotation mechanism.
- the substrate processing apparatus described above may be used for processing glass substrates used in display devices such as liquid crystal display devices, plasma displays, and FED (field display) in addition to semiconductor substrates.
- the substrate processing apparatus described above may be used for processing of an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, and the like.
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Abstract
Description
4,4a~4d カップ部
5 処理液供給部
6 ハウジング
7 カップ回転機構
9 基板
10 制御部
21,21a~21d チャンバ
31 基板保持部
33 昇降機構
34 突出部
41 カップ外側壁部
42 カップ底部
43 カップ内側壁部
44 (第1)仕切り壁
45 (外側)カップ空間
45a 第1外側カップ空間
45b 第2外側カップ空間
47 第2仕切り壁
61 ハウジング底部
71 ステータ部
72 ロータ部
95a 第1排気機構
95b 第2排気機構
95c 第3排気機構
95d 第4排気機構
96a 第1排液部
96b 第2排液部
96c 第3排液部
96d 第4排液部
252 チャンバ外側壁部
255 チャンバ内側壁部
256 チャンバ底部
271 (内)チャンバ排液ポート
271a チャンバ排液ポート
277 外チャンバ排液ポート
281 (大)チャンバ排気ポート
281a 重複領域
281b 非重複領域
282,285 底部突出部
284 小チャンバ排気ポート
285a (底部突出部の)上端面
451 (内)カップ排液ポート
457 外カップ排液ポート
461 (大)カップ排気ポート
461a 重複領域
461b 非重複領域
462,462a,465 底部突出部
462b,465a (底部突出部の)下端面
464 小カップ排気ポート
J1 中心軸
S11~S22 ステップ
Claims (33)
- 基板を処理する基板処理装置であって、
水平状態で基板を保持する基板保持部と、
前記基板上に処理液を供給する処理液供給部と、
カップ排気ポートが設けられ、前記基板からの処理液を受けるカップ部と、
前記基板保持部および前記カップ部を内部に収容するチャンバと、
上下方向を向く中心軸を中心として前記カップ部を回転するカップ回転機構と、
前記カップ回転機構により前記カップ部を回転させ、前記中心軸を中心とする周方向における前記カップ排気ポートの位置を決定する制御部と、
を備え、
前記チャンバに、前記周方向に並ぶ第1チャンバ排気ポートおよび第2チャンバ排気ポートが設けられ、
前記制御部が前記カップ回転機構を制御することにより、前記カップ排気ポートが前記第1チャンバ排気ポートまたは前記第2チャンバ排気ポートに選択的に重ねられ、
前記カップ排気ポートが前記第1チャンバ排気ポートに重なる状態では、前記第1チャンバ排気ポートに接続される第1排気機構により、前記カップ部内の気体が前記カップ排気ポートおよび前記第1チャンバ排気ポートを介して前記チャンバ外に排出され、
前記カップ排気ポートが前記第2チャンバ排気ポートに重なる状態では、前記第2チャンバ排気ポートに接続される第2排気機構により、前記カップ部内の気体が前記カップ排気ポートおよび前記第2チャンバ排気ポートを介して前記チャンバ外に排出される。 - 請求項1に記載の基板処理装置であって、
前記カップ排気ポートが前記カップ部の底部に設けられ、
前記第1チャンバ排気ポートおよび前記第2チャンバ排気ポートが、前記チャンバの底部に設けられる。 - 請求項2に記載の基板処理装置であって、
