JP6629509B2 - 酸化物半導体膜 - Google Patents
酸化物半導体膜 Download PDFInfo
- Publication number
- JP6629509B2 JP6629509B2 JP2015028756A JP2015028756A JP6629509B2 JP 6629509 B2 JP6629509 B2 JP 6629509B2 JP 2015028756 A JP2015028756 A JP 2015028756A JP 2015028756 A JP2015028756 A JP 2015028756A JP 6629509 B2 JP6629509 B2 JP 6629509B2
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- film
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- oxide semiconductor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
- C01G15/006—Compounds containing gallium, indium or thallium, with or without oxygen or hydrogen, and containing two or more other elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/89—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by mass-spectroscopy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electroluminescent Light Sources (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Liquid Crystal (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014032192 | 2014-02-21 | ||
| JP2014032192 | 2014-02-21 | ||
| JP2014098071 | 2014-05-09 | ||
| JP2014098071 | 2014-05-09 | ||
| JP2014122792 | 2014-06-13 | ||
| JP2014122792 | 2014-06-13 | ||
| JP2014131834 | 2014-06-26 | ||
| JP2014131834 | 2014-06-26 | ||
| JP2014218310 | 2014-10-27 | ||
| JP2014218310 | 2014-10-27 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016119874A Division JP6297625B2 (ja) | 2014-02-21 | 2016-06-16 | 半導体装置及び金属酸化物膜 |
| JP2018197248A Division JP2019059664A (ja) | 2014-02-21 | 2018-10-19 | 酸化物半導体膜 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016074580A JP2016074580A (ja) | 2016-05-12 |
| JP2016074580A5 JP2016074580A5 (ja) | 2017-07-20 |
| JP6629509B2 true JP6629509B2 (ja) | 2020-01-15 |
Family
ID=53883017
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015028756A Active JP6629509B2 (ja) | 2014-02-21 | 2015-02-17 | 酸化物半導体膜 |
| JP2016119874A Active JP6297625B2 (ja) | 2014-02-21 | 2016-06-16 | 半導体装置及び金属酸化物膜 |
| JP2018197248A Withdrawn JP2019059664A (ja) | 2014-02-21 | 2018-10-19 | 酸化物半導体膜 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016119874A Active JP6297625B2 (ja) | 2014-02-21 | 2016-06-16 | 半導体装置及び金属酸化物膜 |
| JP2018197248A Withdrawn JP2019059664A (ja) | 2014-02-21 | 2018-10-19 | 酸化物半導体膜 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US9406760B2 (enExample) |
| JP (3) | JP6629509B2 (enExample) |
| KR (3) | KR102173927B1 (enExample) |
| CN (3) | CN118588742A (enExample) |
| TW (2) | TWI675004B (enExample) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118588742A (zh) * | 2014-02-21 | 2024-09-03 | 株式会社半导体能源研究所 | 半导体膜、晶体管、半导体装置、显示装置以及电子设备 |
| KR20150109984A (ko) * | 2014-03-21 | 2015-10-02 | 삼성전자주식회사 | 기체 차단 필름, 이를 포함하는 냉장고 및 기체 차단 필름의 제조방법 |
| US10043913B2 (en) | 2014-04-30 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor device, display device, module, and electronic device |
| CN107210230B (zh) | 2015-02-12 | 2022-02-11 | 株式会社半导体能源研究所 | 氧化物半导体膜及半导体装置 |
| CN107408579B (zh) | 2015-03-03 | 2021-04-02 | 株式会社半导体能源研究所 | 半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置 |
| WO2016139560A1 (en) | 2015-03-03 | 2016-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film, semiconductor device including the oxide semiconductor film, and display device including the semiconductor device |
| US10008609B2 (en) | 2015-03-17 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
