JP6184586B2 - 活性ゾーンを有する半導体積層体を円柱状構造上に備えた発光アセンブリ - Google Patents
活性ゾーンを有する半導体積層体を円柱状構造上に備えた発光アセンブリ Download PDFInfo
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- JP6184586B2 JP6184586B2 JP2016509405A JP2016509405A JP6184586B2 JP 6184586 B2 JP6184586 B2 JP 6184586B2 JP 2016509405 A JP2016509405 A JP 2016509405A JP 2016509405 A JP2016509405 A JP 2016509405A JP 6184586 B2 JP6184586 B2 JP 6184586B2
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- 239000004065 semiconductor Substances 0.000 title claims description 37
- 230000005670 electromagnetic radiation Effects 0.000 claims description 37
- 230000007423 decrease Effects 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 33
- 229910052738 indium Inorganic materials 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 31
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 30
- 230000000712 assembly Effects 0.000 claims description 26
- 238000000429 assembly Methods 0.000 claims description 26
- 239000002800 charge carrier Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 230000006798 recombination Effects 0.000 claims description 19
- 238000005215 recombination Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 9
- 238000004020 luminiscence type Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 3
- 239000010410 layer Substances 0.000 description 149
- 229910002601 GaN Inorganic materials 0.000 description 12
- 229910052984 zinc sulfide Inorganic materials 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052729 chemical element Inorganic materials 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012702 metal oxide precursor Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Description
2 基板
3 マスク層
4 開口部
5 構造
6 半導体層構造
7 活性ゾーン
8 外側層
9 外側領域
10 第1のセクション
11 第2のセクション
12 平面
13 コンタクト層
14 ミラー層
15 さらなるコンタクト
16 絶縁層
17 列
18 好ましい方向
19 領域
20 第1の領域
21 第2の領域
22 第3の領域
23 第3のセクション
24 さらなるコンタクト層
25 自由端部
26 上部点
Claims (19)
- 一方の端部によって基板(2)の上に配置されている円柱状構造(5)を備えたアセンブリ(1)であって、前記構造(5)が、電磁放射を生成する活性ゾーン(7)を有する半導体層構造(6)によって、少なくとも部分的に覆われており、前記活性ゾーン(7)が発光再結合のためのバンドギャップを有し、前記活性ゾーン(7)が、前記構造(5)の自由端部(25)の方向に前記構造(5)の縦軸線に沿って前記バンドギャップが減少していくように具体化されており、したがって、前記構造(5)の前記自由端部(25)の方向における電荷キャリアの拡散と、前記構造(5)の前記自由端部(25)の領域における電荷キャリア対の発光再結合とが、支援され、
前記構造(5)の自由端部領域において、前記活性ゾーン(7)の上に絶縁層(16)が設けられており、電気的にバイアスをかけるための電気コンタクト(15)が、前記絶縁層(16)の上に設けられている、アセンブリ(1)。 - 前記活性ゾーン(7)が、前記円柱状構造(5)の外側領域の少なくとも85%を覆っている、
請求項1に記載のアセンブリ。 - 前記活性ゾーン(7)の少なくとも1層の量子井戸層の厚さが、前記構造(5)の前記自由端部(25)の方向に、少なくとも1つのセクションにおいて、増大していく、
請求項1または請求項2のいずれかに記載のアセンブリ。 - 前記バンドギャップが前記構造(5)の前記自由端部(25)の方向に減少していくように、量子井戸層の材料組成が、少なくとも1つのセクションにおいて、前記構造(5)の前記自由端部(25)の方向に変化する、
請求項1から請求項3のいずれかに記載のアセンブリ。 - 前記バンドギャップが、少なくとも1つのセクション(10,11)において、前記自由端部(25)の方向に連続的に減少していくように、前記活性ゾーン(7)が具体化されている、
