JP2017208543A - 半導体チップの製造方法、および半導体チップ - Google Patents
半導体チップの製造方法、および半導体チップ Download PDFInfo
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- JP2017208543A JP2017208543A JP2017095643A JP2017095643A JP2017208543A JP 2017208543 A JP2017208543 A JP 2017208543A JP 2017095643 A JP2017095643 A JP 2017095643A JP 2017095643 A JP2017095643 A JP 2017095643A JP 2017208543 A JP2017208543 A JP 2017208543A
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Abstract
Description
2 第2の半導体層
3 第3の層
4 コンタクト層
5 パッシベーション層
6 基板
7 温度分布パターン部
8,9 保護層
10 半導体材料
11,12,13,14 領域
21 リッジ導波構造
61 表面
62 マーク
70 温度分布パターン要素
100 半導体チップ
200 支持体
201 回転方向
300 光ビーム
301 複数の光源
400 光偏向装置
500 検出器
1000,2000,3000 方法のステップ
Claims (20)
- 半導体チップ(100)の製造方法であって、
第1の半導体層(1)を成長させる成長プロセス中に、当該第1の半導体層(1)の材料組成の横方向の変化が生じるように、当該成長中の第1の半導体層(1)の少なくとも1つの延在方向において不均一な横方向温度分布を生じさせる
ことを特徴とする製造方法。 - 局所的に変化する光照射(300)によって、前記不均一な横方向温度分布の少なくとも一部を規定通りに生じさせる、
請求項1記載の製造方法。 - 前記光照射(300)は、レーザによる照射を含む、
請求項2記載の製造方法。 - 光偏向装置(400)によって、および/または、互いに依存せずに駆動制御可能な複数の光源(301)によって、前記不均一な横方向温度分布を生じさせるように前記光照射(300)を局所的に変化させる、
請求項2または3記載の製造方法。 - 前記成長中の第1の半導体層(1)の温度を局所的に上昇または低下させる少なくとも1つの温度分布パターン要素(70)を有する温度分布パターン部(7)によって、前記不均一な横方向温度分布の少なくとも一部を規定通りに生じさせる、
請求項1から4までのいずれか1項記載の製造方法。 - 前記第1の半導体層(1)を成長基板(6)上に成長させ、
前記成長基板(6)の、前記第1の半導体層(1)とは反対側の面に、前記温度分布パターン部(7)を配置する、
請求項5記載の製造方法。 - 前記第1の半導体層(1)を成長基板(6)上に成長させ、
前記成長基板(6)の前記第1の半導体層(1)側の面に、前記温度分布パターン部(7)を配置する、
請求項5または6記載の製造方法。 - 前記温度分布パターン部(7)を前記成長基板(6)に直接接触させて配置する、
請求項5から7までのいずれか1項記載の製造方法。 - 前記温度分布パターン部(7)を前記成長基板(6)側から保護層(8,9)によって覆い、および/または、前記温度分布パターン部(7)と前記成長基板(6)との間に保護層(8)を配置する、
請求項5から8までのいずれか1項記載の製造方法。 - 前記温度分布パターン部(7)を保護層(8,9)に埋め込む、
請求項5から9までのいずれか1項記載の製造方法。 - 前記温度分布パターン部(7)を半導体層および/または成長基板(6)に埋め込む、
請求項5から10までのいずれか1項記載の製造方法。 - 前記温度分布パターン部(7)は、完成後の前記半導体チップ(100)に残る、
請求項5から11までのいずれか1項記載の製造方法。 - 前記温度分布パターン要素(70)は、電磁波を吸収する材料を有する、
請求項5から12までのいずれか1項記載の製造方法。 - 前記温度分布パターン要素(70)は、成長基板(6)に隆起部および/または陥入部を有する、
請求項5から13までのいずれか1項記載の製造方法。 - 前記温度分布パターン要素(70)は成長基板(6)に陥入部を有し、
前記陥入部内に、前記成長基板(6)の熱伝導率より低い熱伝導率を有する遮熱材料が配置されている、
請求項5から14までのいずれか1項記載の製造方法。 - 前記温度分布パターン要素(70)は、成長基板(6)に隆起部を有し、
前記隆起部は、前記成長基板(6)が配置された支持体(200)との熱的結合を局所的に変化させる、
請求項5から15までのいずれか1項記載の製造方法。 - 前記第1の半導体層(1)は、導波層および/または活性層の少なくとも一部である、
請求項1から16までのいずれか1項記載の製造方法。 - 前記第1の半導体層(1)上に、少なくとも1つの第2の半導体層(2)を成長させ、
前記第2の半導体層(2)にリッジ導波路(21)を形成する、
請求項1から17までのいずれか1項記載の製造方法。 - 前記第1の半導体層(1)は、複数の半導体層を有する半導体積層体の一部である、
請求項1から18までのいずれか1項記載の製造方法。 - 請求項1から19までのいずれか1項記載の製造方法により製造された半導体チップ(100)であって、
前記半導体チップ(100)は、少なくとも1つの延在方向において成長プロセス中に横方向に変化する温度分布により生じた、材料組成の横方向の変化を示す第1の半導体層(1)を有する
ことを特徴とする半導体チップ(100)。
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US10396106B2 (en) | 2019-08-27 |
CN107394581A (zh) | 2017-11-24 |
JP6676578B2 (ja) | 2020-04-08 |
CN113991426A (zh) | 2022-01-28 |
US20190355768A1 (en) | 2019-11-21 |
DE102017109809B4 (de) | 2024-01-18 |
DE102017109809A1 (de) | 2017-11-16 |
US20170330757A1 (en) | 2017-11-16 |
US11004876B2 (en) | 2021-05-11 |
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