| US10002970B2 (en) | 2015-04-30 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method of the same, or display device including the same |
| US10163948B2 (en) * | 2015-07-23 | 2018-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| WO2017037564A1 (en) | 2015-08-28 | 2017-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, transistor, and semiconductor device |
| JP6584879B2 (ja) * | 2015-09-11 | 2019-10-02 | 株式会社東芝 | 半導体装置 |
| WO2017125795A1 (ja) * | 2016-01-22 | 2017-07-27 | 株式会社半導体エネルギー研究所 | トランジスタ、撮像装置 |
| TWI846526B (zh) * | 2016-02-12 | 2024-06-21 | 光程研創股份有限公司 | 光學感測器及光學系統 |
| KR102796428B1 (ko) | 2016-02-12 | 2025-04-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 상기 반도체 장치를 포함하는 표시 장치 |
| US10043917B2 (en) * | 2016-03-03 | 2018-08-07 | United Microelectronics Corp. | Oxide semiconductor device and method of manufacturing the same |
| CN115954389A (zh) | 2016-03-04 | 2023-04-11 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| US10516060B2 (en) | 2016-03-11 | 2019-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Composite and transistor |
| KR20180123028A (ko) | 2016-03-11 | 2018-11-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치 |
| US9581506B1 (en) * | 2016-03-30 | 2017-02-28 | Globalfoundries Singapore Pte. Ltd. | Methods for evaluating strain of crystalline devices |
| US10388738B2 (en) * | 2016-04-01 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and method for manufacturing the same |
| WO2017178912A1 (en) * | 2016-04-13 | 2017-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| KR20170126398A (ko) * | 2016-05-09 | 2017-11-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 상기 반도체 장치를 갖는 표시 장치 |
| WO2017199130A1 (en) * | 2016-05-19 | 2017-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and transistor |
| KR102296809B1 (ko) | 2016-06-03 | 2021-08-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 금속 산화물 및 전계 효과 트랜지스터 |
| WO2017208109A1 (en) | 2016-06-03 | 2017-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, oxide semiconductor, oxynitride semiconductor, and transistor |
| US20170373194A1 (en) * | 2016-06-27 | 2017-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Transistor |
| CN109643735B (zh) * | 2016-09-12 | 2022-12-16 | 株式会社半导体能源研究所 | 显示装置及电子设备 |
| TW202129966A (zh) * | 2016-10-21 | 2021-08-01 | 日商半導體能源研究所股份有限公司 | 複合氧化物及電晶體 |
| US11530134B2 (en) | 2017-03-13 | 2022-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide comprising In and Zn, and transistor |
| US10249695B2 (en) * | 2017-03-24 | 2019-04-02 | Apple Inc. | Displays with silicon and semiconducting-oxide top-gate thin-film transistors |
| CN106876281B (zh) * | 2017-04-27 | 2020-12-08 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板 |
| JP2018206828A (ja) * | 2017-05-31 | 2018-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| KR102393552B1 (ko) * | 2017-11-09 | 2022-05-02 | 엘지디스플레이 주식회사 | 수소 차단막을 갖는 박막 트랜지스터 및 이를 포함하는 표시장치 |
| US11482626B2 (en) | 2018-03-29 | 2022-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| US11552111B2 (en) | 2018-04-20 | 2023-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN108878264B (zh) * | 2018-06-29 | 2020-12-25 | 云南大学 | 一种金属氧化物叠层场效应材料的制备方法 |
| KR102598375B1 (ko) * | 2018-08-01 | 2023-11-06 | 이데미쓰 고산 가부시키가이샤 | 결정 구조 화합물, 산화물 소결체, 스퍼터링 타깃, 결정질 산화물 박막, 아모르퍼스 산화물 박막, 박막 트랜지스터, 및 전자 기기 |
