DE112014002164A5 - Lichtemitierende Anordnung mit einer Halbleiterschichtenfolge mit einer aktiven Zone auf einer säulenartigen Struktur - Google Patents
Lichtemitierende Anordnung mit einer Halbleiterschichtenfolge mit einer aktiven Zone auf einer säulenartigen Struktur Download PDFInfo
- Publication number
- DE112014002164A5 DE112014002164A5 DE112014002164.4T DE112014002164T DE112014002164A5 DE 112014002164 A5 DE112014002164 A5 DE 112014002164A5 DE 112014002164 T DE112014002164 T DE 112014002164T DE 112014002164 A5 DE112014002164 A5 DE 112014002164A5
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- Germany
- Prior art keywords
- light
- semiconductor layer
- emitting device
- layer sequence
- columnar structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H01S5/405—Two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013104273.2A DE102013104273A1 (de) | 2013-04-26 | 2013-04-26 | Anordnung mit säulenartiger Struktur und einer aktiven Zone |
DE102013104273.2 | 2013-04-26 | ||
PCT/EP2014/057933 WO2014173820A1 (de) | 2013-04-26 | 2014-04-17 | Lichtemitierende anordnung mit einer halbleiterschichtenfolge mit einer aktiven zone auf einer säulenartigen struktur |
Publications (2)
Publication Number | Publication Date |
---|---|
DE112014002164A5 true DE112014002164A5 (de) | 2015-12-31 |
DE112014002164B4 DE112014002164B4 (de) | 2022-04-21 |
Family
ID=50639453
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102013104273.2A Withdrawn DE102013104273A1 (de) | 2013-04-26 | 2013-04-26 | Anordnung mit säulenartiger Struktur und einer aktiven Zone |
DE112014002164.4T Active DE112014002164B4 (de) | 2013-04-26 | 2014-04-17 | Anordnung, Verfahren zum Herstellen einer Anordnung und Array |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102013104273.2A Withdrawn DE102013104273A1 (de) | 2013-04-26 | 2013-04-26 | Anordnung mit säulenartiger Struktur und einer aktiven Zone |
Country Status (5)
Country | Link |
---|---|
US (1) | US9531161B2 (de) |
JP (1) | JP6184586B2 (de) |
CN (1) | CN105144413B (de) |
DE (2) | DE102013104273A1 (de) |
WO (1) | WO2014173820A1 (de) |
Families Citing this family (41)
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US9054233B2 (en) * | 2013-06-07 | 2015-06-09 | Glo Ab | Multicolor LED and method of fabricating thereof |
FR3030995A1 (fr) | 2014-12-23 | 2016-06-24 | Aledia | Source de lumiere electroluminescente a parametre de luminance ajuste ou ajustable en luminance et procede d'ajustement d'un parametre de luminance de la source de lumiere electroluminescente |
FR3039929B1 (fr) * | 2015-08-07 | 2018-08-10 | Valeo Vision | Dispositif d’eclairage et/ou de signalisation pour vehicule automobile |
FR3041576B1 (fr) * | 2015-09-25 | 2019-11-29 | Valeo Vision | Dispositif et procede permettant de conferer differentes couleurs blanches a un faisceau lumineux |
FR3041575B1 (fr) * | 2015-09-25 | 2019-05-24 | Valeo Vision | Dispositif lumineux comprenant une source lumineuse a batonnets avec des zones de couleurs differentes |
DE102015120778B4 (de) | 2015-11-30 | 2021-09-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102016103552A1 (de) * | 2016-02-29 | 2017-08-31 | Osram Opto Semiconductors Gmbh | Modul für eine Leuchte |
FR3048552B1 (fr) * | 2016-03-02 | 2018-05-25 | Valeo Vision | Source de lumiere a semi-conducteurs et systeme d'aide a la conduite pour vehicule automobile comportant une telle source |