前記カップ排気ポートが、前記第1チャンバ排気ポートおよび前記第2チャンバ排気ポートから前記周方向に離間した位置に位置する状態で、前記カップ排気ポートの下端が前記チャンバの前記底部に近接することにより、または、前記第1チャンバ排気ポートの上端および前記第2チャンバ排気ポートの上端が前記カップ部の前記底部に近接することにより、前記カップ排気ポートを介した前記カップ部内の気体の吸引が停止される。 - 請求項2に記載の基板処理装置であって、
前記カップ部の前記底部にカップ排液ポートが設けられ、
前記チャンバの前記底部に、前記周方向に並ぶ第1チャンバ排液ポートおよび第2チャンバ排液ポートが設けられ、
前記カップ排気ポートが前記第1チャンバ排気ポートに重ねられた状態では、前記カップ排液ポートが前記第1チャンバ排液ポートと重なり、前記第1チャンバ排液ポートに接続される前記チャンバ外の第1排液部へと前記カップ部内の処理液が排出され、
前記カップ排気ポートが前記第2チャンバ排気ポートに重なる状態では、前記カップ排液ポートが前記第2チャンバ排液ポートと重なり、前記第2チャンバ排液ポートに接続される前記チャンバ外の第2排液部へと前記カップ部内の処理液が排出され、
前記第1チャンバ排液ポートの前記周方向の長さが、前記カップ排液ポートの前記周方向の長さよりも長く、
前記カップ排液ポートが前記第1チャンバ排液ポートに重なり、前記カップ排気ポートが前記第1チャンバ排気ポートに重なる状態から、前記カップ排液ポートと前記第1チャンバ排液ポートとの重複を維持しつつ前記カップ部が回転することにより、前記カップ排気ポートが前記第1チャンバ排気ポートからずれた位置へと移動し、
前記カップ排気ポートが、前記カップ部の前記底部に設けられて下方に突出する底部突出部内に設けられ、
前記底部突出部の下端面が、前記上下方向に垂直であり、
前記カップ排気ポートが前記第1チャンバ排気ポートからずれた前記位置に位置する状態において、前記第1チャンバ排気ポートの上端が、前記底部突出部の前記下端面に近接することにより、前記カップ排気ポートを介した前記カップ部内の気体の吸引が停止される。 - 請求項1に記載の基板処理装置であって、
前記カップ部が、前記中心軸を中心とする環状であり、
前記カップ部が、
円環状の底部と、
前記底部の内周部から上方に拡がる円筒状の内側壁部と、
前記底部の外周部から上方に拡がる円筒状の外側壁部と、
を備え、
前記内側壁部または前記外側壁部に前記カップ排気ポートが設けられ、
前記カップ部の前記内側壁部または前記外側壁部と対向する前記チャンバの側壁部に、前記第1チャンバ排気ポートおよび前記第2チャンバ排気ポートが設けられる。 - 請求項5に記載の基板処理装置であって、
前記カップ排気ポートが、前記第1チャンバ排気ポートおよび前記第2チャンバ排気ポートから前記周方向に離間した位置に位置する状態で、前記カップ排気ポートが前記チャンバの前記側壁部に近接することにより、前記カップ排気ポートを介した前記カップ部内の気体の吸引が停止される。 - 請求項1に記載の基板処理装置であって、
前記カップ部の前記底部にカップ排液ポートが設けられ、
前記チャンバの前記底部に、前記周方向に並ぶ第1チャンバ排液ポートおよび第2チャンバ排液ポートが設けられ、
前記カップ排気ポートが前記第1チャンバ排気ポートに重ねられた状態では、前記カップ排液ポートが前記第1チャンバ排液ポートと重なり、前記第1チャンバ排液ポートに接続される前記チャンバ外の第1排液部へと前記カップ部内の処理液が排出され、
前記カップ排気ポートが前記第2チャンバ排気ポートに重なる状態では、前記カップ排液ポートが前記第2チャンバ排液ポートと重なり、前記第2チャンバ排液ポートに接続される前記チャンバ外の第2排液部へと前記カップ部内の処理液が排出される。 - 請求項7に記載の基板処理装置であって、
前記チャンバの前記底部に、前記第1チャンバ排液ポートおよび前記第2チャンバ排液ポートと共に前記周方向に並び、前記第1排液部が接続されるもう1つの第1チャンバ排液ポートが設けられ、
前記カップ排液ポートが前記もう1つの第1チャンバ排液ポートに重なる状態では、前記カップ部内の処理液が前記第1排液部へと排出され、前記カップ排気ポートが、前記第1チャンバ排気ポートおよび前記第2チャンバ排気ポートから前記周方向に離間した位置に位置する。 - 請求項7に記載の基板処理装置であって、
前記第1チャンバ排液ポートの前記周方向の長さが、前記カップ排液ポートの前記周方向の長さよりも長く、
