JP2016526785A - キャリアを有する発光アセンブリ - Google Patents
キャリアを有する発光アセンブリ Download PDFInfo
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- JP2016526785A JP2016526785A JP2016520356A JP2016520356A JP2016526785A JP 2016526785 A JP2016526785 A JP 2016526785A JP 2016520356 A JP2016520356 A JP 2016520356A JP 2016520356 A JP2016520356 A JP 2016520356A JP 2016526785 A JP2016526785 A JP 2016526785A
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- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 41
- 239000004020 conductor Substances 0.000 claims description 48
- 238000000429 assembly Methods 0.000 claims description 33
- 230000000712 assembly Effects 0.000 claims description 33
- 239000013067 intermediate product Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000002310 reflectometry Methods 0.000 claims description 6
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 12
- 238000001228 spectrum Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 9
- 238000001465 metallisation Methods 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 Ta 2 O 5 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910003438 thallium oxide Inorganic materials 0.000 description 1
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Abstract
Description
2 キャリア
3 コア
4 ゾーン層
5 第1の接触層
6 第2の接触層
7 絶縁層
8 ミラー層
9 第1の端部領域
10 第2の端部領域
11 第1のマスク層
12 開口部
13 第2のミラー層
14 接触層
15 第2の開口部
16 第1のミラー層
17 第2のマスク層
18 第3の開口部
19 第1の部分層
20 第2の部分層
21 第3の部分層
22 接触層
23 接触層
24 スルーコンタクト
25 アレイ
26 第1の行
27 第2の行
28 第3の行
30 アセンブリ
31 第1の領域
32 第2の領域
33 第3の領域
34 帯状導体
35 絶縁層
36 さらなる層
37 メタライゼーション
40 第4の開口部
41 第1の列
42 第2の列
43 第3の列
44 成長基板
45 マスク層
46 さらなる開口部
Claims (19)
- キャリア(2)を有するアセンブリ(30)であって、
コア(3)を有する構造体(1)が前記キャリア(2)上に形成され、前記コア(3)は、2つの端部領域(9,10)を有する長手方向に延在する範囲を有し、
第1の端部領域(9)が前記キャリア(2)に対向して配置され、第2の端部領域(10)が前記キャリア(2)とは反対側に配置され、
前記コア(3)は、少なくとも外側領域において導電性であるように形成され、
前記外側領域は、活性ゾーン層(4)によって少なくとも部分的に被覆され、
前記活性ゾーン層(4)は、電磁放射を発生させるように設計され、
ミラー層(8;13;16)が、電磁放射を或る1つの方向に反射するために、前記コア(3)の少なくとも一方の端部領域(9,10)内に設けられ、
前記コア(3)の導電領域に接触している第1の電気接触層(5)が設けられ、
前記活性ゾーン層(4)に接触する第2の接触層(6)が設けられているアセンブリ(30)。 - 絶縁層(7)が前記活性ゾーン層(4)および前記第1の電気接触層(5)の間、ならびに/または、前記第1の接触層(5)および前記第2の接触層(6)の間に設けられている、請求項1に記載のアセンブリ。
- 前記ミラー層(8)は、前記コア(3)の前記キャリアに対向している第1の端部領域(9)上に設けられ、かつ/または、前記ミラー層(8)は、前記コア(3)の前記キャリア(2)とは反対側の前記第2の端部領域(10)上に設けられ、前記電磁放射の前記反射の前記方向は、前記コア(3)の長手方向に沿っている、請求項1または2に記載のアセンブリ。
- 前記ミラー層(8)は、前記コアに直接設けられているか、または、前記コア(3)の前記第2の端部領域(10)を被覆する前記活性ゾーン層(4)に設けられている、請求項3に記載のアセンブリ。
- 前記ミラー層(8,16)は、導電性であるように設計され、好ましくは、前記コア(3)の電気的接触のための接触層に相当する、請求項1〜4のいずれか一項に記載のアセンブリ。
- 前記ミラー層は、前記コア(3)の第1の端部領域(9)上に配置された導電性の第1のミラー層(16)を有し、前記第1の接触層(5)は、前記第1のミラー層(16)に設けられている、請求項1〜4のいずれか一項に記載のアセンブリ。
- 第2のミラー層(13)が前記第1の接触層(5)に設けられ、前記第2のミラー層(13)は、電気絶縁性であるように設計され、特に前記第1のミラー層の反射率は、前記第2のミラー層の反射率よりも低い、請求項6に記載のアセンブリ。
- 電気スルーコンタクト(24)が前記キャリア(2)内に設けられ、前記スルーコンタクト(24)は、前記第1の接触層(5)に電気接続している、請求項1〜7のいずれか一項に記載のアセンブリ。
- 前記第1の接触層(5)は、前記活性ゾーン層(4)の前記コア(3)に隣接する第1の部分層(19)と接触している、請求項1〜8のいずれか一項に記載のアセンブリ。
- 前記活性ゾーン層(4)は、ジャケットの形態で前記コア(3)を長手方向に包囲している、請求項1〜9のいずれか一項に記載のアセンブリ。
- 前記第2の接触層(6;22)は、前記活性ゾーン層(4)に横方向において接触している、請求項1〜10のいずれか一項に記載のアセンブリ。
- 前記ミラー層(13,15)は、積層体の形態で形成されている、請求項1〜11のいずれか一項に記載のアセンブリ。