FR3048550B1 (fr) * | 2016-03-02 | 2018-05-18 | Valeo Vision | Source de lumiere a semi-conducteurs pour l'emission et la reception de faisceaux lumineux, module d'emission/reception, dispositif lumineux et procede de commande associes |
FR3048551B1 (fr) * | 2016-03-02 | 2018-05-18 | Valeo Vision | Source de lumiere a semi-conducteurs pour l'emission et la reception de faisceaux lumineux, et systeme lumineux comportant une telle source |
FR3048817B1 (fr) * | 2016-03-11 | 2018-06-15 | Valeo Comfort And Driving Assistance | Ecran et afficheur tete haute comprenant un tel ecran |
DE102016104616B4 (de) | 2016-03-14 | 2021-09-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlichtquelle |
FR3053761A1 (fr) * | 2016-07-05 | 2018-01-12 | Valeo Vision | Dispositif d’eclairage et/ou de signalisation pour vehicule automobile |
US10879422B2 (en) | 2016-09-29 | 2020-12-29 | Nichia Corporation | Light emitting element |
FR3061535B1 (fr) * | 2017-01-02 | 2019-08-09 | Valeo Vision | Source lumineuse led multicolore a batonnets |
FR3061536B1 (fr) * | 2017-01-02 | 2019-05-24 | Valeo Vision | Module d'emission lumineuse a batonnets electroluminescents et a nappe de guidage |
JP7333666B2 (ja) * | 2017-02-28 | 2023-08-25 | 学校法人上智学院 | 光デバイスおよび光デバイスの製造方法 |
JP7090861B2 (ja) * | 2017-02-28 | 2022-06-27 | 学校法人上智学院 | 光デバイスおよび光デバイスの製造方法 |
FR3064338B1 (fr) * | 2017-03-24 | 2019-04-05 | Valeo Vision | Source de lumiere monolithique pour un module lumineux de vehicule automobile |
DE102017113745A1 (de) * | 2017-06-21 | 2018-12-27 | Osram Opto Semiconductors Gmbh | Halbleiterdisplay, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung solcher |
DE102017120037A1 (de) * | 2017-08-31 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterchips, strahlungsemittierender Halbleiterchip und strahlungsemittierender Halbleiterchip-Array |
DE102017129319A1 (de) * | 2017-12-08 | 2019-06-13 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung von halbleiterlichtquellen und halbleiterlichtquelle |
FR3076399B1 (fr) * | 2017-12-28 | 2020-01-24 | Aledia | Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles |
WO2019163274A1 (ja) * | 2018-02-26 | 2019-08-29 | パナソニック株式会社 | 半導体発光素子 |
DE102018105786A1 (de) * | 2018-03-13 | 2019-09-19 | Osram Opto Semiconductors Gmbh | Multipixelchip und Verfahren zur Herstellung eines Multipixelchips |
JP7188690B2 (ja) * | 2018-08-22 | 2022-12-13 | セイコーエプソン株式会社 | プロジェクター |
US10811460B2 (en) | 2018-09-27 | 2020-10-20 | Lumileds Holding B.V. | Micrometer scale light emitting diode displays on patterned templates and substrates |
US10923628B2 (en) | 2018-09-27 | 2021-02-16 | Lumileds Llc | Micrometer scale light emitting diode displays on patterned templates and substrates |
US10964845B2 (en) | 2018-09-27 | 2021-03-30 | Lumileds Llc | Micro light emitting devices |
US11271033B2 (en) | 2018-09-27 | 2022-03-08 | Lumileds Llc | Micro light emitting devices |
JP7320770B2 (ja) * | 2018-09-28 | 2023-08-04 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
DE102018133123A1 (de) * | 2018-12-20 | 2020-06-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement mit einem zentralen Bereich und einem Randbereich und Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements |
US11610868B2 (en) | 2019-01-29 | 2023-03-21 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
US11156759B2 (en) | 2019-01-29 | 2021-10-26 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
US11302248B2 (en) | 2019-01-29 | 2022-04-12 | Osram Opto Semiconductors Gmbh | U-led, u-led device, display and method for the same |