前記カップ排液ポートが前記第1チャンバ排液ポートに重なり、前記カップ排気ポートが前記第1チャンバ排気ポートに重なる状態から、前記カップ排液ポートと前記第1チャンバ排液ポートとの重複を維持しつつ前記カップ部が回転することにより、前記カップ排気ポートが前記第1チャンバ排気ポートからずれた位置へと移動する。 - 請求項7に記載の基板処理装置であって、
前記カップ部が、前記中心軸を中心とする環状であり、
前記カップ部が、
円環状の前記底部と、
前記底部の内周部から上方に拡がる円筒状の内側壁部と、
前記底部の外周部から上方に拡がる円筒状の外側壁部と、
前記内側壁部と前記外側壁部との間にて前記底部から上方に拡がる円筒状の仕切り壁と、
を備え、
前記処理液供給部からの処理液は、前記カップ部の前記外側壁部と前記仕切り壁との間の空間に流入し、
前記カップ排液ポートが、前記仕切り壁よりも前記中心軸を中心とする径方向外側に位置し、
前記カップ排気ポートが、前記仕切り壁よりも前記径方向内側に位置する。 - 請求項10に記載の基板処理装置であって、
前記基板保持部を前記カップ部に対して前記上下方向に相対的に移動する昇降機構をさらに備え、
前記カップ部が、前記仕切り壁と前記外側壁部との間にて前記底部から上方に拡がる筒状のもう1つの仕切り壁をさらに備え、
前記カップ排液ポートが、前記もう1つの仕切り壁よりも前記径方向内側に位置し、
前記カップ部の前記底部に、前記もう1つの仕切り壁よりも前記径方向外側に位置する他のカップ排液ポートが設けられ、
前記チャンバの前記底部に、前記第1チャンバ排液ポートおよび前記第2チャンバ排液ポートよりも前記径方向外側に位置し、他の排液部が接続される他のチャンバ排液ポートが設けられ、
前記昇降機構により、前記基板が、前記カップ部に対する第1位置と前記第1位置よりも上方の第2位置との間を前記基板保持部と共に移動し、
前記基板が前記第1位置に位置する状態では、前記処理液供給部から前記基板上に供給された処理液が、前記カップ部の前記もう1つの仕切り壁と前記仕切り壁との間の空間に流入し、
前記基板が前記第2位置に位置する状態では、前記処理液供給部から前記基板上に供給された処理液が、前記カップ部の前記外側壁部と前記もう1つの仕切り壁との間の空間に流入し、前記他のカップ排液ポートが前記他のチャンバ排液ポートに重ねられ、前記チャンバ外の前記他の排液部へと処理液が排出される。 - 請求項10に記載の基板処理装置であって、
前記基板保持部が、前記中心軸を中心とする円板状の保持部本体を備え、
前記保持部本体が、前記カップ部の上方にて前記カップ部と前記上下方向に対向し、
前記保持部本体の下面から下方に突出し、前記仕切り壁よりも径方向外側、または、前記仕切り壁と径方向の同じ位置にて前記中心軸の周囲を囲む環状の突出部が設けられる。 - 請求項1に記載の基板処理装置であって、
前記基板保持部が、前記中心軸を中心とする円板状の保持部本体を備え、
前記保持部本体が、前記カップ部の上方にて前記カップ部と前記上下方向に対向し、
前記保持部本体の下面から下方に突出するとともに前記中心軸の周囲を囲む環状の突出部が設けられる。 - 請求項1に記載の基板処理装置であって、
前記カップ回転機構が、
前記チャンバ内に配置され、前記カップ部に取り付けられる環状のロータ部と、
前記チャンバ外において前記ロータ部の周囲に配置され、前記ロータ部との間に回転力を発生するステータ部と、
を備える。 - 請求項14に記載の基板処理装置であって、
前記ロータ部が、前記ステータ部との間に働く磁力により、前記チャンバ内において浮遊状態にて回転する。 - 請求項1に記載の基板処理装置であって、
前記チャンバが、前記基板保持部および前記カップ部が配置される密閉空間を形成する密閉空間形成部である。 - 基板を処理する基板処理装置であって、
水平状態で基板を保持する基板保持部と、
前記基板上に処理液を供給する処理液供給部と、
カップ排気ポートが底部に設けられ、前記基板からの処理液を受けるカップ部と、
前記基板保持部および前記カップ部を内部に収容するとともにチャンバ排気ポートが底部に設けられるチャンバと、
上下方向を向く中心軸を中心として前記カップ部を回転するカップ回転機構と、
前記カップ回転機構により前記カップ部を回転させ、前記中心軸を中心とする周方向における前記カップ排気ポートの位置を決定する制御部と、
を備え、
