JP6618952B2 - 発光半導体チップの製造方法 - Google Patents
発光半導体チップの製造方法 Download PDFInfo
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- JP6618952B2 JP6618952B2 JP2017095646A JP2017095646A JP6618952B2 JP 6618952 B2 JP6618952 B2 JP 6618952B2 JP 2017095646 A JP2017095646 A JP 2017095646A JP 2017095646 A JP2017095646 A JP 2017095646A JP 6618952 B2 JP6618952 B2 JP 6618952B2
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- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
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- Semiconductor Lasers (AREA)
Description
2 第2の半導体層
3 第3の層
4 コンタクト層
5 パッシベーション層
6 基板
7 温度分布パターン部
8,9 保護層
10 半導体材料
11,12,13,14,15,16 領域
21 リッジ導波構造
61 表面
62 マーク
70 温度分布パターン要素
100 半導体チップ
101 レーザダイオードチップ
102 波長変換要素
200 支持体
201 回転方向
300 光ビーム
301 複数の光源
400 光偏向装置
500 検出器
1000,2000,3000 方法のステップ
Claims (15)
- 光生成のための活性層の少なくとも一部である第1の半導体層(1)を備えた発光半導体チップ(100)の製造方法であって、
前記第1の半導体層(1)は、少なくとも1つの延在方向において材料組成の横方向の変化を有し、
前記第1の半導体層(1)を成長させる成長プロセス中に、当該第1の半導体層(1)の材料組成の横方向の変化が生じるように、当該成長中の第1の半導体層(1)の少なくとも1つの延在方向において不均一な横方向温度分布を生じさせ、
前記第1の半導体層(1)を成長基板上にウェハ複合体で成長させ、
局所的に変化する光照射(300)によって、前記不均一な横方向温度分布の少なくとも一部を規定通りに生じさせ、
前記不均一な横方向温度分布を制御するための前記光照射(300)を、温度計に、および/または、ウェハ曲率測定のための測定機器に結合し、
曲率測定および/または空間分解方式の温度測定に基づく曲率データを用いて、前記不均一な横方向温度分布のプロフィールを均一化するように、前記成長基板に入射する光パワーを局所的に調整し、
所望の前記不均一な横方向温度分布を前記成長基板上に生じさせるように、均一化された前記プロフィールに規定通りに変調を施す
ことを特徴とする製造方法。 - 前記成長基板上に、位置合わせマークまたはトリガマークの形態のマークが設けられる、請求項1記載の製造方法。
- 前記マークを前記成長プロセス中に前記光照射の段階で検出して、前記プロフィールを前記マークに位置合わせする、請求項2記載の製造方法。
- 局所的に変化する前記光照射は、レーザを用いた照射を含む、
請求項1から3までのいずれか1項記載の製造方法。 - 前記光照射の際、光偏向装置によって、光を規定通りに所定の領域へ偏向する、
請求項4記載の製造方法。 - 前記第1の半導体層を成長させる面の走査を行う、
請求項5記載の製造方法。 - 1つのレーザビームを使用する、
請求項4から6までのいずれか1項記載の製造方法。 - 同期してまたは互いに依存せずに駆動制御可能な複数のレーザ光源を、局所的に変化する前記光照射の生成のために使用し、前記複数のレーザ光源は駆動制御に応じて、複数の領域に照射して局所的に加熱することができる、
請求項4から6までのいずれか1項記載の製造方法。 - 前記成長中の第1の半導体層(1)の温度を局所的に上昇または低下させる少なくとも1つの温度分布パターン要素(70)を有する温度分布パターン部(7)によって、前記不均一な横方向温度分布の少なくとも一部を規定通りに生じさせる、
請求項1から8までのいずれか1項記載の製造方法。 - 前記第1の半導体層(1)を一定の厚さで成長させる、
請求項1から9までのいずれか1項記載の製造方法。 - 前記第1の半導体層(1)が、少なくとも1つの第1の領域(11)と、横方向において当該第1の領域(11)の隣の少なくとも1つの第2の領域(12)とを有し、
前記第1の領域(11)と前記第2の領域(12)とが同一の材料系を有し、かつ
前記第1の領域(11)の材料組成が前記第2の領域(12)の材料組成と異なる
ように、前記第1の半導体層(1)を作製する、
請求項1から10までのいずれか1項記載の製造方法。 - 前記第1の半導体層(1)は、光生成のための活性層の少なくとも一部であり、
前記少なくとも1つの第1の領域(11)の材料組成と、横方向において当該少なくとも1つの第1の領域(11)の隣の前記少なくとも1つの第2の領域(12)の材料組成とが異なることにより、前記発光半導体チップ(100)は動作中に、複数の異なる波長の光を放射する、
請求項11記載の製造方法。 - 前記第1の半導体層(1)はInAlGaN材料系をベースとしており、
前記材料組成の横方向の変化のためにIn含有率が変化する、
請求項1から12までのいずれか1項記載の製造方法。 - 前記材料組成の横方向の変化は、少なくとも部分的に階段状の推移を有する、
請求項1から13までのいずれか1項記載の製造方法。 - 前記材料組成の横方向の変化は、少なくとも部分的に連続的な推移を有する、