| KR20210057828A (ko) * | 2018-10-09 | 2021-05-21 | 마이크론 테크놀로지, 인크 | 디바이스를 형성하는 방법, 및 관련 디바이스 및 전자 시스템 |
| JP2020092222A (ja) * | 2018-12-07 | 2020-06-11 | 日新電機株式会社 | 薄膜トランジスタ及びその製造方法 |
| JP7147953B2 (ja) * | 2019-02-25 | 2022-10-05 | 株式会社ニコン | 半導体装置、ｐＨセンサ及びバイオセンサ並びに半導体装置の製造方法 |
| KR20210134695A (ko) | 2019-03-01 | 2021-11-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN113508468A (zh) | 2019-03-01 | 2021-10-15 | 株式会社半导体能源研究所 | 半导体装置 |
| US12068198B2 (en) * | 2019-05-10 | 2024-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US11088078B2 (en) | 2019-05-22 | 2021-08-10 | Nanya Technology Corporation | Semiconductor device and method for manufacturing the same |
| US20220344457A1 (en) * | 2019-09-20 | 2022-10-27 | National Research Council Of Canada | Enhancement-mode high electron mobility transistors with small fin isolation features |
| DE102020127090A1 (de) * | 2020-02-27 | 2021-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mehrfinnenlayout, verfahren, system und bauelement |
| WO2021207216A1 (en) * | 2020-04-07 | 2021-10-14 | University Of Florida Research Foundation | M/tio 2 catalysts and methods of use |
| CN113838938A (zh) * | 2020-06-24 | 2021-12-24 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板以及电子装置 |
| CN113838801B (zh) * | 2020-06-24 | 2024-10-22 | 京东方科技集团股份有限公司 | 半导体基板的制造方法和半导体基板 |
| US11929436B2 (en) | 2021-02-02 | 2024-03-12 | Taiwan Semiconductor Manufacturing Company Limited | Thin transistor including a hydrogen-blocking dielectric barrier and methods for forming the same |
| US12224352B2 (en) * | 2021-04-22 | 2025-02-11 | Taiwan Semiconductor Manufacturing Company Limited | Transistor including an active region and methods for forming the same |
| CN114355311B (zh) * | 2022-03-10 | 2022-08-12 | 成都飞机工业（集团）有限责任公司 | 一种翼面前缘吸波结构rcs测试的低散射载体及测试方法 |
| CN115881574B (zh) * | 2023-03-08 | 2023-05-05 | 广东仁懋电子有限公司 | 提升碳化硅mos管制备效果的方法、系统、设备及介质 |
| WO2025017895A1 (ja) * | 2023-07-20 | 2025-01-23 | シャープディスプレイテクノロジー株式会社 | 回路基板およびそれを備える表示装置 |
| CN118337200B (zh) * | 2024-06-12 | 2025-01-17 | 惠科股份有限公司 | 解复用电路、解复用电路结构以及制作方法、显示面板 |
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| JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
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| JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
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2015
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| US20170141233A1 (en) | 2017-05-18 |
| KR20190143431A (ko) | 2019-12-30 |
| TWI702187B (zh) | 2020-08-21 |
| JP2016189479A (ja) | 2016-11-04 |
| CN104867981A (zh) | 2015-08-26 |
| US20150243738A1 (en) | 2015-08-27 |
| JP6297625B2 (ja) | 2018-03-20 |
| JP2016074580A (ja) | 2016-05-12 |
| CN104867981B (zh) | 2020-04-21 |
| CN111524967A (zh) | 2020-08-11 |
| TW201544458A (zh) | 2015-12-01 |
| CN118588742A (zh) | 2024-09-03 |
| KR20150099467A (ko) | 2015-08-31 |
| KR102293972B1 (ko) | 2021-08-27 |
| US9406760B2 (en) | 2016-08-02 |
| US9559174B2 (en) | 2017-01-31 |
| KR102171571B1 (ko) | 2020-10-29 |
| KR20200125572A (ko) | 2020-11-04 |
| US20160197193A1 (en) | 2016-07-07 |
| US10032928B2 (en) | 2018-07-24 |
| TWI675004B (zh) | 2019-10-21 |
| CN111524967B (zh) | 2024-07-12 |
| KR102173927B1 (ko) | 2020-11-05 |
| TW202003388A (zh) | 2020-01-16 |
| JP2019059664A (ja) | 2019-04-18 |
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