前記カップ排気ポートが前記チャンバ排気ポートに重なる状態では、前記チャンバ排気ポートに接続される排気機構により、前記カップ部内の気体が前記カップ排気ポートおよび前記チャンバ排気ポートを介して前記チャンバ外に排出され、
前記カップ回転機構が前記制御部により制御され、前記カップ排気ポートと前記チャンバ排気ポートとの重複面積が変更されることにより、前記排気機構による前記チャンバからの排気流量が変更される。 - 請求項17に記載の基板処理装置であって、
前記チャンバ排気ポートが、
大チャンバ排気ポートと、
前記大チャンバ排気ポートと共に前記周方向に並び、前記大チャンバ排気ポートよりも面積が小さい小チャンバ排気ポートと、
を備え、
前記カップ排気ポートと前記チャンバ排気ポートとの重複面積の変更が、前記カップ排気ポートを、前記大チャンバ排気ポートまたは前記小チャンバ排気ポートに選択的に重ねることである。 - 請求項18に記載の基板処理装置であって、
前記カップ排気ポートの下端のうち前記小チャンバ排気ポートとの重複領域を除く非重複領域が、前記チャンバの前記底部に近接することにより閉塞される。 - 請求項19に記載の基板処理装置であって、
前記小チャンバ排気ポートが、前記チャンバの前記底部に設けられて上方に突出する底部突出部内に設けられ、
前記底部突出部の上端面が、前記上下方向に垂直であり、
前記カップ排気ポートの前記非重複領域が、前記底部突出部の前記上端面に近接することにより閉塞される。 - 請求項18に記載の基板処理装置であって、
前記カップ排気ポートが前記大チャンバ排気ポートおよび前記小チャンバ排気ポートのうち一方のチャンバ排気ポートに重なる状態から、前記カップ排気ポートと前記一方のチャンバ排気ポートとの重複を維持しつつ前記カップ部を微小角度だけ回転させることにより、前記カップ排気ポートと前記一方のチャンバ排気ポートとの重複面積が変更されて前記排気機構による前記チャンバからの排気流量が微調整される。 - 請求項17に記載の基板処理装置であって、
前記カップ排気ポートが、
大カップ排気ポートと、
前記大カップ排気ポートと共に前記周方向に並び、前記大カップ排気ポートよりも面積が小さい小カップ排気ポートと、
を備え、
前記カップ排気ポートと前記チャンバ排気ポートとの重複面積の変更が、前記大カップ排気ポートまたは前記小カップ排気ポートを、前記チャンバ排気ポートに選択的に重ねることである。 - 請求項22に記載の基板処理装置であって、
前記チャンバ排気ポートの上端のうち前記小カップ排気ポートとの重複領域を除く非重複領域が、前記カップ部の前記底部に近接することにより閉塞される。 - 請求項23に記載の基板処理装置であって、
前記小カップ排気ポートが、前記カップ部の前記底部に設けられて下方に突出する底部突出部内に設けられ、
前記底部突出部の下端面が、前記上下方向に垂直であり、
前記チャンバ排気ポートの前記非重複領域が、前記底部突出部の前記下端面に近接することにより閉塞される。 - 請求項22に記載の基板処理装置であって、
前記大カップ排気ポートおよび前記小カップ排気ポートのうち一方のカップ排気ポートが前記チャンバ排気ポートに重なる状態から、前記一方のカップ排気ポートと前記チャンバ排気ポートとの重複を維持しつつ前記カップ部を微小角度だけ回転させることにより、前記一方のカップ排気ポートと前記チャンバ排気ポートとの重複面積が変更されて前記排気機構による前記チャンバからの排気流量が微調整される。 - 請求項17に記載の基板処理装置であって、
前記カップ排気ポートと前記チャンバ排気ポートとの重複面積の変更が、前記カップ排気ポートと前記チャンバ排気ポートとの重複を維持しつつ前記カップ部を回転させることにより実現される。 - 請求項26に記載の基板処理装置であって、
前記チャンバ排気ポートの上端のうち前記カップ排気ポートとの重複領域を除く非重複領域が、前記カップ部の前記底部に近接することにより閉塞され、
前記カップ排気ポートの下端のうち前記チャンバ排気ポートとの重複領域を除く非重複領域が、前記チャンバの前記底部に近接することにより閉塞される。 - 請求項27に記載の基板処理装置であって、
前記カップ排気ポートが、前記カップ部の前記底部に設けられて下方に突出する底部突出部内に設けられ、
前記底部突出部の下端面が、前記上下方向に垂直であり、
前記チャンバ排気ポートの前記非重複領域が、前記底部突出部の前記下端面に近接することにより閉塞される。 - 請求項27に記載の基板処理装置であって、