請求項1から14までのいずれか1項記載の製造方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017208543A (ja) * | 2016-05-13 | 2017-11-24 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 半導体チップの製造方法、および半導体チップ |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017109812A1 (de) | 2016-05-13 | 2017-11-16 | Osram Opto Semiconductors Gmbh | Licht emittierender Halbleiterchip und Verfahren zur Herstellung eines Licht emittierenden Halbleiterchips |
DE102017108949B4 (de) | 2016-05-13 | 2021-08-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip |
DE102017121480B4 (de) * | 2017-09-15 | 2024-04-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Lichtemittierendes Halbleiterbauteil |
DE102017130594A1 (de) * | 2017-12-19 | 2019-06-19 | Osram Opto Semiconductors Gmbh | Halbleiterlaser, betriebsverfahren für einen halbleiterlaser und methode zur bestimmung des optimalen füllfaktors eines halbleiterlasers |
JP7098937B2 (ja) * | 2018-01-16 | 2022-07-12 | セイコーエプソン株式会社 | 照明装置およびプロジェクター |
CN108400211B (zh) * | 2018-02-12 | 2021-03-26 | 厦门三安光电有限公司 | 一种具有多种波长的发光二极管 |
JP7232239B2 (ja) * | 2018-02-26 | 2023-03-02 | パナソニックホールディングス株式会社 | 半導体発光装置 |
US11398715B2 (en) * | 2018-02-26 | 2022-07-26 | Panasonic Holdings Corporation | Semiconductor light emitting device |
DE102018127977A1 (de) * | 2018-11-08 | 2020-05-14 | Osram Opto Semiconductors Gmbh | Diodenlaser und verfahren zum betreiben eines diodenlasers |
CN109830575B (zh) * | 2019-01-09 | 2021-06-04 | 武汉光迅科技股份有限公司 | 一种超辐射发光二极管外延片、外延片制备方法及芯片 |
DE112019006646B4 (de) * | 2019-01-10 | 2024-04-18 | Mitsubishi Electric Corporation | Halbleiter-Laservorrichtung |
US11757254B2 (en) * | 2020-01-14 | 2023-09-12 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device |
DE102021123010A1 (de) | 2021-06-11 | 2022-12-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelement mit verbesserten eigenschaften bezüglich wellenlängenaufweitung |
DE102021123015A1 (de) | 2021-06-11 | 2022-12-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip und bauelement |
DE112022001151A5 (de) * | 2021-06-11 | 2023-12-07 | Ams-Osram International Gmbh | Bauelement mit verbesserten eigenschaften bezüglich wellenlängenaufweitung |
US20240275127A1 (en) * | 2021-06-11 | 2024-08-15 | Ams-Osram International Gmbh | Semiconductor chip and component |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5992522A (ja) | 1982-11-18 | 1984-05-28 | Nec Corp | 結晶成長法 |
US4654090A (en) | 1985-09-13 | 1987-03-31 | Xerox Corporation | Selective disordering of well structures by laser annealing |
JPS62145888A (ja) | 1985-12-20 | 1987-06-29 | Seiko Epson Corp | 半導体レ−ザ及びその製造方法 |
JPS63188940A (ja) | 1987-01-30 | 1988-08-04 | Nikon Corp | 光加熱装置 |