US11271143B2 (en) | 2019-01-29 | 2022-03-08 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
JP7232461B2 (ja) * | 2019-02-28 | 2023-03-03 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
US11538852B2 (en) | 2019-04-23 | 2022-12-27 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
JP7320794B2 (ja) * | 2021-03-15 | 2023-08-04 | セイコーエプソン株式会社 | 発光装置、プロジェクター、およびディスプレイ |
WO2023282177A1 (ja) * | 2021-07-08 | 2023-01-12 | 株式会社小糸製作所 | 半導体発光素子および半導体発光素子の製造方法 |
KR20230114631A (ko) * | 2022-01-25 | 2023-08-01 | 삼성전자주식회사 | 나노 로드 발광 다이오드, 디스플레이 장치 및 제조 방법 |
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JP3460840B2 (ja) * | 1995-06-02 | 2003-10-27 | 松下電器産業株式会社 | 光素子、レーザ光源及びレーザ装置並びに光素子の製造方法 |
WO2003041234A1 (fr) * | 2001-11-05 | 2003-05-15 | Nichia Corporation | Element semi-conducteur |
US8330173B2 (en) * | 2005-06-25 | 2012-12-11 | Seoul Opto Device Co., Ltd. | Nanostructure having a nitride-based quantum well and light emitting diode employing the same |
US20070045638A1 (en) | 2005-08-24 | 2007-03-01 | Lumileds Lighting U.S., Llc | III-nitride light emitting device with double heterostructure light emitting region |
US7982205B2 (en) | 2006-01-12 | 2011-07-19 | National Institute Of Advanced Industrial Science And Technology | III-V group compound semiconductor light-emitting diode |
AU2007313096B2 (en) * | 2006-03-10 | 2011-11-10 | Unm Rainforest Innovations | Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices |
JP5309386B2 (ja) | 2007-08-20 | 2013-10-09 | 国立大学法人北海道大学 | 半導体発光素子アレー、その製造方法、及び光送信機器 |
JP2009147140A (ja) * | 2007-12-14 | 2009-07-02 | Panasonic Corp | 発光素子および発光素子の製造方法 |
US8669574B2 (en) * | 2008-07-07 | 2014-03-11 | Glo Ab | Nanostructured LED |
WO2010022064A1 (en) * | 2008-08-21 | 2010-02-25 | Nanocrystal Corporation | Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques |
KR101567121B1 (ko) * | 2008-09-01 | 2015-11-06 | 가꼬호징 조찌가꾸잉 | 반도체 광소자 어레이 및 그의 제조방법 |
EP2509119B1 (de) * | 2009-12-01 | 2017-03-08 | National University Corporation Hokkaido University | Lichtemittierendes element und verfahren zu seiner herstellung |
DE102009054564A1 (de) | 2009-12-11 | 2011-06-16 | Osram Opto Semiconductors Gmbh | Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung |
DE102010012711A1 (de) | 2010-03-25 | 2011-09-29 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements |
KR101691906B1 (ko) * | 2010-09-14 | 2017-01-02 | 삼성전자주식회사 | Ⅲ족 질화물 나노로드 발광 소자 제조방법 |
US8779412B2 (en) * | 2011-07-20 | 2014-07-15 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
-
2013
- 2013-04-26 DE DE102013104273.2A patent/DE102013104273A1/de not_active Withdrawn
-
2014
- 2014-04-17 US US14/785,090 patent/US9531161B2/en active Active
- 2014-04-17 WO PCT/EP2014/057933 patent/WO2014173820A1/de active Application Filing
- 2014-04-17 JP JP2016509405A patent/JP6184586B2/ja active Active
- 2014-04-17 CN CN201480023732.0A patent/CN105144413B/zh active Active
- 2014-04-17 DE DE112014002164.4T patent/DE112014002164B4/de active Active
Also Published As
Publication number | Publication date |
---|---|
US20160087150A1 (en) | 2016-03-24 |
JP6184586B2 (ja) | 2017-08-23 |
WO2014173820A1 (de) | 2014-10-30 |
CN105144413B (zh) | 2018-03-13 |
DE102013104273A1 (de) | 2014-10-30 |
US9531161B2 (en) | 2016-12-27 |
JP2016521459A (ja) | 2016-07-21 |
DE112014002164B4 (de) | 2022-04-21 |
CN105144413A (zh) | 2015-12-09 |
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