- 請求項1〜12のいずれか一項に記載のアセンブリ(30)を複数有するアレイ(25)であって、少なくとも2つのアセンブリ(30)の前記第1のおよび/または第2の接触層(5,6)は、互いに独立して形成され、前記2つのアセンブリは、互いに別個にかつ独立して電流が供給されることができ、電磁放射を発生させることができる、アレイ(25)。
- 複数のアセンブリ(30)の前記第1のおよび/または前記第2の接触層(5,6;22)は、帯状導体(34,37)の形態で形成され、互いに分離している複数の帯状導体(34,37)が設けられている、請求項13に記載のアレイ。
- 前記帯状導体(34,37)は、さまざまな高さに重ねて配置されている、請求項14に記載のアレイ。
- 請求項1〜12のいずれか一項に記載のアセンブリの製造方法。
- 最初に中間製品を成長基板上に製造し、前記中間製品は、少なくとも前記コアを備え、前記中間製品を前記成長基板から剥離してキャリアに設け、前記アセンブリを完成させる、請求項16に記載の製造方法。
- 前記中間製品は、前記コアおよび前記活性ゾーン層を有する、請求項17に記載の製造方法。
- 前記キャリアは、マスク層を有し、前記マスク層は、開口部を有し、ミラー層および/または第1の接触層を前記開口部内に設け、前記中間製品は、第1の端部領域によって前記開口部内に挿入されて前記キャリアに固定される、請求項17または18に記載の製造方法。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009542560A (ja) * | 2006-03-10 | 2009-12-03 | エステイーシー.ユーエヌエム | III族窒化物半導体基板材料及びデバイスにおけるGaNナノワイヤーのパルス状成長及び応用 |
JP2013110160A (ja) * | 2011-11-17 | 2013-06-06 | Fujitsu Ltd | 半導体ナノデバイス |
WO2013083438A1 (de) * | 2011-12-07 | 2013-06-13 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip |
WO2013128540A1 (ja) * | 2012-02-27 | 2013-09-06 | 富士通株式会社 | 半導体レーザ |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321910A (ja) | 1997-05-16 | 1998-12-04 | Ricoh Co Ltd | 半導体発光素子 |
US7968359B2 (en) * | 2006-03-10 | 2011-06-28 | Stc.Unm | Thin-walled structures |
TWI340481B (en) | 2007-06-11 | 2011-04-11 | Univ Nat Chiao Tung | The method for promoting light emission efficiency of led using nano-rod structure |
KR100904588B1 (ko) | 2007-07-05 | 2009-06-25 | 삼성전자주식회사 | 코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자 |
KR100972842B1 (ko) | 2007-09-11 | 2010-07-28 | 포항공과대학교 산학협력단 | 나노막대를 포함하는 나노디바이스 및 그 제조 방법 |
JP5836122B2 (ja) | 2008-07-07 | 2015-12-24 | グロ アーベーGlo Ab | ナノ構造のled |
US20110140072A1 (en) * | 2008-08-21 | 2011-06-16 | Nanocrystal Corporation | Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques |
SE533531C2 (sv) | 2008-12-19 | 2010-10-19 | Glo Ab | Nanostrukturerad anordning |
KR101061150B1 (ko) | 2009-05-22 | 2011-08-31 | 서울대학교산학협력단 | 발광 디바이스와 이의 제조 방법 |
JP5943339B2 (ja) | 2009-12-01 | 2016-07-05 | 国立大学法人北海道大学 | 発光素子およびその製造方法 |
JP2012238835A (ja) | 2011-04-28 | 2012-12-06 | Toshiba Corp | 半導体発光素子、ウェーハ及び半導体発光素子の製造方法 |
EP2618388B1 (en) * | 2012-01-20 | 2019-10-02 | OSRAM Opto Semiconductors GmbH | Light-emitting diode chip |
KR101891777B1 (ko) * | 2012-06-25 | 2018-08-24 | 삼성전자주식회사 | 유전체 리플렉터를 구비한 발광소자 및 그 제조방법 |
DE102012109460B4 (de) | 2012-10-04 | 2024-03-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display |
DE102012109594A1 (de) | 2012-10-09 | 2014-04-10 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
KR101603207B1 (ko) * | 2013-01-29 | 2016-03-14 | 삼성전자주식회사 | 나노구조 반도체 발광소자 제조방법 |
-
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009542560A (ja) * | 2006-03-10 | 2009-12-03 | エステイーシー.ユーエヌエム | III族窒化物半導体基板材料及びデバイスにおけるGaNナノワイヤーのパルス状成長及び応用 |
JP2013110160A (ja) * | 2011-11-17 | 2013-06-06 | Fujitsu Ltd | 半導体ナノデバイス |
WO2013083438A1 (de) * | 2011-12-07 | 2013-06-13 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip |
WO2013128540A1 (ja) * | 2012-02-27 | 2013-09-06 | 富士通株式会社 | 半導体レーザ |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7378686B2 (ja) | 2021-08-31 | 2023-11-13 | シチズン電子株式会社 | Led発光装置 |
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