JPH0821756B2 (ja) | 1986-10-31 | 1996-03-04 | セイコーエプソン株式会社 | 半導体レーザの製造方法 |
JPS63227089A (ja) * | 1987-03-17 | 1988-09-21 | Matsushita Electric Ind Co Ltd | 多波長半導体レ−ザの製造方法 |
JPS63311787A (ja) * | 1987-06-15 | 1988-12-20 | Seiko Epson Corp | 多波長集積化半導体レ−ザ |
US4855255A (en) | 1988-03-23 | 1989-08-08 | Massachusetts Institute Of Technology | Tapered laser or waveguide optoelectronic method |
US5436192A (en) | 1989-03-24 | 1995-07-25 | Xerox Corporation | Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth |
JPH0828498B2 (ja) | 1989-10-02 | 1996-03-21 | 株式会社東芝 | 半導体素子とその製造方法 |
JP3090339B2 (ja) | 1990-03-19 | 2000-09-18 | 株式会社東芝 | 気相成長装置および方法 |
JP2687668B2 (ja) | 1990-04-17 | 1997-12-08 | 日本電気株式会社 | 高出力半導体レーザ素子及びその製造方法 |
JPH05190977A (ja) | 1992-01-18 | 1993-07-30 | Seiko Epson Corp | 半導体レーザ |
JP3019174B2 (ja) * | 1992-06-10 | 2000-03-13 | 日本電信電話株式会社 | 多波長レーザの製造方法 |
JPH06124901A (ja) | 1992-10-09 | 1994-05-06 | Furukawa Electric Co Ltd:The | 化合物半導体薄膜の製造方法 |
JPH07221027A (ja) | 1994-01-28 | 1995-08-18 | Matsushita Electric Works Ltd | 半導体装置の製造方法 |
JP3115775B2 (ja) | 1994-11-16 | 2000-12-11 | 三菱電機株式会社 | 半導体レーザの製造方法 |
JP3755090B2 (ja) | 1995-06-14 | 2006-03-15 | 三菱電機株式会社 | 半導体装置の製造方法,及び半導体装置 |
JPH09283858A (ja) | 1996-04-12 | 1997-10-31 | Canon Inc | 化合物半導体光デバイスの製造方法及び装置 |
JPH1197371A (ja) | 1997-09-18 | 1999-04-09 | Tokyo Electron Ltd | 熱処理装置 |
JPH11330548A (ja) * | 1998-05-15 | 1999-11-30 | Showa Denko Kk | Iii−v族窒化物半導体発光素子及びその製造方法 |
JP2000031595A (ja) | 1998-07-10 | 2000-01-28 | Nec Corp | 光半導体素子、光半導体素子の製造方法及びその製造装置 |
US6559036B1 (en) | 1998-08-07 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP2000100728A (ja) | 1998-09-18 | 2000-04-07 | Hitachi Ltd | 結晶成長装置 |
US6771895B2 (en) | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
DE19907497C2 (de) | 1999-02-22 | 2003-05-28 | Steag Hamatech Ag | Vorrichtung und Verfahren zur Wärmebehandlung von Substraten |
JP2001085742A (ja) | 1999-09-17 | 2001-03-30 | Toshiba Corp | 半導体発光素子及び半導体発光素子の製造方法 |
JP4312344B2 (ja) | 2000-03-22 | 2009-08-12 | 日本碍子株式会社 | エピタキシャル成長用基板およびその製造方法 |
JP2002231628A (ja) | 2001-02-01 | 2002-08-16 | Sony Corp | 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 |
JP2003008143A (ja) | 2001-06-18 | 2003-01-10 | Sony Corp | マルチビーム半導体レーザ素子 |
JP2003086890A (ja) | 2001-09-11 | 2003-03-20 | Oki Electric Ind Co Ltd | 半導体発光素子の製造方法 |
JP4233801B2 (ja) | 2002-04-08 | 2009-03-04 | 士郎 酒井 | InGaN系化合物半導体発光装置の製造方法 |
JP4309106B2 (ja) | 2002-08-21 | 2009-08-05 | 士郎 酒井 | InGaN系化合物半導体発光装置の製造方法 |
US7470602B2 (en) | 2002-10-29 | 2008-12-30 | Sumitomo Heavy Industries, Ltd. | Crystalline film and its manufacture method using laser |
