JP4927042B2 - 光子結晶発光素子及びその製造方法 - Google Patents
光子結晶発光素子及びその製造方法 Download PDFInfo
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- JP4927042B2 JP4927042B2 JP2008196915A JP2008196915A JP4927042B2 JP 4927042 B2 JP4927042 B2 JP 4927042B2 JP 2008196915 A JP2008196915 A JP 2008196915A JP 2008196915 A JP2008196915 A JP 2008196915A JP 4927042 B2 JP4927042 B2 JP 4927042B2
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- 239000004038 photonic crystal Substances 0.000 title claims description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title description 30
- 239000004065 semiconductor Substances 0.000 claims description 77
- 229920002120 photoresistant polymer Polymers 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 23
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 9
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 description 17
- 239000013078 crystal Substances 0.000 description 12
- 238000000605 extraction Methods 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008570 general process Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
特に、p型半導体層上に凹凸パターンを形成するために、誘導結合プラズマ反応性イオンエッチング(ICP−RIE)などのドライエッチングを行う場合、電気的作動のための半導体結晶構造(特に、活性層辺りの結晶構造)に深刻な損傷が引き起こされる。さらに、この場合、p型ドーピングされた部分にn型ドナーが生じ、p型半導体層のドーピング濃度を減少させるが、このような現象は極所的にのみ生じることではなく、縦的及び横的に伝播される。これにより、半導体発光素子は電気駆動素子としての機能自体が失われることもある。
12 n型半導体層
13 活性層
14 p型半導体層
15、35、55 透明電極層
16a n側電極
16b p側電極
Claims (11)
- 第1導電型の第1半導体層及び第2導電型の第2半導体層とこれらの間に形成された活性層とを備える発光構造物と、
前記第2半導体層上に形成され、前記活性層から放出された光に対して光子結晶構造をなすことができる大きさと周期を有するように配列された複数のホールを備える透明電極層と、
前記第1半導体層及び前記透明電極層に夫々電気的に連結された第1電極及び第2電極と、
を含み、
前記ホールは、前記透明電極層をなす物質の光屈折率と異なる光屈折率を有するSiO 2 で埋められていることを特徴とする光子結晶発光素子。 - 前記透明電極層は、金属酸化物からなることを特徴とする請求項1に記載の光子結晶発光素子。
- 前記透明電極層はITO、In2O3、SnO2、MgO、Ga2O3、ZnO及びAl2O3から構成されたグループから選ばれた物質からなることを特徴とする請求項2に記載の光子結晶発光素子。
- 前記ホールの形状は、円形、四角形及び六角形のうちいずれかであることを特徴とする請求項1に記載の光子結晶発光素子。
- 前記透明電極層の光子結晶構造は、前記第2電極が形成された領域を除いた領域に形成されたことを特徴とする請求項1に記載の光子結晶発光素子。
- 前記第1半導体層及び第2半導体層は、夫々n型半導体層及びp型半導体層であることを特徴とする請求項1に記載の光子結晶発光素子。
- 前記第1半導体層、前記活性層及び前記第2半導体層は窒化物からなることを特徴とする請求項1に記載の光子結晶発光素子。
- 基板上に順に第1導電型の第1半導体層、活性層及び第2導電型の第2半導体層を形成する段階と、
前記第2半導体層上にフォトレジストパターンを形成する段階と、
前記第2半導体層上の前記フォトレジストパターンが形成されていない領域に透明電極層を形成する段階と、
前記フォトレジストパターンを除去する段階と、
前記フォトレジストパターンが除去された領域に、前記透明電極層をなす物質の光屈折率と異なる光屈折率を有するSiO 2 を埋める段階と、
前記第1半導体層及び前記透明電極層に夫々電気的に連結されるよう第1電極及び第2電極を形成する段階と、を含み、
前記フォトレジストパターンが除去された領域は、前記活性層から放出された光に対して光子結晶構造をなすことができる大きさと周期を有するように配列されることを特徴とする光子結晶発光素子の製造方法。 - 基板上に順に第1導電型の第1半導体層、活性層及び第2導電型の第2半導体層を形成する段階と、
前記第2半導体層上に光子結晶構造層を形成する段階と、
前記光子結晶構造層上にフォトレジストパターンを形成する段階と、
前記光子結晶構造層のうち前記フォトレジストパターンが形成されていない領域を除去する段階と、
前記光子結晶構造層が除去された領域に透明電極層を形成する段階と、
前記フォトレジストパターンを除去する段階と、
前記第1半導体層及び前記透明電極層に夫々電気的に連結されるよう第1電極及び第2電極を形成する段階と、を含み、
前記光子結晶構造層は、前記透明電極層をなす物質の光屈折率と異なる光屈折率を有するSiO 2 からなり、前記活性層から放出された光に対して光子結晶構造をなすことができる大きさと周期を有するように配列されることを特徴とする光子結晶発光素子の製造方法。 - 前記透明電極層は、金属酸化物からなることを特徴とする請求項8または9に記載の光子結晶発光素子の製造方法。
- 前記透明電極層は、ITO、In2O3、SnO2、MgO、Ga2O3、ZnO及びAl2O3から構成されたグループから選ばれた物質からなることを特徴とする請求項10に記載の光子結晶発光素子の製造方法。
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KR10-2007-0076376 | 2007-07-30 | ||
KR1020070076376A KR101341374B1 (ko) | 2007-07-30 | 2007-07-30 | 광자결정 발광소자 및 그 제조방법 |
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JP2009033180A JP2009033180A (ja) | 2009-02-12 |
JP4927042B2 true JP4927042B2 (ja) | 2012-05-09 |
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US (1) | US8405103B2 (ja) |
JP (1) | JP4927042B2 (ja) |
KR (1) | KR101341374B1 (ja) |
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US20090184334A1 (en) | 2009-07-23 |
KR20090012494A (ko) | 2009-02-04 |
US8405103B2 (en) | 2013-03-26 |
JP2009033180A (ja) | 2009-02-12 |
KR101341374B1 (ko) | 2013-12-16 |
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