請求項1から請求項4のいずれかに記載のアセンブリ。 - 前記活性ゾーン(7)が、前記構造(5)の縦方向に、少なくとも2つの平面(10,11,23)に配置されており、前記2つの平面が、互いに対して傾斜した状態に配置されており、少なくとも1つのセクションにおいて、前記自由端部(25)の方向に、少なくとも1つの平面(10,11,23)内で、前記バンドギャップが減少していくように、前記活性ゾーン(7)が具体化されている、
請求項1から請求項5のいずれかに記載のアセンブリ。 - 前記バンドギャップが、少なくとも1つの平面(10,11,23)内で、前記自由端部(25)の方向に、連続的に、不連続的に、多段階的に、またはこれらの任意の組合せにおいて、減少していく、
請求項1から請求項6のいずれかに記載のアセンブリ。 - 前記活性ゾーン(7)が、Inを含む、特に、InGaN層を備えており、インジウムの濃度が、前記構造(5)の前記自由端部(25)の方向に増大していく、特に、前記自由端部(25)の方向に、少なくとも1つの平面のセクション(10,11)において、連続的に、もしくは段階的に、またはその両方において、増大していく、
請求項1から請求項7のいずれかに記載のアセンブリ。 - 前記円柱状構造(5)が結晶構造を有し、前記構造(5)の外側領域(9)において、前記構造(5)の前記自由端部(25)方向に第1の結晶面(10)から第2の結晶面(11)に遷移しており、前記活性ゾーン(7)が、前記活性ゾーン(7)の前記バンドギャップが前記第1の結晶面(10)から前記第2の結晶面(11)において減少していくように、2つの平面において前記2つの結晶面の上に具体化されている、
請求項1から請求項8のいずれかに記載のアセンブリ。 - 前記バンドギャップが前記構造(5)の前記自由端部(25)の方向に減少していくように、前記活性ゾーン(7)の材料組成が、少なくとも1つのセクションにおいて、前記構造(5)の前記自由端部(25)の方向に変化する、
請求項1から請求項9のいずれかに記載のアセンブリ。 - 前記円柱状構造(5)が縦方向に沿って3つのセクション(10,11,23)に分割されており、第1のセクション(10)においては、前記構造の直径が前記構造(5)の前記自由端部(25)の方向に実質的に一定であり、続く第2のセクション(11)においては、前記構造(5)の直径が減少していき、前記第2のセクション(11)に前記構造(5)の第3のセクション(23)が隣接しており、特に、前記活性ゾーン(7)の端部領域が、前記第3のセクション(23)において前記構造(5)の前記自由端部(25)における平面(12)の上に配置されており、前記平面(12)が、前記構造(5)の前記縦軸線を実質的に横切る方向に、特に、前記縦軸線に垂直に、配置されており、特に、点状に具体化されている、
請求項1から請求項10のいずれかに記載のアセンブリ。 - 請求項1から請求項11のいずれかに記載のアセンブリを製造する方法であって、基板上に、導電性材料からなる、特に、半導体材料からなる円柱状構造、を作製し、電荷キャリアの発光再結合のための活性ゾーンのバンドギャップが、前記構造の縦軸線に沿って前記構造の自由端部の方向に減少していくように、前記構造の少なくとも一部の上に、電磁放射を生成する前記活性ゾーンを有する半導体層構造を形成し、したがって、前記構造の前記自由端部の方向における電荷キャリアの拡散と、前記構造の前記自由端部の領域における電荷キャリア対の発光再結合とが、支援される、方法。
- 発光再結合のための少なくとも1層の量子井戸層の厚さが前記構造の前記自由端部の方向に増大していくように、前記活性ゾーンを堆積させる、
請求項12に記載の方法。 - 結果として生じるバンドギャップが減少していくように、前記活性ゾーンの材料組成が前記構造の縦延在方向に沿って前記構造の前記自由端部の方向に変化するように、前記活性ゾーンを堆積させる、
請求項12または請求項13のいずれかに記載の方法。 - 基板(2)と、複数のアセンブリ(1)とを備えたアレイであって、請求項1から請求項11のいずれかに記載の各アセンブリが、一方の端部によって前記基板(2)の上に配置されている円柱状構造(5)を備え、前記構造(5)が、電磁放射を生成する活性ゾーン(7)を有する半導体層構造(6)によって、少なくとも部分的に覆われており、前記活性ゾーン(7)が発光再結合のためのバンドギャップを有し、前記活性ゾーン(7)が、前記構造(5)の自由端部(25)の方向に前記構造(5)の縦軸線に沿って前記バンドギャップが減少していくように具体化されており、したがって、前記構造(5)の前記自由端部(25)の方向における電荷キャリアの拡散と、前記構造(5)の前記自由端部(25)の領域における電荷キャリア対の発光再結合とが、支援され、少なくとも1つの方向において少なくとも1つの第2の方向よりも高い密度のアセンブリ(1)が設けられている、アレイ。
- アセンブリ(1)の少なくとも2つの列が設けられており、前記列が互いに平行に整列している、
請求項15に記載のアレイ。 - 少なくとも2つの、列の領域(19)が設けられており、各領域(19)において、アセンブリの少なくとも2つの列が平行に配置されており、前記2つの領域(19)が互いに平行に配置されており、前記2つの領域(19)が、前記アセンブリ(1)の整列方向に対して垂直な方向に互いに距離をおいて配置されており、前記距離が、領域内の2つのアセンブリ(1)の間の平均距離よりも大きい、
請求項15または請求項16のいずれかに記載のアレイ。 - 前記異なる領域(19)の前記アセンブリ(1)の前記活性ゾーン(7)が、平均して、異なるバンドギャップを有する、もしくは、前記領域(19)の前記アセンブリ(1)が、互いに異なる距離に配置されている、またはその両方である、
請求項15から請求項17のいずれかに記載のアレイ。 - 前記アレイは、レーザのアレイである、
請求項15から請求項18のいずれかに記載のアレイ。
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PCT/EP2014/057933 WO2014173820A1 (de) | 2013-04-26 | 2014-04-17 | Lichtemitierende anordnung mit einer halbleiterschichtenfolge mit einer aktiven zone auf einer säulenartigen struktur |
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