JP4211939B2 (ja) | 2002-10-29 | 2009-01-21 | 住友重機械工業株式会社 | レーザを用いた多結晶膜の製造方法 |
JP2004288723A (ja) | 2003-03-19 | 2004-10-14 | Seiko Epson Corp | 半導体レーザー、半導体レーザーアレイ、および半導体レーザーの製造方法 |
US20060027169A1 (en) | 2004-08-06 | 2006-02-09 | Tokyo Electron Limited | Method and system for substrate temperature profile control |
US7812366B1 (en) | 2005-03-18 | 2010-10-12 | The United States Of America As Represented By The Secretary Of The Army | Ultraviolet light emitting AlGaN composition, and ultraviolet light emitting device containing same |
US7642205B2 (en) | 2005-04-08 | 2010-01-05 | Mattson Technology, Inc. | Rapid thermal processing using energy transfer layers |
JP2008189492A (ja) | 2007-02-02 | 2008-08-21 | Japan Aerospace Exploration Agency | 光学素子およびこれに用いられるチタン系酸化物ガラス、並びにチタン系酸化物ガラスを用いた発光方法および光増幅方法 |
JP5051900B2 (ja) * | 2008-01-21 | 2012-10-17 | 日本アビオニクス株式会社 | 半導体レーザ溶着装置 |
JP2010040752A (ja) | 2008-08-05 | 2010-02-18 | Sanyo Electric Co Ltd | 半導体レーザ装置およびその製造方法 |
JP5403212B2 (ja) | 2008-10-06 | 2014-01-29 | 株式会社Ihi | 白色ledの製造装置と方法 |
US9829780B2 (en) * | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
KR20110011775A (ko) | 2009-07-29 | 2011-02-09 | 윤재명 | 복수의 발광 반도체 칩을 포함하는 발광 장치의 제조 방법 |
KR20120052287A (ko) | 2009-08-06 | 2012-05-23 | 스미토모덴키고교가부시키가이샤 | 성막 장치 |
JP5423294B2 (ja) * | 2009-09-30 | 2014-02-19 | 住友電気工業株式会社 | 窒化物半導体発光素子 |
JP2011210885A (ja) * | 2010-03-29 | 2011-10-20 | Panasonic Corp | 半導体レーザアレイ及び半導体レーザアレイの製造方法 |
JP2012059963A (ja) | 2010-09-09 | 2012-03-22 | Furukawa Electric Co Ltd:The | 半導体光集積素子の製造方法 |
KR101769845B1 (ko) | 2011-02-10 | 2017-08-21 | 삼성전자주식회사 | 기기 간의 컨텐츠 공유 방법 및 장치 |
US8787418B2 (en) | 2011-08-11 | 2014-07-22 | Sensor Electronic Technology, Inc. | Emitting device with compositional and doping inhomogeneities in semiconductor layers |
JP5888133B2 (ja) | 2012-06-08 | 2016-03-16 | 豊田合成株式会社 | 半導体発光素子、発光装置 |
FR3001334B1 (fr) * | 2013-01-24 | 2016-05-06 | Centre Nat De La Rech Scient (Cnrs) | Procede de fabrication de diodes blanches monolithiques |
CN103190968B (zh) * | 2013-03-18 | 2015-06-17 | 杭州启明医疗器械有限公司 | 一种支架以及具有该支架的安装稳固的人造瓣膜置换装置 |
DE102017109812A1 (de) | 2016-05-13 | 2017-11-16 | Osram Opto Semiconductors Gmbh | Licht emittierender Halbleiterchip und Verfahren zur Herstellung eines Licht emittierenden Halbleiterchips |
DE102017108949B4 (de) | 2016-05-13 | 2021-08-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip |
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JP2017208543A (ja) * | 2016-05-13 | 2017-11-24 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 半導体チップの製造方法、および半導体チップ |
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