前記チャンバ排気ポートが、前記チャンバの前記底部に設けられて上方に突出する他の底部突出部内に設けられ、
前記他の底部突出部の上端面が、前記上下方向に垂直であり、
前記カップ排気ポートの前記非重複領域が、前記他の底部突出部の前記上端面に近接することにより閉塞される。 - 請求項17に記載の基板処理装置であって、
前記カップ排気ポートが、前記チャンバ排気ポートから前記周方向に離間した位置に位置する状態で、前記カップ排気ポートの下端が前記チャンバの前記底部に近接することにより、または、前記チャンバ排気ポートの上端が前記カップ部の前記底部に近接することにより、前記カップ排気ポートを介した前記カップ部内の気体の吸引が停止される。 - 請求項17に記載の基板処理装置であって、
前記カップ回転機構が、
前記チャンバ内に配置され、前記カップ部に取り付けられる環状のロータ部と、
前記チャンバ外において前記ロータ部の周囲に配置され、前記ロータ部との間に回転力を発生するステータ部と、
を備える。 - 請求項31に記載の基板処理装置であって、
前記ロータ部が、前記ステータ部との間に働く磁力により、前記チャンバ内において浮遊状態にて回転する。 - 請求項17に記載の基板処理装置であって、
前記チャンバが、前記基板保持部および前記カップ部が配置される密閉空間を形成する密閉空間形成部である。
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JP2017207622A (ja) * | 2016-05-18 | 2017-11-24 | 株式会社デンソー | ヘッドアップディスプレイ装置及び画像投射ユニット |
KR20230043679A (ko) * | 2021-09-24 | 2023-03-31 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 |
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JP6688112B2 (ja) * | 2016-03-18 | 2020-04-28 | 株式会社Screenホールディングス | 基板処理装置 |
KR102622987B1 (ko) * | 2020-12-10 | 2024-01-11 | 세메스 주식회사 | 기판 처리 장치 및 이에 제공되는 필러 부재 |
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JP2007180379A (ja) * | 2005-12-28 | 2007-07-12 | Ses Co Ltd | 基板処理方法及び基板処理装置 |
JP2010226043A (ja) * | 2009-03-25 | 2010-10-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
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JP2007180379A (ja) * | 2005-12-28 | 2007-07-12 | Ses Co Ltd | 基板処理方法及び基板処理装置 |
JP2010226043A (ja) * | 2009-03-25 | 2010-10-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
Cited By (3)
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JP2017207622A (ja) * | 2016-05-18 | 2017-11-24 | 株式会社デンソー | ヘッドアップディスプレイ装置及び画像投射ユニット |
KR20230043679A (ko) * | 2021-09-24 | 2023-03-31 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 |
KR102651218B1 (ko) | 2021-09-24 | 2024-03-25 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 |
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