DE102014116082A8 - Halbleitervorrichtung mit einer spannungskompensierten Chipelektrode - Google Patents
Halbleitervorrichtung mit einer spannungskompensierten Chipelektrode Download PDFInfo
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- DE102014116082A8 DE102014116082A8 DE102014116082.7A DE102014116082A DE102014116082A8 DE 102014116082 A8 DE102014116082 A8 DE 102014116082A8 DE 102014116082 A DE102014116082 A DE 102014116082A DE 102014116082 A8 DE102014116082 A8 DE 102014116082A8
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- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
Priority Applications (3)
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DE102014116082.7A DE102014116082A1 (de) | 2014-11-04 | 2014-11-04 | Halbleitervorrichtung mit einer spannungskompensierten Chipelelektrode |
CN201510739122.7A CN105575926A (zh) | 2014-11-04 | 2015-11-04 | 具有应力补偿的芯片电极的半导体器件 |
US14/932,548 US20160126197A1 (en) | 2014-11-04 | 2015-11-04 | Semiconductor device having a stress-compensated chip electrode |
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DE102014116082.7A DE102014116082A1 (de) | 2014-11-04 | 2014-11-04 | Halbleitervorrichtung mit einer spannungskompensierten Chipelelektrode |
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EP3264455B1 (de) * | 2016-06-30 | 2021-05-26 | Nxp B.V. | Flipchip-schaltung |
CN106531821A (zh) * | 2016-11-17 | 2017-03-22 | 苏州元昱新能源有限公司 | 一种二极管、配置二极管的光伏电池串及光伏组件 |
DE102016122162B4 (de) | 2016-11-17 | 2022-05-05 | Infineon Technologies Ag | Halbleitervorrichtung mit metallisierungsstrukturen auf gegenüberliegenden seiten eines halbleiterbereichs, halbleiterschaltanordnung und verfahren |
CN106908970B (zh) * | 2017-03-06 | 2019-09-13 | 中国电子科技集团公司第二十六研究所 | 声光晶体与换能器键合结构 |
JP6895834B2 (ja) * | 2017-07-21 | 2021-06-30 | 三菱電機株式会社 | パワーデバイス |
CN109979825A (zh) * | 2017-12-15 | 2019-07-05 | 胡志良 | 阵列批次式封装元件晶粒的电路元件制作方法 |
US11605608B2 (en) | 2019-11-11 | 2023-03-14 | Infineon Technologies Austria Ag | Preform diffusion soldering |
US11158602B2 (en) * | 2019-11-11 | 2021-10-26 | Infineon Technologies Austria Ag | Batch diffusion soldering and electronic devices produced by batch diffusion soldering |
US20230040727A1 (en) * | 2020-05-13 | 2023-02-09 | Mitsubishi Electric Corporation | Semiconductor device |
US11798924B2 (en) * | 2020-06-16 | 2023-10-24 | Infineon Technologies Ag | Batch soldering of different elements in power module |
US11610861B2 (en) * | 2020-09-14 | 2023-03-21 | Infineon Technologies Austria Ag | Diffusion soldering with contaminant protection |
CN112968007B (zh) * | 2021-02-03 | 2023-03-24 | 重庆大学 | 功率半导体结构及断路器转移支路组件 |
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DE3823347A1 (de) * | 1988-07-09 | 1990-01-11 | Semikron Elektronik Gmbh | Leistungs-halbleiterelement |
US20030111739A1 (en) * | 2000-09-28 | 2003-06-19 | Kabushiki Kaisha Toshiba | Semiconductor device and package thereof |
DE10314876A1 (de) * | 2003-04-01 | 2004-11-04 | Infineon Technologies Ag | Verfahren zum mehrstufigen Herstellen von Diffusionslötverbindungen für Leistungsbauteile mit Halbleiterchips |
DE102004030056A1 (de) * | 2003-06-23 | 2005-01-20 | Denso Corp., Kariya | Ausgeformte Halbleitervorrichtung und Verfahren zur Herstellung derselben |
DE102004012818B3 (de) * | 2004-03-16 | 2005-10-27 | Infineon Technologies Ag | Verfahren zum Herstellen eines Leistungshalbleiterbauelements |
DE102012106662A1 (de) * | 2011-07-27 | 2013-01-31 | Infineon Technologies Ag | Mehrschichtenmetallisierung mit beanspruchungsreduzierender Zwischenschicht |
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TW529112B (en) * | 2002-01-07 | 2003-04-21 | Advanced Semiconductor Eng | Flip-chip packaging having heat sink member and the manufacturing process thereof |
JP4262672B2 (ja) * | 2004-12-24 | 2009-05-13 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
US7880278B2 (en) * | 2006-05-16 | 2011-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit having stress tuning layer |
DE102009001028B4 (de) * | 2009-02-20 | 2011-02-17 | Infineon Technologies Ag | Verfahren zur Herstellung einer Bondverbindung |
KR101715761B1 (ko) * | 2010-12-31 | 2017-03-14 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
US9029202B2 (en) * | 2013-05-28 | 2015-05-12 | Freescale Semiconductor, Inc. | Method of forming a high thermal conducting semiconductor device package |
US20150008566A1 (en) * | 2013-07-02 | 2015-01-08 | Texas Instruments Incorporated | Method and structure of panelized packaging of semiconductor devices |
US9006030B1 (en) * | 2013-12-09 | 2015-04-14 | Xilinx, Inc. | Warpage management for fan-out mold packaged integrated circuit |
-
2014
- 2014-11-04 DE DE102014116082.7A patent/DE102014116082A1/de not_active Ceased
-
2015
- 2015-11-04 CN CN201510739122.7A patent/CN105575926A/zh active Pending
- 2015-11-04 US US14/932,548 patent/US20160126197A1/en not_active Abandoned
Patent Citations (6)
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DE3823347A1 (de) * | 1988-07-09 | 1990-01-11 | Semikron Elektronik Gmbh | Leistungs-halbleiterelement |
US20030111739A1 (en) * | 2000-09-28 | 2003-06-19 | Kabushiki Kaisha Toshiba | Semiconductor device and package thereof |
DE10314876A1 (de) * | 2003-04-01 | 2004-11-04 | Infineon Technologies Ag | Verfahren zum mehrstufigen Herstellen von Diffusionslötverbindungen für Leistungsbauteile mit Halbleiterchips |
DE102004030056A1 (de) * | 2003-06-23 | 2005-01-20 | Denso Corp., Kariya | Ausgeformte Halbleitervorrichtung und Verfahren zur Herstellung derselben |
DE102004012818B3 (de) * | 2004-03-16 | 2005-10-27 | Infineon Technologies Ag | Verfahren zum Herstellen eines Leistungshalbleiterbauelements |
DE102012106662A1 (de) * | 2011-07-27 | 2013-01-31 | Infineon Technologies Ag | Mehrschichtenmetallisierung mit beanspruchungsreduzierender Zwischenschicht |
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